DP8520AV-20 [NSC]
DP8520A/DP8521A/DP8522A microCMOS Programmable 256k/1M/4M Video RAM Controller/Drivers; DP8520A / DP8521A / DP8522A microCMOS可编程256K / 1M / 4M显存控制器/驱动器![DP8520AV-20](http://pdffile.icpdf.com/pdf1/p00108/img/icpdf/DP8520A_585847_icpdf.jpg)
型号: | DP8520AV-20 |
厂家: | ![]() |
描述: | DP8520A/DP8521A/DP8522A microCMOS Programmable 256k/1M/4M Video RAM Controller/Drivers |
文件: | 总70页 (文件大小:855K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PRELIMINARY
May 1992
DP8520A/DP8521A/DP8522A microCMOS Programmable
256k/1M/4M Video RAM Controller/Drivers
General Description
Features
Y
On chip high precision delay line to guarantee critical
VRAM access timing parameters
The DP8520A/21A/22A video RAM controllers provide a
low cost, single chip interface between video RAM and all
8-, 16- and 32-bit systems. The DP8520A/21A/22A gener-
ate all the required access control signal timing for VRAMs.
An on-chip refresh request clock is used to automatically
refresh the VRAM array. Refreshes and accesses are arbi-
trated on chip. If necessary, a WAIT or DTACK output in-
serts wait states into system access cycles, including burst
mode accesses. RAS low time during refreshes and RAS
precharge time after refreshes and back to back accesses
are guaranteed through the insertion of wait states. Sepa-
rate on-chip precharge counters for each RAS output can
be used for memory interleaving to avoid delayed back to
back accesses because of precharge. An additional feature
of the DP8522A is two access ports to simplify dual access-
ing. Arbitration among these ports and refresh is done on
chip.
Y
microCMOS process for low power
Y
High capacitance drivers for RAS, CAS, DT/OE and
VRAM address on chip
Y
On chip support for nibble, page and static column
VRAMs
Y
Byte enable signals on chip allow byte writing in a word
size up to 16 bits with no external logic
Y
Selection of controller speeds: 20 MHz and 25 MHz
Y
On board Port A/Port B (DP8522A only)/refresh arbitra-
tion logic
Y
Direct interface to all major microprocessors (applica-
tion notes available)
Y
4 RAS and 4 CAS drivers (the RAS and CAS configura-
tion is programmable)
Largest
VRAM
Direct Drive
Memory
Access
Ports
Ý
Ý
of Pins
of Address
Outputs
Control
(PLCC)
Possible
Capacity
Available
DP8520A
DP8521A
DP8522A
68
68
84
9
256 kbit
1 Mbit
4 Mbit
4 Mbytes
16 Mbytes
64 Mbytes
Single Access Port
10
11
Single Access Port
Dual Access Ports (A and B)
Block Diagram
DP8520A/21A/22A VRAM Controller
TL/F/9338–5
FIGURE 1
TRI-STATEÉ is a registered trademark of National Semiconductor Corporation.
PALÉ is a registered trademark of and is used under license from Monolithic Memories, Inc.
C
1995 National Semiconductor Corporation
TL/F/9338
RRD-B30M105/Printed in U. S. A.
Table of Contents
1.0 INTRODUCTION
7.0 ADDITIONAL ACCESS SUPPORT FEATURES
7.1 Address Latches and Column Increment
7.2 Address Pipelining
2.0 SIGNAL DESCRIPTIONS
2.1 Address, R/W and Programming Signals
2.2 VRAM Control Signals
7.3 Delay CAS During Write Accesses
2.3 Refresh Signals
8.0 RAS AND CAS CONFIGURATION MODES
8.1 Byte Writing
2.4 Port A Access Signals
2.5 Port B Access Signals (DP8522A)
2.6 Common Dual Port Signals (DP8522A)
2.7 Power Signals and Capacitor Input
2.8 Clock Inputs
8.2 Memory Interleaving
8.3 Address Pipelining
8.4 Error Scrubbing
8.5 Page/Burst Mode
3.0 PORT A ACCESS MODES
3.1 Access Mode 0
9.0 PROGRAMMING AND RESETTING
9.1 Mode Load Only Programming
9.2 Chip Selected Access Programming
9.3 External Reset
3.2 Access Mode 1
4.0 REFRESH OPTIONS
9.4 Definition of Programming Bits
4.1 Refresh Control Modes
4.1.1 Automatic Internal Refresh
10.0 TEST MODE
4.1.2 Externally Controlled/Burst Refresh
4.1.3 Refresh Request/Acknowledge
11.0 VRAM CRITICAL TIMING OPTIONS
11.1 Programming Values of t
and t
ASC
RAH
ASC
4.2 Refresh Cycle Types
11.2 Calculation of t
and t
RAH
4.2.1 Conventional Refresh
4.2.2 Staggered Refresh
12.0 DUAL ACCESSING (DP8522A)
12.1 Port B Access Mode
4.2.3 Error Scrubbing Refresh
4.3 Extending Refresh
12.2 Port B Wait State Support
4.4 Clearing the Refresh Address Counter
4.5 Clearing the Refresh Request Clock
12.3 Common Port A and Port B Dual Port Functions
12.3.1 GRANTB Output
12.3.2 LOCK Input
5.0 PORT A WAIT STATE SUPPORT
5.1 WAIT Type Output
13.0 ABSOLUTE MAXIMUM RATINGS
14.0 DC ELECTRICAL CHARACTERISTICS
15.0 AC TIMING PARAMETERS
5.2 DTACK Type Output
5.3 Wait State Support for VRAM Transfer Cycles
5.4 Dynamically Increasing the Number of Wait States
16.0 FUNCTIONAL DIFFERENCES BETWEEN THE
DP8520A/21A/22A AND THE DP8520/21/22
5.5 Guaranteeing RAS Low Time and RAS Precharge
Time
17.0 DP8520A/21A/22A USER HINTS
6.0 DP8520A/21A/22A VIDEO RAM SUPPORT
6.1 Support for VRAM Transfer Cycles
18.0 DESCRIPTION OF A DP8522A/DP8500
SYSTEM INTERFACE
6.2 Support for VRAM Access Cycles through Port A
2
1.0 Introduction
The DP8520A/21A/22A are CMOS Video RAM controllers
that incorporate many advanced features including the ca-
pabilities of address latches, refresh counter, refresh clock,
row, column and refresh address multiplexor, delay line, re-
fresh/access/VRAM transfer cycle arbitration logic and
high capacitive drivers. The programmable system interface
allows any manufacturer’s microprocessor or bus to directly
interface via the DP8520A/21A/22A to VRAM arrays up to
64 Mbytes in size.
asserted and must precede the input VSRL, Video Shift
Register Load, asserting by enough CLK periods to guaran-
tee any access in progress or pending refresh can finish.
VSRL asserting causes DT/OE to transition low immediate-
ly. Both VSRL and DT/OE assert before RAS and CAS as-
sert for the transfer. The cycle is ended by DT/OE negating.
This is caused by either VSRL negating or by four rising
edges of CLK from VSRL asserting, whichever comes first.
The DP8520A/21A/22A have greatly expanded refresh ca-
pabilities compared to other VRAM controllers. There are
three modes of refreshing available. These modes are inter-
nal automatic refreshing, externally controlled/burst re-
freshing, and refresh request/acknowledge refreshing. Any
of these modes can be used together or separately to
achieve the desired results. In any combination of these
modes, the programming of ECAS0 determines the use of
the RFIP (RFRQ) pin. ECAS0 asserted during programming
causes this pin to function as RFIP which will assert just
prior to a refresh cycle and will negate when the refresh is
completed. ECAS0 negated during programming causes
this pin to function as RFRQ which indicates an internal
refresh request when asserted.
After power up, the DP8520A/21A/22A must first be pro-
grammed before accessing the VRAM. The chip is pro-
grammed through the address bus.
There are two methods of programming the chip. The first
method, mode load only, is accomplished by asserting the
signal mode load, ML. A valid programming selection is pre-
sented on the row, column, bank and ECAS inputs, then ML
is negated. When ML is negated, the chip is programmed
with the valid programming bits on the address bus.
The second method, chip selected access, is accomplished
by asserting ML and performing a chip selected access.
When CS and AREQ are asserted for the access, the chip is
programmed. During this programming access, the pro-
gramming bits affecting the wait logic become effective im-
mediately, allowing the access to terminate. After the ac-
cess, ML is negated and the rest of the programming bits
take effect.
When using internal automatic refreshing, the DP8520A/
21A/22A will generate an internal refresh request from the
refresh request clock. The DP8520A/21A/22A will arbitrate
between the refresh requests and accesses. Assuming an
access is not currently in progress, the DP8520A/21A/22A
will grant a refresh, assert RFIP if programmed, and on the
next positive clock edge, refreshing will begin. If an access
had been in progress, the refresh will begin after the access
has terminated.
Once the DP8520A/21A/22A has been programmed, a
60 ms initialization period is entered. During this time, the
DP8520A/21A/22A controllers perform refreshes to the
VRAM array so further VRAM warm up cycles are unneces-
sary.
To use externally controlled/burst refresh, the user disables
the internal refresh request by asserting the input
DISRFRSH. A refresh can now be externally requested by
asserting the input RFSH. The DP8520A/21A/22A will arbi-
trate between the external refresh request and accesses.
Assuming an access is not currently in progress, the
DP8520A/21A/22A will grant a refresh, assert RFIP if pro-
grammed, and on the next positive clock edge, refreshing
will begin. If an access had been in progress, the refresh
would take place after the access has terminated.
The DP8520A/21A/22A can now be used to access the
VRAM. There are two modes of accessing with the control-
ler. The two modes are Mode 0, which initiates RAS syn-
chronously, and Mode 1, which initiates RAS asynchronous-
ly.
To access the VRAM using Mode 0, the signal ALE is as-
serted along with CS to ensure a valid VRAM access. ALE
asserting sets an internal latch and only needs to be pulsed
and not held throughout the entire access. On the next ris-
ing clock edge, after the latch is set, RAS will be asserted
for that access. The DP8520A/21A/22A will place the row
address on the VRAM address bus, guarantee the pro-
grammed value of row address hold time of the VRAM,
place the column address on the VRAM address bus, guar-
antee the programmed value of column address setup time
and assert CAS. AREQ can be asserted anytime after the
clock edge which starts the access RAS. RAS and CAS will
extend until AREQ is negated.
With refresh request/acknowledge mode, the DP8520A/
21A/22A broadcasts the internal refresh request to the sys-
tem through the RFRQ output pin. External circuitry can de-
termine when to refresh the VRAM through the RFSH input.
The controllers have three types of refreshing available:
conventional, staggered and error scrubbing. Any refresh
control mode can be used with any type of refresh. In a
conventional refresh, all of the RAS outputs will be asserted
and negated at once. In a staggered refresh, the RAS out-
puts will be asserted one positive clock edge apart. Error
scrubbing is the same as conventional refresh except that a
CAS will be asserted during a refresh allowing the system to
run that data through an EDAC chip and write it back to
memory, if a single bit error has occurred. The refreshes
can be extended with the EXTEND REFRESH input,
EXTNDRF.
The other access mode, Mode 1, is asynchronous to the
clock. When ADS is asserted, RAS is asserted. The
DP8520A/21A/22A will place the row address on the
VRAM address bus, guarantee the programmed value of
row address hold time, place the column address on the
VRAM address bus, guarantee the programmed value of
column address setup time and assert CAS. AREQ can be
tied to ADS or can be asserted after ADS is asserted. AREQ
negated will terminate the access.
The DP8520A/21A/22A have wait support available as
DTACK or WAIT. Both are programmable. DTACK, Data
Transfer ACKnowledge, is useful for processors whose wait
signal is active high. WAIT is useful for processors whose
The DP8520A/21A/22A also provides full support for
VRAM transfer cycles. To begin the cycle, the input
AVSRLRQ, Advanced Video Shift Register Load Request, is
3
1.0 Introduction (Continued)
wait signal is active low. The user can choose either at pro-
gramming. These signals are used by the on-chip arbitor to
insert wait states to guarantee the arbitration between ac-
cesses and refreshes or precharge. Both signals are inde-
pendent of the access mode chosen.
The DP8522A has all the features previously mentioned.
Unlike the DP8520A/21A, the DP8522A has a second port
to allow a second CPU to access the memory array. This
port, Port B, has two control signals to allow a CPU to ac-
cess the VRAM array. These signals are access request for
Port B, AREQB, and Advanced Transfer ACKnowledge for
Port B, ATACKB. Two other signals are used by both Port A
and Port B for dual accessing purposes. The signals are
lock, LOCK and grant Port B, GRANTB. All arbitration for
the two ports and refresh is done on-chip by the DP8522A
through the insertion of wait states. Since the DP8522A has
only one input address bus, the address lines have to be
multiplexed externally. The signal GRANTB can be used for
this purpose since it is asserted when Port B has access to
the VRAM array and negated when Port A has access to the
VRAM array. Once a port has access to the array, the other
port can be ‘‘locked out’’ by asserting the input LOCK.
AREQB, when asserted, is used by Port B to request an
access. ATACKB, when asserted, signifies that access RAS
has been asserted for the requested Port B access. By us-
ing ATACKB, the user can generate an appropriate WAIT or
DTACK like signal for the Port B CPU.
DTACK will assert a programmed number of clock edges
from the event that starts the access RAS. DTACK will be
negated, when the access is terminated, by AREQ being
negated. DTACK can also be programmed to toggle with
the ECAS inputs during burst/page mode accesses.
WAIT is asserted during the start of the access (ALE and
CS, or ADS and CS) and will negate a number of clock
edges from the event that starts the access RAS. After
WAIT is negated, it will stay negated until the next access.
WAIT can also be programmed to toggle with ECAS inputs
during a burst/page mode access.
Both signals can be dynamically delayed further through the
WAITIN signal to the DP8520A/21A/22A.
The DP8520A/21A/22A have address latches, used to
latch the bank, row and column address inputs. Once the
address is latched, a column increment feature can be used
to increment the column address. The address latches can
also be programmed to be fall through.
The following explains the terminology used in this data
sheet. The terms negated and asserted are used. Asserted
refers to a ‘‘true’’ signal. Thus, ‘‘ECAS0 asserted’’ means
the ECAS0 input is at a logic 0. The term ‘‘COLINC assert-
ed’’ means the COLINC input is at a logic 1. The term negat-
The RAS and CAS drivers can be configured to drive a one,
two or four bank memory array up to 32 bits in width. The
two ECAS signals can then be used to select one pair of
CAS drivers for byte writing with no external logic for sys-
tems with a word length of up to 16 bits.
ed refers to
a ‘‘false’’ signal. Thus, ‘‘ECAS0 negated’’
means the ECAS0 input is at a logic 1. The term ‘‘COLINC
negated’’ means the input COLINC is at a logic 0. The table
shown below clarifies this terminology.
When configuring the DP8520A/21A/22A for more than
one bank, memory interleaving can be used. By tying the
low order address bits to the bank select lines, B0 and B1,
sequential back to back accesses will not be delayed since
the DP8520A/21A/22A have separate precharge counters
per bank. The DP8520A/21A/22A are capable of perform-
ing address pipelining. In address pipelining, the DP8520A/
21A/22A guarantee the column address hold time and
switch the internal multiplexor to place the row address on
the address bus. At this time, another memory access to
another bank can be initiated.
Signal
Action
Asserted
Negated
Asserted
Negated
Logic Level
High
Active High
Active High
Active Low
Active Low
Low
Low
High
4
Connection Diagrams
TL/F/9338–2
Top View
FIGURE 2
Order Number DP8520AV-20 or DP8520AV-25
See NS Package Number V68A
5
Connection Diagrams (Continued)
TL/F/9338–3
Top View
FIGURE 3
Order Number DP8521AV-20 or DP8521AV-25
See NS Package Number V68A
TL/F/9338–4
Top View
FIGURE 4
Order Number DP8522AV-20 or DP8522AV-25
See NS Package Number V84A
6
2.0 Signal Descriptions
Pin
Device (If not
Input/
Description
Name
applicable to all)
Output
2.1 ADDRESS, R/W AND PROGRAMMING SIGNALS
R0–10
R0–9
DP8522A
I
I
ROW ADDRESS: These inputs are used to specify the row address during an
access or refresh to the VRAM or for a VRAM transfer cycle. They are also used
to program the chip when ML is asserted (except R10).
DP8520A/21A
C0–10
C0–9
DP8522A
I
I
COLUMN ADDRESS: These inputs are used to specify the column address
during an access to the VRAM or for a VRAM transfer cycle. They are also used
to program the chip when ML is asserted (except C10).
