M25PE16-VMP6TG [NUMONYX]
16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout; 16兆位，页擦除串行闪存与字节变性， 75兆赫的SPI总线，标准引脚
| 型号： | M25PE16-VMP6TG |
| 厂家： | 
NUMONYX B.V |
| 描述： | 16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout |
| 文件： | 总58页 (文件大小：1214K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M25PE16
16-Mbit, page-erasable serial flash memory with
byte-alterability, 75 MHz SPI bus, standard pinout
Features
■ SPI bus compatible serial interface
■ 16-Mbit page-erasable Flash memory
■ Page size: 256 bytes
– Page write in 11 ms (typical)
– Page program in 0.8 ms (typical)
– Page erase in 10 ms (typical)
VFQFPN8 (MP)
6 x 5 mm (MLP8)
■ Subsector erase (4 Kbytes)
■ Sector erase (64 Kbytes)
■ Bulk erase (16 Mbits)
■ 2.7 V to 3.6 V single supply voltage
■ 75 MHz clock rate (maximum)
■ Deep power-down mode 1 µA (typical)
■ Electronic signature
SO8W (MW)
208 mils width
– JEDEC standard two-byte signature
(8015h)
– Unique ID code (UID) with 16 bytes read-
only, available upon customer request
■ Software write protection on a 64-Kbyte sector
basis
■ Hardware write protection of the memory area
selected using the BP0, BP1 and BP2 bits
■ More than 100 000 write cycles
■ More than 20 years data retention
■ Packages
– ECOPACK® (RoHS compliant)
April 2008
Rev 6
1/58
www.numonyx.com
1
Contents
M25PE16
Contents
1
2
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Signal descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
Serial data output (Q) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Serial data input (D) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Serial clock (C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Chip select (S) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Reset (Reset) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Write protect (W) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
VCC supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
VSS ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3
4
SPI modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Operating features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
Sharing the overhead of modifying data . . . . . . . . . . . . . . . . . . . . . . . . . . 12
An easy way to modify data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
A fast way to modify data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Polling during a write, program or erase cycle . . . . . . . . . . . . . . . . . . . . . 13
Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Active power, standby power and deep power-down modes . . . . . . . . . . 13
Status register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Protection modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4.8.1
4.8.2
Protocol-related protections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Specific hardware and software protections . . . . . . . . . . . . . . . . . . . . . 15
5
6
Memory organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Instructions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
6.1
6.2
6.3
Write enable (WREN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Write disable (WRDI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Read identification (RDID) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
2/58
M25PE16
Contents
6.4
Read status register (RDSR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
6.4.1
6.4.2
6.4.3
6.4.4
WIP bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
WEL bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
BP2, BP1, BP0 bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
SRWD bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
6.5
6.6
6.7
6.8
6.9
Write status register (WRSR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Read data bytes (READ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Read data bytes at higher speed (FAST_READ) . . . . . . . . . . . . . . . . . . . 30
Read lock register (RDLR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Page write (PW) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
6.10 Page program (PP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
6.11 Write to lock register (WRLR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
6.12 Page erase (PE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
6.13 Sector erase (SE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
6.14 Subsector erase (SSE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
6.15 Bulk erase (BE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
6.16 Deep power-down (DP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
6.17 Release from deep power-down (RDP) . . . . . . . . . . . . . . . . . . . . . . . . . . 42
7
Power-up and power-down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Initial delivery state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
8
9
10
11
12
13
14
3/58
List of tables
M25PE16
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Table 12.
Table 13.
Table 14.
Table 15.
Table 16.
Table 17.
Table 18.
Table 19.
Table 20.
Table 21.
Table 22.
Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Software protection truth table (sectors 0 to 31, 64-Kbyte granularity). . . . . . . . . . . . . . . . 15
Protected area sizes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Memory organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Instruction set . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Read identification (RDID) data-out sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Status register format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Protection modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Lock register out . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Lock register in . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Power-up timing and VWI threshold . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Device status after a Reset Low pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Operating conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
AC measurement conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
DC characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
AC characteristics (50 MHz operation) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
AC characteristics (75 MHz operation) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Reset conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Timings after a Reset Low pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
VFQFPN8 (MLP8) 8-lead very thin fine pitch quad flat package no lead,
6 × 5 mm, package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
SO8 wide – 8 lead plastic small outline, 208 mils body width, mechanical data. . . . . . . . . 55
Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Table 23.
Table 24.
Table 25.
4/58
M25PE16
List of figures
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
VFQFPN and SO connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Bus master and memory devices on the SPI bus. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
SPI modes supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Write enable (WREN) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Write disable (WRDI) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Read identification (RDID) instruction sequence and data-out sequence . . . . . . . . . . . . . 24
Read status register (RDSR) instruction sequence and data-out sequence . . . . . . . . . . . 26
Figure 10. Write status register (WRSR) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 11. Read data bytes (READ) instruction sequence and data-out sequence . . . . . . . . . . . . . . 29
Figure 12. Read data bytes at higher speed (FAST_READ) instruction sequence
and data-out sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Figure 13. Read lock register (RDLR) instruction sequence
and data-out sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Figure 14. Page write (PW) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Figure 15. Page program (PP) instruction sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Figure 16. Write to lock register (WRLR) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Figure 17. Page erase (PE) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Figure 18. Sector erase (SE) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Figure 19. Subsector erase (SSE) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Figure 20. Bulk erase (BE) instruction sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Figure 21. Deep power-down (DP) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Figure 22. Release from deep power-down (RDP) instruction sequence . . . . . . . . . . . . . . . . . . . . . . 42
Figure 23. Power-up timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Figure 24. AC measurement I/O waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Figure 25. Serial input timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Figure 26. Write protect setup and hold timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Figure 27. Output timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Figure 28. Reset AC waveforms while a program or erase cycle is in progress . . . . . . . . . . . . . . . . . 52
Figure 29. VFQFPN8 (MLP8) 8-lead very thin dual flat package no lead, 6 × 5 mm,
package outline. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Figure 30. SO8 wide – 8 lead plastic small outline, 208 mils body width, package outline . . . . . . . . . 55
5/58
Description
M25PE16
1
Description
The M25PE16 is a 16-Mbit (2 Mbits × 8) serial paged flash memory accessed by a high
speed SPI-compatible bus.
The memory can be written or programmed 1 to 256 bytes at a time, using the page write or
page program instruction. The page write instruction consists of an integrated page erase
cycle followed by a page program cycle.
The memory is organized as 32 sectors that are further divided up into 16 subsectors each
(512 subsectors in total). Each sector contains 256 pages and each subsector contains 16
pages. Each page is 256-byte wide. Thus, the whole memory can be viewed as consisting
of 8192 pages, or 2,097,152 bytes.
The memory can be erased a page at a time, using the page erase instruction, a subsector
at a time, using the subsector erase instruction, a sector at a time, using the sector erase
instruction, or as a whole, using the bulk erase instruction.
The memory can be write protected by either hardware or software using mixed volatile and
non-volatile protection features, depending on the application needs. The protection
granularity is of 64 Kbytes (sector granularity).
6/58
M25PE16
Description
Figure 1.
Logic diagram
V
CC
D
C
S
Q
M25PE16
W
Reset
V
SS
AI12343c
Table 1.
Signal names
Signal name
Function
Direction
C
Serial clock
Serial data input
Serial data output
Chip select
Write protect
Reset
Input
D
Input
Output
Input
Input
Input
–
Q
S
W
Reset
VCC
VSS
Supply voltage
Ground
–
Figure 2.
VFQFPN and SO connections
M25PE16
S
Q
1
2
3
4
8
7
6
5
V
CC
Reset
W
C
D
V
SS
AI12344c
1. There is an exposed die paddle on the underside of the MLP8 package. This is pulled, internally, to VSS
and must not be allowed to be connected to any other voltage or signal line on the PCB.
,
2. See Section 12: Package mechanical for package dimensions, and how to identify pin-1.
7/58
Signal descriptions
M25PE16
2
Signal descriptions
2.1
Serial data output (Q)
This output signal is used to transfer data serially out of the device. Data is shifted out on the
falling edge of Serial Clock (C).
2.2
2.3
2.4
Serial data input (D)
This input signal is used to transfer data serially into the device. It receives instructions,
addresses, and the data to be programmed. Values are latched on the rising edge of Serial
Clock (C).
Serial clock (C)
This input signal provides the timing of the serial interface. Instructions, addresses, or data
present at Serial Data Input (D) are latched on the rising edge of Serial Clock (C). Data on
Serial Data Output (Q) changes after the falling edge of Serial Clock (C).
Chip select (S)
When this input signal is High, the device is deselected and serial data output (Q) is at high
impedance. Unless an internal read, program, erase or write cycle is in progress, the device
will be in the standby mode (this is not the deep power-down mode). Driving Chip Select (S)
Low selects the device, placing it in the active power mode.
After power-up, a falling edge on Chip Select (S) is required prior to the start of any
instruction.
2.5
Reset (Reset)
The Reset (Reset) input provides a hardware reset for the memory.
When Reset (Reset) is driven High, the memory is in the normal operating mode. When
Reset (Reset) is driven Low, the memory will enter the reset mode. In this mode, the output
is high impedance.
Driving Reset (Reset) Low while an internal operation is in progress will affect this operation
(write, program or erase cycle) and data may be lost.
See Table 12 for the status of the device after a Reset Low pulse.
2.6
Write protect (W)
The write protect (W) input is used to freeze the size of the area of memory that is protected
against write, program and erase instructions (as specified by the values in the BP2, BP1
and BP0 bits of the status register). See Section 6.4: Read status register (RDSR).
8/58
M25PE16
Signal descriptions
2.7
VCC supply voltage
V
is the supply voltage.
CC
2.8
VSS ground
V
is the reference for the V supply voltage.
CC
SS
9/58
SPI modes
M25PE16
3
SPI modes
These devices can be driven by a microcontroller with its SPI peripheral running in either of
the two following modes:
■
■
CPOL=0, CPHA=0
CPOL=1, CPHA=1
For these two modes, input data is latched in on the rising edge of Serial Clock (C), and
output data is available from the falling edge of Serial Clock (C).
The difference between the two modes, as shown in Figure 4, is the clock polarity when the
bus master is in Stand-by mode and not transferring data:
■
■
C remains at 0 for (CPOL=0, CPHA=0)
C remains at 1 for (CPOL=1, CPHA=1)
Figure 3.
