LM124E/883 [NSC]

IC QUAD OP-AMP, 5000 uV OFFSET-MAX, 1 MHz BAND WIDTH, CQCC20, LCC-20, Operational Amplifier;


型号：	LM124E/883
厂家：	National Semiconductor
描述：	IC QUAD OP-AMP, 5000 uV OFFSET-MAX, 1 MHz BAND WIDTH, CQCC20, LCC-20, Operational Amplifier 放大器
文件：	总12页 (文件大小：180K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MICROCIRCUIT DATA SHEET

Original Creation Date: 07/07/95

Last Update Date: 05/24/01

MNLM124-X REV 1A2

Last Major Revision Date: 05/21/01

LOW POWER QUAD OPERATIONAL AMPLIFIER

General Description

The LM124 consists of four independent, high gain, internally frequency compensated

operational amplifiers which were designed specifically to operate from a single power

supply over a wide range of voltages. Operation from split power supplies is also posible

and the low power supply current drain is independent of the magnitude of the power supply

voltage.

Application areas include transducer amplifiers, DC gain blocks and all the conventional

op amp circuits which now can be more easily implemented in single power supply systems.

For example, the LM124 can be directly operated off of the standard +5Vdc power supply

voltage which is used in digital systems and will easily provide the required interface

electronics without requiring the additional +15Vdc power supplies.

Industry Part Number

NS Part Numbers

LM124

LM124E/883

LM124J/883

LM124W/883

LM124WG/883

Prime Die

LM1902

Controlling Document

SEE FEATURES SECTION

Processing

Subgrp Description

Temp (^oC)

MIL-STD-883, Method 5004

Static tests at

+25

Static tests at

+125

-55

Static tests at

Dynamic tests at

Functional tests at

Switching tests at

+25

Quality Conformance Inspection

+125

-55

MIL-STD-883, Method 5005

+25

+125

-55

+25

+125

-55

MICROCIRCUIT DATA SHEET

MNLM124-X REV 1A2

Features

- Internally frequency compensated for unity gain.

- Large DC voltage gain.

- Wide bandwidth (unity gain)

(temperature compensated)

- Wide power supply range:

Single supply

100dB

1MHz

3V or 32V

or dual supply

+1.5V to +16V

- Very low supply current drain (700uA) - essentially independent of supply voltage.

- Low input baising current

(temperature compensated)

- Low input offset voltage

and offset current

45nA

5mV

5nA

- Input common-mode voltage range includes ground.

- Differential input voltage range equal to the power supply voltage.

- Large output voltage swing.

CONTROLLING DOCUMENTS:

0V to V+ - 1.5V

LM124E/883

LM124J/883

LM124WG/883

77043012A

7704301CA

7704301XA

MICROCIRCUIT DATA SHEET

MNLM124-X REV 1A2

(Absolute Maximum Ratings)

(Note 1)

Supply Voltage V+

Differential Input Voltage

Input Voltage

32Vdc or +16Vdc

32Vdc

-0.3Vdc to +32Vdc

Input Current

(Note 4)

Vin < -0.3Vdc

50mA

Power Dissipation

(Note 2)

CERDIP

1260mW

700mW

1350mW

700mW

CERPACK

LCC

CERAMIC SOIC

Output Short-Circuit to GND

(Note 3)

(One Amplifier)

V+ < 15Vdc and TA = 25 C

Continuous

Operating Temperature Range

Maximum Junction Temperature

Storage Temperature Range

-55 C < Ta < +125 C

150 C

-65 C < Ta < +150 C

260 C

Lead Temperature

Soldering, (10 seconds)

Thermal Resistance

ThetaJA

CERDIP

CERPACK

LCC

(Still Air)

103 C/W

51 C/W

176 C/W

116 C/W

91 C/W

66 C/W

176 C/W

116 C/W

(500LF/Min Air flow)

(Still Air)

(500LF/Min Air flow)

(Still Air)

(500LF/Min Air flow)

CERAMIC SOIC (Still Air)

(500LF/Min Air flow)

ThetaJC

CERDIP

19 C/W

18 C/W

24 C/W

18 C/W

CERPACK

LCC

CERAMIC SOIC

Package Weight

(Typical)

CERDIP

TBD

CERPACK

LCC

TBD

410mg

CERAMIC SOIC

ESD Tolerance

(Note 5)

250V

MICROCIRCUIT DATA SHEET

MNLM124-X REV 1A2

Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.

