LM6362N [NSC]

High Speed Operational Amplifier; 高速运算放大器
LM6362N
型号: LM6362N
厂家: National Semiconductor    National Semiconductor
描述:

High Speed Operational Amplifier
高速运算放大器

运算放大器
文件: 总13页 (文件大小:252K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
September 1995  
LM6162/LM6262/LM6362  
High Speed Operational Amplifier  
Y
Low supply current  
5 mA  
General Description  
The LM6362 family of high-speed amplifiers exhibits an ex-  
cellent speed-power product, delivering 300 V/ms and  
100 MHz gain-bandwidth product (stable for gains as low as  
Y
Y
Y
Y
Y
Y
Fast settling time  
120 ns to 0.1%  
k
Low differential gain  
0.1%  
k
Low differential phase  
Wide supply range  
0.1  
§
4.75V to 32V  
a
b
2 or 1) with only 5 mA of supply current. Further power  
Stable with unlimited capacitive load  
Well behaved; easy to apply  
savings and application convenience are possible by taking  
advantage of the wide dynamic range in operating supply  
a
voltage which extends all the way down to 5V.  
Applications  
Y
These amplifiers are built with National’s VIPTM (Vertically  
Integrated PNP) process which provides fast transistors that  
are true complements to the already fast NPN devices. This  
advanced junction-isolated process delivers high speed per-  
formance without the need for complex and expensive di-  
electric isolation.  
Video amplifier  
Y
Wide-bandwidth signal conditioning for image process-  
ing (FAX, scanners, laser printers)  
Y
Y
Hard disk drive preamplifier  
Error amplifier for high-speed switching regulator  
Features  
High slew rate  
Y
300 V/ms  
100 MHz  
Y
High gain-bandwidth product  
Connection Diagrams  
20-Lead LCC  
10-Pin Ceramic Flatpak  
TL/H/1106115  
Top View  
See NS Package Number W10A  
TL/H/11061–2  
See NS Package Number N08E,  
M08A or J08A  
TL/H/1106114  
Top View  
See NS Package Number E20A  
Temperature Range  
Industrial  
NSC  
Package  
Drawing  
Military  
s
Commercial  
s
s
s
s
s
a
T
A
b
a
b
a
55 C  
§
T
125 C  
§
25 C  
§
T
A
85 C  
§
0 C  
§
70 C  
§
A
LM6162N  
LM6262N  
LM6362N  
8-Pin Molded DIP  
N08E  
J08A  
M08A  
E20A  
LM6162J/883  
8-Pin Ceramic DIP  
8-Pin Molded Surface Mt.  
20-Lead LCC  
5962-9216501PA  
LM6262M  
LM6362M  
LM6162E/883  
5962-92165012A  
LM6162W/883  
10-Pin Ceramic Flatpak  
W10A  
5962-9216501HA  
VIPTM is a trademark of National Semiconductor Corporation.  
C
1995 National Semiconductor Corporation  
TL/H/11061  
RRD-B30M115/Printed in U. S. A.  
Absolute Maximum Ratings (Note 1)  
If Military/Aerospace specified devices are required,  
please contact the National Semiconductor Sales  
Office/Distributors for availability and specifications.  
See AN-450 ‘‘Surface Mounting Methods and Their Effect  
on Product Reliability’’ for other methods of soldering sur-  
face mount devices.  
Supply Voltage (Va Vb  
)
36V  
Storage Temperature Range  
Max Junction Temperature  
ESD Tolerance (Note 5)  
65 C  
§
T
J
150 C  
§
150 C  
s
s
b
a
g
Differential Input Voltage (Note 2)  
8V  
§
1100V  
(Va 0.7V) to  
b
a
g
Common-Mode Input Voltage  
(Note 3)  
(Vb  
0.7V)  
Operating Ratings  
Temperature Range (Note 6)  
LM6162  
Output Short Circuit to GND (Note 4)  
Continuous  
Soldering Information  
Dual-In-Line Package (N)  
Soldering (10 seconds)  
Small Outline Package (M)  
Vapor Phase (60 seconds)  
Infrared (15 seconds)  