Bus master and memory devices on the SPI bus
V
V
SS
CC
R
SDO
SPI interface with
(CPOL, CPHA) =
(0, 0) or (1, 1)
SDI
SCK
V
V
V
CC
C
Q
D
C
Q
D
C Q D
CC
CC
V
V
R
V
SS
SS
SS
SPI bus master
SPI memory
device
SPI memory
device
SPI memory
device
R
R
CS3 CS2 CS1
S
S
S
W
Reset
W
Reset
Reset
W
AI12836c
1. The Write Protect (W) and Reset (Reset) signals should be driven, High or Low as appropriate.
Figure 3 shows an example of three devices connected to an MCU, on an SPI bus. Only one
device is selected at a time, so only one device drives the serial data output (Q) line at a
time, the other devices are high impedance. Resistors R (represented in Figure 3) ensure
that the M25PE16 is not selected if the bus master leaves the S line in the high impedance
state. As the bus master may enter a state where all inputs/outputs are in high impedance at
the same time (for example, when the bus master is reset), the clock line (C) must be
connected to an external pull-down resistor so that, when all inputs/outputs become high
impedance, the S line is pulled High while the C line is pulled Low (thus ensuring that S and
C do not become High at the same time, and so, that the t
requirement is met). The
SHCH
typical value of R is 100 kΩ, assuming that the time constant R*C (C = parasitic
p
p
capacitance of the bus line) is shorter than the time during which the bus master leaves the
SPI bus in high impedance.
10/58
M25PE16
SPI modes
Example: C = 50 pF, that is R*C = 5 µs <=> the application must ensure that the bus
p
p
master never leaves the SPI bus in the high impedance state for a time period shorter than
5 µs.
Figure 4.
SPI modes supported
CPOL CPHA
C
C
0
1
0
1
D
Q
MSB
MSB
AI01438B
11/58
Operating features
M25PE16
4
Operating features
4.1
Sharing the overhead of modifying data
To write or program one (or more) data bytes, two instructions are required: write enable
(WREN), which is one byte, and a page write (PW) or page program (PP) sequence, which
consists of four bytes plus data. This is followed by the internal cycle (of duration t
or t ).
PW
PP
To share this overhead, the page write (PW) or page program (PP) instruction allows up to
256 bytes to be programmed (changing bits from ‘1’ to ‘0’) or written (changing bits to ‘0’ or
‘1’) at a time, provided that they lie in consecutive addresses on the same page of memory.
4.2
An easy way to modify data
The page write (PW) instruction provides a convenient way of modifying data (up to 256
contiguous bytes at a time), and simply requires the start address, and the new data in the
instruction sequence.
The page write (PW) instruction is entered by driving Chip Select (S) Low, and then
transmitting the instruction byte, three address bytes (A23-A0) and at least one data byte,
and then driving Chip Select (S) High. While Chip Select (S) is being held Low, the data
bytes are written to the data buffer, starting at the address given in the third address byte
(A7-A0). When Chip Select (S) is driven High, the write cycle starts. The remaining,
unchanged, bytes of the data buffer are automatically loaded with the values of the
corresponding bytes of the addressed memory page. The addressed memory page then
automatically put into an erase cycle. Finally, the addressed memory page is programmed
with the contents of the data buffer.
All of this buffer management is handled internally, and is transparent to the user. The user
is given the facility of being able to alter the contents of the memory on a byte-by-byte basis.
For optimized timings, it is recommended to use the page write (PW) instruction to write all
consecutive targeted bytes in a single sequence versus using several page write (PW)
sequences with each containing only a few bytes (see Section 6.9: Page write (PW),
Table 18: AC characteristics (50 MHz operation), and Table 19: AC characteristics (75 MHz
operation)).
12/58
M25PE16
Operating features
4.3
A fast way to modify data
The page program (PP) instruction provides a fast way of modifying data (up to 256
contiguous bytes at a time), provided that it only involves resetting bits to ‘0’ that had
previously been set to ‘1’.
This might be:
■
■
when the designer is programming the device for the first time
when the designer knows that the page has already been erased by an earlier page
erase (PE), subsector erase (SSE), sector erase (SE) or bulk erase (BE) instruction.
This is useful, for example, when storing a fast stream of data, having first performed
the erase cycle when time was available
■
when the designer knows that the only changes involve resetting bits to 0 that are still
set to ‘1’. When this method is possible, it has the additional advantage of minimizing
the number of unnecessary erase operations, and the extra stress incurred by each
page.
For optimized timings, it is recommended to use the page program (PP) instruction to
program all consecutive targeted bytes in a single sequence versus using several page
program (PP) sequences with each containing only a few bytes (see Section 6.10: Page
program (PP), Table 18: AC characteristics (50 MHz operation), and Table 19: AC
characteristics (75 MHz operation)).
4.4
Polling during a write, program or erase cycle
A further improvement in the time to write (PW, WRSR), program (PP) or erase (SE, SSE or
BE) can be achieved by not waiting for the worst case delay (t , t , t , t , t , t
or
W
PW PP PE SE SSE
t
). The write in progress (WIP) bit is provided in the status register so that the application
BE
program can monitor its value, polling it to establish when the previous cycle is complete.
4.5
4.6
Reset
An internal power-on reset circuit helps protect against inadvertent data writes. Addition
protection is provided by driving Reset (Reset) Low during the power-on process, and only
driving it High when V has reached the correct voltage level, V (min).
CC
CC
Active power, standby power and deep power-down modes
When Chip Select (S) is Low, the device is selected, and in the active power mode.
When Chip Select (S) is High, the device is deselected, but could remain in the active power
mode until all internal cycles have completed (program, erase, write). The device then goes
in to the standby power mode. The device consumption drops to I
.
CC1
The deep power-down mode is entered when the specific instruction (the deep power-down
(DP) instruction) is executed. The device consumption drops further to I . When in this
CC2
mode, only the release from deep power-down instruction is accepted. All other instructions
are ignored. The device remains in the deep power-down mode until the release from deep
power-down instruction is executed. This can be used as an extra software protection
mechanism, when the device is not in active use, to protect the device from inadvertent
write, program or erase instructions.
13/58
Operating features
M25PE16
4.7
Status register
The status register contains a number of status and control bits that can be read or set (as
appropriate) by using specific instructions. See Section 6.4: Read status register (RDSR) for
a detailed description of the status register bits.
4.8
Protection modes
The environments where non-volatile memory devices are used can be very noisy. No SPI
device can operate correctly in the presence of excessive noise. To help combat this and to
meet the needs of modularized applications, the M25PE16 features the following flexible
data protection mechanisms:
4.8.1
Protocol-related protections
■
■
■
Power on reset and an internal timer (t
changes while the power supply is outside the operating specification.
) can provide protection against inadvertent
PUW
Program, erase and write instructions are checked that they consist of a number of
clock pulses that is a multiple of eight, before they are accepted for execution.
All instructions that modify data must be preceded by a write enable (WREN)
instruction to set the write enable latch (WEL) bit. This bit is returned to its reset state
by the following events:
–
–
–
–
–
–
–
–
–
–
–
Power-up
Reset (Reset) driven Low
Write disable (WRDI) instruction completion
Page write (PW) instruction completion
Write status register (WRSR) instruction completion
Page program (PP) instruction completion
Write to lock register (WRLR) instruction completion
Page erase (PE) instruction completion
Subsector erase (SSE) instruction completion
Sector erase (SE) instruction completion
Bulk erase (BE) instruction completion
■
■
The Reset (Reset) signal can be driven Low to freeze and reset the internal logic. For
the specific cases of program and write cycles, the designer should refer to Section 6.5:
Write status register (WRSR), Section 6.9: Page write (PW), Section 6.10: Page
program (PP), Section 6.12: Page erase (PE), Section 6.13: Sector erase (SE) and
Section 6.14: Subsector erase (SSE), and to Table 12: Device status after a Reset Low
pulse.
In addition to the low power consumption feature, the deep power-down mode offers
extra software protection from inadvertent write, program and erase instructions while
the device is not in active use.
14/58
M25PE16
Operating features
4.8.2
Specific hardware and software protections
There are two software protected modes, SPM1 and SPM2, that can be combined to protect
the memory array as required. The SPM2 can be hardware protected with the help of the W
input pin.
SPM1 and SPM2
■
The first software protected mode (SPM1) is managed by specific lock registers
assigned to each 64 Kbyte sector.
The lock registers can be read and written using the read lock register (RDLR) and
write to lock register (WRLR) instructions.
In each lock register two bits control the protection of each sector: the write lock bit and
the lock down bit.
–
Write lock bit:
The write lock bit determines whether the contents of the sector can be modified
(using the write, program or erase instructions). When the write lock bit is set to ‘1’,
the sector is write protected – any operations that attempt to change the data in
the sector will fail. When the write lock bit is reset to ‘0’, the sector is not write
protected by the lock register, and may be modified.
–
Lock down bit:
The lock down bit provides a mechanism for protecting software data from simple
hacking and malicious attack. When the lock down bit is set to ‘1’, further
modification to the write lock and lock down bits cannot be performed. A reset, or
power-up, is required before changes to these bits can be made. When the lock
down bit is reset to ‘0’, the write lock and lock down bits can be changed.
The write lock bit and the lock down bit are volatile and their value is reset to ‘0’ after a
power-down or a reset (see Table 12: Device status after a Reset Low pulse).
The definition of the lock register bits is given in Table 9: Lock register out.
Table 2.
Software protection truth table (sectors 0 to 31, 64-Kbyte granularity)
Sector lock register
Protection status
Lock
Write
down bit lock bit
Sector unprotected from program/erase/write operations, protection status
reversible
0
0
1
1
0
1
0
1
Sector protected from program/erase/write operations, protection status
reversible
Sector unprotected from program/erase/write operations,
sector protection status cannot be changed except by a reset or power-up.
Sector protected from program/erase/write operations,
Sector protection status cannot be changed except by a reset or power-up.
15/58
Operating features
M25PE16
■
The second software protected mode (SPM2) uses the block protect (BP2, BP1,
BP0, see Section 6.4.3)) bits to allow part of the memory to be configured as read-only.
Table 3.