Operating Ratings indicate conditions for which the device is functional, but do not

guarantee specific performance limits. For guaranteed specifications and test

conditions, see the Electrical Characteristics. The guaranteed specifications apply

only for the test conditions listed. Some performance characteristics may degrade

when the device is not operated under the listed test conditions.

Note 2: The maximum power dissipation must be derated at elevated temperatures and is

dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to

ambient thermal resistance), and TA (ambient temperature). The maximum allowable

power dissipation at any temperature is Pdmax = (Tjmax - TA)/ThetaJA or the number

given in the Absolute Maximum Ratings, whichever is lower.

Note 3: Short circuits from the output to V+ can cause excessive heating and eventual

destruction. When considering short circuits to ground, the maximum output current

is approximately 40mA independent of the magnitude of V+. At values of supply

voltage in excess of +15Vdc, continuous short-circuits can exceed the power

dissipation ratings and cause eventual destruction. Destructive dissipation can

result from simultaneous shorts on all amplifiers.

Note 4: This input current will only exist when the voltage at any of the input leads is

driven negative. It is due to the collector-base junction of the input PNP

transistors becoming forward biased and thereby acting as input diode clamps. In

addition to this diode action, there is also lateral NPN parasitic transistor action

on the IC chip. This transistor action can cause the output voltages of the op amps

to go to the V+ voltage level (or to ground for a large overdrive) for the time

duration that an input is driven negative. This is not destructive and normal output

states will re-establish when the input voltage, which was negative, again returns to

a value greater than -0.3Vdc (at 25 C).

Note 5: Human body model, 1.5K Ohms in series with 100pF.

MICROCIRCUIT DATA SHEET

MNLM124-X REV 1A2

Electrical Characteristics

DC PARAMETERS

(The following conditions apply to all the following parameters, unless otherwise specified.)

DC: All voltages referenced to device ground.

PIN-

NAME

SUB-

SYMBOL

Icc

PARAMETER

CONDITIONS

NOTES

MIN

MAX UNIT

GROUPS

Power Supply

Current

V+ = 5V

1.2

1, 2,

V+ = 30V

3.0

4.0

2, 3

Isink

Output Sink

Current

V+ = 15V, Vout = 200mV, +Vin = 0V,

-Vin = +65mV

V+ = 15V, Vout = 2V, +Vin = 0V,

-Vin = +65mV

2, 3

Isource

Output Source

Current

V+ = 15V, Vout = 2V, +Vin = 0V,

-Vin = -65mV

-20

-10

2, 3

Ios

Vio

Short Circuit

Current

V+ = 5V, Vout = 0V

V+ = 30V, Vcm = 0V

-60

Input Offset

Voltage

-5

-7

-5

-7

-5

-7

-5

2, 3

V+ = 30V, Vcm = 28V

V+ = 5V, Vcm = 0V

2, 3

V+ = 30V, Vcm = 28.5V

CMRR

+Iib

Iio

Common Mode

V+ = 30V, Vin = 0V to 28.5V

Rejection Ratio

Input Bias

Current

V+ = 5V, Vcm = 0V

-150

-300

Input Bias

Current

2, 3

Input Offset

Current

-30

-100

100

2, 3

PSRR

Vcm

Power Supply

Rejection Ratio

V+ = 5V to 30V, Vcm = 0V

V+ = 30V

Common Mode

Voltage

28.5

2, 3

Avs

Large Signal Gain V+ = 15V, Rl = 2K Ohms, Vo = 1V to 11V

V/mV 4

V/mV 5, 6

MICROCIRCUIT DATA SHEET

MNLM124-X REV 1A2

Electrical Characteristics

DC PARAMETERS(Continued)

(The following conditions apply to all the following parameters, unless otherwise specified.)

DC: All voltages referenced to device ground.

