NTE3017 [NTE]
Infrared Emitting Diode High Speed for Remote Control; 红外发光二极管的高速远程控制
| 型号： | NTE3017 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Infrared Emitting Diode High Speed for Remote Control |
| 文件： | 总2页 (文件大小：23K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE3017
Infrared Emitting Diode
High Speed for Remote Control
Description:
The NTE3017 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a
clear, blue–grey tinted plastic package.
Features:
D Low Forward Voltage
D High Radiant Power and Radiant Intensity
D Suitable for DC and High Pulse Current Operation
D High Reliability
D Standard T–1 3/4 (5mm) Package
Applications:
Infrared remote control and free air transmission systems with low forward voltage and comfort-
able radiation and angle requirements in combination with PIN photodiodes or phototransistors.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Forward Current, IF
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA
Surge Forward Current (Note 2), IFSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A
Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 210mW
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +100°C
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +100°C
Lead Soldering Temperature (t ≤ 5sec, 2mm from case), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . +260°C
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375K/W
Note 1. tp = 100µs, tp/T = 0.5
Note 2. tp = 100µs
Electrical Characteristics: (TA = +25°C unless otherwis specified)
Parameter
Symbol
Test Conditions
I = 100mA, t = 20ms
Min Typ Max Unit
Forward Voltage
V
F
–
–
–
–
–
7
1.3 1.7
2.2 3.4
V
V
F
p
I = 1.5A, t = 100µs
F
p
Temperature Coefficient of Forward Voltage
Reverse Current
I = 100mA
F
–1.3
–
–
100
–
mV/°C
µA
I
R
V = 5V
R
Junction Capacitance
C
j
V = 0, f = 1MHz, E = 0
R
30
14
pF
Radient Intensity
I
e
I = 100mA, t = 20ms
–
mW/sr
mW/sr
deg
mW
%/°C
nm
F
p
I = 1.5A, t = 100µs
60 140
–
F
p
Angle of Half Intensity
Φ
–
–
–
–
–
–
–
–
–
–
±22
13
–
Radient Power
Φ
I = 100mA, t = 20ms
–
e
F
p
Temperature Coefficient of Radient Intensity
Peak Wavelength
I = 20mA
F
–0.8
950
0.2
–
λ
I = 100mA
F
–
p
Temperature Coefficient of Peak Wavelength
Spectral Bandwidth
I = 100mA
F
–
nm/°C
nm
∆λ
I = 100mA
F
50
–
Rise Time
t
r
I = 100mA
F
800
400
800
400
–
ns
I = 1.5A
F
–
ns
Fall Time
t
f
I = 100mA
F
–
ns
I = 1.5A
F
–
ns
Flat Denotes
Cathode
.230
(5.84)
Dia
.100 (2.54)
.200 (5.08) Dia
.100 (2.54) R
Seating Plane
.340
(8.63)
.040
(1.01)
.100 (2.54)
.750
(19.05)
Min
.050 (1.27) Typ
.025 (0.63) Max Sq
.050 (1.27)
.100 (2.54)
Tolerance ±.010 (.254)
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