Protected area sizes
Status register
content
Memory content
BP2 BP1 BP0
Protected area
Unprotected area
bit
bit bit
0
0
0
0
0
1
none
All sectors(1) (32 sectors: 0 to 31)
Upper 32nd (Sector 31)
Lower 31st/32nd (31 sectors: 0 to 30)
Upper sixteenth (two sectors: 30 and
31)
0
0
1
1
1
0
0
1
0
Lower 15/16ths (30 sectors: 0 to 29)
Upper eighth (four sectors: 28 to 31) Lower seven-eighths (28 sectors: 0 to 27)
Upper quarter (eight sectors: 24 to
Lower three-quarters (24 sectors: 0 to 23)
31)
1
1
1
0
1
1
1
0
1
Upper half (sixteen sectors: 16 to 31) Lower half (16 sectors: 0 to 15)
All sectors (32 sectors: 0 to 31)
All sectors (32 sectors: 0 to 31)
none
none
1. The device is ready to accept a bulk erase instruction if, and only if, all block protect (BP2, BP1, BP0) are 0.
16/58
M25PE16
Memory organization
5
Memory organization
The memory is organized as:
■
■
■
■
8192 pages (256 bytes each).
2,097,152 bytes (8 bits each)
32 sectors (512 Kbits, 65536 bytes each)
512 subsectors (32 Kbits, 4096 bytes each)
Each page can be individually:
■
■
■
programmed (bits are programmed from 1 to 0)
erased (bits are erased from 0 to 1)
written (bits are changed to either 0 or 1)
The device is page, sector or bulk erasable (bits are erased from 0 to 1).
Table 4. Memory organization
Sector Subsector
Address range
Sector Subsector
Address range
511
1FF000h 1FFFFFh
383
17F000h
17FFFFh
31
23
496
495
30
1F0000h 1F0FFFh
1EF000h 1EFFFFh
368
367
22
170000h
16F000h
170FFFh
16FFFFh
480
479
29
1E0000h 1E0FFFh
1DF000h 1DFFFFh
352
351
21
160000h
15F000h
160FFFh
15FFFFh
464
463
28
1D0000h 1D0FFFh
1CF000h 1CFFFFh
336
335
20
150000h
14F000h
150FFFh
14FFFFh
448
447
27
1C0000h 1C0FFFh
1BF000h 1BFFFFh
320
319
19
140000h
13F000h
140FFFh
13FFFFh
432
431
26
1B0000h 1B0FFFh
1AF000h 1AFFFFh
304
303
18
130000h
12F000h
130FFFh
12FFFFh
416
415
25
1A0000h 1A0FFFh
19F000h 19FFFFh
288
287
17
120000h
11F000h
120FFFh
11FFFFh
400
399
24
190000h
190FFFh
272
271
16
110000h
10F000h
110FFFh
10FFFFh
18F000h 18FFFFh
384
180000h
180FFFh
256
100000h
100FFFh
17/58
Memory organization
Table 4.
M25PE16
Memory organization (continued)
Address range
Sector Subsector
Sector Subsector
Address range
255
FF000h
FFFFFh
111
6F000h
6FFFFh
15
14
13
12
11
10
9
6
240
239
F0000h
EF000h
F0FFFh
EFFFFh
96
95
5
60000h
5F000h
60FFFh
5FFFFh
224
223
E0000h
DF000h
E0FFFh
DFFFFh
80
79
4
50000h
4F000h
50FFFh
4FFFFh
208
207
D0000h
CF000h
D0FFFh
CFFFFh
64
63
3
40000h
3F000h
40FFFh
3FFFFh
192
191
C0000h
BF000h
C0FFFh
BFFFFh
48
47
2
30000h
2F000h
30FFFh
2FFFFh
176
175
B0000h
AF000h
B0FFFh
AFFFFh
32
31
1
20000h
1F000h
20FFFh
1FFFFh
160
159
A0000h
9F000h
A0FFFh
9FFFFh
16
15
10000h
0F000h
10FFFh
0FFFFh
144
143
90000h
8F000h
90FFFh
8FFFFh
4
04000h
03000h
02000h
01000h
00000h
04FFFh
03FFFh
02FFFh
01FFFh
00FFFh
0
3
2
1
0
8
128
127
80000h
7F000h
80FFFh
7FFFFh
7
112
70000h
70FFFh
18/58
M25PE16
Memory organization
Figure 5.
Block diagram
Reset
W
High voltage
generator
Control logic
S
C
D
Q
I/O shift register
Status
register
Address register
and counter
256-byte
data buffer
1FFFFFh
Size of the
read-only
memory area
Whole memory array can
be made read-only on a
64-Kbyte basis through the
lock registers
00000h
000FFh
256 bytes (page size)
X decoder
AI12346c
19/58
Instructions
M25PE16
6
Instructions
All instructions, addresses and data are shifted in and out of the device, most significant bit
first.
Serial data input (D) is sampled on the first rising edge of Serial Clock (C) after Chip Select
(S) is driven Low. Then, the one-byte instruction code must be shifted in to the device, most
significant bit first, on serial data input (D), each bit being latched on the rising edges of
Serial Clock (C).
The instruction set is listed in Table 5.
Every instruction sequence starts with a one-byte instruction code. Depending on the
instruction, this might be followed by address bytes, or by data bytes, or by both or none.
In the case of a read data bytes (READ), read data bytes at higher speed (Fast_Read), read
identification (RDID), read status register (RDSR), or read lock register (RDLR) instruction,
the shifted-in instruction sequence is followed by a data-out sequence. Chip Select (S) can
be driven High after any bit of the data-out sequence is being shifted out.
In the case of a page write (PW), page program (PP), write to lock register (WRLR), page
erase (PE), sector erase (SE), subsector erase (SSE), bulk erase (BE), write status register
(WRSR), write enable (WREN), write disable (WRDI), deep power-down (DP) or release
from deep power-down (RDP) instruction, Chip Select (S) must be driven High exactly at a
byte boundary, otherwise the instruction is rejected, and is not executed. That is, Chip
Select (S) must driven High when the number of clock pulses after Chip Select (S) being
driven Low is an exact multiple of eight.
All attempts to access the memory array during a write cycle, program cycle or erase cycle
are ignored, and the internal write cycle, program cycle or erase cycle continues unaffected.
20/58
M25PE16
Instructions
Table 5.
Instruction set
Description
One-byte Instruction Address Dummy
Data
Instruction
Code
bytes
bytes
bytes
WREN
WRDI
RDID
Write enable
0000 0110
06h
04h
9Fh
05h
01h
E5h
E8h
03h
0
0
0
0
0
3
3
3
0
0
0
0
0
0
0
0
0
Write disable
0000 0100
1001 1111
0000 0101
0000 0001
1110 0101
1110 1000
0000 0011
0
1 to 3
1 to ∞
1
Read identification
Read status register
Write status register
Write to lock register
Read lock register
Read data bytes
RDSR
WRSR
WRLR
RDLR
READ
1
1
1 to ∞
Read data bytes at higher
speed
FAST_READ
0000 1011
0Bh
3
1
1 to ∞
PW
PP
Page write
0000 1010
0000 0010
1101 1011
1101 1000
0010 0000
1100 0111
1011 1001
0Ah
02h
DBh
D8h
20h
C7h
B9h
3
3
3
3
3
0
0
0
0
0
0
0
0
0
1 to 256
Page program
Page erase
1 to 256
PE
0
0
0
0
0
SE
Sector erase
Subsector erase
Bulk erase
SSE
BE
DP
Deep power-down
Release from deep
power-down
RDP
1010 1011
ABh
0
0
0
21/58
Instructions
M25PE16
6.1
Write enable (WREN)
The write enable (WREN) instruction (Figure 6) sets the write enable latch (WEL) bit.
The write enable latch (WEL) bit must be set prior to every page write (PW), page program
(PP), page erase (PE), sector erase (SE), subsector erase (SSE), bulk erase (BE), write
status register (WRSR) and write to lock register (WRLR) instructions.
The write enable (WREN) instruction is entered by driving Chip Select (S) Low, sending the
instruction code, and then driving Chip Select (S) High.
Figure 6.
Write enable (WREN) instruction sequence
S
0
1
2
3
4
5
6
7
C
D
Q
Instruction
High Impedance
AI02281E
22/58
M25PE16
Instructions
6.2
Write disable (WRDI)
The write disable (WRDI) instruction (Figure 7) resets the write enable latch (WEL) bit.
The write disable (WRDI) instruction is entered by driving Chip Select (S) Low, sending the
instruction code, and then driving Chip Select (S) High.
The write enable latch (WEL) bit is reset under the following conditions:
■
■
■
■
■
■
■
■
■
■
Power-up
Write disable (WRDI) instruction completion
Write status register (WRSR) instruction completion
Page write (PW) instruction completion
Page program (PP) instruction completion
Write to lock register (WRLR) instruction completion
Page erase (PE) instruction completion
Sector erase (SE) instruction completion
Subsector erase (SSE) instruction completion
Bulk erase (BE) instruction completion
Figure 7.
Write disable (WRDI) instruction sequence
S
0
1
2
3
4
5
6
7
C
D
Q
Instruction
High Impedance
AI03750D
23/58
Instructions
M25PE16
6.3
Read identification (RDID)
The read identification (RDID) instruction allows to read the device identification data:
■
Manufacturer identification (1 byte)
■
■
Device identification (2 bytes)
A unique ID code (UID) (17 bytes, of which 16 available upon customer request)
The manufacturer identification is assigned by JEDEC, and has the value 20h for Numonyx.
The device identification is assigned by the device manufacturer, and indicates the memory
type in the first byte (80h), and the memory capacity of the device in the second byte (15h).
The UID contains the length of the following data in the first byte (set to 10h), and 16 bytes
of the optional customized factory data (CFD) content. The CFD bytes are read-only and
can be programmed with customers data upon their demand. If the customers do not make
requests, the device is shipped with all the CFD bytes programmed to zero (00h).
Any read identification (RDID) instruction while an erase or program cycle is in progress, is
not decoded, and has no effect on the cycle that is in progress.
The device is first selected by driving Chip Select (S) Low. Then, the 8-bit instruction code
for the instruction is shifted in. After this, the 24-bit device identification, stored in the
memory, the 8-bit CFD length followed by 16 bytes of CFD content will be shifted out on
serial data output (Q). Each bit is shifted out during the falling edge of Serial Clock (C).
The instruction sequence is shown in Figure 8.
The read identification (RDID) instruction is terminated by driving Chip Select (S) High at
any time during data output.
When Chip Select (S) is driven High, the device is put in the standby power mode. Once in
the standby power mode, the device waits to be selected, so that it can receive, decode and
execute instructions.
Table 6.
