LMH6628J-QML [NSC]
DUAL WIDEBAND, LOW-NOISE, VOLTAGE FEEDBACK OP AMP, GUARANTEED TO 300k rd (si) TESTED TO MIL-STD-883, METHOD 1019; 双宽带，低噪声，电压反馈运算放大器，保证30万次（SI）的测试，符合MIL -STD -883方法1019
| 型号： | LMH6628J-QML |
| 厂家： | 
National Semiconductor |
| 描述： | DUAL WIDEBAND, LOW-NOISE, VOLTAGE FEEDBACK OP AMP, GUARANTEED TO 300k rd (si) TESTED TO MIL-STD-883, METHOD 1019 |
| 文件： | 总12页 (文件大小：180K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MICROCIRCUIT DATA SHEET
Original Creation Date: 04/29/03
Last Update Date: 05/13/03
Last Major Revision Date:
MNLMH6628-X-RH REV 0A0
DUAL WIDEBAND, LOW-NOISE, VOLTAGE FEEDBACK OP AMP,
GUARANTEED TO 300k rd(Si) TESTED TO MIL-STD-883,
METHOD 1019
General Description
The National LMH6628 is a high speed dual op amp that offers a traditional voltage
feedback topology featuring unity-gain stability and slew-enhanced circuitry. The
LMH6628's low noise and very low harmonic distortion combine to form a very wide dynamic
range op amp that operates from a single (5 to 12V) or dual (+5V) power supply.
Each of the LMH6628's closely matched channels provides a 300MHz unity gain bandwidth and
low input voltage noise density (2nV/SqRtHz). Low 2nd/3rd harmonic distortion (-65/-74dBc
at 10MHz) makes the LMH6628 a perfect wide dynamic-range amplifier for matched I/Q
channels.
With its fast and accurate settling (12ns to 0.1%), the LMH6628 is also an excellent
choice for wide dynamic range, anti-aliasing filters to buffer the inputs of hi resolution
analog-to-digital converters. Combining the LMH6628's two tightly matched amplifiers in a
single package reduces cost and board space for many composite amplifier applications such
as active filters, differential line drivers/receivers, fast peak detectors and
instrumentation amplifiers.
The LMH6628 is fabricated using National's VIP 10 (TM) comlimentary bipolar process.
Industry Part Number
NS Part Numbers
LMH6628
LMH6628J-QML
LMH6628J-QMLV
LMH6628JFQML
LMH6628JFQMLV
LMH6628WG-QML
LMH6628WG-QMLV
LMH6628WGFQML
LMH6628WGFQMLV
Prime Die
LMH6628A
Controlling Document
SEE FEATURES SECTION
Processing
Subgrp Description
Temp (oC)
MIL-STD-883, Method 5004
1
Static tests at
+25
2
Static tests at
+125
-55
3
Static tests at
4
Dynamic tests at
Dynamic tests at
Dynamic tests at
Functional tests at
Functional tests at
Functional tests at
Switching tests at
Switching tests at
Switching tests at
+25
Quality Conformance Inspection
5
+125
-55
6
MIL-STD-883, Method 5005
7
+25
8A
8B
9
+125
-55
+25
10
11
+125
-55
1
MICROCIRCUIT DATA SHEET
MNLMH6628-X-RH REV 0A0
Features
- Wide unity-gain bandwidth: 300 MHz
- Low noise: 2.0nV/SqRtHz
- Low distortion: -65/-74dBc (10MHz)
- Settling time: 12ns to 0.1%
- Wide supply voltage range: +2.5V to +6V
- High output current +85mA
- Improved replacement for CLC428
CONTROLLING DOCUMENTS:
LMH6628J-QML
LMH6628J-QMLV
LMH6628JFQML
LMH6628JFQMLV
LMH6628WG-QML
LMH6628WG-QMLV
LMH6628WGFQML
LMH6628WGFQMLV