DP8520A/21A
B0, B1
I
I
BANK SELECT: Depending on programming, these inputs are used to select a
group of RAS and CAS outputs to assert during an access. They are also used to
program the chip when ML is asserted.
ECAS0–1
ENABLE CAS: These inputs are used to enable a single or group of CAS outputs
when asserted. In combination with the B0, B1 and the programming bits, these
inputs select which CAS output or CAS outputs will assert during an access.
ECAS0 must be asserted for either CAS0 or CAS1 to assert during an access.
ECAS1 must be asserted for either CAS2 or CAS3 to assert during an access.
The ECAS signals can also be used to toggle a group of CAS outputs for
page/nibble mode accesses. They also can be used for byte write operations. If
ECAS0 is negated during programming, continuing to assert the ECAS0 while
negating AREQ or AREQB during an access, will cause the CAS outputs to be
extended while the RAS outputs are negated (the ECASn inputs have no effect
during scrubbing refreshes).
WIN
I
WRITE ENABLE IN: This input is used to signify a write operation to the VRAM.
This input asserted will also cause CAS to delay to the next positive clock edge if
address bit C9 is asserted during programming.
COLINC
I
I
COLUMN INCREMENT: When the address latches are used, and a refresh is not
in progress, this input functions as COLINC. Asserting this signal causes the
column address to be incremented by one. When a refresh is in progress, this
signal, when asserted, is used to extend the refresh cycle by any number of
periods of CLK until it is negated.
(EXTNDRF)
ML
I
MODE LOAD: This input signal, when low, enables the internal programming
register that stores the programming information.
2.2 VRAM CONTROL SIGNALS
Q0–10
Q0–9
Q0–8
DP8522A
DP8521A
DP8521A
O
O
O
VRAM ADDRESS: These outputs are the multiplexed output of the R0–9, 10
and C0–9, 10 and form the VRAM address bus. These outputs contain the
refresh address whenever a refresh is in progress. They contain high capacitive
drivers with 20X series damping resistors.
RAS0–3
O
ROW ADDRESS STROBES: These outputs are asserted to latch the row
address contained on the outputs Q0–8, 9, 10 into the VRAM. When a refresh is
in progress, the RAS outputs are used to latch the refresh row address contained
on the Q0–8, 9, 10 outputs in the VRAM. These outputs contain high capacitive
drivers with 20X series damping resistors.
CAS0–3
DT/OE
O
O
COLUMN ADDRESS STROBES: These outputs are asserted to latch the
column address contained on the outputs Q0–8, 9, 10 into the VRAM. These
outputs have high capacitive drivers with 20X series damping resistors.
DATA TRANSFER/OUTPUT ENABLE: This output transitions low before RAS
goes low and transitions high before RAS goes high during a video RAM shift
register load operation (see VSRL pin description). During normal write accesses
this output is held high, and for read accesses this output is asserted after CAS is
asserted, and is negated after CAS negates.
7
2.0 Signal Descriptions (Continued)
Pin
Device (If not
Input/
Description
Name
applicable to all)
Output
2.3 REFRESH SIGNALS
RFIP(RFRQ)
O
REFRESH IN PROGRESS or REFRESH REQUEST: When ECAS0 is asserted
during programming, this output functions as RFIP, and is asserted prior to a
refresh cycle and is negated when all the RAS outputs are negated for that
refresh. When ECAS0 is negated during programming, this output functions as
RFRQ. When asserted, this pin specifies that 13 ms or 15 ms have passed. If
DISRFSH is negated, the DP8520A/21A/22A will perform an internal refresh as
soon as possible. If DISRFRSH is asserted, RFRQ can be used to externally
request a refresh through the input RFSH. This output has a high capacitive
driver and a 20X series damping resistor.
RFSH
I
I
REFRESH: This input asserted with DISRFRSH already asserted will request a
refresh. If this input is continually asserted, the DP8520A/21A/22A will perform
refresh cycles in a burst refresh fashion until the input is negated. If RFSH is
asserted with DISRFSH negated, the internal refresh address counter is cleared
(useful for burst refreshes).
DISRFSH
DISABLE REFRESH: This input is used to disable internal refreshes and must
be asserted when using RFSH for externally requested refreshes.
2.4 PORT A ACCESS
ADS
I
I
ADDRESS STROBE or ADDRESS LATCH ENABLE: Depending on
programming, this input can function as ADS or ALE. In mode 0, the input
functions as ALE and when asserted along with CS causes an internal latch to
be set. Once this latch is set an access will start from the positive clock edge of
CLK as soon as possible. In Mode 1, the input functions as ADS and when
asserted along with CS, causes the access RAS to assert if no other event is
taking place. If an event is taking place, RAS will be asserted from the positive
edge of CLK as soon as possible. In both cases, the low going edge of this signal
latches the bank, row and column address if programmed to do so.
(ALE)
CS
I
I
CHIP SELECT: This input signal must be asserted to enable a Port A access.
AREQ
ACCESS REQUEST: This input signal in Mode 0 must be asserted some time
after the first positive clock edge after ALE has been asserted. When this signal
is negated, RAS is negated for the access. In Mode 1, this signal must be
asserted before ADS can be negated. When this signal is negated, RAS is
negated for the access.
WAIT
O
O
WAIT or DTACK: This output can be programmed to insert wait states into a
CPU access cycle. With R7 negated during programming, the output will function
as a WAIT type output. In this case, the output will be active low to signal a wait
condition. With R7 asserted during programming, the output will function as
DTACK. In this case, the output will be negated to signify a wait condition and will
be asserted to signify the access has taken place. Each of these signals can be
delayed by a number of positive clock edges or negative clock levels of CLK to
increase the microprocessor’s access cycle through the insertion of wait states.
(DTACK)
WAITIN
I
WAIT INCREASE: This input can be used to dynamically increase the number of
positive clock edges of CLK until DTACK will be asserted or WAIT will be
negated during a VRAM access.
2.5 PORT B ACCESS SIGNALS
AREQB
DP8522A
only
I
PORT B ACCESS REQUEST: This input asserted will latch the row, column and
bank address if programmed, and requests an access to take place for Port B. If
the access can take place, RAS will assert immediately. If the access has to be
delayed, RAS will assert as soon as possible from a positive edge of CLK.
ATACKB
DP8522A
only
O
ADVANCED TRANSFER ACKNOWLEDGE PORT B: This output is asserted
when the access RAS is asserted for a Port B access. This signal can be used to
generate the appropriate DTACK or WAIT type signal for Port B’s CPU or bus.
8
2.0 Signal Descriptions (Continued)
Pin
Device (If not
Input/
Description
Name
applicable to all)
Output
2.6 COMMON DUAL PORT SIGNALS
GRANTB
LOCK
DP8522A
only
O
GRANT B: This output indicates which port is currently granted access to the
VRAM array. When GRANTB is asserted, Port B has access to the array. When
GRANTB is negated, Port A has access to the VRAM array. This signal is used to
multiplex the signals R0–8, 9, 10; C0–8, 9, 10; B0–1; WIN; LOCK and ECAS0–1
to the DP8522A when using dual accessing.
DP8522A
only
I
LOCK: This input can be used by the currently granted port to ‘‘lock out’’ the
other port from the VRAM array by inserting wait states into the locked out port’s
access cycle until LOCK is negated.
2.7 VRAM TRANSFER CYCLE SIGNALS
AVSRLRQ
I
I
ADVANCED VIDEO SHIFT REGISTER LOAD REQUEST: This must precede
the VSRL input going low by the amount of time necessary to guarantee that any
currently executing access and pending refresh can finish. This input disables
Port B and refresh requests until four CLK periods after VSRL has transitioned
low. This input may be held low until the video RAM transfer cycle is completed
or may be momentarily pulsed low.
VSRL
VIDEO SHIFT REGISTER LOAD: This input causes the DT/OE output to
transition low immediately. Therefore, when executing a video RAM shift register
load, VSRL transitions low before RAS goes low. The DT/OE output will
transition high from VSRL going high or four CLK periods (rising clock edges)
from VSRL going low, whichever occurs first. VSRL low also disables the WIN
input from affecting the DT/OE logic, until the video shift register load access is
over.
2.8 POWER SIGNALS AND CAPACITOR INPUT
V
I
I
I
POWER: Supply Voltage.
CC
GND
CAP
GROUND: Supply Voltage Reference.
CAPACITOR: This input is used by the internal PLL for stabilization. The value of
the ceramic capacitor should be 0.1 mF and should be connected between this
input and ground.
2.9 CLOCK INPUTS
There are two clock inputs to the DP8520A/21A/22A, CLK and DELCLK. These two clocks may both be tied to the same clock input,
or they may be two separate clocks, running at different frequencies, asynchronous to each other.
CLK
I
SYSTEM CLOCK: This input may be in the range of 0 Hz up to 25 MHz. This
input is generally a constant frequency but it may be controlled externally to
change frequencies or perhaps be stopped for some arbitrary period of time.
This input provides the clock to the internal state machine that arbitrates
between accesses and refreshes. This clock’s positive edges and negative
levels are used to extend the WAIT (DTACK) signals. Ths clock is also used as
the reference for the RAS precharge time and RAS low time during refresh.
All Port A and Port B accesses are assumed to be synchronous to the system
clock CLK.
DELCLK
I
DELAY LINE CLOCK: The clock input DELCLK, may be in the range of 6 MHz to
20 MHz and should be a multiple of 2 (i.e., 6, 8, 10, 12, 14, 16, 18, 20 MHz) to
have the DP8520A/21A/22A switching characteristics hold. If DELCLK is not
one of the above frequencies the accuracy of the internal delay line will suffer.
This is because the phase locked loop that generates the delay line assumes an
input clock frequency of a multiple of 2 MHz.
For example, if the DELCLK input is at 7 MHz and we choose a divide by 3
(program bits C0–2) this will produce 2.333 MHz which is 16.667% off of 2 MHz.
Therefore, the DP8520A/21A/22A delay line would produce delays that are
shorter (faster delays) than what is intended. If divide by 4 was chosen the delay
line would be longer (slower delays) than intended (1.75 MHz instead of 2 MHz).
(See Section 10 for more information.)
This clock is also divided to create the internal refresh clock.
9
3.0 Port A Access Modes
The DP8520A/21A/22A have two general purpose access
modes. With one of these modes, any microprocessor can
be interfaced to VRAM. A Port A access to VRAM is initiated
by two input signals: ADS (ALE) and CS. The access is al-
ways terminated by one signal: AREQ. These input signals
should be synchronous to the input clock, CLK. One of
these access modes is selected at programming through
the B1 input signal. In both modes, once an access has
been requested by CS and ADS (ALE), the DP8522A will
guarantee the following:
Sometime after the first positive edge of CLK after ALE and
CS have been asserted, the input AREQ must be asserted.
In single port applications, once AREQ has been asserted,
CS can be negated. Once AREQ is negated, RAS and
DTACK, if programmed, will be negated. If ECAS0 is assert-
ed during programming, CAS will be negated with AREQ. If
ECAS0 was negated during programming, a single CAS or
group of CASs will continue to be asserted after RAS has
been negated given that the appropriate ECASs inputs were
asserted as shown in Figure 5b. This allows the VRAM to
have data present on the data out bus while gaining RAS
precharge time. ALE can stay asserted several periods of
CLK. However, ALE must be negated before or during the
period of CLK in which AREQ is negated.
The DP8520A/21A/22A will have the row address valid to
the VRAMs’ address bus, Q0–8, 9, 10 given that the row
address setup time to the DP8520A/21A/22A was met;
The DP8520A/21A/22A will bring the appropriate RAS or
RASs low;
When performing address pipelining, the ALE input cannot
be asserted to start another access until AREQ has been
asserted for at least one clock period of CLK for the present
access.
The DP8520A/21A/22A will guarantee the minimum row
address hold time, before switching the internal multiplexor
to place the column address on the VRAM address bus,
Q0–8, 9, 10;
3.2 ACCESS MODE 1
The DP8520A/21A/22A will guarantee the minimum col-
umn address setup time before asserting the appropriate
CAS or CASs;
Access Mode 1, shown inFigure 6a, is selected by asserting
the input B1 during programming. This mode allows access-
es, which are not delayed by precharge, Port B access,
VRAM transfer cycle or refresh, to start immediately from
the access request input, ADS. To initiate a Mode 1 access,
CS is asserted followed by ADS asserted. If the pro-
grammed precharge time from the last access or VRAM
refresh had been met and a refresh of the VRAM, a Port B
access to the VRAM, or a VRAM transfer cycle was not in
progress, the RAS or group of RASs selected by program-
ming and the bank select inputs would be asserted from
ADS being asserted. If a VRAM refresh, a Port B access, or
a VRAM transfer cycle is in progress or precharge time is
required, the controller will wait until these events have tak-
en place and assert RAS or the group of RASs from the
next positive edge of CLK.
The DP8520A/21A/22A will hold the column address valid
the minimum specified column address hold time in address
pipelining mode and will hold the column address valid the
remainder of the access in non-pipelining mode.
The chip includes a WIN pin to signify a write operation to
the DP8520A/21A/22A. When asserted, WIN will cause
CAS to delay to the next positive clock edge if address bit
C9 is asserted during programming. When negated, WIN will
cause the DT/OE output to follow the CAS outputs for a
read access, if ECAS0 is negated during programming. WE,
write enable, must be externally gated from the processor to
the VRAM as there is no output pin from the WIN input pin
available on chip.
When ADS is asserted or sometime after, AREQ must be
asserted. At this time, ADS can be negated and AREQ will
continue the access. Once AREQ is negated, RAS and
DTACK, if programmed, will be negated. If ECAS0 was as-
serted during programming, CAS will be negated with
AREQ. If ECAS0 was negated during programming, a single
CAS or group of CASs will continue to be asserted after
RAS has been negated given that the appropriate ECAS
inputs were asserted as shown in Figure 6b. This allows a
VRAM to have data present on the data out bus while gain-
ing RAS precharge time. ADS can continue to be asserted
after AREQ has been asserted and negated, however a new
access would not be started until ADS is negated and as-
serted again. ADS and AREQ can be tied together in appli-
cations not using address pipelining.
3.1 ACCESS MODE 0
Access Mode 0, shown in Figure 5a, is selected by negating
the input B1 during programming. This access mode allows
accesses to VRAM to always be initiated from the positive
edge of the system input clock, CLK. To initiate a Mode 0
access, ALE is pulsed high and CS is asserted. Pulsing ALE
high and asserting CS, sets an internal latch which requests
an access. If the precharge time from the last access or
VRAM refresh had been met and a refresh of VRAM, a Port
B access, or a VRAM transfer cycle was not in progress, the
RAS or group of RASs would be initiated from the first posi-
tive edge of CLK. If a VRAM refresh is in progress or pre-
charge time is required, the controller will wait until these
events have taken place and assert RAS on the next posi-
tive edge of CLK.
If address pipelining is programmed, it is possible for ADS to
be negated after AREQ is asserted. Once AREQ is assert-
ed, ADS can be asserted again to initiate a new access.
10
3.0 Port A Access Modes (Continued)
TL/F/9338–6
FIGURE 5a. Access Mode 0
TL/F/9338–7
FIGURE 5b. Access Mode 0 Extending CAS
11
3.0 Port A Access Modes (Continued)
TL/F/9338–8
FIGURE 6a. Access Mode 1
TL/F/9338–9
FIGURE 6b. Access Mode 1 Extending CAS
12
4.0 Refresh Options
The DP8520A/21A/22A support a wide variety of refresh
control mode options including automatic internally con-
trolled refresh, externally controlled/burst refresh, refresh
request/acknowledge and any combination of the above.
With each of the control modes above, different types of
refreshes can be performed. These different types include
all RAS refresh, staggered refresh and error scrubbing dur-
ing all RAS refresh.
Pulsing RFSH low, sets an internal latch, that is used to
produce the internal refresh request. The refresh cycle will
take place on the next positive edge of CLK as shown in
Figure 7b. If an access to VRAM is in progress or precharge
time for the last access has not been met, the refresh will be
delayed. Since pulsing RFSH low sets a latch, the user does
not have to keep RFSH low until the refresh starts. When
the last refresh RAS negates, the internal refresh request
latch is cleared.
There are three inputs, EXTNDRF, RFSH and DISRFSH,
and one output, RFIP (RFRQ), associated with refresh.
There are also ten programming bits; R0–1, R9, C0–6 and
ECAS0 used to program the various types of refreshing.
