LME49990 [NSC]
Ultra-low Distortion, Ultra-low Noise Operational Amplifier; 超低失真，超低噪声运算放大器
| 型号： | LME49990 |
| 厂家： | 
National Semiconductor |
| 描述： | Ultra-low Distortion, Ultra-low Noise Operational Amplifier |
| 文件： | 总16页 (文件大小：437K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
January 8, 2010
LME49990 Overture®
E-Series
Ultra-low Distortion, Ultra-low Noise Operational Amplifier
General Description
Key Specifications
The LME49990 is part of the ultra-low distortion, low noise,
high slew rate operational amplifier series optimized and fully
specified for high performance, high fidelity applications. The
LME49990 combines low voltage noise density (0.9nV/√Hz)
with vanishing low THD+N (0.00001%). The LME49990 has
a high slew rate of ±22V/μs and an output current capability
of ±27mA. It drives 600Ω loads to within 2V of either power
supply voltage.
■ꢀInput Noise Density (f = 1kHz)
0.9nV/√Hz (typ)
1.3nV/√Hz (max)
■ꢀTHD+N
(AV = 1, VOUT = 3VRMS, fIN = 1kHz)
RL = 600Ω
0.00001%
43Hz (typ)
■ꢀ1/f Corner Frequency
■ꢀSlew Rate
The LME49990’s outstanding Gain (135dB), CMRR (137dB),
PSRR (144dB), and VOS (130μV) give the amplifier excellent
operational amplifier DC performance. The LME49990 has a
wide supply range of ±5V to ±18V. The LME49990 is unity
gain stable and is available in an 8-lead narrow body SOIC.
±22V/μs (max)
■ꢀGain Bandwidth
(AV = 104, RL = 2kΩ, f = 90kHz)
110MHz (typ)
144dB (typ)
137dB (typ)
±5V to ±18V
■ꢀPSRR
■ꢀCMRR
■ꢀPower Supply Voltage Range
Features
Easily drives 600Ω load
Output short circuit protection
■
■
Applications
Ultra high quality audio signal processing
■
■
■
■
■
■
Active Filters
Preamplifiers
Spectrum analyzers
Ultrasound preamplifiers
Sigma-Delta ADC/DAC buffers
300597e6
300597d7
FIGURE 1. Voltage Noise Spectral Density
FIGURE 2. THD+N vs Frequency
Overture® is a registered trademark of National Semiconductor.
© 2010 National Semiconductor Corporation
300597
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Connection Diagram
30059702
Order Number LME49990MA
See NS Package Number — M08A
Ordering Information
Order Number
LME49990MA
LME49990MAX
Package
Package DWG #
M08A
Transport Media
MSL Level
8 Ld SOIC
8 Ld SOIC
95 units in reel
1
1
M08A
2500 units in tape and reel
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2
ESD Rating (Note 8)
Junction Temperature
Thermal Resistance
ꢁθJA (SO)
Soldering Information
Infrared or Convection (20 sec)
1000V
150°C
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
145°C/W
260°C
Power Supply Voltage
(VS = V+ - V-)
38V
−65°C to 150°C
(V-) - 0.3V to (V+) + 0.3V
Continuous
Storage Temperature
Input Voltage
Output Short Circuit (Note 3)
Power Dissipation
ESD Rating (Note 4)
ESD Rating (Note 5)
Operating Ratings (Note 1)
Temperature Range
Internally Limited
2000V
TMIN ≤ TA ≤ TMAX
Supply Voltage Range
–40°C ≤ TA ≤ 85°C
±5V ≤ VS ≤ ±18V
200V
Electrical Characteristics (Note 2)
The following specifications apply for VS = ±15V, RL = 2kΩ, fIN = 1kHz, and TA = 25°C, unless otherwise specified.