Read identification (RDID) data-out sequence
Device identification
UID
Manufacturer
identification
Memory type
80h
Memory capacity
CFD length
CFD content
20h
15h
10h
16 bytes
Figure 8.
Read identification (RDID) instruction sequence and data-out sequence
S
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
16 17 18
28 29 30 31
C
D
Instruction
Manufacturer identification
Device identification
UID
High Impedance
Q
15 14 13
MSB
3
2
1
0
MSB
MSB
AI06809c
24/58
M25PE16
Instructions
6.4
Read status register (RDSR)
The read status register (RDSR) instruction allows the status register to be read. The status
register may be read at any time, even while a program, erase or write cycle is in progress.
When one of these cycles is in progress, it is recommended to check the write in progress
(WIP) bit before sending a new instruction to the device. It is also possible to read the status
register continuously, as shown in Figure 9.
The status bits of the status register are as follows:
6.4.1
6.4.2
6.4.3
WIP bit
The write in progress (WIP) bit indicates whether the memory is busy with a write, program
or erase cycle. When set to ‘1’, such a cycle is in progress, when reset to ‘0’ no such cycle is
in progress.
WEL bit
The write enable latch (WEL) bit indicates the status of the internal write enable latch. When
set to ‘1’ the internal write enable latch is set, when set to ‘0’ the internal write enable latch is
reset and no write, program or erase instruction is accepted.
BP2, BP1, BP0 bits
The block protect (BP2, BP1, BP0) bits are non-volatile. They define the size of the area to
be software protected against program and erase instructions. These bits are written with
the write status register (WRSR) instruction. When one or more of the block protect (BP2,
BP1, BP0) bits is set to ‘1’, the relevant memory area (as defined in Table 3) becomes
protected against page program (PP), sector erase (SE) and subsector erase (SSE)
instructions. The block protect (BP2, BP1, BP0) bits can be written provided that the
hardware protected mode has not been set. The bulk erase (BE) instruction is executed if,
and only if:
■
■
all block protect (BP2, BP1, BP0) bits are 0
the lock register protection bits are not all set (‘1’)
6.4.4
SRWD bit
The status register write disable (SRWD) bit is operated in conjunction with the Write
Protect (W) signal. When the status register write disable (SRWD) bit is set to ‘1’, and Write
Protect (W) is driven Low, the non-volatile bits of the status register (SRWD, BP2, BP1, BP0)
become read-only bits. In such a state, as the write status register (WRSR) instruction is no
longer accepted for execution, the definition of the size of the write protected area cannot be
further modified.
(1) (2)
Table 7.
Status register format
b7
b0
SRWD
0
0
BP2
BP1
BP0
WEL
WIP
1. WEL (write enable latch) and WIP ((write in progress) are volatile read-only bits (WEL is set and reset by
specific instructions; WIP is automatically set and reset by the internal logic of the device).
2. SRWD = status register write protect bit; BP0, BP1, BP2 = block protect bits.
25/58
Instructions
M25PE16
Figure 9.
Read status register (RDSR) instruction sequence and data-out sequence
S
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
C
D
Instruction
Status register out
Status register out
High Impedance
Q
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
MSB
MSB
AI02031E
26/58
M25PE16
Instructions
6.5
Write status register (WRSR)
The write status register (WRSR) instruction allows new values to be written to the status
register. Before it can be accepted, a write enable (WREN) instruction must previously have
been executed. After the write enable (WREN) instruction has been decoded and executed,
the device sets the write enable latch (WEL).
The write status register (WRSR) instruction is entered by driving Chip Select (S) Low,
followed by the instruction code and the data byte on serial data input (D).
The instruction sequence is shown in Figure 10.
The write status register (WRSR) instruction has no effect on b6, b5, b1 and b0 of the status
register. b6 and b5 are always read as 0.
Chip Select (S) must be driven High after the eighth bit of the data byte has been latched in.
If not, the write status register (WRSR) instruction is not executed. As soon as Chip Select
(S) is driven High, the self-timed write status register cycle (whose duration is t ) is initiated.
W
While the write status register cycle is in progress, the status register may still be read to
check the value of the write in progress (WIP) bit. The write in progress (WIP) bit is 1 during
the self-timed write status register cycle, and is 0 when it is completed. When the cycle is
completed, the write enable latch (WEL) is reset.
The write status register (WRSR) instruction allows the user to change the values of the
block protect (BP2, BP1, BP0) bits, to define the size of the area that is to be treated as
read-only, as defined in Table 3. The write status register (WRSR) instruction also allows the
user to set or reset the status register write disable (SRWD) bit in accordance with the Write
Protect (W) signal (see Section 6.4.4).
If a write status register (WRSR) instruction is interrupted by a Reset Low pulse, the internal
cycle of the write status register operation (whose duration is t ) is first completed (provided
W
that the supply voltage V remains within the operating range). After that the device enters
CC
the reset mode (see also Table 12: Device status after a Reset Low pulse and Table 21:
Timings after a Reset Low pulse).
Figure 10. Write status register (WRSR) instruction sequence
S
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
C
Instruction
Status
register in
7
6
5
4
3
2
0
1
D
Q
High Impedance
MSB
AI02282D
27/58
Instructions
M25PE16
Table 8.
Protection modes
Memory content
Protected area(1) Unprotected area(1)
W
signal
SRWD
bit
Write protection of the
Mode
status register
1
0
0
0
Status Register is Writable
(if the WREN instruction
has set the WEL bit)
Second
software
protected
(SPM2)
Protected against
page program,
sector erase and
bulk erase
Ready to accept
page program and
sector erase
The values in the SRWD,
BP2, BP1 and BP0 bits
can be changed
instructions
1
1
Status register is hardware
write protected
Protected against
page program,
sector erase and
bulk erase
Ready to accept
page program and
sector erase
Hardware
protected
(HPM)
0
1
The values in the SRWD,
BP2, BP1 and BP0 bits
cannot be changed
instructions
1. As defined by the values in the block protect (BP2, BP1, BP0) bits of the status register, as shown in
Table 3.
The protection features of the device are summarized in Table 8.
When the status register write disable (SRWD) bit of the status register is 0 (its initial
delivery state), it is possible to write to the status register provided that the write enable latch
(WEL) bit has previously been set by a write enable (WREN) instruction, regardless of the
whether Write Protect (W) is driven High or Low.
When the status register write disable (SRWD) bit of the status register is set to ‘1’, two
cases need to be considered, depending on the state of Write Protect (W):
■
If Write Protect (W) is driven High, it is possible to write to the status register provided
that the write enable latch (WEL) bit has previously been set by a write enable (WREN)
instruction.
■
If Write Protect (W) is driven Low, it is not possible to write to the status register even if
the write enable latch (WEL) bit has previously been set by a write enable (WREN)
instruction. Attempts to write to the status register are rejected, and are not accepted
for execution. As a consequence, all the data bytes in the memory area that are
software protected (SPM2) by the block protect (BP2, BP1, BP0) bits of the status
register, are also hardware protected against data modification.
Regardless of the order of the two events, the hardware protected mode (HPM) can be
entered:
■
by setting the status register write disable (SRWD) bit after driving Write Protect (W)
Low
■
or by driving Write Protect (W) Low after setting the status register write disable
(SRWD) bit.
The only way to exit the hardware protected mode (HPM) once entered is to pull Write
Protect (W) High.
If Write Protect (W) is permanently tied High, the hardware protected mode (HPM) can
never be activated, and only the software protected mode (SPM2), using the block protect
(BP2, BP1, BP0) bits of the status register, can be used.
28/58
M25PE16
Instructions
6.6
Read data bytes (READ)
The device is first selected by driving Chip Select (S) Low. The instruction code for the read
data bytes (READ) instruction is followed by a 3-byte address (A23-A0), each bit being
latched-in during the rising edge of Serial Clock (C). Then the memory contents, at that
address, is shifted out on serial data output (Q), each bit being shifted out, at a maximum
frequency f , during the falling edge of Serial Clock (C).
R
The instruction sequence is shown in Figure 11.
The first byte addressed can be at any location. The address is automatically incremented
to the next higher address after each byte of data is shifted out. The whole memory can,
therefore, be read with a single read data bytes (READ) instruction. When the highest
address is reached, the address counter rolls over to 000000h, allowing the read sequence
to be continued indefinitely.
The read data bytes (READ) instruction is terminated by driving Chip Select (S) High. Chip
Select (S) can be driven High at any time during data output. Any read data bytes (READ)
instruction, while an erase, program or write cycle is in progress, is rejected without having
any effects on the cycle that is in progress.
Figure 11. Read data bytes (READ) instruction sequence and data-out sequence
S
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31 32 33 34 35 36 37 38 39
C
Instruction
24-bit address
23 22 21
MSB
3
2
1
0
D
Q
Data out 1
Data out 2
High Impedance
2
7
6
5
4
3
1
7
0
MSB
AI03748D
1. Address bits A23 to A21 are don’t care.
29/58
Instructions
M25PE16
6.7
Read data bytes at higher speed (FAST_READ)
The device is first selected by driving Chip Select (S) Low. The instruction code for the read
data bytes at higher speed (FAST_READ) instruction is followed by a 3-byte address (A23-
A0) and a dummy byte, each bit being latched-in during the rising edge of Serial Clock (C).
Then the memory contents, at that address, is shifted out on serial data output (Q), each bit
being shifted out, at a maximum frequency f , during the falling edge of Serial Clock (C).
C
The instruction sequence is shown in Figure 12.
The first byte addressed can be at any location. The address is automatically incremented
to the next higher address after each byte of data is shifted out. The whole memory can,
therefore, be read with a single read data bytes at higher speed (FAST_READ) instruction.
When the highest address is reached, the address counter rolls over to 000000h, allowing
the read sequence to be continued indefinitely.
The read data bytes at higher speed (FAST_READ) instruction is terminated by driving Chip
Select (S) High. Chip Select (S) can be driven High at any time during data output. Any read
data bytes at higher speed (FAST_READ) instruction, while an erase, program or write cycle
is in progress, is rejected without having any effects on the cycle that is in progress.
