NTE2580 [NTE]

Silicon NPN Transistor High Voltage, High Current Switch; 硅NPN晶体管高电压，高电流开关


型号：	NTE2580
厂家：	NTE ELECTRONICS
描述：	Silicon NPN Transistor High Voltage, High Current Switch 硅NPN晶体管高电压，高电流开关晶体开关晶体管功率双极晶体管
文件：	总2页 (文件大小：26K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

NTE2580

Silicon NPN Transistor

High Voltage, High Current Switch

Features:

D High Breakdown Voltage, High Reliability

D Fast Switching Speed

D Wide ASO Range

Absolute Maximum Ratings: (T_A= +25°C unless otherwise specified)

Collector–Base Voltage, V_CBO. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V

Collector–Emitter Voltage, V_CEO. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V

Emitter–Base Voltage, V_EBO. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V

Collector Current, I_C

Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A

Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A

Base Current, I_B. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A

Collector Power Dissipation, P_C

T_A= +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.65W

T_C= +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W

Operating Junction Temperature, T_J. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Storage Temperature Range, T_stg. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Note 1. Pulse Test: Pulsed Width ≤ 300µs, Duty Cycle ≤ 10%.

Electrical Characteristics: (T_A= +25°C unless otherwise specified)

Parameter

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Symbol

I_CBO

Test Conditions

V_CB= 400V, I_E= 0

Min Typ Max Unit

–

µA

I_EBO

V_EB= 5V, I_C= 0

h_FE

V_CE= 5V, I_C= 800mA

V_CE= 5V, I_C= 4A

–

V_CE= 5V, I_C= 10mA

V_CE= 10V, I_C= 800mA

V_CB= 10V, f = 1MHz

–

Gain–Bandwidth Product

Output Capacitance

f_T

–

MHz

C_ob

–

Collector Emitter Saturation Voltage

V_CE(sat)I_C= 4A, I_B= 800mA

–

0.8

Electrical Characteristics (Cont’d): (T_A= +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Base Emitter Saturation Voltage

V_BE(sat)I_C= 4A, I_B= 800mA

–

1.5

–

Collector Base Breakdown Voltage V_(BR)CBOI_C= 1mA, I_E= 0

500

400

Collector Emitter Breakdown Voltage V_(BR)CEOI_C= 5mA, R_BE= ∞

–

Emitter Base Breakdown Voltage

V_(BR)EBOI_E= 1mA, I_C= 0

–

Collector Emitter Sustaining Voltage V_CEX(sus)I_C= 3A, I_B1= –0.3A, L = 1mH, 400

_B2= –1.2A, Clamped

–

Turn–On Time

Storage Time

Fall Time

t_on

t_stg

t_f

–

0.5

2.5

0.3

–

µs

V_CC= 200V, I_C= 5A,

I_B1= 1A, I_B2= – 2A,

R_L= 40Ω

.177 (4.5)

.051 (1.3)

.402 (10.2)

.035

(0.9)

.346

(8.8)

.433

(11.0)

.019 (0.5)

.100 (2.54)

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