NTE97 [NTE]
Silicon NPN Transistor HV Darlington Power Amp, Switch; 硅NPN晶体管高压达林顿功放，开关
| 型号： | NTE97 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon NPN Transistor HV Darlington Power Amp, Switch |
| 文件： | 总3页 (文件大小：31K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE97
Silicon NPN Transistor
HV Darlington Power Amp, Switch
Description:
The NTE97 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage,
high–speed, power switching in inductive circuits where fall–time is critical. They are particularly
suited for line operated switch–mode applications.
Applications:
D Switching Regulators
D Inverters
D Solenoid and Relay Drivers
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Collector–Emitter Voltage, VCEX(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V
Collector–Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Base Current, IB
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.86W/°C
Total Power Dissipation (TC = +100°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.17°C/W
Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . . . . . . . . . . +275°C
Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle ≤ 10%.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics (Note 2)
Collector–Emitter Sustaining Voltage
V
I = 250mA, I = 0, V
= 400V
400
450
325
–
–
–
–
–
–
–
–
–
–
–
V
V
V
CEO(sus)
C
B
clamp
clamp
clamp
V
I = 1A, V
C
= 450V, T = +100°C
C
CEX(sus)
I = 5A, V
C
= 450V, T = +100°C
C
Collector Cutoff Current
I
V
V
V
V
= 500V, V
= 500V, V
= 1.5V
0.25 mA
5.0 mA
5.0 mA
175 mA
CEV
CEV
CEV
CEV
BE(off)
BE(off)
= 1.5V, T = +100°C
–
C
I
= 500V, R = 50Ω, T = +100°C
–
CER
BE
C
Emitter Cutoff Current
ON Characteristics (Note 3)
DC Current Gain
I
= 8V, I = 0
–
EBO
EB
C
h
FE
V
V
= 5V, I = 2.5A
40
30
–
–
–
–
–
–
–
–
3
500
300
CE
C
= 5V, I = 5A
CE
C
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
V
I = 5A, I = 250mA
1.9
2.0
2.9
2.5
2.5
5
V
V
V
V
V
V
CE(sat)
C
B
I = 5A, I = 250mA, T = +100°C
–
C
B
C
I = 10A, I = 1A
–
C
B
V
I = 5.2A, I = 250mA
–
BE(sat)
C
B
I = 5A, I = 250mA, T = +100°C
–
C
B
C
Diode Forward Voltage
Dynamic Characteristics
Small–Signal Current Gain
Output Capacitance
V
F
I = 5A, Note 3
F
–
h
fe
V
V
= 10V, I = 1A, f = 1MHz
10
60
–
–
–
CE
C
test
C
ob
= 50V, I = 0, f = 100kHz
275 pF
CB
E
test
Switching Characteristics (Resistive Load)
Delay Time
Rise Time
Storage Time
Fall Time
t
–
–
–
–
0.05 0.2
0.25 0.6
1.2 3.0
0.6 1.5
µs
µs
µs
µs
V
V
= 250V, I = 5A, I = 250mA,
C B1
d
CC
= 5V, t = 50µs, Duty Cycle ≤ 2%
BE(off)
p
t
r
t
s
t
f
Switching Characteristics (Inductive Load, Clamped)
Storage Time
Crossover Time
Storage Time
Crossover Time
t
–
–
–
–
2.1 5.0
1.3 3.3
µs
µs
µs
µs
I = 5A Peak, V
= 450V, I = 250mA,
B1
sv
C
V
clamp
= 5V, T = +100°C
BE(off)
C
t
c
t
sv
0.92
0.5
–
–
I = 5A Peak, V
= 450V, I = 250mA,
B1
C
clamp
V
= 5V, T = +25°C
BE(off)
C
t
c
Note 2. Pulse test: Pulse Width = 300µs, Duty Cycle ≤ 2%.
Note 3. The internal Collector–Emitter diode can eliminate the need for an external diode to clamp
inductive loads. Tests have shown that the Forward Recovery Voltage (VF) of this diode is
comparable to that of typical fast recovery rectifiers.
C
B
E
.135 (3.45) Max
.875 (22.2)
.350 (8.89)
Dia Max
Seating
Plane
.312 (7.93) Min
Emitter
.040 (1.02)
1.187 (30.16)
.665
(16.9)
.215 (5.45)
.156 (3.96) Dia
(2 Holes)
.430
(10.92)
.188 (4.8) R Max
.525 (13.35) R Max
Collector/Case
Base
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