Figure 12. Read data bytes at higher speed (FAST_READ) instruction sequence
and data-out sequence
S
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31
C
Instruction
24-bit address
23 22 21
3
2
1
0
D
Q
High Impedance
S
C
47
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46
Dummy byte
7
6
5
4
3
2
0
1
D
Q
DATA OUT 2
DATA OUT 1
7
6
5
4
3
2
1
0
7
7
6
5
4
3
2
0
1
MSB
MSB
MSB
AI04006
1. Address bits A23 to A21 are don’t care.
30/58
M25PE16
Instructions
6.8
Read lock register (RDLR)
The device is first selected by driving Chip Select (S) Low. The instruction code for the read
lock register (RDLR) instruction is followed by a 3-byte address (A23-A0) pointing to any
location inside the concerned sector. Each address bit is latched-in during the rising edge of
Serial Clock (C). Then the value of the lock register is shifted out on serial data output (Q),
each bit being shifted out, at a maximum frequency f , during the falling edge of Serial Clock
C
(C).
The instruction sequence is shown in Figure 13.
The read lock register (RDLR) instruction is terminated by driving Chip Select (S) High at
any time during data output.
Any read lock register (RDLR) instruction, while an erase, program or write cycle is in
progress, is rejected without having any effects on the cycle that is in progress.
Table 9.
Bit
Lock register out
Bit name
Value
Function
b7-b2
Reserved
The write lock and lock down bits cannot be changed. Once a
‘1’ is written to the lock down bit it cannot be cleared to ‘0’,
except by a reset or power-up.
‘1’
b1
Sector lock down
Sector write lock
The write lock and lock down bits can be changed by writing
new values to them (default value).
‘0’
‘1’
‘0’
Write, program and erase operations in this sector will not be
executed. The memory contents will not be changed.
b0
Write, program and erase operations in this sector are
executed and will modify the sector contents (default value).
Figure 13. Read lock register (RDLR) instruction sequence
and data-out sequence
S
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31 32 33 34 35 36 37 38 39
C
Instruction
24-bit address
23 22 21
MSB
3
2
1
0
D
Q
Lock register out
High Impedance
2
7
6
5
4
3
1
0
MSB
AI10783
31/58
Instructions
M25PE16
6.9
Page write (PW)
The page write (PW) instruction allows bytes to be written in the memory. Before it can be
accepted, a write enable (WREN) instruction must previously have been executed. After the
write enable (WREN) instruction has been decoded, the device sets the write enable latch
(WEL).
The page write (PW) instruction is entered by driving Chip Select (S) Low, followed by the
instruction code, three address bytes and at least one data byte on serial data input (D). The
rest of the page remains unchanged if no power failure occurs during this write cycle.
The page write (PW) instruction performs a page erase cycle even if only one byte is
updated.
If the 8 least significant address bits (A7-A0) are not all zero, all transmitted data exceeding
the addressed page boundary roll over, and are written from the start address of the same
page (the one whose 8 least significant address bits (A7-A0) are all zero). Chip Select (S)
must be driven Low for the entire duration of the sequence.
The instruction sequence is shown in Figure 14.
If more than 256 bytes are sent to the device, previously latched data are discarded and the
last 256 data bytes are guaranteed to be written correctly within the same page. If less than
256 data bytes are sent to device, they are correctly written at the requested addresses
without having any effects on the other bytes of the same page.
For optimized timings, it is recommended to use the page write (PW) instruction to write all
consecutive targeted bytes in a single sequence versus using several page write (PW)
sequences with each containing only a few bytes
Chip Select (S) must be driven High after the eighth bit of the last data byte has been
latched in, otherwise the page write (PW) instruction is not executed.
As soon as Chip Select (S) is driven High, the self-timed page write cycle (whose duration is
t
) is initiated. While the page write cycle is in progress, the status register may be read to
PW
check the value of the write in progress (WIP) bit. The write in progress (WIP) bit is 1 during
the self-timed page write cycle, and is 0 when it is completed. At some unspecified time
before the cycle is complete, the write enable latch (WEL) bit is reset.
A page write (PW) instruction applied to a page that is hardware or software protected is not
executed.
Any page write (PW) instruction, while an erase, program or write cycle is in progress, is
rejected without having any effects on the cycle that is in progress.
If Reset (Reset) is driven Low while a page write (PW) cycle is in progress, the page write
cycle is interrupted and the programmed data may be corrupted (see Table 12: Device
status after a Reset Low pulse). On Reset going Low, the device enters the reset mode and
a time of t
is then required before the device can be re-selected by driving Chip Select
RHSL
(S) Low. For the value of t
see Table 21: Timings after a Reset Low pulse in Section 11:
RHSL
DC and AC parameters.
32/58
M25PE16
Instructions
Figure 14. Page write (PW) instruction sequence
S
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31 32 33 34 35 36 37 38 39
C
D
Instruction
24-bit address
Data byte 1
23 22 21
MSB
3
2
1
0
7
6
5
4
3
2
0
1
MSB
S
C
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
Data byte 2
Data byte 3
Data byte n
7
6
5
4
3
2
0
7
6
5
4
3
2
0
7
6
5
4
3
2
0
1
1
1
D
MSB
MSB
MSB
AI04045
1. Address bits A23 to A21 are don’t care.
2. 1 ≤ n ≤ 256.
33/58
Instructions
M25PE16
6.10
Page program (PP)
The page program (PP) instruction allows bytes to be programmed in the memory (changing
bits from 1 to 0, only). Before it can be accepted, a write enable (WREN) instruction must
previously have been executed. After the write enable (WREN) instruction has been
decoded, the device sets the write enable latch (WEL).
The page program (PP) instruction is entered by driving Chip Select (S) Low, followed by the
instruction code, three address bytes and at least one data byte on serial data input (D). If
the 8 least significant address bits (A7-A0) are not all zero, all transmitted data exceeding
the addressed page boundary roll over, and are programmed from the start address of the
same page (the one whose 8 least significant address bits (A7-A0) are all zero). Chip Select
(S) must be driven Low for the entire duration of the sequence.
The instruction sequence is shown in Figure 15.
If more than 256 bytes are sent to the device, previously latched data are discarded and the
last 256 data bytes are guaranteed to be programmed correctly within the same page. If less
than 256 data bytes are sent to device, they are correctly programmed at the requested
addresses without having any effects on the other bytes of the same page.
For optimized timings, it is recommended to use the page program (PP) instruction to
program all consecutive targeted bytes in a single sequence versus using several page
program (PP) sequences with each containing only a few bytes (see Table 18: AC
characteristics (50 MHz operation) and Table 19: AC characteristics (75 MHz operation)).
Chip Select (S) must be driven High after the eighth bit of the last data byte has been
latched in, otherwise the page program (PP) instruction is not executed.
As soon as Chip Select (S) is driven High, the self-timed page program cycle (whose
duration is t ) is initiated. While the page program cycle is in progress, the status register
PP
may be read to check the value of the write in progress (WIP) bit. The write in progress
(WIP) bit is 1 during the self-timed page program cycle, and is 0 when it is completed. At
some unspecified time before the cycle is complete, the write enable latch (WEL) bit is reset.
A page program (PP) instruction applied to a page that is hardware or software protected is
not executed.
Any page program (PP) instruction, while an erase, program or write cycle is in progress, is
rejected without having any effects on the cycle that is in progress.
If Reset (Reset) is driven Low while a page program (PP) cycle is in progress, the page
program cycle is interrupted and the programmed data may be corrupted (see Table 12:
Device status after a Reset Low pulse). On Reset going Low, the device enters the reset
mode and a time of t
is then required before the device can be re-selected by driving
RHSL
Chip Select (S) Low. For the value of t
see Table 21: Timings after a Reset Low pulse in
RHSL
Section 11: DC and AC parameters.
34/58
M25PE16
Instructions
Figure 15. Page program (PP) instruction sequence
S
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31 32 33 34 35 36 37 38 39
C
Instruction
24-bit address
Data byte 1
23 22 21
MSB
3
2
1
0
7
6
5
4
3
2
0
1
D
S
C
MSB
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
Data byte 2
Data byte 3
Data byte n
7
6
5
4
3
2
0
7
6
5
4
3
2
0
7
6
5
4
3
2
0
1
1
1
D
MSB
MSB
MSB
AI04044
1. Address bits A23 to A21 are don’t care.
2. 1 ≤ n ≤ 256.
35/58
Instructions
M25PE16
6.11
Write to lock register (WRLR)
The write to lock register (WRLR) instruction allows bits to be changed in the lock registers.
Before it can be accepted, a write enable (WREN) instruction must previously have been
executed. After the write enable (WREN) instruction has been decoded, the device sets the
write enable latch (WEL).
The write to lock register (WRLR) instruction is entered by driving Chip Select (S) Low,
followed by the instruction code, three address bytes (pointing to any address in the targeted
sector and one data byte on serial data input (D). The instruction sequence is shown in
Figure 16. Chip Select (S) must be driven High after the eighth bit of the data byte has been
latched in, otherwise the write to lock register (WRLR) instruction is not executed.
Lock register bits are volatile, and therefore do not require time to be written. When the write
to lock register (WRLR) instruction has been successfully executed, the write enable latch
(WEL) bit is reset after a delay time less than t
minimum value.
SHSL
Any write to lock register (WRLR) instruction, while an erase, program or write cycle is in
progress, is rejected without having any effects on the cycle that is in progress.
Figure 16. Write to lock register (WRLR) instruction sequence
S
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31 32 33 34 35 36 37 38 39
C
D
Lock register
in
Instruction
24-bit address
23 22 21
MSB
3
2
1
0
7
6
5
4
3
2
0
1
MSB
AI10784
Table 10. Lock register in
Sector Bit
Value
‘0’
b7-b2
b1
All sectors
Sector lock down bit value (refer to Table 9)
Sector write lock bit value (refer to Table 9)
b0
36/58
M25PE16
Instructions
6.12
Page erase (PE)
The page erase (PE) instruction sets to ‘1’ (FFh) all bits inside the chosen page. Before it
can be accepted, a write enable (WREN) instruction must previously have been executed.
After the write enable (WREN) instruction has been decoded, the device sets the write
enable latch (WEL).
The page erase (PE) instruction is entered by driving Chip Select (S) Low, followed by the
instruction code, and three address bytes on serial data input (D). Any address inside the
page is a valid address for the page erase (PE) instruction. Chip Select (S) must be driven
Low for the entire duration of the sequence.
The instruction sequence is shown in Figure 17.
Chip Select (S) must be driven High after the eighth bit of the last address byte has been
latched in, otherwise the page erase (PE) instruction is not executed. As soon as Chip
Select (S) is driven High, the self-timed page erase cycle (whose duration is t ) is initiated.