By keeping RFSH asserted past the positive edge of CLK
which ends the refresh cycle as shown in Figure 8, the user
will perform another refresh cycle. Using this technique, the
user can perform a burst refresh consisting of any number
of refresh cycles. Each refresh cycle during a burst refresh
will meet the refresh RAS low time and the RAS precharge
time (programming bits R0–1).
The two inputs, RFSH and DISRFSH, are used in the exter-
nally controlled/burst refresh mode and the refresh re-
quest/acknowledge mode. The output RFRQ is used in the
refresh request/acknowledge mode. The input EXTNDRF is
used in all refresh modes and the output RFIP is used in all
refresh modes except the refresh request/acknowledge
mode. Asserting the input EXTNDRF, extends the refresh
cycle single or multiple integral clock periods of CLK. The
output RFIP is asserted one period of CLK before the first
refresh RAS is asserted. If an access is currently in prog-
ress, RFIP will be asserted up to one period of CLK before
the first refresh RAS, once AREQ or AREQB is negated for
the access (see Figure 7a ).
If the user desires to burst refresh the entire VRAM (all row
addresses) he could generate an end of count signal (burst
refresh finished) by looking at one of the DP8520A/21A/
22A high address outputs (Q7, Q8, Q9 or Q10) and the RFIP
output. The Qn outputs function as a decode of how many
e
row addresses have been refreshed (Q7
e
128 refreshes,
e
refreshes).
e
512 refreshes, Q10 1024
Q8
256 refreshes, Q9
4.1.3 Refresh Request/Acknowledge
The DP8520A/21A/22A will increment the refresh address
counter automatically, independent of the refresh mode
used. The refresh address counter will be incremented once
all the refresh RASs have been negated.
The DP8520A/21A/22A can be programmed to output in-
ternal refresh requests. When the user programs ECAS0
negated during programming, the RFIP output functions as
RFRQ. RFRQ will be asserted from a positive edge of CLK
as shown in Figure 9a. Once RFRQ is asserted, it will stay
asserted until the RFSH is pulsed low with DISRFSH assert-
ed. This will cause an externally requested/burst refresh to
take place. If DISRFSH is negated, an automatic internal
refresh will take place as shown in Figure 9b.
In every combination of refresh control mode and refresh
type, the DP8520A/21A/22A is programmed to keep RAS
asserted a number of CLK periods. The values of RAS low
time during refresh are programmed with the programming
bits R0 and R1.
4.1 REFRESH CONTROL MODES
RFRQ will go high and then assert if additional periods of
the internal refresh clock have expired and neither an exter-
nally controlled refresh nor an automatically controlled inter-
nal refresh have taken place as shown inFigure 9c. If a time
critical event, or long access like page/static column mode
access can not be interrupted, RFRQ pulsing high can be
used to increment a counter. The counter can be used to
perform a burst refresh of the number of refreshes missed
(through the RFSH input).
There are three different modes of refresh control. Any of
these modes can be used in combination or singularly to
produce the desired refresh results. The three different
modes of control are: automatic internal refresh, external/
burst refresh and refresh request/acknowledge.
4.1.1 Automatic Internal Refresh
The DP8520A/21A/22A have an internal refresh clock. The
period of the refresh clock is generated from the program-
ming bits C0–3. Every period of the refresh clock, an inter-
nal refresh request is generated. As long as a VRAM access
is not currently in progress and precharge time has been
met, the internal refresh request will generate an automatic
4.2 REFRESH CYCLE TYPES
Three different types of refresh cycles are available for use.
The three different types are mutually exclusive and can be
used with any of the three modes of refresh control. The
three different refresh cycle types are: all RAS refresh, stag-
gered RAS refresh and error scrubbing during all RAS re-
fresh. In all refresh cycle types, the RAS precharge time is
guaranteed: between the previous access RAS ending and
the refresh RAS0 starting; between refresh RAS3 ending
and access RAS beginning; between burst refresh RASs.
internal refresh. If
a VRAM access is in progress, the
DP8520A/21A/22A on-chip arbitration logic will wait until
the access is finished before performing the refresh. The
refresh/access arbitration logic can insert a refresh cycle
between two address pipelined accesses. However, the re-
fresh arbitration logic can not interrupt an access cycle to
perform a refresh. To enable automatic internally controlled
refreshes, the input DISRFSH must be negated.
4.2.1 Conventional RAS Refresh
A conventional refresh cycle causes RAS0–3 to all assert
from the first positive edge of CLK after RFIP is asserted as
shown in Figure 10. RAS0–3 will stay asserted until the
number of positive edges of CLK programmed have passed.
On the last positive edge, RAS0–3, and RFIP will be negat-
ed. This type of refresh cycle is programmed by negating
address bit R9 during programming.
4.1.2 Externally Controlled/Burst Refresh
To use externally controlled/burst refresh, the user must
disable the automatic internally controlled refreshes by as-
serting the input DISRFSH. The user is responsible for gen-
erating the refresh request by asserting the input RFSH.
13
4.0 Refresh Options (Continued)
TL/F/9338–10
Explanation of Terms
e
RFRQ
ReFresh ReQuest internal to the DP8520A/21A/22A.
RFRQ has the ability to hold off a pending access.
e
RFSH
Externally requested ReFreSH
ReFresh In Progress
e
RFIP
ACIP
e
Port A or Port B (DP8522A only) ACcess In Progress.
This means that either RAS is low for an access or is
in the process of transitioning low for an access.
FIGURE 7a. DP8520A/21A/22A Access/Refresh Arbitration State Program
TL/F/9338–11
FIGURE 7b. Single External Refresh (2 Periods of RAS Low during Refresh Programmed)
14
4.0 Refresh Options (Continued)
TL/F/9338–12
FIGURE 8. External Burst Refresh (2 Periods of RAS Precharge,
2 Periods of Refresh RAS Low during Refresh Programmed)
TL/F/9338–13
FIGURE 9a. Externally Controlled Single and Burst Refresh with Refresh Request (RFRQ) Output
(2 Periods of RAS Low during Refresh Programmed)
TL/F/9338–14
FIGURE 9b. Automatic Internal Refresh with Refresh Request (3T of RAS low during refresh programmed)
*InFigures 9a and9b, where the DP8520A/21A/22A operate in the refresh request/acknowledge mode, the RFIP output pin functions as RFRQ.
An RFIP timing waveform is included in the figure solely for the purpose of simplifying the diagrams.
15
4.0 Refresh Options (Continued)
16
4.0 Refresh Options (Continued)
4.2.2 Staggered RAS Refresh
lows a CAS or group of CASs to assert during the all RAS
refresh as shown in Figure 12. This allows data to be read
from the VRAM array and passed through an Error Detec-
tion And Correction Chip, EDAC. It is important to note that
while an error scrubbing during refresh access is being pe-
formed, it is the system designer’s responsibility to properly
control the WE input of the VRAM. WE should be high dur-
ing the initial access of the VRAM, which could be accom-
plished by gating RFIP, if programmed, with the processor
access circuitry that creates WE. If the EDAC determines
that the data contains a single bit error and corrects that
error, the refresh cycle can be extended with the input ex-
tend refresh, EXTNDRF, and a read-modify-write operation
can be performed, and the corrected data can be written
back to the VRAM by bringing WE low. The DP8522A has a
24-bit internal refresh address counter that contains the 11
row, 11 column and 2 bank addresses. The DP8520A/21A
have a 22-bit internal refresh address counter that contains
the 10 row, 10 column and 2 bank addresses. These coun-
ters are configured as bank, column, row with the row ad-
dress as the least significant bits. The bank counter bits are
then used with the programming selection to determine
which CAS or group of CASs will assert during a refresh.
A staggered refresh staggers each RAS or group of RASs
by a positive edge of CLK as shown in Figure 11. The num-
ber of RASs, which will be asserted on each positive edge
of CLK, is determined by the RAS, CAS configuration mode
programming bits C4–C6. If single RAS outputs are select-
ed during programming, then each RAS will assert on suc-
cessive positive edges of CLK. If two RAS outputs are se-
lected during programming then RAS0 and RAS1 will assert
on the first positive edge of CLK after RFIP is asserted.
RAS2 and RAS3 will assert on the second positive edge of
CLK after RFIP is asserted. If all RAS outputs were selected
during programming, all RAS outputs would assert on the
first positive edge of CLK after RFIP is asserted. Each RAS
or group of RASs will meet the programmed RAS low time
and then negate.
4.2.3 Error Scrubbing during Refresh
The DP8520A/21A/22A support error scrubbing during all
RAS VRAM refreshes. Error scrubbing during refresh is se-
lected through bits C4–C6 with bit R9 negated during pro-
gramming. Error scrubbing can not be used with staggered
refresh (see Section 9.0). Error scrubbing during refresh al-
TL/F/9338–18
FIGURE 12. Error Scrubbing during Refresh
17
4.0 Refresh Options (Continued)
4.3 EXTENDING REFRESH
ry array. By asserting RFSH one period of CLK before
DISRFSH is asserted and then keeping both inputs assert-
ed, the DP8520A/21A/22A will clear the refresh address
counter and then perform refresh cycles separated by the
programmed value of precharge as shown in Figure 14b. An
end-of-count signal can be generated from the Q VRAM
address outputs of the DP8520A/21A/22A and used to ne-
gate RFSH.
The programmed number of periods of CLK that refresh
RASs are asserted can be extended by one or multiple peri-
ods of CLK. Only the all RAS (with or without error scrub-
bing) type of refresh can be extended. To extend a refresh
cycle, the input extend refresh, EXTNDRF, must be assert-
ed before the positive edge of CLK that would have negated
all the RAS outputs during the refresh cycle and after the
positive edge of CLK which starts all RAS outputs during the
refresh as shown inFigure 13. This will extend the refresh to
the next positive edge of CLK and EXTNDRF will be sam-
pled again. The refresh cycle will continue until EXTNDRF is
sampled low on a positive edge of CLK.
4.5 CLEARING THE REFRESH REQUEST CLOCK
The refresh request clock can be cleared by negating
DISRFSH and asserting RFSH for 500 ns, one period of the
internal 2 MHz clock as shown in Figure 15. By clearing the
refresh request clock, the user is guaranteed that an inter-
nal refresh request will not be generated for approximately
15 ms, one refresh clock period, from the time RFSH is neg-
ated. This action will also clear the refresh address counter.
4.4 CLEARING THE REFRESH ADDRESS COUNTER
The refresh address counter can be cleared by asserting
RFSH while DISRFSH is negated as shown in Figure 14a.
This can be used prior to a burst refresh of the entire memo-
TL/F/9338–19
FIGURE 13. Extending Refresh with the Extend Refresh (EXTNDRF) Input
TL/F/9338–20
FIGURE 14a. Clearing the Refresh Address Counter
TL/F/9338–21
FIGURE 14b. Clearing the Refresh Counter during Burst
TL/F/9338–22
FIGURE 15. Clearing the Refresh Request Clock Counter
18
5.0 Port A Wait State Support
Wait states allow a CPU’s access cycle to be increased by
one or multiple CPU clock periods. The wait or ready input is
named differently by CPU manufacturers. However, any
CPU’s wait or ready input is compatible with either the WAIT
or DTACK output of the DP8520A/21A/22A. The user de-
termines whether to program WAIT or DTACK (R7) and
which value to select for WAIT or DTACK (R2, R3) depend-
ing upon the CPU used and where the CPU samples its wait
input during an access cycle.
asserted by the CPU, wait states (extra clock periods) are
inserted into the current access cycle as shown in Figure
16. Once WAIT is sampled negated, the access cycle is
completed by the CPU. WAIT is asserted at the beginning of
a chip selected access and is programmed to negate a
number of positive edges and/or negative levels of CLK
from the event that starts the access. WAIT can also be
programmed to function in page/burst mode applications.
Once WAIT is negated during an access, and the ECAS
inputs are negated with AREQ asserted, WAIT can be pro-
grammed to toggle, following the ECAS inputs. Once AREQ
is negated, ending the access, WAIT will stay negated until
the next chip selected access. For more details about WAIT
Type Output, see Application Note AN-773.
The decision to terminate the CPU access cycle is directly
affected by the speed of the VRAMs used. The system de-
signer must ensure that the data from the VRAMs will be
present for the CPU to sample or that the data has been
written to the VRAM before allowing the CPU access cycle
to terminate.
5.2 DTACK TYPE OUTPUT
The insertion of wait states also allows a CPU’s access cy-
cle to be extended until the VRAM access has taken place.
The DP8520A/21A/22A insert wait states into CPU access
cycles due to; guaranteeing precharge time, refresh current-
ly in progress, user programmed wait states, the WAITIN
signal being asserted and GRANTB not being valid
(DP8522A only). If one of these events is taking place and
the CPU starts an access, the DP8520A/21A/22A will insert
wait states into the access cycle, thereby increasing the
length of the CPU’s access. Once the event has been com-
pleted, the DP8520A/21A/22A will allow the access to take
place and stop inserting wait states.
With the R7 address bit asserted during programming, the
user selects the DTACK type output. As long as DTACK is
sampled negated by the CPU, wait states are inserted into
the current access cycle as shown in Figure 17. Once
DTACK is sampled asserted, the access cycle is completed
by the CPU. DTACK, which is normally negated, is pro-
grammed to assert a number of positive edges and/or neg-
ative levels from the event that starts RAS for the access.
DTACK can also be programmed to function during page/
burst mode accesses. Once DTACK is asserted and the
ECAS inputs are negated with AREQ asserted, DTACK can
be programmed to negate and assert from the ECAS inputs
toggling to perform a page/burst mode operation. Once
AREQ is negated, ending the access, DTACK will be negat-
ed and stays negated until the next chip selected access.
For more details about DTACK Type Output, see Applica-
tion Note AN-773.
There are six programming bits, R2–R7; an input, WAITIN;
and an output that functions as WAIT or DTACK.
5.1 WAIT TYPE OUTPUT
With the R7 address bit negated during programming, the
user selects the WAIT output. As long as WAIT is sampled
TL/F/9338–23
FIGURE 16. WAIT Type Output
TL/F/9338–44
FIGURE 17. DTACK Type Output
19
5.0 Port A Wait State Support (Continued)
5.3 WAIT STATE SUPPORT FOR VIDEO RAM SHIFT
REGISTER LOAD OPERATIONS FOR PORT A
will then insert wait states into the transfer cycle. The trans-
fer cycle is completed from either VSRL negating or four
clocks from VSRL asserting. The first event of these two to
take place causes WAIT to negate (DTACK to assert) imme-
diately or one half system clock period later, depending on
how the user had programmed WAIT to end (DTACK to
start) during a non-burst type of access. The wait logic is
intimately connected to the DP8520A/21A/22A graphics
functions and the WAIT output functions the same as the
DT/OE output (see Figure 18 ).
If using the DP8520A/21A/22A in a system using video
VRAMs, the CPU that controls loading the Video RAM shift
register must be connected to Port A. The input AVSRLRQ
asserts, signaling an advanced request for a Video RAM
shift register load operation. Sometime later, the input VSRL
asserts, signifying that the transfer cycle has started, and
this action causes the DT/OE output to transfer low. VSRL
asserting also asserts WAIT (keeps DTACK negated) and
TL/F/9338–74
FIGURE 18. Wait State Timing during a VRAM Transfer Cycle (WAIT
Programmed as OT, WAIT Sampled at the ‘‘T3’’ Rising Clock Edge)
20
5.0 Port A Wait State Support (Continued)
5.4 DYNAMICALLY INCREASING THE NUMBER OF
WAIT STATES
5.5 GUARANTEEING RAS LOW TIME AND RAS
PRECHARGE TIME
The user can increase the number of positive edges of CLK
before DTACK is asserted or WAIT is negated. With the
input WAITIN asserted, the user can delay DTACK asserting
or WAIT negating either one or two more positive edges of
CLK. The number of edges is programmed through address
bit R6. If the user is increasing the number of positive edges
in a delay that contains a negative level, the positive edges
will be met before the negative level. For example if the user
programmed DTACK of (/2T, asserting WAITIN, pro-
grammed as 2T, would increase the number of positive edg-
es resulting in DTACK of 2(/2T as shown in Figure 19. Simi-
larly, WAITIN can increase the number of positive edges in
a page/burst access. WAITIN can be permanently asserted
in systems requiring an increased number of wait states.
WAITIN can also be asserted and negated, depending on
the type of access. As an example, a user could invert the
WRITE line from the CPU and connect the output to
WAITIN. This could be used to perform write accesses with
1 wait state and read accesses with 2 wait states as shown
in Figure 20.