LME49990
Units
(Limits)
Symbol
Parameter
Conditions
Typical
Limit
(Note 6)
(Note 7)
POWER SUPPLY
±5
±18
V (min)
V (max)
VCC
Operating Supply Voltage
VCM = 0V, VO = 0V, IO = 0mA
VCC = ±5V
8
9
9
10
11
12
ICCQ
Quiescent Current
mA (max)
VCC = ±15V
VCC = ±18V
VCC = ±5V to ±18V
TMIN−TMAX
144
137
119
116
dB (min)
dB (min)
PSRR
Power Supply Rejection Ratio
DYNAMIC PERFORMANCE
AV = 1, VO = 3VRMS, RL= 1kΩ
f = 1kHz
f = 20kHz
THD+N
Total Harmonic Distortion + Noise
0.00002
0.00001
0.00003
% (max)
%
AV = 1, VO = 3VRMS
IMD
Intermodulation Distortion
Two-tone 60Hz & 7kHz 4:1
0.000017
110
%
GBWP
FPBW
Gain Bandwith Product
Full Power Bandwidth
AV = 104, RL = 2kΩ, f = 90kHz
MHz
AV = –1, VO = 20VPP, RL = 1kΩ
AV = –1, VO = 20VPP
RL = 1kΩ
291
kHz
V/μs (min)
ns
SR
ts
Slew Rate
22
16.5
AV = –1, VO = 10VPP, RL = 1kΩ
0.01%
Settling time
590
VO = ±10V
135
124
120
120
dB (min)
dB
RL = 2kΩ
TMIN – TMAX
AVOL
Open-Loop Gain
130
122
dB (min)
dB
RL = 600Ω
TMIN – TMAX
3
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LME49990
Units
(Limits)
Symbol
NOISE
Parameter
Conditions
Typical
Limit
(Note 6)
(Note 7)
f = 10Hz
f = 100Hz
f = 1kHz
f = 10kHz
1.4
1.0
ꢀnV/√Hz
ꢀnV/√Hz
ꢀnV/√Hz (max)
eN
Input Noise Voltage Density
0.88
0.88
1.3
ꢀnV/√Hz
nVPP
BW = 0.1Hz to 10Hz (Note 4)
BW = 10Hz to 20kHz
BW = 10Hz to 1MHz
30
0.12
1
V_NOISE
iN
RMS Voltage Noise
μV (max)
μV (max)
0.2
1.2
Input Current Noise Density
f = 1kHz
2.8
ꢀpA/√Hz
INPUT CHARACTERISTICS
VCC = ±18V, VCM = 0v, VO = 0V
VCC = ±18V, TMIN − TMAX
μV (max)
μV (max)
130
300
1000
2000
VOS
Offset Voltage
Input Offset Voltage Drift vs
VOS Drift
IBIAS
VCC = ±18V, TMIN − TMAX
2
μV/°C
Temperature (ΔVOS/ΔTemp)
VCC = ±18V, VCM = 0v, VO = 0V
VCC = ±18V, TMIN − T MAX
30
150
500
1000
nA (max)
nA (max)
Input Bias Current
VCC = ±18V, VCM = 0v, VO = 0V
VCC = ±18V, TMIN − TMAX
35
95
400
1000
nA (max)
nA (max)
IOS
Input Offset Current
VIN-CM
CMRR
Common-Mode Input Voltage Range
Common-Mode Rejection
12
11
V (min)
–10V<VCM<10V
TMIN − TMAX
137
132
118
110
dB (min)
dB (min)
OUTPUT CHARACTERISTICS
VCC = ±15V, RL = 2kΩ
VCC = ±15V, RL = 600Ω
VCC = ±18V, RL = 600Ω
VCC = ±18V
±13
±13
±16
12.5
12
14.0
V (min)
V (min)
V (min)
VOUT
Output Voltage Swing
ISHIRT
IOUT
Output Short-Circuit Current
Output Current
+75/-70
26
+55/-50
24
mA (min)
mA (min)
VCC = ±18V, RL = 600Ω
Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of device reliability
and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or other conditions beyond those indicated in
the Recommended Operating Conditions is not implied. The Recommended Operating Conditions indicate conditions at which the device is functional and the
device should not be operated beyond such conditions. All voltages are measured with respect to the ground pin, unless otherwise specified.
Note 2: The Electrical Characteristics tables list guaranteed specifications under the listed Recommended Operating Conditions except as otherwise modified
or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and are not guaranteed.
Note 3: Amplifier output connected to GND, any number of amplifiers within a package.
