LM336BM-5.0 [NSC]
5.0V Reference Diode; 5.0V参考二极管型号: | LM336BM-5.0 |
厂家: | National Semiconductor |
描述: | 5.0V Reference Diode |
文件: | 总11页 (文件大小:220K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
June 1999
LM136-5.0/LM236-5.0/LM336-5.0
5.0V Reference Diode
0˚C to +70˚C temperature range. See the connection dia-
grams for available packages. For applications requiring
2.5V see LM136-2.5.
General Description
The LM136-5.0/LM236-5.0/LM336-5.0 integrated circuits are
precision 5.0V shunt regulator diodes. These monolithic IC
voltage references operate as a low temperature coefficient
5.0V zener with 0.6Ω dynamic impedance. A third terminal
on the LM136-5.0 allows the reference voltage and tempera-
ture coefficient to be trimmed easily.
Features
n Adjustable 4V to 6V
n Low temperature coefficient
n Wide operating current of 600 µA to 10 mA
n 0.6Ω dynamic impedance
The LM136-5.0 series is useful as a precision 5.0V low volt-
age reference for digital voltmeters, power supplies or op
amp circuitry. The 5.0V makes it convenient to obtain a
stable reference from low voltage supplies. Further, since
the LM136-5.0 operates as a shunt regulator, it can be used
as either a positive or negative voltage reference.
±
n
1% initial tolerance available
n Guaranteed temperature stability
n Easily trimmed for minimum temperature drift
n Fast turn-on
The LM136-5.0 is rated for operation over −55˚C to +125˚C
while the LM236-5.0 is rated over a −25˚C to +85˚C tem-
perature range. The LM336-5.0 is rated for operation over a
n Three lead transistor package
Connection Diagrams
TO-92
Plastic Package
DS005716-4
Bottom View
Order Number LM236AZ-5.0, LM336Z-5.0 or LM336BZ-5.0
See NS Package Number Z03A
TO-46
Metal Can Package
DS005716-5
Bottom View
Order Number LM136H-5.0,
LM136H-5.0/883, LM236H-5.0,
LM136AH-5.0, LM136AH-5.0/883,
or LM236AH-5.0
See NS Package Number H03H
© 1999 National Semiconductor Corporation
DS005716
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Connection Diagrams (Continued)
SO Package
DS005716-7
Order Number LM336M-5.0 or LM336BM-5.0
See NS Package Number M08A
Typical Applications
5.0V Reference
5.0V Reference with Minimum
Temperature Coefficient
Trimmed 4V to 6V Reference
with Temperature Coefficient
Independent of Breakdown Voltage
DS005716-1
DS005716-3
* Does not affect temperature coefficient
DS005716-15
†
Adjust to 5.00V
* Any silicon signal diode
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2
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
LM336-5.0
0˚C to +70˚C
Soldering Information
TO-92 Package (10 sec.)
TO-46 Package (10 sec.)
SO Package
260˚C
300˚C
Reverse Current
15mA
10mA
Vapor Phase (60 sec.)
Infrared (15 sec.)
215˚C
220˚C
Forward Current
Storage Temperature
Operating Temperature Range (Note 2)
LM136-5.0
−60˚C to +150˚C
See AN-450 “Surface Mounting Methods and Their Effect on
Product Reliability” (appendix D) for other methods of solder-
ing surface mount devices.
−55˚C to +150˚C
−25˚C to +85˚C
LM236-5.0
Electrical Characteristics
(Note 3)
LM136A-5.0/LM236A-5.0
LM136-5.0/LM236-5.0
LM336B-5.0
LM336-5.0
Parameter
Conditions
Units
Min
Typ
Max
Min
Typ Max
=
=
Reverse Breakdown Voltage
TA 25˚C, IR 1 mA
LM136-5.0/LM236-5.0/LM336-5.0
LM136A-5.0/LM236A-5.0, LM336B-5.0
4.9
5.00
5.00
6
5.1
5.05
12
4.8
5.00
5.00
6
5.2
5.1
20
V
V
4.95
4.90
=
Reverse Breakdown Change
With Current
TA 25˚C,
mV
600 µA≤IR≤10 mA
=
=
=
Reverse Dynamic Impedance
Temperature Stability
(Note 4)
TA 25˚C, IR 1 mA, f 100 Hz
0.6
1.2
0.6
4
2
Ω
VR Adjusted 5.00V
=
IR 1 mA, (Figure 2)
0˚C≤TA≤70˚C (LM336-5.0)
−25˚C≤TA≤+85˚C (LM236-5.0)
−55˚C≤TA≤+125˚C (LM136-5.0)
600 µA≤IR≤10 mA
12
24
2.5
mV
mV
mV
mV
7
20
6
18
36
17
Reverse Breakdown Change
With Current
6
±
±
1
Adjustment Range
Circuit of Figure 1
1
V
Ω
=
Reverse Dynamic Impedance
Long Term Stability
IR 1 mA
0.8
20
1.6
0.8
20
=
=
=
±
TA 25˚C 0.1˚C, IR 1 mA, t 1000 hrs
ppm
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Electrical specifications do not apply when operating the device
beyond its specified operating conditions.