The DP8520A/21A/22A will guarantee RAS precharge time
between accesses; between refreshes; and between ac-
cess and refreshes. The programming bits R0 and R1 are
used to program combinations of RAS precharge time and
RAS low time referenced by positive edges of CLK. RAS
low time is programmed for refreshes only. During an ac-
cess, the system designer guarantees the time RAS is as-
serted through the DP8520A/21A/22A wait logic. Since in-
serting wait states into an access increases the length of
the CPU signals which are used to create ADS or ALE and
AREQ, the time that RAS is asserted can be guaranteed.
Precharge time is also guaranteed by the DP8520A/21A/
22A. Each RAS output has a separate positive edge of CLK
counter. AREQ is negated setup to a positive edge of CLK
to terminate the access. That positive edge is 1T. The next
positive edge is 2T. RAS will not be asserted until the pro-
grammed number of positive edges of CLK have passed as
shown in Figure 21. Once the programmed precharge time
has been met, RAS will be asserted from the positive edge
of CLK. However, since there is a precharge counter per
RAS, an access using another RAS will not be delayed.
Precharge time before a refresh is always referenced from
the access RAS negating before RAS0 for the refresh as-
serting. After a refresh, precharge time is referenced from
RAS3 negating, for the refresh, to the access RAS assert-
ing.
TL/F/9338–75
FIGURE 19. WAITIN Example (DTACK is Sampled at the ‘‘T3’’ Falling Clock Edge)
21
5.0 Port A Wait State Support (Continued)
TL/F/9338–76
FIGURE 20. WAITIN Example (WAIT is Sampled at the End of ‘‘T2’’)
TL/F/9338–77
FIGURE 21. Guaranteeing RAS Precharge (DTACK is Sampled at the ‘‘T2’’ Falling Clock Edge)
22
6.0 DP8520A/21A/22A
Video RAM Support
The DP8520A/21A/22A provides full support for all access
modes of video RAMs through the addition of three pins
(AVSRLRQ, VSRL, and DT/OE) to the standard
DP8420A/21A/22A. The access modes of video RAMs can
be split up into two groups; video RAM transfer cycles (read
with the serial port in active or in standby mode, write, and
pseudo write transfer cycles), and non-transfer cycles. The
DP8520A/21A/22A support of video RAMs allows the full
capabilities of the National Semiconductor Advanced
Graphics chip set (DP8500 Series) to be realized. See Fig-
ures 22, 23, and 58a.
TL/F/9338–52
FIGURE 22. The Video RAM (A Dual Ported Memory)
Ideal solution for graphics frame buffer. Screen refresh
can occur at the same time as random access to the
frame buffer for screen update and manipulation.
TL/F/9338–56
FIGURE 23. The DP8500 Raster Graphics Processor Interfaced to the DP8520A/21A/22A Video RAM Controller
23
6.0 DP8520A/21A/22A Video RAM Support (Continued)
6.1 SUPPORT FOR VRAM TRANSFER CYCLES
(TO THE SERIAL PORT OF THE VRAM)
completed. Figure 23 shows the case of an externally re-
quested refresh being disabled, because of previous
a
AVSRLRQ, until the VRAM shift register load has been
completed.
The DP8520A/21A/22A supports VRAM transfer cycles
with the serial port in the active or standby mode. Active or
standby refers to whether data is or is not currently being
shifted in or out of the VRAM serial port (i.e., whether the
shift clock (SCLK) is currently active). The DP8520A/
21A/22A support for data transfer cycles with the serial port
in the active mode includes the ability to support transfer
cycles with the serial port in the standby mode. Hereafter,
the term VRAM transfer cycle means VRAM transfer cycle
with the serial port in the active mode.
The VSRL input causes the DT/OE output to assert immedi-
ately, regardless of what else may be happening in the
DP8520A/21A/22A. Therefore, it is the system designer’s
responsibility to guarantee that all pending accesses have
been completed by the time the VSRL input asserts. The
system designer can guarantee this by issuing AVSRLRQ
far enough in advance to guarantee that all pending access-
es have been completed by the time VSRL asserts.
In order to support VRAM transfer cycles, the DP8520A/
21A/22A must be able to guarantee timing with respect to
its input CLK (which must be synchronous to VRAM shift
clock), RAS, CAS, and DT/OE. Figure 23 shows the timing
The AVSRLRQ input does not override the LOCK input (see
Section 12.0) for dual port systems, and as a result, the
designer must also guarantee that Port A can be accessed
by assuring that GRANTB and LOCK are both not asserted
when AVSRLRQ is asserted.
of
a
graphics
memory
system
where
the
DP8520A/21A/22A is being used with the National Semi-
conductor DP8500 Raster Graphics Processor (RGP). If the
DP8520A/21A/22A is being used in a graphics frame buffer
application, it has the ability to support a VRAM transfer
cycle during active video time (ex. mid scan line). This is one
of the very attractive features supported by the National
Semiconductor Advanced Graphics chip set. Most of the
commercial graphics controller chip sets available will only
support VRAM transfer cycles during blanking periods
(while the VRAM is in standby mode).
Generally, the VSRL is the status of the upcoming access
cycle (of the graphics processor). Therefore, this input pre-
cedes the inputs ADS and AREQ that execute the VRAM
shift register load transfer cycle. This sequence of events
guarantees the correct relationship of DT/OE, RAS and
CAS (DT preceding RAS and CAS when asserting and neg-
ating). The wait logic is also intimately connected to the
graphics functions on the DP8520A/21A/22A. The DT/OE
(and WAIT/DTACK) relationship to VSRL during a VRAM
transfer cycle depends upon how the DP8520A/21A/22A
was programmed with respect to the ECAS0 input. If ECAS0
was negated during programming, the DT/OE output will
follow the VSRL input. If ECAS0 was asserted during pro-
gramming, the DT/OE output will follow VSRL asserting.
DT/OE will then negate either when VSRL negates or from
the fourth rising clock edge after VSRL asserted, whichever
event takes place first. This allows DT to negate before
RAS and CAS negate, thus guaranteeing the correct timing
relationship during the transfer cycle (see Figure 23 ). The
WE input of the VRAM determines whether the access is a
read or write transfer cycle (see Figures 24 and 25 respec-
tively).
The DP8520A/21A/22A supports VRAM transfer cycles
during active video time by being able to guarantee an exact
instant during which the transfer of VRAM data to the VRAM
shift register will occur. This exact instant can be guaran-
teed through the AVSRLRQ and VSRL inputs.
The input AVSRLRQ disables any further internally or exter-
nally requested refreshes or Port B access requests from
being executed. The AVSRLRQ input does this by making
the VRAM controller arbitration logic think that a Port A ac-
cess is in progress from the point where the AVSRLRQ in-
put asserts until the VRAM shift register load operation is
24
6.0 DP8520A/21A/22A Video RAM Support (Continued)
TL/F/9338–78
FIGURE 24. Video RAM Timing READ Transfer Cycle, B Port Active
(Transfer VRAM Row Data into Shift Register)
TL/F/9338–55
FIGURE 25. Video RAM Timing WRITE Transfer Cycle, B Port Active
(Transfer Shift Register Data into VRAM Row)
25
6.0 DP8520A/21A/22A Video RAM Support (Continued)
During a transfer cycle (VSRL asserted during the access)
WIN is disabled from affecting the DT/OE logic until the
transfer cycle is completed as shown by CAS negating. Dur-
ing a transfer cycle, the SOE (Serial Output Enable) input to
the VRAM is asserted and is used as an output control for a
read transfer cycle and is used as a write enable control
during a write transfer cycle. When SOE is negated, serial
access is disabled, and a transfer cycle cannot take place.
SOE asserted during a read enables the serial input/output
bus SI/O (0–3) while the VRAM data bus (DQ0–3) is put
into a high impedance state, thus allowing the transfer cycle
to take place from the serial port. In addition to both read
and write transfer cycles, the DP8520A/21A/22A also sup-
ports pseudo write transfer cycles (see Figure 26 ). A pseu-
do write transfer cycle must be performed after a read trans-
fer cycle if the subsequent operation is a write transfer cy-
cle. The DP8520A/21A/22A VRAM controller is operated
as if it is doing a write transfer cycle, but since the SOE input
to the VRAM is negated (disabling the serial port), a transfer
doesn’t take place. The purpose of this pseudo write trans-
fer cycle is to switch the SI/O (0–3) lines of the VRAM’s
serial port from output mode to input mode.
TL/F/9338–79
FIGURE 26. Video RAM Timing Pseudo WRITE Transfer Cycle, B Port Active
(Transfer Shift Register Data into VRAM Row)
26
6.0 DP8520A/21A/22A Video RAM Support (Continued)
6.2 SUPPORT FOR VRAM ACCESS CYCLES THROUGH
PORT A USING THE DP8520A/21A/22A
be negated for a read access once CASn is negated (see
Figure 28 ), causing the VRAM outputs to be enabled. If
CASn toggles during a page mode read access, then the
DT/OE logic will also toggle following the CASn input.
With the DP8520A/21A/22A, the output DT/OE will remain
negated during write accesses (see Figure 27 ), but during
read accesses it will assert after CASn asserts. DT/OE will
TL/F/9338–54
FIGURE 27. Video RAM Random Access Write Cycle
TL/F/9338–53
FIGURE 28. Video RAM Random Access Read Cycle
27
7.0 Additional Access Support Features
To support the different modes of accessing, the DP8520A/
21A/22A have multiple access features. These features al-
low the user to take advantage of CPU or VRAM functions.
These additional features include: address latches and col-
umn increment for page/burst mode support; address pipe-
lining to allow a new access to start to a different bank of
VRAM after CAS has been asserted and the column ad-
dress hold time has been met; and delay CAS, to allow the
user with a multiplexed bus to ensure valid data is present
before CAS is asserted.
For Port B, if GRANTB is asserted, the address will be
latched with AREQB asserted. If GRANTB is negated, the
address will latch on the first or second positive edge of
CLK after GRANTB is asserted depending on the program-
ming bits R0, R1.
7.2 ADDRESS PIPELINING
Address pipelining is the overlapping of accesses to differ-
ent banks of VRAM. If the majority of successive accesses
are to a different bank, the accesses can be overlapped.
Because of this overlapping, the cycle time of the VRAM
accesses are greatly reduced. The DP8520A/21A/22A can
be programmed to allow a new row address to be placed on
the VRAM address bus after the column address hold time
has been met. At this time, a new access can be initiated
with ADS or ALE, depending on the access mode, while
AREQ is used to sustain the current access. The DP8522A
supports address pipelining for Port A only. This mode can
not be used with page, static column or nibble modes of
operations because the VRAM column address is switched
back to the row address after CAS is asserted. This mode is
programmed through address bit R8 (see Figures 30 and
31 ).
7.1 ADDRESS LATCHES AND COLUMN INCREMENT
The address latches can be programmed, through program-
ming bit B0, to either latch the address or remain perma-
nently in fall-through mode. If the address latches are used
to latch the address, the rising edge of ALE in Mode 0
places the latches in fall-through. Once ALE is negated, the
address present on the row, column and bank inputs is
latched. In Mode 1, the address latches are in fall-through
mode until ADS is asserted. ADS asserted latches the ad-
dress.
Once the address is latched, the column address can be
incremented with the input COLINC. With COLINC asserted,
the column address is incremented. If COLINC is asserted
with all of the bits of the column address asserted, the col-
umn address will return to zero. COLINC can be used for
sequential accesses of static column VRAMs. COLINC can
also be used with the ECAS inputs to support sequential
accesses to page mode VRAMs as shown in Figure 29.
COLINC should only be asserted when a refresh is not in
progress as indicated by RFIP, if programmed, being ne-
gated during an access since this input functions as an ex-
tend refresh when a refresh is in progress.
During address pipelining in Mode 0, shown in Figure 32,
ALE cannot be pulsed high to start another access until
AREQ has been asserted for the previous access for at
least one period of CLK. DTACK, if programmed, will be
negated once AREQ is negated. WAIT, if programmed to
insert wait states, will be asserted once ALE and CS are
asserted.
In Mode 1, shown in Figure 33, ADS can be negated once
AREQ is asserted. After meeting the minimum negated
pulse width for ADS, ADS can again be asserted to start a
new access. DTACK, if programmed, will be negated once
AREQ is negated. WAIT, if programmed, will be asserted
once ADS is asserted.
The address latches function differently with the DP8522A.
The DP8522A will latch the address of the currently granted
port. If Port A is currently granted, the address will be
latched as described in Section 7.1. If Port A is not granted,
and requests an access, the address will be latched on the
first or second positive edge of CLK after GRANTB has
been negated depending on the programming bits R0, R1.
In either mode with either type of wait programmed, the
DP8520A/21A/22A will still delay the access for precharge
if sequential accesses are to the same bank or if a refresh
takes place.
28
7.0 Additional Access Support Features (Continued)
TL/F/9338–80
FIGURE 29. Column Increment
TL/F/9338–81
FIGURE 30. Non-Address Pipelined Mode
TL/F/9338–82
FIGURE 31. Address Pipelined Mode
29
7.0 Additional Access Support Features
30
7.0 Additional Access Support Features
7.3 DELAY CAS DURING WRITE ACCESSES
VRAM will be setup to CAS asserting as shown in Figures
34 and 35. If the possibility exists that data still may not be
present after the first positive edge of CLK, CAS can be
delayed further with the ECAS inputs. If address bit C9 is
negated during programming, read and write accesses will
be treated the same (with regard to CAS).
Address bit C9 asserted during programming will cause CAS
to be delayed until the first positive edge of CLK after RAS
is asserted when the input WIN is asserted. Delaying CAS
during write accesses ensures that the data to be written to
TL/F/9338–85
FIGURE 34. Mode 0 Delay CAS
TL/F/9338–86
FIGURE 35. Mode 1 Delay CAS
31
8.0 RAS and CAS Configuration Modes
The DP8520A/21A/22A allow the user to configure the
VRAM array to contain one, two or four banks of VRAM.
Depending on the functions used, certain considerations
must be used when determining how to set up the VRAM
array. Programming address bits C4, C5 and C6 along with
bank selects, B0–1, and CAS enables, ECAS0–1, deter-
mine which RAS or group of RASs and which CAS or group
of CASs will be asserted during an access. Different memo-
ry schemes are described. The DP8520A/21A/22A is spec-
ified driving a heavy load of 72 VRAMs, representing four
banks of VRAM with 16-bit words and 2 parity bits. The
DP8520A/21A/22A can drive more than 72 VRAMs, but the
AC timing must be increased. Since the RAS and CAS out-
puts are configurable, all RAS and CAS outputs should be
used for the maximum amount of drive.
8.1 BYTE WRITING
By selecting a configuration in which all CAS outputs are
selected during an access, each ECAS input enables a pair
of CAS outputs to select a byte in a word size of up to 16
bits. In this case, the RAS outputs are used to select which
of up to 4 banks is to be used as shown in Figures 36 and
37. The user can also configure the VRAM array into an 8
bank system as shown in Figure 38. This setup can be used
along with byte writing for an 8-bit system if the LOW BYTE
and HIGH BYTE are connected to ECAS0 and ECAS1 re-
spectively. The user can connect upper address bits to
ECAS0,1 for use in an 8 bank–16-bit system, but cannot
use byte writing in this case.
TL/F/9338–88
e
FIGURE 36. VRAM Array Setup for 16-Bit System (C6, C5, C4
1, 1, 0 during Programming)
32
8.0 RAS and CAS Configuration Modes (Continued)
TL/F/9338–87
e
0, 1, 1 No Error Scrubbing during Programming)
FIGURE 37. VRAM Array Setup for 16-Bit, 1 Bank System (C6, C5, C4
e
0, 0, 0 Allowing Error Scrubbing
or C6, C5, C4
TL/F/9338–89
e
FIGURE 38. 8 Bank VRAM Array (C6, C5, C4
1, 1, 0 during Programming)
33
8.0 RAS and CAS Configuration Modes (Continued)
8.2 MEMORY INTERLEAVING
8.3 ADDRESS PIPELINING
Memory interleaving allows the cycle time of VRAMs to be
reduced by having sequential accesses to different memory
banks. Since the DP8520A/21A/22A have separate pre-
charge counters per bank, sequential accesses will not be
delayed if the accessed banks use different RAS outputs.
To ensure different RAS outputs will be used, a mode is
selected where either one or two RAS outputs will be as-
serted during an access. The bank select or selects, B0 and
B1, are then tied to the least significant address bits, caus-
ing a different group of RASs to assert during each sequen-
tial access as shown in Figure 39. In this figure there should
be at least one clock period of all RAS’s negated between
different RAS’s being asserted to avoid the condition of a
CAS before RAS refresh cycle.
