5962R0050102VXX [NSC]

IC 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 2.5 V, MBCY3, METAL CAN, TO-46, 3 PIN, Voltage Reference;
5962R0050102VXX
型号: 5962R0050102VXX
厂家: National Semiconductor    National Semiconductor
描述:

IC 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 2.5 V, MBCY3, METAL CAN, TO-46, 3 PIN, Voltage Reference

输出元件
文件: 总13页 (文件大小:301K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
National Semiconductor is now part of  
Texas Instruments.  
Search http://www.ti.com/ for the latest technical  
information and details on our current products and services.  
July 2007  
LM136A-2.5/LM136-2.5QML  
Reference Diode  
General Description  
The LM136A-2.5/LM136-2.5 integrated circuit is a precision  
2.5V shunt regulator diode. This monolithic IC voltage refer-  
ence operates as a low-temperature-coefficient 2.5V zener  
with 0.2Ω dynamic impedance. A third terminal on the  
LM136-2.5 allows the reference voltage and temperature co-  
efficient to be trimmed easily.  
The LM136-2.5 is useful as a precision 2.5V low voltage ref-  
erence for digital voltmeters, power supplies or op amp cir-  
cuitry. The 2.5V make it convenient to obtain a stable  
reference from 5V logic supplies. Further, since the  
LM136-2.5 operates as a shunt regulator, it can be used as  
either a positive or negative voltage reference.  
Features  
Available with radiation guarantee  
Total Ionizing Dose  
100 krad(Si)  
Low temperature coefficient  
Wide operating current of 400 μA to 10 mA  
Guaranteed temperature stability  
Easily trimmed for minimum temperature drift  
Fast turn-on  
3–lead transistor package  
Ordering Information  
NS Part Number  
LM136H-2.5/883  
SMD Part Number  
NS Package Number  
Package Description  
T0-46, 3LD Metal Can  
H03H  
H03H  
H03H  
H03H  
LM136AH-2.5-SMD  
LM136AH-2.5/883  
8418003XA  
T0-46, 3LD Metal Can  
T0-46, 3LD Metal Can  
T0-46, 3LD Metal Can  
LM136AH-2.5RQV  
(Note 5)  
5962R0050101VXA  
100 krad(Si)  
LM136AH-2.5RLQV  
(Note 6)  
5962R0050102VXA  
100 krad(Si)  
H03H  
T0-46, 3LD Metal Can  
Connection Diagram  
TO-46  
Metal Can Package  
20139720  
Bottom View  
See NS Package Number H03H  
© 2007 National Semiconductor Corporation  
201397  
www.national.com  
Schematic Diagram  
20139701  
www.national.com  
2
Typical Applications  
Adjust to 2.490V  
*Any silicon signal diode  
2.5V Reference  
Wide Input Range Reference  
20139709  
2.5V Reference with Minimum  
Temperature Coefficient  
20139711  
20139710  
3
www.national.com  
Absolute Maximum Ratings (Note 1)  
Reverse Current  
Forward Current  
15 mA  
10 mA  
Storage Temperature  
−60°C TA +150°C  
−55°C TA +125°C  
+150°C  
Operating Temperature Range (Note 2)  
Maximum Junction Temperature (TJ)(Note 2)  
Lead Temperature (Soldering 10 seconds)  
Thermal Resistance  
ꢀθJA  
300°C  
Still Air Flow  
500LF/Min Air Flow  
354°C/W  
77°C/W  
46°C/W  
ꢀθJC  
ESD Rating (Note 3)  
1,000V  
Quality Conformance Inspection  
Mil-Std-883, Method 5005 - Group A  
Subgroup  
Description  
Static tests at  
Temp°C  
1
2
25  
125  
-55  
25  
Static tests at  
3
Static tests at  
4
Dynamic tests at  
Dynamic tests at  
Dynamic tests at  
Functional tests at  
Functional tests at  
Functional tests at  
Switching tests at  
Switching tests at  
Switching tests at  
Settling time at  
Settling time at  
Settling time at  
5
125  
-55  
25  
6
7
8A  
8B  
9
125  
-55  
25  
10  
11  
12  
13  
14  
125  
-55  
25  
125  
-55  
LM136-2.5 Electrical Characteristics  
DC Parameters  
The following conditions apply, unless otherwise specified. IR = 1mA  
Sub-  
groups  
Symbol  
IAdj  
Parameter  
Adjust Current  
Conditions  
VAdj = 0.7V  
Notes  
Min Max  
Unit  
-125 +125  
6.0  
µA  
mV  
mV  
V
1, 2, 3  
1
Delta VZ  
Delta Zener Voltage  
0.4mA IZ 10 mA  
10  
2, 3  
1
VZ  
Zener Voltage  
VAdj = Open  
2.44 2.54  
2.42 2.56  
2.39 2.49  
2.29 2.49  
2.49 2.69  
1.0  
V
2, 3  
1
VAdj = 0.7V  
VAdj = 1.9V  
V
V
2, 3  
1, 2, 3  
1, 2, 3  
2, 3  
V
ZRD  
Reverse Dynamic Impedance  
Temperature Stability  
(Note 4)  
mV  
VStab  
VZ = Adjusted to 2.490V  
18  
www.national.com  
4
LM136A-2.5 Electrical Characteristics  
DC Parameters  
The following conditions apply, unless otherwise specified. IR = 1mA  
Sub-  
groups  
Symbol  
IAdj  
Parameter  
Adjust Current  
Conditions  
VAdj = 0.7V  
Notes  
Min Max  
Unit  
-125 +125  
6.0  
µA  
mV  
mV  
V
1, 2, 3  
1
Delta VZ  
Delta Zener Voltage  
0.4mA IZ 10 mA  
10  
2, 3  
1
VZ  
Zener Voltage  
VAdj = Open  
2.465 2.515  
2.44 2.54  
2.39 2.49  
2.29 2.49  
2.49 2.69  
0.6  