5962-0254501MPA
5962-0254501VPA
5962F0254501MPA
5962F0254501VPA
5962-0254501MZA
5962-0254501VZA
5962F0254501MZA
5962F0254501VZA
Applications
- High speed dual op amp
- Low noise integrators
- Low noise active filters
- Driver/receiver for transmission systems
- High-speed detectors
- I/Q channel amplifiers
2
MICROCIRCUIT DATA SHEET
MNLMH6628-X-RH REV 0A0
(Absolute Maximum Ratings)
(Note 1)
Supply Voltage
+7V dc
Maximum Junction temperature
(Note 2)
+175 C
+300 C
V+ - V-
V+ - V-
Lead temperature
Soldering, 10 seconds
Differential input voltage
Common mode input voltage
Storage temperature range
-65 C < Ta < +150 C
1.0W
Power Dissipation
(Note 2)
Short circuit current
(Note 3)
Thermal Resistance
ThetaJA
Ceramic DIP
(Still Air)
135 C/W
75 C/W
200 C/W
145 C/W
(500LF/Min Air Flow)
(Still Air)
Ceramic SOIC
(500LF/Min Air Flow)
ThetaJC
Ceramic DIP
Ceramic SOIC
30 C/W
19 C/W
Package Weight
(typical)
Ceramic DIP
Ceramic SOIC
TBD
TBD
ESD Tolerance
(Note 4)
4000V
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
Operating Ratings indicate conditions for which the device is intended to be
functional, but do not guarantee specific performance limits. For guaranteed
specifications and test conditions, see the Electrical Characteristics. The
guaranteed specifications apply only for the test conditions listed. Some performance
characteristics may degrade when the device is not operated under the listed test
conditions.
Note 2: The maximum power dissipation must be derated at elevated temperatures and is
dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to
ambient thermal resistance), and TA (ambient temperatuer). The maximum allowable
power dissipation at any temperatuer is Pdmax = (Tjmax -TA) / ThetaJA or the number
given in the Absoulute Maximum Ratings, whichever is lower.
Note 3: Output is short circuit protected to ground, however maximum reliability is obtained
if output current does not exceed 160mA.
Note 4: Human body model, 1.5k Ohms in series with 100pF.
3
MICROCIRCUIT DATA SHEET
MNLMH6628-X-RH REV 0A0
Recommended Operating Conditions
Supply Voltage
+2.5V to +6.0V
-55 C < Ta < +125 C
Ambient Operating Temperture Range
4
MICROCIRCUIT DATA SHEET
MNLMH6628-X-RH REV 0A0
Electrical Characteristics
DC PARAMETERS: Static and DC Tests
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: Vcc = +5V dc, Av = +2, Rl = 100 Ohms, Rf = 100 Ohms, -55 C < Ta < +125 C
PIN-
NAME
SUB-
SYMBOL
PARAMETER
CONDITIONS
NOTES
MIN
-10
MAX UNIT
GROUPS
Ib
Input Bias
Current
3
+10
uA
uA
uA
mV
mV
mA
mA
mA
dB
dB
V
1
-20
-20
-2
+20
+20
+2
2
3
Vio
Icc
Input Offset
Voltage
3
3
1
-2.6
+2.6
24
2, 3
Supply Current
Rl = infinity
1
24
2
25
3
PSRR
Vout
Power Supply
Rejection Ration -5.0V
+Vs = +4.0V to +5.0v, -Vs = -4.0V to
60
1
55
2, 3
Output Voltage
Range
Rl = Infinity
-5.0
+5.0
1, 2,
3
AC PARAMETERS: Frequeuncy Domain Response
(The following conditions apply to all the following parameters, unless otherwise specified.)