Address pipelining allows several access RASs to be as-
serted at once. Because RASs can overlap, each bank re-
quires either a mode where one RAS and one CAS are used
per bank as shown in Figure 40 or where two RASs and two
CASs are used per bank as shown in Figure 41. In order to
perform byte writing while using address pipelining, external
gating on the CAS outputs must be used. If the array is not
layed out this way, a CAS to a bank can be low before RAS,
which will cause a refresh of the VRAM, not an access. To
take full advantage of address pipelining, memory interleav-
ing is used. To memory interleave, the least significant ad-
dress bits should be tied to the bank select inputs to ensure
that all ‘‘back to back’’ sequential accesses are not delayed,
since different memory banks are accessed.
TL/F/9338–90
e
FIGURE 39. Memory Interleaving with Byte Writing Capability (C6, C5, C4
1, 1, 0 during Programming)
34
8.0 RAS and CAS Configuration Modes (Continued)
TL/F/9338–91
e
0, 1, 0 (Also Allowing Error Scrubbing) during Programming)
FIGURE 40. VRAM Array Setup for 4 Banks Using Address Pipelining (C6, C5, C4
e
1, 1, 1
or C6, C5, C4
TL/F/9338–92
e
0, 0, 1 (Also Allowing Error Scrubbing) during Programming)
FIGURE 41. VRAM Array Setup for Address Pipelining with 2 Banks (C6, C5, C4
e
1, 0, 1
or C6, C5, C4
8.4 ERROR SCRUBBING
In error scrubbing during refresh, the user selects one, two
or four RAS and CAS outputs per bank. When performing
error detection and correction, memory is always accessed
as words. Since the CAS signals are not used to select
individual bytes, their corresponding ECAS inputs can be
tied low as shown in Figures 42 and 43.
TL/F/9338–93
e
FIGURE 42. VRAM Array Setup for 4 Banks Using Error Scrubbing (C6, C5, C4
0, 1, 0 during Programming)
TL/F/9338–94
e
FIGURE 43. VRAM Array Setup for Error Scrubbing with 2 Banks (C6, C5, C4
0, 0, 1 during Programming)
35
8.0 RAS and CAS Configuration Modes (Continued)
8.5 PAGE/BURST MODE
The ECAS inputs may then be toggled with the DP8520A/
21A/22A’s address latches in fall-through mode, while
AREQ is asserted. The ECAS inputs can also be used to
select individual bytes. When using nibble mode VRAMS,
the third and fourth address bits can be tied to the bank
select inputs to perform memory interleaving. In page or
static column modes, the two address bits after the page
size can be tied to the bank select inputs to select a new
bank if the page size is exceeded.
In a static column, page or burst mode system, the least
significant bits must be tied to the column address in order
to ensure that the page/burst accesses are to sequential
memory addresses, as shown inFigure 44. In a nibble mode
system, the two least significant address bits (A2, A3) must
be tied to the highest row and column address inputs (de-
pends on VRAM size) to ensure that the toggling bits of
nibble mode VRAMs are to sequential memory addresses.
TL/F/9338–95
*See table below for row, column & bank address bit map. A0,A1 are used for byte addressing in this example.
Page Mode/Static Column Mode Page Size
256 Bits/Page 512 Bits/Page 1024 Bits/Page 2048 Bits/Page
Addresses
Nibble Mode*
e
e
e
e
A2–10 C0–9 A2–11
Column
Address
R9, C9
A2, A3 C0–7
A2–9 C0–8
e
C0–10
A2–12
e
e
e
e
C10 X
C0–8
X
C8–10
X
C9,10
X
Row
X
X
X
X
X
Address
B0
B1
A4
A5
A10
A11
A11
A12
A12
A13
A13
A14
*Assuming 1 M-bit Vrams are being used.
Assume that the least significant address bits are used for byte addressing. Given a 32-bit system A0,A1 would be
used for byte addressing.
e
X
DON’T CARE, the user can do as he pleases.
FIGURE 44. Page, Static Column, Nibble Mode System
36
9.0 Programming and Resetting
The DP8520A/21A/22A must be programmed by one of
two possible programming sequences before it can be used.
After power up, the DP8520A/21A/22A must be externally
reset (see External Reset) before programming. After pro-
gramming, the DP8520A/21A/22A enters a 60 ms initializa-
tion period. During this initialization period, the DP8520A/
21A/22A performs refreshes about every 15 ms; this makes
further VRAM warmup cycles unnecessary. The chip can be
programmed as many times as the user wishes. After the
first programming, the 60 ms initialization period will not be
entered into unless the chip is reset. Refreshes occur during
the 60 ms initialization period. If ECAS0 was asserted during
programming, the RFIP (RFRQ) pin will act as RFIP and will
be asserted throughout the initialization period, otherwise
the pin will act like RFRQ and toggle every 13 ms–15 ms in
conjunction with internal refresh requests. If the user at-
tempts an access during the initialization period, wait states
will be inserted into the access cycle until the initialization
period is complete and RAS precharge time has been met.
The actual initialization time period is given by the following
formula:
9.1 MODE LOAD ONLY PROGRAMMING
MODE LOAD, ML, asserted enables an internal 23-bit pro-
grammable register. To use this method, the user asserts
ML, enabling the internal programming register. After ML is
asserted, a valid programming selection is placed on the
address bus (and ECAS0), then ML is negated. When ML is
negated, the value on the address bus (and ECAS0) is
latched into the internal programming register and the
DP8520A/21A/22A is programmed, as shown in Figure 45.
After ML is negated, the DP8520A/21A/22A will enter the
60 ms initialization period only if this is the first programming
after power up or reset.
Using this method, a set of transceivers on the address bus
can be put at TRI-STATE by the system reset signal. A
É
combination of pull-up and pull-down resistors can be used
on the address inputs of the DP8520A/21A/22A to select
the programming values, as shown in FIgure 46.
9.2 CHIP SELECTED ACCESS PROGRAMMING
The chip can also be programmed by asserting ML and per-
forming a chip selected access. ADS (or ALE) is disabled
internally until after programming. To program the chip using
this method, ML is asserted. After ML is asserted, CS is
asserted and a valid programming selection is placed on the
address bus. When AREQ is asserted, the chip is pro-
grammed with the programming selection on the address
bus. After AREQ is negated, ML can be negated as shown
in Figure 47.
e
T
4096*(Clock Divisor Select)
*(Refresh Clock Fine Tune)
/(DELCK Frequency)
TL/F/9338–96
FIGURE 45. Mode Load Only Programming
TL/F/9338–97
*Pull-Up or Pull-Down Resistors on Each Address Input
FIGURE 46. Programming during System Reset
37
9.0 Programming and Resetting (Continued)
TL/F/9338–98
FIGURE 47. CS Access Programming
Using this method, various programming schemes can be
used. For example if extra upper address bits are available,
an unused high order address bit can be tied to the signal
ML. Using this method, one need only write to a page of
memory, thus asserting the high order bit and in turn pro-
gramming the chip as shown in Figure 48.
TL/F/9338–A0
FIGURE 49. Programming the DP8520A/21A/22A
through the Address Bus and an I/O Port
TL/F/9338–99
FIGURE 48. Programming the DP8520A/21A/22A
through the Address Bus Only
Another simple way the chip can be programmed is the first
write after system reset. This method requires only a flip-
flop and an OR gate as shown inFigure 50. At reset, the flip-
flop is preset, which pulls the Q output low. Since WR is
negated, ML is not enabled. The first write access is used to
program the chip. When WR is asserted, ML is asserted.
WR negated clocks the flip-flop, negates ML, and programs
the DP8520A/21A/22A with the address and ECAS0 avail-
able at that time. CS does not need to be asserted using
this method.
An I/O port can also be used to assert ML. After ML is
asserted, a chip selected access can be performed to pro-
gram the chip. After the chip selected access, ML can be
negated through the I/O port as shown in Figure 49.
TL/F/9338–A1
FIGURE 50. Programming the DP8520A/21A/22A on the First CPU Write after Power Up
38
9.0 Programming and Resetting (Continued)
9.3 EXTERNAL RESET
will program the chip. If ML is negated before or at the same
time as DISRFSH as shown inFigure 52, the chip will not be
programmed. After the chip is programmed, the 60 ms ini-
tialization period will be entered into if this is the first pro-
gramming after power up or reset. The user must perform
an external reset before programming the DP8520A/21A/
22A.
At power up, if the internal power up reset worked, all inter-
nal latches and flip-flops are cleared. The power up state is
entered by asserting ML and DISRFSH for 16 positive edg-
es of CLK. After 16 clocks if the user negates DISRFSH
before negating ML as shown in Figure 51, ML negated
TL/F/9338–A2
FIGURE 51. Chip Reset and Programmed
TL/F/9338–A3
FIGURE 52. Chip Reset but Not Programmed
39
9.0 Programming and Resetting (Continued)
9.4 PROGRAMMING BIT DEFINITIONS
Symbol
Description
ECAS0
Extend CAS/Refresh Request Select
0
The CASn outputs will be negated with the RASn outputs when AREQ (or AREQB, DP8522A only) is
negated. The RFIP pin will function as refresh in progress. During a video shift register load operation, the
DT/OE output will be negated by either the 4th rising clock edge after the input VSRL asserts, or by the
VSRL input negating, whichever occurs first, when this mode is programmed.
1
The CASn outputs will be negated, during an access (Port A (or Port B, DP8522A only)) when their
corresponding ECASn inputs are negated. This feature allows the CAS outputs to be extended beyond the
RAS outputs negating. Scrubbing refreshes are NOT affected. During scrubbing refreshes the CAS outputs
will negate along with the RAS outputs regardless of the state of the ECAS inputs.
The RFIP output will function as ReFresh ReQuest (RFRQ) when this mode is programmed. The DT/OE
output will be negated by the input VSRL negating when this mode is programmed.
B1
Access Mode Select
0
ACCESS MODE 0: ALE pulsing high sets an internal latch. On the next positive edge of CLK, the access
(RAS) will start. AREQ will terminate the access.
1
ACCESS MODE 1: ADS asserted starts the access (RAS) immediately. AREQ will terminate the access.
B0
0
Address Latch Mode
ADS or ALE asserted for Port A or AREQB asserted for Port B with the appropriate GRANT latch the input
row, column and bank address.
1
The row, column and bank latches are fall through.
C9
Delay CAS during WRITE Accesses
0
1
CAS is treated the same for both READ and WRITE accesses.
During WRITE accesses, CAS will be asserted by the event that occurs last: CAS asserted by the internal
delay line or CAS asserted on the positive edge of CLK after RAS is asserted.
C8
Row Address Hold Time
e
e
0
1
Row Address Hold Time
Row Address Hold Time
25 ns minimum
15 ns minimum
C7
Column Address Setup Time
e
e
0
1
Column Address Setup Time
Column Address Setup Time
10 ns minimum
0 ns minimum
C6, C5, C4
RAS and CAS Configuration Modes/Error Scrubbing during Refresh
0, 0, 0
RAS0–3 and CAS0–3 are all selected during an access. For a particular CAS to be asserted, its
corresponding ECAS input must be asserted. B0 and B1 are not used during an access. Error scrubbing
during refresh.
0, 0, 1
RAS and CAS pairs are selected during an access by B1. For a particular CAS to be asserted, its
corresponding ECAS input must be asserted.
e
e
B1
B1
0 during an access selects RAS0–1 and CAS0–1.
1 during an access selects RAS2–3 and CAS2–3.
B0 is not used during an Access.
Error scrubbing during refresh.
0, 1, 0
RAS and CAS singles are selected during an access by B0–1. For a particular CAS to be asserted, its
corresponding ECAS input must be asserted.
e
e
e
e
e
e
e
e
B1
B1
B1
B1
0, B0
0, B0
1, B0
1, B0
0 during an access selects RAS0 and CAS0.
1 during an access selects RAS1 and CAS1.
0 during an access selects RAS2 and CAS2.
1 during an access selects RAS3 and CAS3.
Error scrubbing during refresh.
0, 1, 1
RAS0–3 and CAS0–3 are all selected during an access. For a particular CAS to be asserted, its
corresponding ECAS input must be asserted.
B1, B0 are not used during an access.
No error scrubbing. (RAS only refreshing)
40
9.0 Programming and Resetting (Continued)
9.4 PROGRAMMING BIT DEFINITIONS (Continued)
Symbol
Description
RAS and CAS Configuration Modes (Continued)
C6, C5, C4
1, 0, 0
RAS pairs are selected by B1. CAS0–3 are all selected. For a particular CAS to be asserted, its
corresponding ECAS input must be asserted.
e
e
B1
B1
0 during an access selects RAS0–1 and CAS0–3.
1 during an access selects RAS2–3 and CAS0–3.
B0 is not used during an access.
No error scrubbing.
1, 0, 1
RAS and CAS pairs are selected by B1. For a particular CAS to be asserted, its corresponding ECAS input
must be asserted.
e
e
B1
B1
0 during an access selects RAS0–1 and CAS0–1.
1 during an access selects RAS2–3 and CAS2–3.
B0 is not used during an access.
No error scrubbing.
1, 1, 0
RAS singles are selected by B0–1. CAS0–3 are all selected. For a particular CAS to be asserted, its
corresponding ECAS input must be asserted.
e
e
e
e
e
e
e
e
B1
B1
B1
B1
0, B0
0, B0
1, B0
1, B0
0 during an access selects RAS0 and CAS0–3.
1 during an access selects RAS1 and CAS0–3.
0 during an access selects RAS2 and CAS0–3.
1 during an access selects RAS3 and CAS0–3.
No error scrubbing.
1, 1, 1
RAS and CAS singles are selected by B0, 1. For a particular CAS to be asserted, its corresponding ECAS
input must be asserted.
e
e
e
e
e
e
e
e
B1
B1
B1
B1
0, B0
0, B0
1, B0
1, B0
0 during an access selects RAS0 and CAS0.
1 during an access selects RAS1 and CAS1.
0 during an access selects RAS2 and CAS2.
1 during an access selects RAS3 and CAS3.
No error scrubbing.
C3
Refresh Clock Fine Tune Divisor
e
e
e
e
0
Divide delay line/refresh clock further by 30 (If DELCLK/Refresh Clock Clock Divisor
refresh period).
2 MHz
2 MHz
15 ms
13 ms
1
Divide delay line/refresh clock further by 26 (If DELCLK/Refresh Clock Clock Divisor
refresh period).
C2, C1, C0
Delay Line/Refresh Clock Divisor Select
0, 0, 0
0, 0, 1
0, 1, 0
0, 1, 1
1, 0, 0
1, 0, 1
1, 1, 0
1, 1, 1
Divide DELCLK by 10 to get as close to 2 MHz as possible.
Divide DELCLK by 9 to get as close to 2 MHz as possible.
Divide DELCLK by 8 to get as close to 2 MHz as possible.
Divide DELCLK by 7 to get as close to 2 MHz as possible.
Divide DELCLK by 6 to get as close to 2 MHz as possible.
Divide DELCLK by 5 to get as close to 2 MHz as possible.
Divide DELCLK by 4 to get as close to 2 MHz as possible.
Divide DELCLK by 3 to get as close to 2 MHz as possible.
R9
Refresh Mode Select
0
1
RAS0–3 will all assert and negate at the same time during a refresh.
Staggered Refresh. RAS outputs during refresh are separated by one positive clock edge. Depending on the
configuration mode chosen, either one or two RASs will be asserted.
R8
Address Pipelining Select
0
Address pipelining is selected. The VRAM controller will switch the VRAM column address back to the row
address after guaranteeing the column address hold time.
1
Non-address pipelining is selected. The VRAM controller will hold the column address on the VRAM address
bus until the access RASs are negated.
41
9.0 Programming and Resetting (Continued)
9.4 PROGRAMMING BIT DEFINITIONS (Continued)
Symbol
Description
R7
WAIT or DTACK Select
0
1
WAIT type output is selected.
DTACK (Data Transfer ACKnowledge) type output is selected.
R6
Add Wait States to the Current Access if WAITIN is Low
0
1
WAIT or DTACK will be delayed by one additional positive edge of CLK.
WAIT or DTACK will be delayed by two additional positive edges of CLK.
R5, R4
WAIT/DTACK during Burst (See Section 5.1.2 or 5.2.2)
e
0, 0
NO WAIT STATES; If R7
0 during programming, WAIT will remain negated during burst portion of access.
e
If R7
1T; If R7
WAIT will negate from the positive edge of CLK after the ECASs have been asserted.
1 programming, DTACK will remain asserted during burst portion of access.
e
0, 1
1, 0
1, 1
0 during programming, WAIT will assert when the ECAS inputs are negated with AREQ asserted.
e
DTACK will assert from the positive edge of CLK after the ECASs have been asserted.