PE
While the page erase cycle is in progress, the status register may be read to check the value
of the write in progress (WIP) bit. The write in progress (WIP) bit is 1 during the self-timed
page erase cycle, and is 0 when it is completed. At some unspecified time before the cycle
is complete, the write enable latch (WEL) bit is reset.
A page erase (PE) instruction applied to a page that is hardware or software protected is not
executed.
Any page erase (PE) instruction, while an erase, program or write cycle is in progress, is
rejected without having any effects on the cycle that is in progress.
If Reset (Reset) is driven Low while a page erase (PE) cycle is in progress, the page erase
cycle is interrupted and the programmed data may be corrupted (see Table 12: Device
status after a Reset Low pulse). On Reset going Low, the device enters the reset mode and
a time of t
is then required before the device can be re-selected by driving Chip Select
RHSL
(S) Low. For the value of t
see Table 21: Timings after a Reset Low pulse in Section 11:
RHSL
DC and AC parameters.
Figure 17. Page erase (PE) instruction sequence
S
0
1
2
3
4
5
6
7
8
9
29 30 31
C
D
Instruction
24-bit address
23 22
MSB
2
0
1
AI04046
1. Address bits A23 to A21 are don’t care.
37/58
Instructions
M25PE16
6.13
Sector erase (SE)
The sector erase (SE) instruction sets to ‘1’ (FFh) all bits inside the chosen sector. Before it
can be accepted, a write enable (WREN) instruction must previously have been executed.
After the write enable (WREN) instruction has been decoded, the device sets the write
enable latch (WEL).
The sector erase (SE) instruction is entered by driving Chip Select (S) Low, followed by the
instruction code, and three address bytes on serial data input (D). Any address inside the
sector (see Table 4) is a valid address for the sector erase (SE) instruction. Chip Select (S)
must be driven Low for the entire duration of the sequence.
The instruction sequence is shown in Figure 18.
Chip Select (S) must be driven High after the eighth bit of the last address byte has been
latched in, otherwise the sector erase (SE) instruction is not executed. As soon as Chip
Select (S) is driven High, the self-timed sector erase cycle (whose duration is t ) is
SE
initiated. While the sector erase cycle is in progress, the status register may be read to
check the value of the write in progress (WIP) bit. The write in progress (WIP) bit is 1 during
the self-timed sector erase cycle, and is 0 when it is completed. At some unspecified time
before the cycle is complete, the write enable latch (WEL) bit is reset.
A sector erase (SE) instruction applied to a sector that contains a page that is hardware or
software protected is not executed.
Any sector erase (SE) instruction, while an erase, program or write cycle is in progress, is
rejected without having any effects on the cycle that is in progress.
If Reset (Reset) is driven Low while a sector erase (SE) cycle is in progress, the sector
erase cycle is interrupted and data may not be erased (see Table 12: Device status after a
Reset Low pulse). On Reset going Low, the device enters the reset mode and a time of
t
is then required before the device can be re-selected by driving Chip Select (S) Low.
RHSL
For the value of t
see Table 21: Timings after a Reset Low pulse in Section 11: DC and
RHSL
AC parameters.
Figure 18. Sector erase (SE) instruction sequence
S
0
1
2
3
4
5
6
7
8
9
29 30 31
C
D
Instruction
24-bit address
23 22
MSB
2
0
1
AI03751D
1. Address bits A23 to A21 are don’t care.
38/58
M25PE16
Instructions
6.14
Subsector erase (SSE)
The subsector erase (SSE) instruction sets to ‘1’ (FFh) all bits inside the chosen subsector.
Before it can be accepted, a write enable (WREN) instruction must previously have been
executed. After the write enable (WREN) instruction has been decoded, the device sets the
write enable latch (WEL).
The subsector erase (SE) instruction is entered by driving Chip Select (S) Low, followed by
the instruction code, and three address bytes on serial data input (D). Any address inside
the subsector (see Table 4) is a valid address for the subsector erase (SE) instruction. Chip
Select (S) must be driven Low for the entire duration of the sequence.
The instruction sequence is shown in Figure 18.
Chip Select (S) must be driven High after the eighth bit of the last address byte has been
latched in, otherwise the subsector erase (SE) instruction is not executed. As soon as Chip
Select (S) is driven High, the self-timed subsector erase cycle (whose duration is t
) is
SSE
initiated. While the subsector erase cycle is in progress, the status register may be read to
check the value of the write in progress (WIP) bit. The write in progress (WIP) bit is 1 during
the self-timed subsector erase cycle, and is 0 when it is completed. At some unspecified
time before the cycle is complete, the write enable latch (WEL) bit is reset.
A subsector erase (SSE) instruction applied to a subsector that contains a page that is
hardware or software protected is not executed.
Any subsector erase (SSE) instruction, while an erase, program or write cycle is in progress,
is rejected without having any effects on the cycle that is in progress.
If Reset (Reset) is driven Low while a subsector erase (SSE) cycle is in progress, the
subsector erase cycle is interrupted and data may not be erased correctly (see Table 12:
Device status after a Reset Low pulse). On Reset going Low, the device enters the reset
mode and a time of t
is then required before the device can be re-selected by driving
RHSL
Chip Select (S) Low. For the value of t
see Table 21: Timings after a Reset Low pulse in
RHSL
Section 11: DC and AC parameters.
Figure 19. Subsector erase (SSE) instruction sequence
S
0
1
2
3
4
5
6
7
8
9
29 30 31
C
D
Instruction
24-bit address
2
0
1
23 22
MSB
AI12356
1. Address bits A23 to A21 are don’t care.
39/58
Instructions
M25PE16
6.15
Bulk erase (BE)
The bulk erase (BE) instruction sets all bits to ‘1’ (FFh). Before it can be accepted, a write
enable (WREN) instruction must previously have been executed. After the write enable
(WREN) instruction has been decoded, the device sets the write enable latch (WEL).
The bulk erase (BE) instruction is entered by driving Chip Select (S) Low, followed by the
instruction code on serial data input (D). Chip Select (S) must be driven Low for the entire
duration of the sequence.
The instruction sequence is shown in Figure 20.
Chip Select (S) must be driven High after the eighth bit of the instruction code has been
latched in, otherwise the bulk erase instruction is not executed. As soon as Chip Select (S)
is driven High, the self-timed bulk erase cycle (whose duration is t ) is initiated. While the
BE
bulk erase cycle is in progress, the status register may be read to check the value of the
write in progress (WIP) bit. The write in progress (WIP) bit is 1 during the self-timed bulk
erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is
completed, the write enable latch (WEL) bit is reset.
Any bulk erase (BE) instruction, while an erase, program or write cycle is in progress, is
rejected without having any effects on the cycle that is in progress. A bulk erase (BE)
instruction is ignored if at least one sector or subsector is write-protected (hardware or
software protection).
If Reset (Reset) is driven Low while a bulk erase (BE) cycle is in progress, the bulk erase
cycle is interrupted and data may not be erased correctly (see Table 12: Device status after
a Reset Low pulse). On Reset going Low, the device enters the reset mode and a time of
t
is then required before the device can be re-selected by driving Chip Select (S) Low.
RHSL
For the value of t
see Table 21: Timings after a Reset Low pulse in Section 11: DC and
RHSL
AC parameters.
Figure 20. Bulk erase (BE) instruction sequence
S
0
1
2
3
4
5
6
7
C
D
Instruction
AI03752D
40/58
M25PE16
Instructions
6.16
Deep power-down (DP)
Executing the deep power-down (DP) instruction is the only way to put the device in the
lowest consumption mode (the deep power-down mode). It can also be used as an extra
software protection mechanism, while the device is not in active use, since in this mode, the
device ignores all write, program and erase instructions.
Driving Chip Select (S) High deselects the device, and puts the device in the standby mode
(if there is no internal cycle currently in progress). But this mode is not the deep power-down
mode. The deep power-down mode can only be entered by executing the deep power-down
(DP) instruction, subsequently reducing the standby current (from I
to I
, as specified
CC1
CC2
in Table 17).
Once the device has entered the deep power-down mode, all instructions are ignored
except the release from deep power-down (RDP) instruction. Issuing the release from deep
power-down (RDP) instruction will cause the device to exit the deep power-down mode.
The deep power-down mode automatically stops at power-down, and the device always
powers-up in the standby mode.
The deep power-down (DP) instruction is entered by driving Chip Select (S) Low, followed
by the instruction code on serial data input (D). Chip Select (S) must be driven Low for the
entire duration of the sequence.
The instruction sequence is shown in Figure 21.
Chip Select (S) must be driven High after the eighth bit of the instruction code has been
latched in, otherwise the deep power-down (DP) instruction is not executed. As soon as
Chip Select (S) is driven High, it requires a delay of t before the supply current is reduced
DP
to I
and the deep power-down mode is entered.
CC2
Any deep power-down (DP) instruction, while an erase, program or write cycle is in
progress, is rejected without having any effects on the cycle that is in progress.
Figure 21. Deep power-down (DP) instruction sequence
S
tDP
0
1
2
3
4
5
6
7
C
D
Instruction
Standby mode
Deep power-down mode
AI03753D
41/58
Instructions
M25PE16
6.17
Release from deep power-down (RDP)
Once the device has entered the deep power-down mode, all instructions are ignored
except the release from deep power-down (RDP) instruction. Executing this instruction
takes the device out of the deep power-down mode.
The release from deep power-down (RDP) instruction is entered by driving Chip Select (S)
Low, followed by the instruction code on serial data input (D). Chip Select (S) must be driven
Low for the entire duration of the sequence.
The instruction sequence is shown in Figure 22.
The release from deep power-down (RDP) instruction is terminated by driving Chip Select
(S) High. Sending additional clock cycles on Serial Clock (C), while Chip Select (S) is driven
Low, cause the instruction to be rejected, and not executed.
After Chip Select (S) has been driven High, followed by a delay, t
, the device is put in the
RDP
standby mode. Chip Select (S) must remain High at least until this period is over. The device
waits to be selected, so that it can receive, decode and execute instructions.
Any release from deep power-down (RDP) instruction, while an erase, program or write
cycle is in progress, is rejected without having any effects on the cycle that is in progress.
Figure 22. Release from deep power-down (RDP) instruction sequence
S
tRDP
0
1
2
3
4
5
6
7
C
D
Instruction
High Impedance
Q
Deep power-down mode
Standby mode
AI06807
42/58
M25PE16
Power-up and power-down
7
Power-up and power-down
At power-up and power-down, the device must not be selected (that is Chip Select (S) must
follow the voltage applied on V ) until V reaches the correct value:
CC
CC
■
■
V
V
(min) at power-up, and then for a further delay of t
at power-down
CC
SS
VSL
A safe configuration is provided in Section 3: SPI modes.
