1N4732A [NXP]

Voltage regulator diodes; 稳压二极管
1N4732A
型号: 1N4732A
厂家: NXP    NXP
描述:

Voltage regulator diodes
稳压二极管

稳压二极管 测试
文件: 总6页 (文件大小:31K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
1N4728A to 1N4749A  
Voltage regulator diodes  
1996 Apr 26  
Product specification  
Supersedes data of April 1992  
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
1N4728A to 1N4749A  
FEATURES  
DESCRIPTION  
Total power dissipation:  
max. 1000 mW  
Low voltage regulator diodes in hermetically sealed SOD66 (DO-41) packages.  
The series consists of 22 types with nominal working voltages from 3.3 to 24 V.  
Tolerance series: ±5%  
Working voltage range:  
nom. 3.3 to 24 V.  
handbook, halfpage  
k
a
MAM241  
APPLICATIONS  
Low voltage stabilizers.  
The diodes are type branded.  
Fig.1 Simplified outline (SOD66; DO-41) and symbol.  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
IF  
continuous forward current  
working current  
500 mA  
IZM  
see Table  
“Per type”  
IZSM  
non-repetitive peak reverse current  
see Table  
“Per type”  
Ptot  
Tstg  
Tj  
total power dissipation  
storage temperature  
junction temperature  
Tamb = 50 °C  
1000 mW  
65  
65  
+200 °C  
+200 °C  
ELECTRICAL CHARACTERISTICS  
Total series  
Tj = 25 °C; unless otherwise specified.  
SYMBOL  
PARAMETER  
forward voltage  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VF  
IF = 200 mA; see Fig.3  
1.2  
V
1996 Apr 26  
2
Per type  
Tj = 25 °C; unless otherwise specified.  
WORKING  
VOLTAGE  
VZ (V)(1)  
TEST CURRENT  
DIFFERENTIAL  
RESISTANCE  
REVERSE CURRENT  
at REVERSE VOLTAGE CURRENT  
IZM (mA)  
WORKING  
NON-REPETITIVE  
PEAK REVERSE  
CURRENT  
IZtest (mA)  
rdif ()  
rdif ()  
TYPE No.  
at IZtest  
IZSM (mA)(2)  
IR (µA)  
IZ  
(mA)  
at IZtest  
at IZ  
VR (V)  
NOM.  
MAX.  
MAX.  
MAX.  
100  
MAX.  
MAX.  
1N4728A  
1N4729A  
1N4730A  
1N4731A  
1N4732A  
1N4733A  
1N4734A  
1N4735A  
1N4736A  
1N4737A  
1N4738A  
1N4739A  
1N4740A  
1N4741A  
1N4742A  
1N4743A  
1N4744A  
1N4745A  
1N4746A  
1N4747A  
1N4748A  
1N4749A  
3.3  
3.6  
3.9  
4.3  
4.7  
5.1  
5.6  
6.2  
6.8  
7.5  
8.2  
9.1  
10  
76  
10  
10  
9
400  
400  
400  
400  
500  
550  
600  
700  
700  
700  
700  
700  
700  
700  
700  
700  
700  
700  
750  
750  
750  
750  
1
1
1
276  
252  
234  
217  
193  
178  
162  
146  
133  
121  
110  
100  
91  
1380  
1260  
1190  
1070  
970  
890  
810  
730  
660  
605  
550  
500  
454  
414  
380  
344  
304  
285  
250  
225  
205  
190  
69  
1
100  
50  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
5
64  
1
1
58  
9
1
1
53  
8
1
1
49  
7
1
1
45  
5
1
2
41  
2
1
3
37  
3.5  
4
1
4
34  
0.5  
0.5  
0.5  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
5
31  
4.5  
5
6
28  
7
25  
7
7.6  
8.4  
9.1  
9.9  
11.4  
12.2  
13.7  
15.2  
16.7  
18.2  
11  
23  
8
83  
12  
21  
9
5
76  
13  
19  
10  
14  
16  
20  
22  
23  
25  
5
69  
15  
17  
5
61  
16  
15.5  
14  
5
57  
18  
5
50  
20  
12.5  
11.5  
10.5  
5
45  
22  
5
41  
24  
5
38  
Notes  
1. VZ is measured with device at thermal equilibrium while held in clips at 10 mm from body in still air at 25 °C.  
2. Half square wave or equivalent sinewave pulse 1120 second duration superimposed on IZtest  
.
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
1N4728A to 1N4749A  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
Rth j-tp  
thermal resistance from junction to tie-point lead length 4 mm; see Fig.2  
110  
K/W  
1996 Apr 26  
4
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
1N4728A to 1N4749A  
GRAPHICAL DATA  
MBG928  
3
10  
R
th j-tp  
(K/W)  
δ = 1  
2
10  
0.75  
0.50  
0.33  
0.20  
0.10  
0.05  
10  
0.02  
0.01  
0
t
t
p
p
δ =  
T
T
1
10  
1  
2
3
4
5
1
10  
10  
10  
10  
10  
t
(ms)  
p
Fig.2 Thermal resistance from junction to tie-point; lead length 4 mm.  
MBG925  
300  
handbook, halfpage  
I
F
(mA)  
200  
(1)  
(2)  
100  
0
0
0.5  
1.0  
V
(V)  
F
(1) Tj = 200 °C; typical values.  
(2) Tj = 25 °C; typical values.  
Fig.3 Forward current as a function of  
forward voltage.  
1996 Apr 26  
5
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
1N4728A to 1N4749A  
PACKAGE OUTLINE  
k
a
0.81  
max  
4.8  
max  
2.6  
max  
MBC894  
28 min  
28 min  
Dimensions in mm.  
Fig.4 SOD66 (DO-41).  
DEFINITIONS  
Data sheet status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1996 Apr 26  
6

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