If R7
1 during programming, DTACK will negate when the ECAS inputs are negated with AREQ asserted.
e
asserted. WAIT will negate on the negative level of CLK after the ECASs have been asserted.
(/2T; If R7
0 during programming, WAIT will assert when the ECAS inputs are negated with AREQ
e
DTACK will assert from the negative level of CLK after the ECASs have been asserted.
If R7
1 during programming, DTACK will negate when the ECAS inputs are negated with AREQ asserted.
e
when the ECAS inputs are asserted.
0T; If R7
0 during programming, WAIT will assert when the ECAS inputs are negated. WAIT will negate
e
when the ECAS inputs are asserted.
If R7
1 during programming, DTACK will negate when the ECAS inputs are negated. DTACK will assert
R3, R2
WAIT/DTACK Delay Times (See Section 5.1.1 or 5.2.1)
e
NO WAIT STATES; If R7 0 during programming, WAIT will remain high during non-delayed accesses.
WAIT will negate when RAS is negated during delayed accesses.
0, 0
e
NO WAIT STATES; If R7
1 during programming, DTACK will be asserted when RAS is asserted.
e
(/2T; If R7
0, 1
1, 0
0 during programming, WAIT will negate on the negative level of CLK, after the access RAS.
e
1T; If R7
RAS.
1 during programming, DTACK will be asserted on the positive edge of CLK after the access
e
NO WAIT STATES, (/2T; If R7
WAIT will negate on the negative level of CLK, after the access RAS, during delayed accesses.
0 during programming, WAIT will remain high during non-delayed accesses.
e
(/2T; If R7
RAS.
1 during programming, DTACK will be asserted on the negative level of CLK after the access
e
0 during programming, WAIT will negate on the positive edge of CLK after the access RAS.
1, 1
1T; If R7
e
edge of CLK after the access RAS.
1(/2T; If R7
1 during programming, DTACK will be asserted on the negative level of CLK after the positive
R1, R0
RAS Low and RAS Precharge Time
e
0, 0
RAS asserted during refresh
2 positive edges of CLK.
1 positive edge of CLK.
RAS will start from the first positive edge of CLK after GRANTB transitions (DP8522A).
e
RAS precharge time
e
0, 1
1, 0
1, 1
RAS asserted during refresh
3 positive edges of CLK.
2 positive edges of CLK.
RAS will start from the second positive edge of CLK after GRANTB transitions (DP8522A).
e
RAS precharge time
e
RAS asserted during refresh
2 positive edges of CLK.
2 positive edges of CLK.
RAS will start from the first positive edge of CLK after GRANTB transitions (DP8522A).
e
RAS precharge time
e
RAS asserted during refresh
4 positive edges of CLK.
3 positive edges of CLK.
RAS will start from the second positive edge of CLK after GRANTB transitions (DP8522A).
e
RAS precharge time
Note 1: The configuration modes allow RASs and CASs to be grouped such that each RAS and CAS will drive one-fourth of the total VRAM array whether the array
is organized as 1, 2, or 4 banks.
Note 2: In order for a CAS output to go low during an access, it must be both selected and enabled. ECAS0–1 are used to enable the CAS outputs (ECAS0 enables
CAS0,1; ECAS1 enables CAS2,3). Selection is determined by the configuration mode and B1, B0.
42
11.2 CALCULATION OF tRAH AND tASC
10.0 Test Mode
There are two clock inputs to the DP8520A/21A/22A.
These two clocks, DELCLK and CLK can either be tied to-
gether to the same clock or be tied to different clocks run-
ning asynchronously at different frequencies.
Staggered refresh in combination with the error scrubbing
mode places the DP8520A/21A/22A in test mode. In this
mode, the 24-bit refresh counter is divided into a 13-bit and
11-bit counter. During refreshes both counters are incre-
mented to reduce test time.
The clock input, DELCLK, controls the internal delay line
and refresh request clock. DELCLK should be a multiple of
2 MHz. If DELCLK is not a multiple of 2 MHz, tRAH and
tASC will change. The new values of tRAH and tASC can be
calculated by the following formulas:
11.0 VRAM Critical Timing
Parameters
The two critical timing parameters, shown in Figure 53, that
must be met when controlling the access timing to a VRAM
are the row address hold time, tRAH, and the column ad-
dress setup time, tASC. Since the DP8520A/21A/22A con-
tain a precise internal delay line, the values of these param-
eters can be selected at programming time. These values
will also increase and decrease if DELCLK varies from
2 MHz.
e
If tRAH was programmed to equal 15 ns then tRAH
b
30*(((DELCLK Divisor)* 2 MHz/(DELCLK Frequency)) 1)
a
15 ns.
e
If tRAH was programmed to equal 25 ns then tRAH
b
30*(((DELCLK Divisor)* 2 MHz/(DELCLK Frequency)) 1)
a
25 ns.
e
If tASC was programmed to equal 0 ns then tASC
15*
15 ns.
b
((DELCLK Divisor)* 2 MHz/(DELCLK Frequency))
If tASC was programmed to equal 10 ns then tASC
11.1 PROGRAMMABLE VALUES OF tRAH AND tASC
e
25*
15 ns.
b
The DP8520A/21A/22A allow the values of tRAH and tASC
to be selected at programming time. For each parameter,
two choices can be selected. tRAH, the row address hold
time, is measured from RAS asserted to the row address
starting to change to the column address. The two choices
for tRAH are 15 ns and 25 ns, programmable through ad-
dress bit C8.
((DELCLK Divisor)* 2 MHz/(DELCLK Frequency))
Since the values of tRAH and tASC are increased or de-
creased, the time to CAS asserted will also increase or de-
crease. These parameters can be adjusted by the following
formula:
e
Programmed tRAH
a
Actual tASC Programmed tASC.
b
Actual tRAH
b
Delay to CAS
Actual Spec.
a
tASC, the column address setup time, is measured from the
column address valid to CAS asserted. The two choices for
tASC are 0 ns and 10 ns, programmable through address bit
C7.
TL/F/9338–A4
FIGURE 53. tRAH and tASC
43
12.0 Dual Accessing Functions (DP8522A)
The DP8522A has all the functions previously described. In
addition to those features, the DP8522A also has the capa-
bilities to arbitrate among refresh, Port A and a second port,
Port B. This allows two CPUs to access a common VRAM
array. VRAM refresh has the highest priority followed by the
currently granted port. The ungranted port has the lowest
priority. The last granted port will continue to stay granted
even after the access has terminated, until an access re-
quest is received from the ungranted port (see Figure 54a ).
The dual access configuration assumes that both Port A
and Port B are synchronous to the system clock. If they are
not synchronous to the system clock they should be exter-
nally synchronized (Ex. By running the access requests
through several Flip-Flops, see Figure 58a ).
suming that Port A is not accessing the VRAM (CS, ADS/
ALE and AREQ) and RAS precharge for the particular bank
has completed. It is important to note that for GRANTB to
transition to Port B, Port A must not be requesting an ac-
cess at a rising clock edge (or locked) and Port B must be
requesting an access at that rising clock edge. Port A can
request an access through CS and ADS/ALE or CS and
AREQ. Therefore during an interleaved access where CS
and ADS/ALE become asserted before AREQ from the pre-
e
vious access is negated, Port A will retain GRANTB
whether AREQB is asserted or not.
0
Since there is no chip select for Port B, AREQB must incor-
porate this signal. This mode of accessing is similar to Mode
1 accessing for Port A.
12.1 PORT B ACCESS MODES (DP8522A)
Port B accesses are initiated from a single input, AREQB.
When AREQB is asserted, an access request is generated.
If GRANTB is asserted and a refresh is not taking place or
precharge time is not required, RAS will be asserted when
AREQB is asserted. Once AREQB is asserted, it must stay
asserted until the access is over. AREQB negated, negates
e
RAS as shown inFigure 54b. Note that if ECAS0
1 during
TL/F/9338–A5
programming the CAS outputs may be held asserted (be-
yond RASn negating) by continuing to assert the appropri-
ate ECAS input (the same as Port A accesses). If Port B is
not granted, the access will begin on the first or second
positive edge of CLK after GRANTB is asserted (See R0,
R1 programming bit definitions) as shown in Figure 54c, as-
Explanation of Terms
e
e
AREQA
AREQB
Chip Selected access request from Port A
Chip Selected access request from Port B
e
LOCK
Externally controlled LOCKing of the Port
that is currently GRANTed.
FIGURE 54a. DP8522A PORT A/PORT B ARBITRATION
STATE DIAGRAM. This arbitration may take place
during the ‘‘ACCESS’’ or ‘‘REFRESH’’
state (seeFigure 7a ).
TL/F/9338–A6
FIGURE 54b. Access Request for Port B
TL/F/9338–A7
FIGURE 54c. Delayed Port B Access
44
12.0 Dual Accessing Functions (DP8522A) (Continued)
12.2 PORT B WAIT STATE SUPPORT (DP8522A)
Advanced transfer acknowledge for Port B, ATACKB, is
used for wait state support for Port B. This output will be
asserted when RAS for the Port B access is asserted, as
shown in Figures 55 and 56. Once asserted, this output will
stay asserted until AREQB is negated. With external logic,
ATACKB can be made to interface to any CPU’s wait input
as shown in Figure 57.
TL/F/9338–B0
C) Synchronize ATACKB to CPU B Clock. This is useful if CPU B runs asyn-
chronous to the DP8522.
FIGURE 57. Modifying Wait Logic for Port B
12.3 COMMON PORT A AND PORT B DUAL PORT
FUNCTIONS
An input, LOCK, and an output, GRANTB, add additional
functionality to the dual port arbitration logic. LOCK allows
Port A or Port B to lock out the other port from the VRAM.
When a Port is locked out of the VRAM, wait states will be
inserted into its access cycle until it is allowed to access
memory. GRANTB is used to multiplex the input control sig-
nals and addresses to the DP8522A.
TL/F/9338–A8
A) Extend ATACK to (/2T ((/2 Clock) after RAS goes low.
12.3.1 GRANTB Output
The output GRANTB determines which port has current ac-
cess to the VRAM array. GRANTB asserted signifies Port B
has access. GRANTB negated signifies Port A has access
to the VRAM array.
TL/F/9338–A9
B) Extend ATACK to 1T after RAS goes low.
TL/F/9338–B1
FIGURE 55. Non-Delayed Port B Access
TL/F/9338–B2
FIGURE 56. Delayed Port B Access
45
12.0 Dual Accessing Functions (DP8522A) (Continued)
Since the DP8522A has only one set of address inputs, the
signal is used, with the addition of buffers, to allow the cur-
rently granted port’s addresses to reach the DP8522A. The
signals which need to be bufferred are R0–10, C0–10,
B0–1, ECAS0–1, and LOCK. All other inputs are not com-
mon and do not have to be buffered as shown inFigure 58a.
If a Port, which is not currently granted, tries to access
the VRAM array, the GRANTB output will transition from a
rising clock edge from AREQ or AREQB negating and will
preceed the RAS for the access by one or two clock peri-
ods. GRANTB will then stay in this state until the other port
requests an access and the currently granted port is not
accessing the VRAM as shown in Figure 58b.
Dual Accessing Using the DP8522A
TL/F/9338–1
*If Port B is synchronous the Request Synchronizing logic will not be required.
FIGURE 58a. Dual Accessing Using the DP8522A to interface a CPU and a Graphics Processor to a Video RAM System
46
12.0 Dual Accessing Functions (DP8522A) (Continued)
TL/F/9338–B3
FIGURE 58b. Wait States during a Port B Access
12.3.2 LOCK Input
12.4 DUAL PORTING AND VRAM TRANSFER CYCLES
When the LOCK input is asserted, the currently granted port
can ‘‘lock out’’ the other port through the insertion of wait
states to that port’s access cycle. LOCK does not disable
refreshes, it only keeps GRANTB in the same state even if
the other port requests an access, as shown in Figure 59.
LOCK can be used by either port. The user must guarantee
The input AVSRLRQ disables any further internally or exter-
nally requested refreshes or Port B access requests from
being executed. The AVSRLRQ input does this by making
the VRAM controller arbitration logic think that a Port A ac-
cess is in progress from the point where the AVSRLRQ in-
put goes low until the VRAM shift register load operation is
completed.
that LOCK is not asserted with Port B granted when
AVSRLRQ is asserted to request a VRAM transfer cycle.
TL/F/9338–B4
FIGURE 59. LOCK Function
47
13.0 Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
All Input or Output Voltage
with Respect to GNDÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀ 0.5V to 7V
b
a
@
Power Dissipation 20 MHzÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀ0.5W
a
Temperature under Bias ÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀ0 C to 70 C
§
Storage Temperature ÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀ 65 C to 150 C
§
§
b
a
§
e
a
0 C to 70 C, V
e
e
5V 10%, GND 0V
g
14.0 DC Electrical Characteristics T
§
§
A
CC
Symbol
Parameter
Conditions
Min
Typ
Max
Units
V
V
Logical 1 Input Voltage
Tested with a Limited
Functional Pattern
IH
a
2.0
V
CC
0.5
V
Logical 0 Input Voltage
Tested with a Limited
Functional Pattern
IL
b
0.5
0.8
0.5
V
e b
b
b
V
OH1
V
OL1
V
OH2
V
OL2
Q and WE Outputs
Q and WE Outputs
All Outputs except Qs, WE
All Outputs except Qs, WE
Input Leakage Current
ML Input Current (Low)
Standby Current
I
I
I
I
10 mA
V
V
1.0
1.0
V
V
OH
OL
OH
OL
CC
e
10 mA
e b
3 mA
V
CC
e
e
e
3 mA
or GND
0.5
10
V
b
I
I
I
I
I
I
V
V
10
mA
mA
mA
mA
mA
IN
IN
IN
CC
GND
V
200
15
IL ML
CC1
CC1
CC1
CC2
e
CLK at 8 MHz (V
IN
V
or GND)
6
8
CC
e
Standby Current
CLK at 20 MHz (V
CLK at 25 MHz (V
V
V
or GND)
or GND)
17
IN
IN
CC
CC
e
Standby Current
10
20
Supply Current
CLK at 8 MHz (Inputs Active)
e
V
20
40
50
40
75
mA
mA
e
(I
LOAD
0) (V
IN
or GND)
CC
I
I
Supply Current
Supply Current
Input Capacitance
CLK at 20 MHz (Inputs Active)
e
V
CC2
CC2
e
(I
0) (V
IN
or GND)
CC
LOAD
CLK at 25 MHz (Inputs Active)
95
10
mA
pF
e
e
V
(I
f
0) (V
IN
or GND)
CC
LOAD
C
*
at 1 MHz
IN
IN
*Note: C is not 100% tested.
IN
15.0 AC Timing Parameters: DP8520A/DP8521A/DP8522A
The AC timing parameters are grouped into sectional num-
400–416 Mode 1 access parameters used in both single
and dual access applications
bers as shown below. These numbers also refer to the tim-
ing diagrams.
450–455 Special Mode 1 access parameters which super-
sede the 400–416 parameters when dual ac-
cessing
1–38
Common parameters to all modes of operation
Difference parameters used to calculate;
RAS low time,
50–56
500–506 Programming parameters
RAS precharge time,
600–605 Graphics parameters for VRAM transfer cycles
CAS high time and
k
T
A
k
e
g
Unless otherwise stated V
CC
5.0V 10%, 0
CAS low time
70 C, the output load capacitance is typical for 4 banks of
§
100–121 Common dual access parameters used for Port
B accesses and inputs and outputs used only in
dual accessing
18 VRAMs per bank, including trace capacitance (see Note
2).
Two different loads are specified:
200–212 Refresh parameters
e
e
C
L
C
L
50 pF loads on all outputs except
150 pF loads on Q0–8, 9, and 10; or
300–315 Mode 0 access parameters used in both single
and dual access applications
e
e
e
C
H
C
H
C
H
50 pF loads on all outputs except
125 pF loads on RAS0–3 and CAS0–3 and
380 pF loads on Q0–8, 9, and 10.