To avoid data corruption and inadvertent write operations during power-up, a power on reset
(POR) circuit is included. The logic inside the device is held reset while V is less than the
CC
power on reset (POR) threshold voltage, V – all operations are disabled, and the device
WI
does not respond to any instruction.
Moreover, the device ignores all write enable (WREN), page write (PW), page program (PP),
page erase (PE), sector erase (SE), subsector erase (SSE), bulk erase (BE), write status
register (WRSR) and write to lock register (WRLR) instructions until a time delay of t
PUW
has elapsed after the moment that V rises above the V threshold. However, the correct
CC
WI
operation of the device is not guaranteed if, by this time, V is still below V (min). No
CC
CC
write, program or erase instructions should be sent until the later of:
■
■
t
t
after V passed the V threshold
CC WI
PUW
VSL
after V passed the V (min) level
CC
CC
These values are specified in Table 11.
If the delay, t
, has elapsed, after V has risen above V (min), the device can be
VSL
CC
CC
selected for read instructions even if the t
delay is not yet fully elapsed.
PUW
As an extra protection, the Reset (Reset) signal could be driven Low for the whole duration
of the power-up and power-down phases.
At power-up, the device is in the following state:
■
■
■
■
The device is in the standby mode (not the deep power-down mode).
The write enable latch (WEL) bit is reset.
The write in progress (WIP) bit is reset
The lock registers are reset (write lock bit, lock down bit) = (0, 0)
Normal precautions must be taken for supply rail decoupling, to stabilize the V supply.
CC
Each device in a system should have the V line decoupled by a suitable capacitor close to
CC
the package pins (generally, this capacitor is of the order of 100 nF).
At power-down, when V drops from the operating voltage, to below the power on reset
CC
(POR) threshold voltage, V , all operations are disabled and the device does not respond
WI
to any instruction. The designer needs to be aware that if a power-down occurs while a
write, program or erase cycle is in progress, some data corruption can result.
43/58
Power-up and power-down
M25PE16
Figure 23. Power-up timing
V
CC
V
(max)
CC
Program, erase and write commands are rejected by the device
Chip selection not allowed
V
(min)
CC
tVSL
Read access allowed
Device fully
accessible
Reset state
of the
device
V
WI
tPUW
time
AI04009C
Table 11. Power-up timing and V threshold
WI
Symbol
Parameter
Min.
Max.
Unit
(1)
tVSL
VCC(min) to S low
30
1
µs
ms
V
(1)
tPUW
Time delay before the first write, program or erase instruction
Write inhibit voltage
10
(1)
VWI
1.5
2.5
1. These parameters are characterized only, over the temperature range –40 °C to +85 °C.
44/58
M25PE16
Reset
8
Reset
Driving Reset (Reset) Low while an internal operation is in progress will affect this operation
(write, program or erase cycle) and data may be lost.
All the lock bits are reset to 0 after a Reset Low pulse.
Table 12 shows the status of the device after a Reset Low pulse.
Table 12. Device status after a Reset Low pulse
Conditions:
reset pulse occurred
Internal logic
status
Lock bits status
Addressed data
While decoding an instruction(1): WREN,
WRDI, RDID, RDSR, READ, RDLR,
Fast_Read, WRLR, PW, PP, PE, SE, BE,
SSE, DP, RDP
Reset to 0
Same as POR
Not significant
Under completion of an Erase or Program
cycle of a PW, PP, PE, SSE, SE, BE
operation
Equivalent to
POR
Addressed data
could be modified
Reset to 0
Equivalent to Write is correctly
Under completion of a WRSR operation
Reset to 0
Reset to 0
POR (after tW)
completed
Device deselected (S High) and in standby
mode
Same as POR
Not significant
1. S remains Low while Reset is Low.
9
Initial delivery state
The device is delivered with the memory array erased: all bits are set to ‘1’ (each byte
contains FFh). All usable status register bits are 0.
45/58
Maximum ratings
M25PE16
10
Maximum ratings
Stressing the device above the rating listed in the Table 13: Absolute maximum ratings may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Table 13. Absolute maximum ratings
Symbol
Parameter
Min.
Max.
Unit
TSTG
Storage temperature
–65
150
°C
TLEAD
Lead temperature during soldering
See(1)
Input and output voltage (with respect to
ground)
VIO
–0.6 VCC + 0.6
V
VCC
Supply voltage
–0.6
4.0
V
V
VESD
Electrostatic discharge voltage (human body model) (2)
–2000
2000
1. Compliant with JEDEC Std J-STD-020C (for small body, Sn-Pb or Pb assembly), the Numonyx
ECOPACK® 7191395 specification, and the European directive on Restrictions on Hazardous Substances
(RoHS) 2002/95/EU.
2. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500 Ω, R2=500 Ω).
46/58
M25PE16
DC and AC parameters
11
DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristic tables that
follow are derived from tests performed under the measurement conditions summarized in
the relevant tables. Designers should check that the operating conditions in their circuit
match the measurement conditions when relying on the quoted parameters.
Table 14. Operating conditions
Symbol
Parameter
Min.
Max.
Unit
VCC
TA
Supply voltage
Ambient operating temperature
2.7
3.6
85
V
–40
°C
Table 15. AC measurement conditions
Symbol
Parameter
Min.
Max.
Unit
CL
Load capacitance
30
pF
ns
V
Input rise and fall times
5
Input pulse voltages
0.2VCC to 0.8VCC
0.3VCC to 0.7VCC
Input and output timing reference voltages
V
1. Output Hi-Z is defined as the point where data out is no longer driven.
Figure 24. AC measurement I/O waveform
Input levels
Input and output
timing reference levels
0.8V
CC
0.7V
0.3V
CC
CC
0.2V
CC
AI00825B
(1)
Table 16. Capacitance
Symbol
Parameter
Test condition
Min.
Max.
Unit
COUT
CIN
Output capacitance (Q)
VOUT = 0 V
VIN = 0 V
8
6
pF
pF
Input capacitance (other pins)
1. Sampled only, not 100% tested, at TA=25 °C and a frequency of 33 MHz.
47/58
DC and AC parameters
M25PE16
Table 17. DC characteristics
Test condition (in addition to
Symbol
Parameter
Min.
Max.
Unit
those in Table 14)
ILI
Input leakage current
Output leakage current
± 2
± 2
µA
µA
ILO
Standby current
(standby and reset modes)
ICC1
S = VCC, VIN = VSS or VCC
S = VCC, VIN = VSS or VCC
50
10
12
µA
µA
ICC2 Deep power-down current
C = 0.1VCC / 0.9.VCC at 75 MHz,
Q = open
Operating current
ICC3
mA
(FAST_READ)
C = 0.1VCC / 0.9.VCC at 33 MHz,
Q = open
4
ICC4 Operating current (PW)
ICC5 Operating current (SE)
ICC6 Operating current (WRSR)
S = VCC
S = VCC
S = VCC
15
15
15
mA
mA
mA
V
VIL
Input low voltage
– 0.5 0.3VCC
0.7VCC VCC+0.4
0.4
VIH Input high voltage
VOL Output low voltage
VOH Output high voltage
V
IOL = 1.6 mA
V
IOH = –100 µA
VCC–0.2
V
48/58
M25PE16
DC and AC parameters
Table 18. AC characteristics (50 MHz operation)
Test conditions specified in Table 14 and Table 15
Symbol Alt.
Parameter
Min.
Typ.
Max.
Unit
Clock frequency for the following instructions:
FAST_READ, RDLR, PW, PP, WRLR, PE, SE,
SSE, DP, RDP, WREN, WRDI, RDSR, WRSR
fC
fR
fC
D.C.
50
33
MHz
Clock frequency for read instructions
D.C.
9
MHz
ns
(1)
tCH
tCLH Clock high time
tCLL Clock low time
(1)
tCL
9
ns
Clock slew rate(2) (peak to peak)
0.1
5
V/ns
ns
tSLCH
tCHSL
tDVCH
tCHDX
tCHSH
tSHCH
tSHSL
tCSS S active setup time (relative to C)
S not active hold time (relative to C)
tDSU Data in setup time
5
ns
2
ns
tDH Data in hold time
5
ns
S active hold time (relative to C)
S not active setup time (relative to C)
tCSH S deselect time
5
ns
5
ns
100
ns
(2)
tSHQZ
tCLQV
tCLQX
tDIS Output disable time
8
8
ns
tV
tHO Output hold time
Write protect setup time
Clock low to output valid
ns
0
ns
(3)
tWHSL
50
ns
(3)
tSHWL
Write protect hold time
100
ns
(2)
tDP
tRDP
tW
S to deep power-down
3
µs
(2)
S High to standby mode
30
15
23
µs
Write status register cycle time
Page write cycle time (256 bytes)
Page program cycle time (256 bytes)
Page program cycle time (n bytes)
Page erase cycle time
3
ms
ms
(4)
tPW
11
0.8
(4)
tPP
3
ms
int(n/8) × 0.025(5)
tPE
10
1
20
5
ms
s
tSE
tSSE
tBE
Sector erase cycle time
Subsector erase cycle time
Bulk erase cycle time
50
25
150
60
ms
s
1. tCH + tCL must be greater than or equal to 1/ fC.
2. Value guaranteed by characterization, not 100% tested in production.
3. Only applicable as a constraint for a WRSR instruction when SRWD is set to ‘1’.
4. When using PP and PW instructions to update consecutive bytes, optimized timings are obtained with one sequence
including all the bytes versus several sequences of only a few bytes (1 ≤ n ≤ 256).
5. int(A) corresponds to the upper integer part of A. For instance, int(12/8) = 2, int(32/8) = 4 int(15.3) =16.
49/58
DC and AC parameters
M25PE16
(1)
Table 19. AC characteristics (75 MHz operation)
Test conditions specified in Table 14 and Table 15
Symbol
Alt.
Parameter
Min.
Typ.
Max.
Unit
Clock frequency for the following instructions:
FAST_READ, RDLR, PW, PP, WRLR, PE,
SE, SSE, DP, RDP, WREN, WRDI, RDSR,
WRSR
fC
fC
D.C.
75
33
MHz
fR
Clock frequency for read instructions
Clock high time
D.C.