PIN-

NAME

SUB-

SYMBOL

Voh

PARAMETER

CONDITIONS

NOTES

MIN

MAX UNIT

GROUPS

Output Voltage

High

V+ = 30V, Rl = 2K Ohms

4, 5,

V+ = 30V, Rl = 10K Ohms

V+ = 30V, Isink = 1uA

4, 5,

Vol

Output Voltage

Low

4, 5,

100

5, 6

V+ = 5V, Rl = 10K Ohms

1KHz, 20KHz

4, 5,

Channel

Separation Amp to

Amp Coupling

Note 1: Guaranteed by Vio tests.

Note 2: Guaranteed, not tested

MICROCIRCUIT DATA SHEET

MNLM124-X REV 1A2

Graphics and Diagrams

GRAPHICS#

DESCRIPTION

CERPACK (W), 14 LEAD (B/I CKT)

05275HRA3

05819HRA2

09173HRA2

E20ARE

LDLESS CHIP CARRIER,TYPE C,20 TERMINAL(B/I CKT)

CERDIP (J), 14 LEAD (B/I CKT)

LCC (E), TYPE C, 20 TERMINAL(P/P DWG)

CERDIP (J), 14 LEAD (P/P DWG)

(blank)

J14ARH

P000254A

P000288A

P000318B

W14BRN

CERDIP (J), 14 LEAD (PINOUT)

LCC (E), 20 LEAD (PINOUT)

CERPACK (W), 14 LEAD (P/P DWG)

CERAMIC SOIC (WG), 14LD (P/P DWG)

WG14ARC

See attached graphics following this page.

OUTPUT 1

OUTPUT 4

IN- 4

IN+ 4

GND

IN+ 3

IN- 1

IN+ 1

V+

IN+ 2

IN- 3

IN- 2

OUTPUT 2

OUTPUT 3

LM124AJ, LM124J

14 - LEAD DIP

CONNECTION DIAGRAM

TOP VIEW

P000288A

MIL/AEROSPACE OPERATIONS

2900 SEMICONDUCTOR DRIVE

SANTA CLARA, CA 95050

IN- 1

OUT 1 N/C OUT 4 IN- 4

IN+ 1

IN+ 4

N/C

V+

GND

N/C

IN+ 2

IN+ 3

IN- 2 OUT 2 N/C OUT 3 IN- 3

LM124AE, LM124E

20 - LEAD LCC

CONNECTION DIAGRAM

TOP VIEW

P000318B

MIL/AEROSPACE OPERATIONS

2900 SEMICONDUCTOR DRIVE

SANTA CLARA, CA 95050

MICROCIRCUIT DATA SHEET

MNLM124-X REV 1A2

Revision History

Rev ECN # Rel Date Originator Changes

0A0

M0002731 08/24/98

Barbara Lopez

Update MDS: MNLM124-X Rev. 0BL to MNLM124-X Rev. 0A0.

Added WG Package to MDS. Added all required graphics

and thermal data.

0B1

M0003008 12/15/98

Rose Malone

Updated MDS: MNLM124-X Rev. 0A0 to MNLM124-X Rev. 0B1.

Updated Burn-In graphcis for all packages. Update

Pinout for E package. Added Package Weight section.

0B2

1A2

M0003114 05/24/01

M0003809 05/24/01

Rose Malone

Update MDS: MNLM124-X, REV. 0B1 to MNLM124-X, REV.

0B2.

Update MDS: MNLM124-X, Rev. 0B2 to MNLM124-X, Rev.

1A2. Moved Controlling Document infomation to Features

Section. Updated Absolute Maximum Ratings Section.

CHANGED Electrical Section: Isink Conditions FROM: V+

= 15V, Vout = 200V, TO: V+ = 15V, Vout = 200V, +Vin =

0mV, -Vin = +65mV AND: V+ = 15V, Vout = 2V, TO: V+ =

15V, Vout = 2V, +Vin = 0mV, -Vin = +65mV. Isource

Condition FROM: V+ = 15V, Vout = 2V, TO: V+ = 15V,

Vout = 2V, +Vin = 0V, -Vin = -65mV.

LM124E/883 [NSC]

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