AC: Vcc = +5V dc, Av = +2, Rl = 100 Ohms, Rf = 100 Ohms, -55 C < Ta < +125 C
SSBW
GFP
GFR
Aol
Small Signal
Bandwith
-3 dB bandwidth, Vout < 0.5 Vpp
0.1 MHz to 200 MHz, Vout <0.5 Vpp
0.1 MHz to 20 MHz, Vout <0.5 Vpp
2
2
2
2
50
MHz 4
Gain Flatness
Peaking
0.6
0.6
dB
dB
dB
4
4
4
Gain Flatness
Rolloff
Open Loop Gain
55
AC PARAMETERS: Distortion and Noise Tests.
(The following conditions apply to all the following parameters, unless otherwise specified.)
AC: Vcc = +5V dc, Av = +2, Rl = 100 Ohms, Rf = 100 Ohms, -55 C < Ta < +125 C
HD2
Second Harmonic
Distortion
1 Vpp at 10 MHz
2
50
dBc 4
dBc 4
HD3
Third Harmonic
Distortion
1 Vpp at 10 MHz
2
60
5
MICROCIRCUIT DATA SHEET
MNLMH6628-X-RH REV 0A0
Electrical Characteristics
DC PARAMETERS: DRIFT VALUES
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: " Deltas not required on B-Level product. Deltas required for S-Level product at Group B5 ONLY, or as
specified on the Internal Processing Instructions (IPI).
PIN-
NAME
SUB-
GROUPS
SYMBOL
PARAMETER
CONDITIONS
NOTES
MIN
MAX UNIT
Ib
Input Bias
1
-1.0
+1.0
uA
mV
mA
1
Current
Vio
Icc
Input Offset
Voltage
1
1
-0.2
-1
+0.2
+1
1
1
Supply Current
Rl = Infinity
Note 1: If not tested, shall be guaranteed to the limits specified in table 1.
Note 2: Group A testing only.
Note 3: Pre and post irradiation limits are identical to those listed under electrical
characteristics. These parts may be dose rate sensitive in a space environment and
demonstrate enhanced low dose rate effect. Radiation end point limits for the noted
parameters are guaranteed only for the conditions as specified in MIL-STD-883, Method
1019.
6
MICROCIRCUIT DATA SHEET
MNLMH6628-X-RH REV 0A0
Graphics and Diagrams
GRAPHICS#
DESCRIPTION
CERAMIC SOIC (WG), 10 LEAD (B/I CKT)
06403HRA1
07082HRA4
J08ARL
CERDIP (J), 8 LEAD (B/I CKT)
CERDIP (J), 8 LEAD (P/P DWG)
CERDIP (J), 8 LEAD (PIN OUT)
P000480A
P000484A
WG10ARC
CERAMIC SOIC (WG), 10 LEAD (PIN OUT)
CERAMIC SOIC (WG), 10 LEAD (P/P DWG)
See attached graphics following this page.
7
V
V
+V
V
1
2
3
4
8
7
6
5
OUT1
CC
INV1
OUT2
V
V
INV2
NON-INV1
V
-V
NON-INV2
CC
LMH6628J
8 - LEAD DIP
CONNECTION DIAGRAM
TOP VIEW
P000480A
MIL/AEROSPACE OPERATIONS
2900 SEMICONDUCTOR DRIVE
SANTA CLARA, CA 95050
V
1
2
3
10
9
+V
V
OUT1
CC
V
INV1
OUT2
8
V
V
V
INV2
NON-INV1
4
5
7
6
-V
CC
NON-INV2
N/C
N/C
LMH6628WG
10 - LEAD CERAMIC SOIC
CONNECTION DIAGRAM
TOP VIEW
P000484A
MIL/AEROSPACE OPERATIONS
2900 SEMICONDUCTOR DRIVE
SANTA CLARA, CA 95050
MICROCIRCUIT DATA SHEET
MNLMH6628-X-RH REV 0A0
Revision History
Rev ECN # Rel Date Originator Changes
0A0
M0004149 05/13/03
Rose Malone
Initial MDS Release: MNLMH6628-X-RH, Rev. 0A0
8
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