Note 2: For elevated temperature operation, T max is:
j
LM136
LM236
LM336
150˚C
125˚C
100˚C
Thermal Resistance
TO-92
TO-46
SO-8
θja (Junction to Ambient)
180˚C/W (0.4" Leads)
440˚C/W 165˚C/W
170˚C/W (0.125"
Leads)
θja (Junction to Case)
N/A
80˚C/W
N/A
Note 3: Unless otherwise specified, the LM136-5.0 is specified from −55˚C≤T ≤+125˚C, the LM236-5.0 from −25˚C≤T ≤+85˚C and the LM336-5.0 from
A
A
0˚C≤T ≤+70˚C.
A
Note 4: Temperature stability for the LM336 and LM236 family is guaranteed by design. Design limits are guaranteed (but not 100% percent production tested) over
the indicated temperature and supply voltage ranges. These limits are not used to calculate outgoing quality levels. Stability is defined as the maximum charge in
V
REF
from 25˚C to T (min) or T (max).
A A
3
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Typical Performance Characteristics
Reverse Voltage Change
Zener Noise Voltage
Dynamic Impedance
DS005716-17
DS005716-19
DS005716-18
Response Time
Reverse Characteristics
DS005716-20
DS005716-21
Temperature Drift
Forward Characteristics
DS005716-23
DS005716-22
Application Hints
The LM136-5.0 series voltage references are much easier to
use than ordinary zener diodes. Their low impedance and
wide operating current range simplify biasing in almost any
circuit. Further, either the breakdown voltage or the tempera-
ture coefficient can be adjusted to optimize circuit perfor-
mance.
If minimum temperature coefficient is desired, four diodes
can be added in series with the adjustment potentiometer as
shown in Figure 2. When the device is adjusted to 5.00V the
temperature coefficient is minimized. Almost any silicon sig-
nal diode can be used for this purpose such as a 1N914,
1N4148 or a 1N457. For proper temperature compensation
the diodes should be in the same thermal environment as
the LM136-5.0. It is usually sufficient to mount the diodes
near the LM136-5.0 on the printed circuit board. The abso-
lute resistance of the network is not critical and any value
from 2k to 20k will work. Because of the wide adjustment
range, fixed resistors should be connected in series with the
pot to make pot setting less critical.
Figure 1 shows an LM136-5.0 with a 10k potentiometer for
adjusting the reverse breakdown voltage. With the addition
of R1 the breakdown voltage can be adjusted without affect-
ing the temperature coefficient of the device. The adjustment
range is usually sufficient to adjust for both the initial device
tolerance and inaccuracies in buffer circuitry.
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4
Application Hints (Continued)
DS005716-9
FIGURE 1. LM136-5.0 with Pot for Adjustment of
=
±
Breakdown Voltage (Trim Range
1.0V Typical)
DS005716-10
FIGURE 2. Temperature Coefficient Adjustment
=
±
(Trim Range
0.5V Typical)
5
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Typical Applications
Precision Power Regulator with Low Temperature Coefficient
DS005716-11
* Adjust for 6.25V across R1
5V Crowbar
DS005716-12
Adjustable Shunt Regulator
DS005716-13
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6
Typical Applications (Continued)
Bipolar Output Reference
Linear Ohmmeter
DS005716-25
5.0V Square Wave Calibrator
DS005716-14
Op Amp with Output Clamped
DS005716-26
10V Buffered Reference
DS005716-24
DS005716-27
7
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Typical Applications (Continued)
Wide Input Range Reference
Low Noise Buffered Reference
DS005716-29
DS005716-28
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8
Schematic Diagram
9
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Physical Dimensions inches (millimeters) unless otherwise noted
TO-46 Metal Can Package (H)
Order Number LM136H-5.0, LM136H-5.0/883, LM236H-5.0,
LM136AH-5.0, LM136AH-5.0/883 or LM236AH-5.0
NS Package Number H03H
Small Outline (SO-8) Package
Order Number LM336M-5.0 or LM336BM-5.0
NS Package Number M08A
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10
Physical Dimensions inches (millimeters) unless otherwise noted (Continued)
Plastic Package (Z)
Order Number LM236AZ-5.0, LM336Z-5.0 or LM336BZ-5.0
NS Package Number Z03A
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