48
15.0 AC Timing Parameters: DP8520A/DP8521A/DP8522A (Continued)
8520A/21A/22A-25
Common Parameter
Description
Number
Symbol
C
L
C
H
Min
0
Max
Min
0
Max
1
fCLK
CLK Frequency
25
25
2
tCLKP
CLK Period
40
12
5
40
12
5
3, 4
5
tCLKPW
fDCLK
CLK Pulse Width
DELCLK Frequency
DELCLK Period
20
20
6
tDCLKP
tDCLKPW
tPRASCAS0
50
12
200
50
12
200
7, 8
9a
DELCLK Pulse Width
RAS Asserted to CAS Asserted
e
0 ns)
30
40
40
50
30
40
40
50
e
(tRAH
15 ns, tASC
9b
9c
9d
tPRASCAS1
tPRASCAS2
tPRASCAS3
RAS Asserted to CAS Asserted
e
10 ns)
e
(tRAH
15 ns, tASC
(RAS Asserted to CAS Asserted
e
0 ns)
e
(tRAH
25 ns, tASC
(RAS Asserted to CAS Asserted
e
10 ns)
e
(tRAH
25 ns, tASC
e
e
10a
10b
11a
11b
12
tRAH
Row Address Hold Time (tRAH
Row Address Hold Time (tRAH
15)
25)
15
25
0
15
25
0
tRAH
e
e
tASC
Column Address Setup Time (tASC
Column Address Setup Time (tASC
0)
tASC
10)
10
10
tPCKRAS
CLK High to RAS Asserted
following Precharge
22
26
13
14
15
16
17
18
tPARQRAS
tPENCL
AREQ Negated to RAS Negated
31
20
20
47
31
35
27
27
54
31
ECAS0–1 Asserted to CAS Asserted
ECAS0–1 Negated to CAS Negated
AREQ Negated to CAS Negated
CLK to WAIT Negated
tPENCH
tPARQCAS
tPCLKWH
tPCLKDL0
CLK to DTACK Asserted
(Programmed as DTACK of 1/2, 1, 1(/2
or if WAITIN is Asserted)
28
36
28
36
19
20
tPEWL
tSECK
ECAS Negated to WAIT Asserted
during a Burst Access
ECAS Asserted Setup to CLK High to
Recognize the Rising Edge of CLK
during a Burst Access
19
19
49
15.0 AC Timing Parameters: DP8520A/DP8521A/DP8522A (Continued)
k
per bank, including trace capacitance (see Note 2).
k
70 C, the output load capacitance is typical for 4 banks of 18 VRAMs
e
g
5.0V 10%, 0 C
Unless otherwise stated V
T
A
§
§
CC
e
e
e
Two different loads are specified:
C
H
C
H
C
H
50 pF loads on all outputs except
125 pF loads on RAS0–3 and CAS0–3 and
380 pF loads on Q0–8, 9 and 10.
e
e
C
C
50 pF loads on all outputs except
150 pF loads on Q0–8, 9 and 10; or
L
L
8520A/21A/22A-25
Common Parameter
Description
Number
Symbol
C
L
C
H
Min
Max
Min
Max
21
tPEDL
ECAS Asserted to DTACK
Asserted during a Burst Access
(Programmed as DTACK0)
38
38
22
tPEDH
ECAS Negated to DTACK
38
38
Negated during a Burst Access
23
26
tSWCK
tPAQ
WAITIN Asserted Setup to CLK
5
5
Row, Column Address Valid to
Q0–8, 9, 10 Valid
26
30
35
39
27
tPCINCQ
COLINC Asserted to Q0–8, 9, 10
Incremented
28
tSCINEN
COLINC Asserted Setup to ECAS
e
17
37
15
19
37
15
Asserted to Ensure tASC
0 ns
29a
29b
tSARQCK1
tSARQCK2
AREQ Negated Setup to CLK
High with 1 Period of Precharge
AREQ Negated Setup to CLK High with
l
1 Period of Precharge Programmed
30
31
tPAREQDH
tPCKCAS
AREQ Negated to DTACK Negated
27
25
27
32
CLK High to CAS Asserted
when Delayed by WIN
32
tSCADEN
Column Address Setup to ECAS
e
14
20
16
20
Asserted to Guarantee tASC
0
33
tWCINC
COLINC Pulse Width
34a
tPCKCL0
CLK High to CAS Asserted following
72
82
82
92
79
89
89
99
e
e
Precharge (tRAH
15 ns, tASC
0 ns)
0 ns)
0 ns)
10 ns)
34b
34c
34d
35
tPCKCL1
tPCKCL2
tPCKCL3
tCAH
CLK High to CAS Asserted following
e
e
25 ns, tASC
Precharge (tRAH
CLK High to CAS Asserted following
e
e
25 ns, tASC
Precharge (tRAH
CLK High to CAS Asserted following
e
e
25 ns, tASC
Precharge (tRAH
Column Address Hold Time
(Interleave Mode Only)
32
32
36
tPCQR
CAS Asserted to Row Address
Valid (Interleave Mode Only)
90
14
14
90
24
24
37
tPCASDTH
tPCASDTL
CAS Asserted to DT/OE
Asserted for a VRAM Read Access
38
CAS Negated to DT/OE
Negated for a VRAM Read Access
50
15.0 AC Timing Parameters: DP8520A/DP8521A/DP8522A (Continued)
k
per bank, including trace capacitance (see Note 2).
k
70 C, the output load capacitance is typical for 4 banks of 18 VRAMs
e
g
5.0V 10%, 0 C
Unless otherwise stated V
T
A
§
§
CC
e
e
e
Two different loads are specified:
C
H
C
H
C
H
50 pF loads on all outputs except
125 pF loads on RAS0–3 and CAS0–3 and
380 pF loads on Q0–8, 9 and 10.
e
e
C
C
50 pF loads on all outputs except
150 pF loads on Q0–8, 9 and 10; or
L
L
8520A/21A/22A-25
Difference
Number
Symbol
C
L
C
H
Parameter Description
Min
Max
Min
Max
50
tD1
(AREQ or AREQB Negated to RAS
Negated) Minus (CLK High to RAS
Asserted)
14
14
51
52
tD2
(CLK High to Refresh RAS Negated)
Minus (CLK High to RAS Asserted)
11
4
11
4
tD3a
(ADS Asserted to RAS Asserted
(Mode 1)) Minus (AREQ Negated
to RAS Negated)
53
54
55
56
tD3b
tD4
tD5
tD6
(CLK High to RAS Asserted (Mode 0))
4
7
6
4
7
6
Minus (AREQ Negated to RAS Negated)
(ECAS Asserted to CAS Asserted)
b
b
7
7
Minus (ECAS Negated to CAS Negated)
(CLK to Refresh RAS Asserted) Minus
(CLK to Refresh RAS Negated)
(AREQ Negated to RAS Negated)
Minus (ADS Asserted to RAS
Asserted ((Mode 1))
10
10
51
15.0 AC Timing Parameters: DP8520A/DP8521A/DP8522A (Continued)
k
per bank, including trace capacitance (see Note 2).
k
70 C, the output load capacitance is typical for 4 banks of 18 VRAMs
e
g
5.0V 10%, 0 C
Unless otherwise stated V
T
A
§
§
CC
e
e
e
Two different loads are specified:
C
H
C
H
C
H
50 pF loads on all outputs except
125 pF loads on RAS0–3 and CAS0–3 and
380 pF loads on Q0–8, 9 and 10.
e
e
C
C
50 pF loads on all outputs except
150 pF loads on Q0–8, 9 and 10; or
L
L
8520A/21A/22A-25
Common Dual Access
Parameter Description
Number
Symbol
C
L
C
H
Min
3
Max
Min
3
Max
100
101
102
103
105
tHCKARQB
tSARQBCK
tPAQBRASL
tPAQBRASH
tPCKRASG
AREQB Negated Held from CLK High
AREQB Asserted Setup to CLK High
AREQB Asserted to RAS Asserted
AREQB Negated to RAS Negated
7
7
37
32
41
36
CLK High to RAS Asserted for
Pending Port B Access
44
45
51
48
45
51
106
107
tPAQBATKBL
tPCKATKB
AREQB Asserted to ATACKB Asserted
CLK High to ATACKB Asserted
for Pending Access
108
109
110
tPCKGH
CLK High to GRANTB Asserted
CLK High to GRANTB Negated
32
29
32
29
tPCKGL
tSADDCKG
Row Address Setup to CLK High That
Asserts RAS following a GRANTB
11
5
16
5
e
Change to Ensure tASR
0 ns for Port B
111
tSLOCKCK
LOCK Asserted Setup to CLK Low
to Lock Current Port
112
113
114
tPAQATKBH
tPAQBCASH
tSADAQB
AREQ Negated to ATACKB Negated
AREQB Negated to CAS Negated
21
47
21
54
Address Valid Setup to
AREQB Asserted
7
5
12
5
116
117
tHCKARQG
tWAQB
AREQ Negated Held from CLK High
AREQB High Pulse Width
e
26
31
to Guarantee tASR
0 ns
118a
118b
118c
118d
120a
tPAQBCAS0
tPAQBCAS1
tPAQBCAS2
tPAQBCAS3
tPCKCASG0
AREQB Asserted to CAS Asserted
e
0 ns)
87
97
94
e
(tRAH
15 ns, tASC
AREQB Asserted to CAS Asserted
e
10 ns)
104
104
114
e
(tRAH
15 ns, tASC
AREQB Asserted to CAS Asserted
e
0 ns)
97
e
(tRAH
25 ns, tASC
AREQB Asserted to CAS Asserted
e
10 ns)
107
e
(tRAH
25 ns, tASC
CLK High to CAS Asserted
for Pending Port B Access
96
103
113
113
123
e
e
0 ns)
(tRAH
15 ns, tASC
120b
120c
120d
121
tPCKCASG1
tPCKCASG2
tPCKCASG3
tSBADDCKG
CLK High to CAS Asserted
for Pending Port B Access
106
106
116
e
e
0 ns)
(tRAH
15 ns, tASC
CLK High to CAS Asserted
for Pending Port B Access
e
e
0 ns)
(tRAH
25 ns, tASC
CLK High to CAS Asserted
for Pending Port B Access
e
e
10 ns)
(tRAH
25 ns, tASC
Bank Address Valid Setup to CLK
High That Starts RAS
for Pending Port B Access
10
10
52
15.0 AC Timing Parameters: DP8520A/DP8521A/DP8522A (Continued)
k
per bank, including trace capacitance (see Note 2).
k
70 C, the output load capacitance is typical for 4 banks of 18 VRAMs
e
g
5.0V 10%, 0 C
Unless otherwise stated V
T
A
§
§
CC
e
e
e
Two different loads are specified:
C
H
C
H
C
H
50 pF loads on all outputs except
125 pF loads on RAS0–3 and CAS0–3 and
380 pF loads on Q0–8, 9 and 10.
e
e
C
C
50 pF loads on all outputs except
150 pF loads on Q0–8, 9 and 10; or
L
L
8520A/21A/22A-25
Refresh Parameter
Description
Number
Symbol
C
L
C
H
Min
22
Max
Min
22
Max
200
201
202
204
205
206
207
208
209a
tSRFCK
RFSH Asserted Setup to CLK High
DISRFSH Asserted Setup to CLK High
EXTENDRF Setup to CLK High
CLK High to RFIP Asserted
tSDRFCK
tSXRFCK
22
22
12
12
tPCKRFL
31
50
51
29
23
31
50
51
33
27
tPARQRF
tPCKRFH
AREQ Negated to RFIP Asserted
CLK High to RFIP Negated
tPCKRFRASH
tPCKRFRASL
tPCKCL0
CLK High to Refresh RAS Negated
CLK High to Refresh RAS Asserted
CLK High to CAS Asserted
during Error Scrubbing
73
83
83
93
80
90
e
e
0 ns)
(tRAH
15 ns, tASC
209b
209c
209d
tPCKCL1
tPCKCL2
tPCKCL3
CLK High to CAS Asserted
during Error Scrubbing
e
e
10 ns)
(tRAH
15 ns, tASC
CLK High to CAS Asserted
during Error Scrubbing
90
e
e
0 ns)
(tRAH
25 ns, tASC
CLK High to CAS Asserted
during Error Scrubbing
100
e
e
10 ns)
(tRAH
25 ns, tASC
210
211
212
tWRFSH
tPCKRQL
tPCKRQH
RFSH Pulse Width
15
15
CLK High to RFRQ Asserted
CLK High to RFRQ Negated
40
40
40
40
53
15.0 AC Timing Parameters: DP8520A/DP8521A/DP8522A (Continued)
k
per bank, including trace capacitance (see Note 2).
k
70 C, the output load capacitance is typical for 4 banks of 18 VRAMs
e
g
5.0V 10%, 0 C
Unless otherwise stated V
T
A
§
§
CC
e
e
e
Two different loads are specified:
C
H
C
H
C
H
50 pF loads on all outputs except
125 pF loads on RAS0–3 and CAS0–3 and
380 pF loads on Q0–8, 9 and 10.
e
e
C
C
50 pF loads on all outputs except
150 pF loads on Q0–8, 9 and 10; or
L
L
8520A/21A/22A-25
Mode 0 Access
Parameter Description
Number
Symbol
C
L
C
H
Min
Max
Min
Max
300
tSCSCK
CS Asserted to CLK High
13
13
301a
tSALECKNL
ALE Asserted Setup to CLK High
Not Using On-Chip Latches or
if Using On-Chip Latches and
15
29
15
29
B0, B1, Are Constant, Only 1 Bank
301b
tSALECKL
ALE Asserted Setup to CLK High,
if Using On-Chip Latches if B0, B1
Can Change, More Than One Bank
302
303
304
tWALE
ALE Pulse Width
13
18
13
18
tSBADDCK
tSADDCK
Bank Address Valid Setup to CLK High
Row, Column Valid Setup to
CLK High to Guarantee
11
8
16
8
e
tASR
0 ns
305
306
tHASRCB
tSRCBAS
Row, Column, Bank Address
Held from ALE Negated
(Using On-Chip Latches)
Row, Column, Bank Address
Setup to ALE Negated
(Using On-Chip Latches)
2
2
307
tPCKRL
CLK High to RAS Asserted
22
72
26
79
308a
tPCKCL0
CLK High to CAS Asserted
e
e
0 ns)
(tRAH
15 ns, tASC
308b
308c
308d
tPCKCL1
tPCKCL2
tPCKCL3
CLK High to CAS Asserted
e
82
82
92
89
89
99
e
10 ns)
(tRAH
15 ns, tASC
CLK High to CAS Asserted
e
e
0 ns)
(tRAH
25 ns, tASC
CLK High to CAS Asserted
e
e
10 ns)
(tRAH
25 ns, tASC
309
310
tHCKALE
tSWINCK
ALE Negated Hold from CLK High
0
0
WIN Asserted Setup to CLK High
to Guarantee CAS is Delayed
b
b
16
16
311
312
313
tPCSWL
tPCSWH
tPCLKDL1
CS Asserted to WAIT Asserted
CS Negated to WAIT Negated
22
25
22
25
CLK High to DTACK Asserted
(Programmed as DTACK0)
32
29
32
29
314
315
tPALEWL
ALE Asserted to WAIT Asserted
(CS is Already Asserted)
AREQ Negated to CLK High That Starts
e
Access RAS to Guarantee tASR
(Non-Interleaved Mode Only)
0 ns
34
39
54
15.0 AC Timing Parameters: DP8520A/DP8521A/DP8522A (Continued)
k
per bank, including trace capacitance (see Note 2).
k
70 C, the output load capacitance is typical for 4 banks of 18 VRAMs
e
g
5.0V 10%, 0 C
Unless otherwise stated V
T
A
§
§
CC
e
e
e
Two different loads are specified:
C
H
C
H
C
H
50 pF loads on all outputs except
125 pF loads on RAS0–3 and CAS0–3 and
380 pF loads on Q0–8, 9 and 10.