s
s
b
a
125 C  
55 C  
T
J
§
25 C  
§
260 C  
§
s
s
a
b
LM6262  
T
85 C  
§
70 C  
§
§
§
J
J
s
s
a
LM6362  
0 C  
T
215 C  
§
Supply Voltage Range  
4.75V to 32V  
220 C  
§
DC Electrical Characteristics  
t
25 C; limits in boldface type apply over the Operating Temperature Range.  
e
e
g
These limits apply for supply voltage  
e
15V, V  
0V, and R  
100 kX, unless otherwise specified. Limits in standard  
CM  
L
e
typeface are for T  
T
J
§
A
LM6162  
Limit  
LM6262  
Limit  
LM6362  
Limit  
Typical  
(Note 7)  
Symbol  
Parameter  
Conditions  
Units  
(Note 8)  
(Note 8)  
(Note 8)  
g
g
g
g
g
g
13  
V
OS  
Input Offset Voltage  
3
5
5
mV  
g
8
8
15  
max  
DV  
Input Offset Voltage  
Average Drift  
OS  
7
mV/ C  
§
DTemp  
I
I
Input Bias Current  
2.2  
3
3
4
mA  
bias  
6
5
6
max  
g
g
g
g
1500  
Input Offset Current  
150  
350  
350  
nA  
OS  
g
g
g
1900  
800  
600  
max  
DI  
Input Offset Current  
Average Drift  
OS  
0.3  
nA/ C  
§
DTemp  
R
C
Input Resistance  
Input Capacitance  
Differential  
180  
2.0  
kX  
IN  
pF  
IN  
e
e
2 kX  
g
A
VOL  
Large Signal  
Voltage Gain  
V
10V, R  
1400  
1000  
1000  
800  
V/V  
min  
OUT  
(Note 9)  
L
500  
700  
650  
e
R
L
10 kX  
6500  
V/V  
e
a
a
a
a
13.8  
g
V
CM  
Input Common-Mode  
Voltage Range  
Supply  
15V  
14.0  
13.9  
13.9  
V
a
a
a
13.8  
13.8  
13.7  
min  
b
b
b
b
13.2  
12.9  
12.9  
12.9  
V
b
b
b
12.7  
12.7  
12.8  
max  
e a  
Supply  
5V  
4.0  
1.6  
3.9  
3.9  
3.8  
V
(Note 10)  
3.8  
3.8  
3.7  
min  
1.8  
1.8  
1.9  
V
2.0  
2.0  
2.0  
max  
s
s
s
b
g
a
CMRR  
PSRR  
Common-Mode  
Rejection Ratio  
10V  
10V  
V
V
10V  
100  
93  
83  
83  
76  
dB  
CM  
79  
79  
74  
min  
s
g
Power Supply  
16V  
83  
83  
76  
dB  
S
Rejection Ratio  
79  
79  
74  
min  
e
e
15V, R  
L
a
a
a
a
13.4  
g
V
O
Output Voltage  
Swing  
Supply  
2 kX  
14.2  
13.5  
13.5  
V
a
a
13.3  
13.3  
13.3  
min  
b
b
b
b
12.9  
13.4  
13.0  
13.0  
V
b
b
b
12.7  
12.8  
12.8  
max  
2
DC Electrical Characteristics (Continued)  
t
e
e
0V, and R  
g
These limits apply for supply voltage  
15V, V  
100 kX, unless otherwise specified. Limits in standard  
e
25 C; limits in boldface type apply over the Operating Temperature Range.  
CM  
L
e
typeface are for T  
T
J
§
A
LM6162  
Limit  
LM6262  
Limit  
LM6362  
Limit  
Typical  
(Note 7)  
Symbol  
Parameter  
Conditions  
Units  
(Note 8)  
(Note 8)  
(Note 8)  
e a  
V
Output Voltage Swing  
Supply  
e
5V and  
4.2  
1.3  
65  
3.5  
3.5  
3.4  
V
O
OSC  
S
R
2 kX (Note 10)  