6
MHz
ns
(2)
tCH
tCLH
tCLL
(2)
tCL
Clock low time
6
ns
Clock slew rate(2) (peak to peak)
S active setup time (relative to C)
S not active hold time (relative to C)
Data in setup time
0.1
5
V/ns
ns
tSLCH
tCHSL
tDVCH
tCHDX
tCHSH
tSHCH
tSHSL
tCSS
5
ns
tDSU
tDH
2
ns
Data in hold time
5
ns
S active hold time (relative to C)
S not active setup time (relative to C)
S deselect time
5
ns
5
ns
tCSH
tDIS
tV
100
ns
(3)
tSHQZ
Output disable time
8
ns
tCLQV
tCLQX
Clock low to output valid under 30 pF/10 pF
Output hold time
8/6
ns
tHO
0
ns
(4)
tWHSL
Write protect setup time
20
ns
(4)
tSHWL
Write protect hold time
100
ns
(3)
tDP
S to deep power-down
3
µs
(3)
tRDP
S High to standby mode
Write status register cycle time
Page write cycle time (256 bytes)
Page program cycle time (256 bytes)
Page program cycle time (n bytes)
Page erase cycle time
30
15
23
µs
tW
3
ms
ms
(5)
tPW
11
0.8
(5)
tPP
3
ms
int(n/8) × 0.025(6)
tPE
tSE
tSSE
tBE
10
1
20
5
ms
s
Sector erase cycle time
Subsector erase cycle time
Bulk erase cycle time
50
25
150
60
ms
s
1. Delivery of parts operating with a maximum clock rate of 75 MHz starts from week 8 of 2008.
2. tCH + tCL must be greater than or equal to 1/ fC.
3. Value guaranteed by characterization, not 100% tested in production.
4. Only applicable as a constraint for a WRSR instruction when SRWD is set to ‘1’.
5. When using PP and PW instructions to update consecutive bytes, optimized timings are obtained with one sequence
including all the bytes versus several sequences of only a few bytes (1 ≤ n ≤ 256).
6. int(A) corresponds to the upper integer part of A. For instance, int(12/8) = 2, int(32/8) = 4 int(15.3) =16.
50/58
M25PE16
DC and AC parameters
Figure 25. Serial input timing
tSHSL
S
tCHSL
tSLCH
tCHSH
tSHCH
C
tDVCH
tCHCL
tCHDX
tCLCH
MSB IN
LSB IN
D
Q
High Impedance
AI01447C
Figure 26. Write protect setup and hold timing
W
tWHSL
tSHWL
S
C
D
High Impedance
Q
AI12357c
Figure 27. Output timing
S
tCH
C
tCLQV
tCLQX
tCLQV
tCL
tSHQZ
tCLQX
LSB OUT
Q
D
tQLQH
tQHQL
ADDR.LSB IN
AI01449e
51/58
DC and AC parameters
M25PE16
Table 20. Reset conditions
Test conditions specified in Table 14 and Table 15
Symbol
Alt.
Parameter
Conditions
Min.
Typ. Max. Unit
(1)
tRLRH
tRST Reset pulse width
10
µs
Chip should have been
deselected before reset is
de-asserted
Chip Select High to
Reset High
tSHRH
10
ns
1. Value guaranteed by characterization, not 100% tested in production.
(1)(2)
Table 21. Timings after a Reset Low pulse
Test conditions specified in Table 14 and Table 15
Conditions:
reset pulse occurred
Symbol Alt. Parameter
Min.
Typ.
Max.
Unit
While decoding an instruction(3)
WREN, WRDI, RDID, RDSR,
READ, RDLR, Fast_Read,
WRLR, PW, PP, PE, SE, BE,
SSE, DP, RDP
:
30
µs
Under completion of an erase or
program cycle of a PW, PP, PE,
SE, BE operation
300
µs
Reset
tRHSL tREC recovery
time
Under completion of an erase
cycle of an SSE operation
3
ms
tW (see
Table 18 or ms
Table 19)
Under completion of a WRSR
operation
Device deselected (S High) and
in standby mode
0
µs
1. All the values are guaranteed by characterization, and not 100% tested in production.
2. See Table 12 for a description of the device status after a Reset Low pulse.
3. S remains Low while Reset is Low.
Figure 28. Reset AC waveforms while a program or erase cycle is in progress
S
tSHRH
tRHSL
tRLRH
Reset
AI06808b
52/58
M25PE16
Package mechanical
12
Package mechanical
In order to meet environmental requirements, Numonyx offers these devices in ECOPACK®
packages. ECOPACK® packages are lead-free. The category of second level interconnect
is marked on the package and on the inner box label, in compliance with JEDEC Standard
JESD97. The maximum ratings related to soldering conditions are also marked on the inner
box label.
Figure 29. VFQFPN8 (MLP8) 8-lead very thin dual flat package no lead, 6 × 5 mm,
package outline
A
D
aaa C A
R1
D1
B
E
E1
E2
A2
e
b
2x
0.10 C
B
D2
0.10 C
A
θ
L
ddd
C
A
A1 A3
70-ME
1. Drawing is not to scale.
2. The circle in the top view of the package indicates the position of pin 1.
53/58
Package mechanical
M25PE16
Table 22. VFQFPN8 (MLP8) 8-lead very thin fine pitch quad flat package no lead,
6 × 5 mm, package mechanical data
millimeters
inches
Min
Symbol
Typ
Min
Max
Typ
Max
A
A1
A2
A3
b
0.85
0.80
0.00
1.00
0.05
0.033
0.031
0.000
0.039
0.002
0.65
0.20
0.40
6.00
5.75
3.40
5.00
4.75
4.00
1.27
0.10
0.60
0.026
0.008
0.016
0.236
0.226
0.134
0.197
0.187
0.157
0.050
0.004
0.024
0.35
3.20
0.48
3.60
0.014
0.126
0.019
0.142
D
D1
D2
E
E1
E2
e
3.80
–
4.30
–
0.150
–
0.169
–
R1
L
0.00
0.50
0.000
0.020
0.75
12°
0.029
12°
Θ
aaa
bbb
ddd
0.15
0.10
0.05
0.006
0.004
0.002
54/58
M25PE16
Package mechanical
Figure 30. SO8 wide – 8 lead plastic small outline, 208 mils body width, package
outline
A2
A
c
b
CP
e
D
N
1
E E1
A1
k
L
6L_ME
1. Drawing is not to scale.
2. The circle in the top view of the package indicates the position of pin 1.
Table 23. SO8 wide – 8 lead plastic small outline, 208 mils body width, mechanical
data
millimeters
Min
inches
Min
Symbol
Typ
Max
Typ
Max
A
A1
A2
b
2.50
0.25
2.00
0.51
0.35
0.10
6.05
6.22
8.89
–
0.098
0.010
0.079
0.020
0.014
0.004
0.238
0.245
0.350
–
0.00
1.51
0.35
0.10
0.000
0.059
0.014
0.004
0.40
0.20
0.016
0.008
c
CP
D
E
5.02
7.62
–
0.198
0.300
–
E1
e
1.27
0.050
k
0°
10°
0°
10°
L
0.50
8
0.80
0.020
8
0.031
N
55/58
Ordering information
M25PE16
13
Ordering information
Table 24. Ordering information scheme
Example:
M25PE16
–
V
MP 6
T
P
Device type
M25PE = page-erasable serial Flash memory
Device function
16 = 16 Mbit (2 Mbit x 8)
Operating voltage
V = VCC = 2.7 V to 3.6 V
Package
MW = SO8 (208 mils width)
MP = VFQFPN8 6 x 5 mm (MLP8)
Device grade
6 = industrial: device tested with standard test flow over –40 to 85 °C
Option
blank = standard packing
T = tape and reel packing
Plating technology
P or G = ECOPACK® (RoHs compliant)
For a list of available options (speed, package, etc.) or for further information on any aspect
of this device, please contact your nearest Numonyx Sales Office.
56/58
M25PE16
Revision history
14
Revision history
Table 25. Document revision history
Date
Revision
Changes
16-Feb-2006
0.1
Initial release.
Figure 3: Bus master and memory devices on the SPI bus updated
and Note 2 added.
Section 4.8.1: Protocol-related protections clarified.
Address range for subsector 15 of sector 0 modified in Table 4:
Memory organization.
RESET signal behavior clarified in Section 6.5: Write status register
(WRSR), Section 6.9: Page write (PW), Section 6.10: Page program
(PP), Section 6.12: Page erase (PE), Section 6.14: Subsector erase
(SSE), Section 6.15: Bulk erase (BE).
07-Aug-2006
1
Section 8: Reset added to describe the device status after a RESET
Low pulse. Table Reset while a Read, Program or Erase cycle is in
progres replaced by Table 21: Timings after a Reset Low pulse
Table 19 split into two tables (see also Table 20). tBE typical value
updated. Small text changes.
HPM2 specified in HPM1 and HPM2 paragraph. Small text changes.
Table 12: Device status after a Reset Low pulse modified.
VIO max. modified in Table 13: Absolute maximum ratings.
13-Oct-2006
20-Nov-2006
2
3
fR, tW, tPW, tPP and tSSE modified in Table 18: AC characteristics
(50 MHz operation).
TSL/W signal renamed as W, Top Sector Lock functionality removed,
HPM2 removed.
Paragraph added in Section 3: SPI modes. TLEAD added to Table 13:
Absolute maximum ratings. tTHSL and tSHTL timings removed from
Table 18: AC characteristics (50 MHz operation) and Figure 26:
Write protect setup and hold timing. SO8W package specifications
updated (see Table 23 and Figure 30).
Document status promoted from preliminary data to datasheet. VCC
supply voltage and VSS ground added. Figure 3: Bus master and
memory devices on the SPI bus updated, Note 2 removed and
replaced by an explanatory paragraph.
12-Apr-2007
4
Behavior of WIP bit and lock registers specified at power-up in
Section 7: Power-up and power-down.
VFQFPN8 package specifications updated (see Figure 29 and
Table 22).
Removed ‘low voltage’ from the title.
Updated the value for the maximum clock frequency (from 50 to
75 MHz) through the document.
25-Mar-2008
01-Apr-2008
5
6
Added: Table 19: AC characteristics (75 MHz operation) and
ECOPACK® text in Section 12: Package mechanical.
Modified: Section 3: SPI modes and Table 17: DC characteristics.
Minor text changes.
Applied Numonyx branding.
57/58
M25PE16
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58/58
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