Note 4: Human body model, applicable std. JESD22-A114C.
Note 5: Machine model, applicable std. JESD22-A115-A.
Note 6: Typical values represent most likely parametric norms at TA = +25ºC, and at the Recommended Operation Conditions at the time of product
characterization and are not guaranteed.
Note 7: Datasheet min/max specification limits are guaranteed by test or statistical analysis.
Note 8: Charge device model, applicable std JESD22–C101–A.
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4
Typical Performance Characteristics
THD+N vs Output Voltage
VCC = –VEE = 15V, RL = 2kΩ
THD+N vs Output Voltage
VCC = –VEE = 18V, RL = 2kΩ
300597e9
300597f1
THD+N vs Output Voltage
VCC = –VEE = 5V, RL = 2kΩ
THD+N vs Output Voltage
VCC = –VEE = 15V, RL = 600Ω
300597e7
300597f0
THD+N vs Output Voltage
VCC = –VEE = 18V, RL = 600Ω
THD+N vs Output Voltage
VCC = –VEE = 5V, RL = 600Ω
300597f2
300597e8
5
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THD+N vs Frequency
VCC = –VEE = 15V,
THD+N vs Frequency
VCC = –VEE = 18V,
RL = 2kΩ, VOUT = 3VRMS
RL = 2kΩ, VOUT = 3VRMS
300597d6
300597d8
THD+N vs Frequency
VCC = –VEE = 15V,
THD+N vs Frequency
VCC = –VEE = 18V,
RL = 600Ω, VOUT = 3VRMS
RL = 600Ω, VOUT = 3VRMS
300597d7
300597d9
IMD vs Output Voltage
VCC = –VEE = 15V, RL = 2kΩ
IMD vs Output Voltage
VCC = –VEE = 18V, RL = 2kΩ
300597d1
300597d3
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IMD vs Output Voltage
VCC = –VEE = 5V, RL = 2kΩ
IMD vs Output Voltage
VCC = –VEE = 15V, RL = 600Ω
300597c9
300597d2
IMD vs Output Voltage
VCC = –VEE = 18V, RL = 600Ω
IMD vs Output Voltage
VCC = –VEE = 5V, RL = 600Ω
300597d4
300597d0
Voltage Noise Density vs Frequency
Current Noise Density vs Frequency
300597e6
300597c8
7
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PSRR vs Frequency
VCC = –VEE = 15V,
+PSRR vs Frequency
RL = 2kΩ, VRIPPLE = 200mVpp
300597f7
300597f4
—PSRR vs Frequency
Output Voltage vs Supply Voltage
RL = 2kΩ, THD+N = 1%
300597f8
300597f5
Output Voltage vs Supply Voltage
Large-Signal Transient Response
AV = –1, CL = 100pF
RL = 600Ω, THD+N = 1%
300597f3
300597f6
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Application Hints
OUTPUT DRIVE AND STABILITY
The LME49990 is unity gain stable from both input (both sta-
ble when gain = -1 or gain = 1). It able to drive resistive load
600Ω with output circuit with a typical 27mA. Capacitive loads
up to 100pF will cause little change in the phase characteris-
tics of the amplifiers and are therefore allowable.
Capacitive loads greater than 100pF must be isolated from
the output. The most straight forward way to do this is to put
a resistor in series with the output. This resistor will also pre-
vent excess power dissipation if the output is accidentally
shorted.
The effective load impedance (including feedback resistance)
should be kept above 600Ω for fast settling. Load capacitance
should also be minimized if good settling time is to be opti-
mized. Large feedback resistors will make the circuit more
susceptible to stray capacitance, so in high-speed applica-
tions keep the feedback resistors in the 1kΩ to 2 kΩ range
whenever practical.
300597c7
FIGURE 3. LME4990 Output Compensation Network
SUPPLY BYPASSING
To achieve a low noise and high-speed audio performance,
power supply bypassing is extremely important. Applying
multiple bypass capacitors is highly recommended. From ex-
periment results, a 10μF tantalum, 2.2μF ceramic, and a
0.47μF ceramic work well. All bypass capacitors leads should
be very short. The ground leads of capacitors should also be
separated to reduce the inductance to ground. To obtain the
best result, a large ground plane layout technique is recom-
mended and it was applied in the LME49990 evaluation
board.