3.3  
3.3  
3.3  
min  
L
1.7  
1.7  
1.8  
V
2.0  
1.9  
1.9  
max  
I
I
Output Short  
Sourcing  
Sinking  
30  
30  
30  
mA  
min  
Circuit Current  
20  
25  
25  
65  
30  
30  
30  
mA  
min  
20  
25  
25  
Supply Current  
5.0  
6.5  
6.5  
6.8  
mA  
6.8  
6.7  
6.9  
max  
AC Electrical Characteristics  
These limits apply for supply voltage  
t
s
25 C; limits in boldface type apply over the Operating Temperature Range.  
e
e
0V, R  
g
15V, V  
100 kX, and C  
5 pF, unless otherwise specified. Limits in  
CM  
L
L
e
e
standard typeface are for T  
T
J
§
A
LM6162  
Limit  
LM6262  
Limit  
LM6362  
Limit  
Typical  
(Note 7)  
Symbol  
Parameter  
Conditions  
Units  
(Note 8)  
(Note 8)  
(Note 8)  
e
GBW  
Gain-Bandwidth Product  
Slew Rate  
f
20 MHz  
100  
80  
80  
75  
MHz  
min  
55  
65  
65  
e
g
Supply  
5V  
70  
MHz  
e a  
SR  
A
V
2 (Note 11)  
300  
200  
200  
200  
V/ms  
180  
180  
180  
min  
e
g
Supply  
5V  
200  
4.5  
V/ms  
e
PBW  
Power Bandwidth  
Settling Time  
V
20 V  
MHz  
OUT  
PP  
t
s
10V step, to 0.1%  
100  
45  
ns  
e b  
e
2 kX  
A
1, R  
V
V
L
e a  
w
Phase Margin  
A
2
deg  
%
m
k
e a  
e a  
Differential Gain  
Differential Phase  
Input Noise Voltage  
Input Noise Current  
NTSC, A  
NTSC, A  
e
2
2
0.1  
V
k
0.1  
deg  
V
e
f
f
10 kHz  
10 kHz  
10  
nV/  
pA/  
S
Hz  
Hz  
n
e
i
1.2  
S
n
Note 1: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply when operating the  
device beyond its rated operating conditions.  
Note 2: The ESD protection circuitry between the inputs will begin to conduct when the differential input voltage reaches 8V.  
Note 3: a) In addition, the voltage between the Va pin and either input pin must not exceed 36V.  
b) When the voltage applied to an input pin is driven more than 0.3V below the negative supply pin voltage, a substrate diode begins to conduct. Current  
through this pin must then be kept less than 20 mA to limit damage from self-heating.  
Note 4: Although the output current is internally limited, continuous short-circuit operation at elevated ambient temperature can result in exceeding the maximum  
allowed junction temperature of 150 C.  
§
Note 5: This value is the average voltage that the weakest pin combinations can withstand and still conform to the datasheet limits. The test circuit used consists of  
the human body model, 100 pF in series with 1500X.  
Note 6: The typical thermal resistance, junction-to-ambient, of the molded plastic DIP (N package) is 105 C/W. For the molded plastic SO (M package), use  
§
155 C/W. All numbers apply for packages soldered directly into a printed circuit board.  
§
Note 7: Typical values are for T  
e
25 C, and represent the most likely parametric norm.  
§
J
Note 8: Limits are guaranteed, by testing or correlation.  
Note 9: Voltage Gain is the total output swing (20V) divided by the magnitude of the input signal required to produce that swing.  
b
Note 10: For single-supply operation, the following conditions apply: Va 5V, V  
0V, V  
CM  
Adjust pins) are each  
e
e
e
e
2.5V, V 2.5V. Pin 1 and Pin 8 (V  
OUT OS  
connected to pin 4 (Vb) to realize maximum output swing. This connection will increase the offset voltage.  
e
e
g
10V step. For 5V supplies, V  
Note 11: V  
1V step.  
IN  
IN  
Note 12: A military RETS electrical test specification is available on request.  
3
e
e
10 kX, T  
A
Typical Performance Characteristics R  
25 C unless otherwise noted  
§
L
Supply Current vs  
Supply Voltage  
Common-Mode  
Rejection Ratio  
Power Supply  
Rejection Ratio  
TL/H/11061–3  
4
Typical Performance Characteristics (Continued)  
e
e
25 C unless otherwise noted  
R
10 kX, T  
§
L
A
Differential Gain (Note)  
Differential Phase (Note)  
TL/H/11061–5  
Note: Differential gain and differential phase  
measured for four series LM6362 op amps con-  
a
figured with gain of 2 each, in series with a  
1:16 attenuator and an LM6321 buffer. Error  
added by LM6321 is negligible. Test performed  
using Tektronix Type 520 NTSC test system.  
TL/H/11061–4  
e a  
Step Response; Av  
2
TL/H/11061–6  
TIME (50 ns/div)  
Input Noise Voltage  
Input Noise Current  
Power Bandwidth  
TL/H/11061–7  
5
Typical Performance Characteristics (Continued)  
e
e
25 C unless otherwise noted  
R
10 kX, T  
§
L
A
Open-Loop  
Frequency Response  
Open-Loop  
High-Frequency Response  
TL/H/11061–8  
TL/H/11061–9  
Common-Mode Input  
Voltage Limits  
Bias Current vs  
Common-Mode Voltage  
Output Saturation Voltage  
TL/H/1106110  
Simplified Schematic  
TL/H/11061–1  
6
Application Tips  
The LM6362 has been decompensated for a wider gain-  
Power supply bypassing is not as critical for LM6362 as it is  
for other op amps in its speed class. However, bypassing  
will improve the stability and transient response of the  
LM6362, and is recommended for every design. 0.01 mF to  
0.1 mF ceramic capacitors should be used (from each sup-  
ply ‘‘rail’’ to ground); if the device is far away from its power  
supply source, an additional 2.2 mF to 10 mF of tantalum  
may be required for extra noise reduction.  
bandwidth product than the LM6361. However, the LM6362  
b
still offers stability at gains of 2 (and 1) or greater over the  
specified ranges of temperature, power supply voltage, and  
load. Since this decompensation involved reducing the emit-  
ter-degeneration resistors in the op amp’s input stage, the  
DC precision has been increased in the form of lower offset  
voltage and higher open-loop gain.  
