NTE5468 [NTE]
Silicon Controlled Rectifier (SCR) 10 Amp; 可控硅整流器（ SCR） 10安培
| 型号： | NTE5468 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon Controlled Rectifier (SCR) 10 Amp |
| 文件： | 总2页 (文件大小：24K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE5461 thru NTE5468
Silicon Controlled Rectifier (SCR)
10 Amp
Description:
The NTE5461 through NTE5468 series silicon controlled rectifiers are designed primarily for half–
wave AC control applications such as motor controls, heating controls, and power supplies; or wher-
ever half–wave silicon gate–controlled, solid–state devices are needed. These devices are supplied
in a TO220 type package.
Features;
D Glass Passivated Junctions and Center Gate Fire for Greater Parameter Uniformity and Stability
D Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation,
and Durability
D Blocking Voltage to 800 Volts
Absolute Maximum Ratings:
Peak Repetitive Reverse Voltage; Peak Repetitive Off–State Voltage (Note 1), VRRM, VDRM
NTE5461 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
NTE5462 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
NTE5463 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5465 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5466 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
NTE5468 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Non–Repetitive Peak Reverse Voltage; Non–Repetitive Off–State Voltage, VRSM, VDSM
NTE5461 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
NTE5462 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125V
NTE5463 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V
NTE5465 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
NTE5466 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
NTE5468 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
RMS Forward Current (All Conducting Angles, TC = +75°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . 10A
Peak Forward Surge Current (1 Cycle, Sine Wave, 60Hz, TC = +80°C), ITSM . . . . . . . . . . . . . . 100A
Circuit Fusing Considerations (TJ = –65° to +100°C, t = 1 to 8.3ms), I2t . . . . . . . . . . . . . . . . . 40A2s
Forward Peak gate Power (t ≤ 10µs), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16W
Forward Average Gate Power, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2°C/W
Note 1. VDRM and VRRM for all types can be applied on a continuous DC basis without incurring dam-
age. Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias
applied to the gate concurrently with a negative potential on the anode.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
or V T = +25°C
Min Typ Max Unit
Rated V
–
–
–
–
–
10
2
µA
mA
V
Peak Forward or Reverse Blocking
Current
I
,
DRM
RRM
C
DRM
I
RRM
T = +100°C
C
Instantaneous On–State Voltage
V
T
I
= 30A , Pulse Width ≤ 1ms,
(Peak)
1.7
2.0
TM
Duty Cycle ≤ 2%
Gate Trigger Current (Continuous DC)
Gate Trigger Voltage (Continuous DC)
Holding Current
I
V = 12V, R = 30Ω
–
–
–
–
–
8
15
1.5
20
–
mA
V
GT
D
L
V
V = 12V, R = 30Ω
0.9
10
1.6
25
GT
D
L
I
Gate Open, V = 12V, I = 150mA
mA
µs
µs
H
D
T
Gate Controlled Turn–On Time
Circuit Commutated Turn–Off Time
t
V = Rated V
, I = 2A, I = 80mA
DRM TM GR
gt
D
t
q
V = V , I = 2A, Pulse Width = 50µs,
D DRM TM
–
dv/dt = 200V/µs, di/dt = 10A/µs,
T = +75°C
C
Critical Rate–of–Rise of Off–State
dv/dt V = Rated V
, Exponential Rise,
–
100
–
V/µs
D
DRM
Voltage
T = +100°C
C
.420 (10.67)
Max
.110 (2.79)
Anode
.147 (3.75)
Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Cathode
Gate
Anode
.100 (2.54)
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