OUTPUT COMPENSATION
In most of the audio applications, the device will be operated
in a room temperature and compensation networks are not
necessary. However, the consideration of output network as
shown in Figure 3 may be taken into account for some of the
high performance audio applications such as high speed data
conversion or when operating in a relatively low junction tem-
perature. The compensation network will also provide a small
improvement in settling time for the response time demanding
applications.
9
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Typical Applications
Balanced Input Mic Amp
30059743
Illustration is:
V0 = 101(V2 − V1)
300597c6
MFB 3rd Order PCM LPF
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10
It is important to note that the oscilloscope input amplifier may
be overdriven during a settling time measurement, so the os-
cilloscope must be capable of recovering from overdrive very
quickly. The signal generator used for this measurement must
be able to drive 50Ω with a very clean ±10VPP square wave.
The Slew Rate of LME49990 tells how fast it responses to a
transient or a step input. It may be measured by the test circuit
in Figure 7. The Slew Rate of LME49990 is specified in close-
Application Information
SETTLING TIME AND SLEW RATE MEASUREMENTS
The settling time of LME49990 may be verified using the test
circuit in Figure 6. The LME49990 is connected for inverting
operation, and the output voltage is summed with the input
voltage step. When the LME49990’s output voltage is equal
to the input voltage, the voltage on the PROBE 1 will be zero.
Any voltage appearing at this point will represent an error. And
the settling time is equal to the time required for the error sig-
nal displayed on the oscilloscope to decay to less than one-
half the necessary accuracy (See Settling Time – Output
Swing photo). For a 10V input signal, settling time to 0.01%
(1mV) will occur when the displayed error is less than 0.5mV.
Since settling time is strongly dependent on slew rate, settling
will be faster for smaller signal swings. The LME49990’s in-
verting slew rate is faster than its non-inverting slew rate, so
settling will be faster for inverting applications, as well.
loop gain = -1 when the output driving a 1kΩ load at 20VPP
.
The LME49990 behaves very stable in shape step response
and have a minimal ringing in both small and large signal step
response (See Typical Performance Characteristic). The slew
rate typical value reach as high as ±18V/μS was measured
when the output reach -20V refer to the start point when input
voltage equals to zero.
300597c1
FIGURE 6: Settling Time Test Circuit
300597c2
FIGURE 7: Slew Rate Test Circuit
11
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DISTORTION MEASUREMENTS
the error signal (distortion) is amplified by a factor of 101. Al-
though the amplifier’s closed-loop gain is unaltered, the feed-
back available to correct distortion errors is reduced by 101,
which means that measurement resolution increases by 101.
To ensure minimum effects on distortion measurements,
keep the value of R1 low as shown in Figure 8.
The vanishingly low residual distortion produced by
LME49990 is below the capabilities of all commercially avail-
able equipment. This makes distortion measurements just
slightly more difficult than simply connecting a distortion me-
ter to the amplifier’s inputs and outputs. The solution, how-
ever, is quite simple: an additional resistor. Adding this
resistor extends the resolution of the distortion measurement
equipment.
This technique is verified by duplicating the measurements
with high closed loop gain and/or making the measurements
at high frequencies. Doing so produces distortion compo-
nents that are within the measurement equipment’s capabili-
ties. This datasheet’s THD+N and IMD values were generat-
ed using the above described circuit connected to an Audio
Precision System Two Cascade.
The LME49990’s low residual distortion is an input referred
internal error. As shown in Figure 8, adding the 10Ω resistor
connected between the amplifier’s inverting and non-inverting
inputs changes the amplifier’s noise gain. The result is that
30059707
FIGURE 8: THD+N and IMD Distortion Test Circuit
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12
Revision History
Rev
1.0
Date
Description
12/16/09
01/08/10
Initial released.
Input text edits.
1.01
13
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Physical Dimensions inches (millimeters) unless otherwise noted
Dual-In-Line Package
Order Number LME49990MA
NS Package Number M08A
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14
Notes
15
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Notes
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