e
e
C
C
50 pF loads on all outputs except
150 pF loads on Q0–8, 9 and 10; or
L
L
8520A/21A/22A-25
Mode 1 Access
Number
Symbol
C
L
C
H
Parameter Description
Min
Max
Min
Max
400a
400b
tSADSCK1
tSADSCKW
ADS Asserted Setup to CLK High
13
13
ADS Asserted Setup to CLK
(to Guarantee Correct WAIT
25
5
25
5
or DTACK Output; Doesn’t Apply for DTACK0)
401
tSCSADS
tPADSRL
tPADSCL0
CS Setup to ADS Asserted
402
ADS Asserted to RAS Asserted
ADS Asserted to CAS Asserted
25
75
29
82
403a
e
e
0 ns)
(tRAH
15 ns, tASC
403b
403c
403d
404
tPADSCL1
tPADSCL2
tPADSCL3
tSADDADS
ADS Asserted to CAS Asserted
e
10 ns)
85
85
95
92
92
e
(tRAH
15 ns, tASC
ADS Asserted to CAS Asserted
e
10 ns)
e
(tRAH
25 ns, tASC
ADS Asserted to CAS Asserted
e
10 ns)
102
e
(tRAH
25 ns, tASC
Row Address Valid Setup to ADS
e
9
0
14
0
Asserted to Guarantee tASR
0 ns
405
406
tHCKADS
tSWADS
ADS Negated Held from CLK High
WAITIN Asserted Setup to ADS
Asserted to Guarantee DTACK0
Is Delayed
0
0
407
408
tSBADAS
tHASRCB
Bank Address Setup to ADS Asserted
11
10
11
10
Row, Column, Bank Address Held from
ADS Asserted (Using On-Chip Latches)
409
tSRCBAS
Row, Column, Bank Address Setup to
ADS Asserted (Using On-Chip Latches)
2
2
410
411
tWADSH
tPADSD
ADS Negated Pulse Width
12
17
ADS Asserted to DTACK Asserted
(Programmed as DTACK0)
35
35
412
tSWINADS
WIN Asserted Setup to ADS Asserted
(to Guarantee CAS Delayed during
Writes Accesses)
b
b
10
10
413
414
415
tPADSWL0
tPADSWL1
tPCLKDL1
ADS Asserted to WAIT Asserted
29
29
29
29
(Programmed as WAIT0, Delayed Access)
ADS Asserted to WAIT Asserted
(Programmed WAIT 1/2 or 1)
CLK High to DTACK Asserted
(Programmed as DTACK0,
Delayed Access)
32
32
416
AREQ Negated to ADS Asserted
e
(Non Interleaved Mode Only)
to Guarantee tASR
0 ns
31
36
55
15.0 AC Timing Parameters: DP8520A/DP8521A/DP8522A (Continued)
k
per bank, including trace capacitance (see Note 2).
k
70 C, the output load capacitance is typical for 4 banks of 18 VRAMs
e
g
5.0V 10%, 0 C
Unless otherwise stated V
T
A
§
§
CC
e
e
e
Two different loads are specified:
C
H
C
H
C
H
50 pF loads on all outputs except
125 pF loads on RAS0–3 and CAS0–3 and
380 pF loads on Q0–8, 9 and 10.
e
e
C
C
50 pF loads on all outputs except
150 pF loads on Q0–8, 9 and 10; or
L
L
8520A/21A/22A-25
Mode 1 Dual Access
Parameter Description
Number
Symbol
C
L
C
H
Min
Max
Min
Max
450
tSADDCKG
Row Address Setup to CLK High That
Asserts RAS following a GRANTB
11
16
e
Port Change to Ensure tASR
0 ns
451
tPCKRASG
tPCLKDL2
tPCKCASG0
CLK High to RAS Asserted
for Pending Access
38
43
42
43
452
CLK to DTACK Asserted for Delayed
Accesses (Programmed as DTACK0)
453a
CLK High to CAS Asserted
for Pending Access
86
96
93
e
e
0 ns)
(tRAH
15 ns, tASC
453b
453c
453d
tPCKCASG1
tPCKCASG2
tPCKCASG3
CLK High to CAS Asserted
for Pending Access
103
103
113
e
e
10 ns)
(tRAH
15 ns, tASC
CLK High to CAS Asserted
for Pending Access
96
e
e
0 ns)
(tRAH
25 ns, tASC
CLK High to CAS Asserted
for Pending Access
106
e
e
10 ns)
(tRAH
25 ns, tASC
454
455
tSBADDCKG
tSADSCK0
Bank Address Valid Setp to CLK High
That Asserts RAS for Pending Access
4
4
ADS Asserted Setup to CLK High
11
11
56
15.0 AC Timing Parameters: DP8520A/DP8521A/DP8522A (Continued)
k
per bank, including trace capacitance (see Note 2).
k
70 C, the output load capacitance is typical for 4 banks of 18 VRAMs
e
g
5.0V 10%, 0 C
Unless otherwise stated V
T
A
§
§
CC
e
e
e
Two different loads are specified:
C
H
C
H
C
H
50 pF loads on all outputs except
125 pF loads on RAS0–3 and CAS0–3 and
380 pF loads on Q0–8, 9 and 10.
e
e
C
C
50 pF loads on all outputs except
150 pF loads on Q0–8, 9 and 10; or
L
L
8520A/21A/22A-25
Programing
Parameter Description
Number
Symbol
C
L
C
H
Min
7
Max
Min
7
Max
500
501
502
503
504
505
tHMLADD
tSADDML
tWML
Mode Address Held from ML Negated
Mode Address Setup to ML Negated
ML Pulse Width
6
6
15
0
15
0
tSADAQML
tHADAQML
tSCSARQ
Mode Address Setup to AREQ Asserted
Mode Address Held from AREQ Asserted
38
38
CS Asserted Setup to
AREQ Asserted
6
6
506
600
tSMLARQ
tSCKVSRL
ML Asserted Setup to AREQ Asserted
10
10
VSRL Low Setup to CLK Rising Edge to
guarantee counting VSRL as being Low
(used to determine when to end Graphics
Shift load access)
7
7
601
602
603
tHVSRLCK
tSCKAVSRL
tPVSRLDTL
VSRL Low from CLK High (to guarantee
VSRL is not counted as being Low until
the next rising clock edge)
3
3
AVSRLRQ Low before CLK Rising Edge
to guarantee locking the VRAM to only
Port A accesses
12
12
VSRL Low to DT/OE Low during
Graphics Shift Register Load access
23
33
604
605
tPVSRLDTH
tPCKDTL
VSRL Negated to DT/OE Negated
CLK to DT/OE Negated
22
27
32
37
Note 1: ‘‘Absolute Maximum Ratings’’ are the values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the device
should be operated at these limits. The table of ‘‘Electrical Characteristics’’ provides conditions for actual device operation.
e
e
2.5 ns. Input reference point on AC measurements is 1.5V. Output reference points are 2.4V for High and 0.8V for Low.
Note 2: Input pulse 0V to 3V; tR
tF
Note 3: AC Production testing is done at 50 pF.
57
15.0 AC Timing Parameters: DP8520A/DP8521A/DP8522A (Continued)
TL/F/9338–B5
FIGURE 60. Clock, DELCLK Timing
TL/F/9338–B6
FIGURE 61. 100: Dual Access Port B
58
15.0 AC Timing Parameters: DP8520A/DP8521A/DP8522A (Continued)
TL/F/9338–B7
FIGURE 62. 100: Port A and Port B Dual Access
TL/F/9338–B8
FIGURE 63. 200: Refresh Timing
59
15.0 AC Timing Parameters: DP8520A/DP8521A/DP8522A (Continued)
TL/F/9338–B9
FIGURE 64. 300: Mode 0 Timing
60
15.0 AC Timing Parameters: DP8520A/DP8521A/DP8522A (Continued)
TL/F/9338–C0
e
e
e
1, C6 1)
(Programmed as C4
1, C5
FIGURE 65. 300: Mode 0 Interleaving
61
15.0 AC Timing Parameters: DP8520A/DP8521A/DP8522A (Continued)
TL/F/9338–C1
FIGURE 66. 400: Mode 1 Timing
62
15.0 AC Timing Parameters: DP8520A/DP8521A/DP8522A (Continued)
TL/F/9338–C2
FIGURE 67. 400: COLINC Page/Static Column Access Timing
TL/F/9338–C3
FIGURE 68. 500: Programming
63
15.0 AC Timing Parameters: DP8520A/21A/22A (Continued)
TL/F/9338–57
FIGURE 69. Graphics Timing Diagram
64
16.0 Functional Differences
between the DP8520A/21A/22A
17.0 DP8520A/21A/22A User Hints
1. All inputs to the DP8520A/21A/22A should be tied high,
low or the output of some other device.
and the DP8520/21/22
1. Extending the Column Address Strobe (CAS)
Note: One signal is active high. COLINC (EXTNDRF) should be tied low
to disable.
2. Each ground on the DP8520A/21A/22A must be decou-
pled to the closest on-chip supply (V ) with 0.1 mF ce-
CAS can be extended indefinitely after AREQ transitions
high in non-interleaved mode only, providing that the user
program the DP8520A/21A/22A with the ECAS0 (negat-
ed) during programming. To extend CAS, the user contin-
ues to assert any or multiple ECASs after negating
AREQ. Extending CAS with RAS negated can be used to
gain RAS precharge time. By negating AREQ, RAS will be
negated. The user can then continue to assert a one or
both of the ECASs, which will keep CAS asserted. By
keeping CAS asserted with RAS negated, the VRAM will
keep the data valid until CAS is negated. Even though
CAS will be extended, DTACK output will always end
from AREQ negated.
CC
ramic capacitor. This is necessary because these
grounds are kept separate inside the DP8520A/21A/
22A. The decoupling capacitors should be placed as
close as possible with short leads to the ground and sup-
ply pins of the DP8520A/21A/22A.
3. The output called ‘‘CAP’’ should have a 0.1 mF capacitor
to ground.
4. The DP8520A/21A/22A has 20X series damping resis-
tors built into the output drivers of RAS, CAS, address
and DT/OE. Space should be provided for external
damping resistors on the printed circuit board (or wire-
wrap board) because they may be needed. The value of
these damping resistors (if needed) will vary depending
upon the output, the capacitance of the load, and the
characteristics of the trace as well as the routing of the
trace. The value of the damping resistor also may vary
between the wire-wrap board and the printed circuit
board. To determine the value of the series damping re-
sistor it is recommended to use an oscilloscope and look
at the furthest VRAM from the DP8520A/21A/22A. The
undershoot of RAS, CAS, DT/OE and the addresses
should be kept to less than 0.5V below ground by varying
the value of the damping resistor. The damping resistors
should be placed as close as possible with short leads to
the driver outputs of the DP8520A/21A/22A.
2. Extending DT/OE Functionality
The DT/OE output will follow the CAS output during a
VRAM read access, and will remain negated during a
VRAM write access. For the DP8520/21/22, the DT/OE
output remained negated for all VRAM access cycles.
This will allow the VRAM to drive the data bus. There are
2 options for the function of the DT/OE output during a
video shift register load operation. With ECAS0 negated
during programming, the DT/OE output will follow the
VSRL input during video shift register load operations.
With the ECAS0 asserted during programming, VSRL will
assert DT/OE. VSRL negated before four rising clock
edges will cause DT/OE to be negated. VSRL asserted
more than four rising clock edges will cause DT/OE to be
negated from the fourth rising clock edge.
5. The circuit board must have a good V
and ground
CC
plane connection. If the board is wire-wrapped, the V
3. Dual Accessing
CC
and ground pins of the DP8520A/21A/22A, the VRAM
associated logic and buffer circuitry must be soldered to
RAS will be asserted either one or two clock periods after
GRANTB has been asserted. The amount of RAS low
and high time, programmed by bits R0 and R1, deter-
mines the number of clock periods after GRANTB chang-
es before RAS will start. This is shown in the table below.
the V
and ground planes.
CC
6. The traces from the DP8520A/21A/22A to the VRAM
should be as short as possible.
7. ECAS0 should be held low during programming if the user
wishes that the DP8520A/21A/22A be compatible with a
DP8520/21/22 design.
RAS
R0, R1 Precharge
Time
RAS Asserted
During
RAS Asserted from
GRANTB Change
Refresh
18.0 Description of a DP8522A/
DP8500 System Interface
Several simple block and timing diagrams are inserted to
help the user design a system interface between the
0, 0
0, 1
1, 0
1, 1
1T
2T
2T
3T
2T
2T
3T
4T
1 Rising Clock Edge
1 Rising Clock Edge
2 Rising Clock Edges
2 Rising Clock Edges
DP8520A/21A/22A VRAM controller and the Raster Graph-
ics Processor DP8500 (as shown in Figure 70). For access-
ing the VRAM, the DP8520A/21A/22A uses the RGP’s
PHI 2 clock as an input clock and it runs in Mode 1 (asyn-
chronous mode). This allows the user to guarantee row, col-
umn and bank address set up times to a rising clock edge
(as shown in timing calculations provided). This system de-
4. Refresh Clock Counter
The refresh clock counter will count and assert RFRQ
externally when it is time to do a refresh. This will occur
even when internal refreshes are disabled. This allows
the user to run the chip in a request/acknowledge mode
for refreshing. ECAS0 is used to program the RFIP output
to act as either refresh request (RFRQ) or RFIP. ECAS0
asserted during programming causes the RFIP output to
function as RFIP. ECAS0 negated during programming
causes the RFIP output to function as RFRQ.
sign uses a PAL to interface the access request logic and
É
the wait logic between the DP8522A and the RGP. External
logic is also needed for plane control.
5. Clearing the Refresh Clock
The refresh clock counter is cleared by negating
DISRFSH and asserting RFSH for at least 500 ns.
65
18.0 Description of a DP8522A/DP8500 System Interface (Continued)
TL/F/9338–C4
FIGURE 70. DP8422A/DP8500 (RGP) Interface Block Diagram
The main idea of the block diagram in Figure 73 is to cause
the video DRAM shift register load operation to happen cor-
rectly. Once the DP8500 (RGP) issues the Display Refresh
REQuest signal (DRREQ) the system knows that the video
shift register load operation should occur at a certain de-
fined time later. In the block diagram this time is controlled
by the counter device. This counter determines when VSRL
transitions high, thereby causing the video shift register load
operation.
Important setup timing parameters which must be met for a
DP8500(RGP)–DP8522A system (assuming RGP is running
e
at 20 MHz (T
50 ns)).
CP
1. Address Setup to ADS Asserted
e
Load
AREQ
b
t
PF373
a
ALV
Ý
1 T
t
Derating the DP8500 Spec for Light
a
Min PAL Delay to Produce ADS &
CP
b
e
e
b
a
b
a
8 ns 2 ns
50 ns
11 ns
38 ns
5 ns
In the upper part of the block diagram is the ‘‘REFRESH’’
output that is used as the ‘‘VSRL’’ input of the DP8522A
and is also used to create ‘‘REFRESH NOT DONE’’. To
creat the ‘‘REFRESH’’ output a NAND latch is used. This
latch is set when a screen refresh is in progress, shown by
the RGP outputs ALE, B0, and B1 all being high. If the
status of the RGP is anything other than screen refresh the
latch is reset. The latch is also reset during a screen refresh
when the load shift register counter times out. This counter
determines when the ‘‘VSRL’’ input of the DP8522A tran-
sitions high, causing the video DRAMs to load a row of data
into their shift registers.
(Using Light Load Timing Specs, the DP8520A/21A/22A
Needs)
9 ns Setup for Row Address to ADS Asserted
11 ns Setup for Bank Address to ADS Asserted
2. ADS Setup to Clock Rising Edge
e
e
e
b
b
b
ALEV
Ý
1 T
t
Max PAL Delay
10 ns
CP
b
26 ns
50 ns
14 ns
(DP8520A/21A/22A Needs 7 ns)
3. WAIT Negated Setup to Clock
The ‘‘REFRESH’’ signal along with the load shift register
counter output ‘‘NOT DONE’’ are used to create the
‘‘REFRESH NOT DONE’’ signal. This output is used for two
purposes. One of which is to hold the ‘‘WAIT’’ output low,
thereby inserting WAIT states into the RGP video shift regis-
ter load access. The other purpose is to hold ‘‘DT/OE’’ low
until ‘‘VSRL’’ transitions high.
e
e
e
b
b
b
Max PAL Delay
1 T
$18
28 ns
CP
b
50 ns
12 ns
10 ns
(The DP8500 Needs 5 ns Setup Time)
Note 1: ‘‘$’’ symbol refers to a DP8520A/21A/22A timing parameter.
Ý
Note 2: ‘‘ ’’ symbol refers to a DP8500 timing parameter.
Note 3: ALE asserted by the RGP (DP8500) should use the system PAL to
assert WAIT in order to guarantee proper setup time. DTACK low should
then be used to negate the WAIT signal through PAL equations.
66
18.0 Description of a DP8522A/DP8500 System Interface (Continued)
TL/F/9338–C5
FIGURE 71. DP8522A/DP8500 (RGP)
Instruction Read Cycle Timing
67
18.0 Description of a DP8522A/DP8500 System Interface (Continued)
TL/F/9338–C6
FIGURE 72. DP8500 (20 MHz)/DP8522A
Write Operand Cycle Timing
TL/F/9338–C7
FIGURE 73. Mid-Scan Line Load Application Example
68
18.0 Description of a DP8522A/DP8500 System Interface (Continued)
69
Physical Dimensions inches (millimeters)
Plastic Chip Carrier (V)
Order Number DP8520AV-20, DP8520AV-25, DP8521AV-20 or DP8521AV-25
NS Package Number V68A
Plastic Chip Carrier (V)
Order Number DP8522AV-20 or DP8522AV-25
NS Package Number V84A
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and whose
failure to perform, when properly used in accordance
with instructions for use provided in the labeling, can
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to the user.
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support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
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