Other op amps in this family include the LM6361, LM6364,  
and LM6365. If unity-gain stability is required, the LM6361  
should be used. The LM6364 has been decompensated for  
operation at gains of 5 or more, with corresponding greater  
gain-bandwidth product (125 MHz, typical) and DC preci-  
sion. The fully-uncompensated LM6365 offers gain-band-  
width product of 725 MHz, typical, and is stable for gains of  
25 or more. All parts in this family, regardless of compensa-  
tion, have the same high slew rate of 300 V/ms (typ).  
Keep all leads short to reduce stray capacitance and lead  
inductance, and make sure ground paths are low-imped-  
ance, especially where heavier currents will be flowing.  
Stray capacitance in the circuit layout can cause signal cou-  
pling from one pin, input or lead to another, and can cause  
circuit gain to unintentionally vary with frequency.  
Breadboarded circuits will work best if they are built using  
generic PC boards with a good ground plane. If the op amps  
are used with sockets, as opposed to being soldered into  
the circuit, the additional input capacitance may degrade  
The LM6362 is unusually tolerant of capacitive loads. Most  
op amps tend to oscillate when their load capacitance is  
greater than about 200 pF (in low-gain circuits). However,  
load capacitance on the LM6362 effectively increases its  
compensation capacitance, thus slowing the op amp’s re-  
sponse and reducing its bandwidth. The compensation is  
not ideal, though, and ringing may occur in low-gain circuits  
with large capacitive loads.  
a
b
1), a  
circuit frequency response. At low gains ( 2 or  
feedback capacitor C from output to inverting input will  
f
compensate for the phase lag caused by capacitance at the  
inverting input. Typically, values from 2 pF to 5 pF work well;  
however, best results can be obtained by observing the am-  
plifier pulse response and optimizing C for the particular  
f
layout.  
Typical Applications  
Offset Voltage Adjustment  
Inverting Amplifier, 30 MHz Bandwidth  
TL/H/1106111  
Operation
supplies res
bandwidth,
(typ).  
TL/H/1106112  
7
Typical Applications (Continued)  
Video Cable Driver  
supply voltage  
of LM6321. If  
k and connect  
M6321.  
TL/H/1106113  
8
9
Physical Dimensions inches (millimeters)  
20-Lead Small Outline Package (E)  
Order Number LM6162E/883  
NS Package Number E20A  
Ceramic Dual-In-Line Package (J)  
Order Number LM6162J/883  
NS Package Number J08A  
10  
Physical Dimensions inches (millimeters) (Continued)  
Molded Package SO (M)  
Order Number LM6262M or LM6362M  
NS Package Number M08A  
Molded Dual-In-Line Package (N)  
Order Number LM6162N, LM6262N or LM6362N  
NS Package Number N08E  
11  
Physical Dimensions inches (millimeters) (Continued)  
10-Pin Ceramic Flatpak  
Order Number LM6162W/883  
NS Package Number W10A  
LIFE SUPPORT POLICY  
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL  
SEMICONDUCTOR CORPORATION. As used herein:  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant  
into the body, or (b) support or sustain life, and whose  
failure to perform, when properly used in accordance  
with instructions for use provided in the labeling, can  
be reasonably expected to result in a significant injury  
to the user.  
2. A critical component is any component of a life  
support device or system whose failure to perform can  
be reasonably expected to cause the failure of the life  
support device or system, or to affect its safety or  
effectiveness.  
National Semiconductor  
Corporation  
National Semiconductor  
Europe  
National Semiconductor  
Hong Kong Ltd.  
National Semiconductor  
Japan Ltd.  
a
1111 West Bardin Road  
Arlington, TX 76017  
Tel: 1(800) 272-9959  
Fax: 1(800) 737-7018  
Fax:  
(
49) 0-180-530 85 86  
@
13th Floor, Straight Block,  
Ocean Centre, 5 Canton Rd.  
Tsimshatsui, Kowloon  
Hong Kong  
Tel: (852) 2737-1600  
Fax: (852) 2736-9960  
Tel: 81-043-299-2309  
Fax: 81-043-299-2408  
Email: cnjwge tevm2.nsc.com  
a
a
a
a
Deutsch Tel:  
English Tel:  
Fran3ais Tel:  
Italiano Tel:  
(
(
(
(
49) 0-180-530 85 85  
49) 0-180-532 78 32  
49) 0-180-532 93 58  
49) 0-180-534 16 80  
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.  
This datasheet has been download from:  
www.datasheetcatalog.com  
Datasheets for electronics components.  

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