V
2, 3  
1
VAdj = 0.7V  
VAdj = 1.9V  
V
V
2, 3  
1, 2, 3  
1
V
ZRD  
Reverse Dynamic Impedance  
Temperature Stability  
(Note 4)  
(Note 4)  
1.0  
2, 3  
2, 3  
VStab  
VZ = Adjusted to 2.490V  
18  
mV  
DC Drift Parameters  
Delta calculations are performed on QMLV devices at Group B, Subgroup 5 only.  
Symbol Parameter Conditions  
VZ Zener Voltage VAdj = Open  
Sub-  
groups  
Notes  
Min Max  
Unit  
−10 +10  
−10 +10  
−10 +10  
mV  
mV  
mV  
1
1
1
VAdj = 0.7V  
VAdj = 1.9V  
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is  
functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed  
specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test  
conditions.  
Note 2: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature), θJA (package  
junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is PDmax = (TJmax - TA)/  
θ
JA or the number given in the Absolute Maximum Ratings, whichever is lower.  
Note 3: Human body model, 1.5Kin series with 100pF.  
Note 4: Parameter tested go-no-go only.  
Note 5: Pre and post irradiation limits are identical to those listed under DC electrical characteristics. These parts may be dose rate sensitive in a space  
environment and may demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters are guaranteed only for the conditions as  
specified in Mil-Std-883, Method 1019.  
Note 6: Low dose rate testing has been performed on a wafer-by-wafer basis, per test method 1019 condition D of MIL-STD-883, with no enhanced low dose  
rate sensitivity (ELDRS) effect.  
5
www.national.com  
Typical Performance Characteristics  
Reverse Voltage Change  
Zener Noise Voltage  
20139722  
20139721  
Dynamic Impedance  
Response Time  
20139724  
20139723  
Reverse Characteristics  
Forward Characteristics  
20139725  
20139726  
www.national.com  
6
Temperature Drift  
20139728  
FIGURE 1. LM136 With Pot for Adjustment  
of Breakdown Voltage  
20139727  
(Trim Range = ±120 mV typical)  
Application Hints  
The LM136 series voltage references are much easier to use  
than ordinary zener diodes. Their low impedance and wide  
operating current range simplify biasing in almost any circuit.  
Further, either the breakdown voltage or the temperature co-  
efficient can be adjusted to optimize circuit performance.  
Figure 1 shows an LM136 with a 10k potentiometer for ad-  
justing the reverse breakdown voltage. With the addition of  
R1 the breakdown voltage can be adjusted without affecting  
the temperature coefficient of the device. The adjustment  
range is usually sufficient to adjust for both the initial device  
tolerance and inaccuracies in buffer circuitry.  
If minimum temperature coefficient is desired, two diodes can  
be added in series with the adjustment potentiometer as  
shown in Figure 2. When the device is adjusted to 2.490V the  
temperature coefficient is minimized. Almost any silicon sig-  
nal diode can be used for this purpose such as a 1N914,  
1N4148 or a 1N457. For proper temperature compensation  
the diodes should be in the same thermal environment as the  
LM136. It is usually sufficient to mount the diodes near the  
LM136 on the printed circuit board. The absolute resistance  
of R1 is not critical and any value from 2k to 20k will work.  
20139729  
FIGURE 2. Temperature Coefficient Adjustment  
(Trim Range = ±70 mV typical)  
Low Cost 2 Amp Switching Regulator†  
20139705  
*L1 60 turns #16 wire on Arnold Core A-254168-2  
Efficiency ≈ 80%  
7
www.national.com  
Precision Power Regulator with Low Temperature Coefficient  
20139713  
5V Crowbar  
Trimmed 2.5V Reference with  
Temperature Coefficient Independent  
of Breakdown Voltage  
20139715  
*Does not affect temperature coefficient  
20139714  
Adjustable Shunt Regulator  
20139706  
www.national.com  
8
Linear Ohmmeter  
20139716  
Op Amp with Output Clamped  
Bipolar Output Reference  
20139717  
20139718  
9
www.national.com  
2.5V Square Wave Calibrator  
Low Noise Buffered Reference  
20139719  
20139731  
5V Buffered Reference  
20139730  
www.national.com  
10  
Revision History  
Date Released  
Revision  
Section  
Originator  
Changes  
07/06/07  
A
New Release, Corporate format  
L. Lytle  
2 MDS datasheets converted into one  
corporate datasheet format. MNLM136–2.5–X  
Rev 0A0 and MNLM136A-2.5–X-RH. The  
ELDRS Part has also been added. Rev. 0E0  
will be archived.  
11  
www.national.com  
Physical Dimensions inches (millimeters) unless otherwise noted  
NS Package Number H03H  
THE CONTENTS OF THIS DOCUMENT ARE PROVIDED IN CONNECTION WITH NATIONAL SEMICONDUCTOR CORPORATION  
(“NATIONAL”) PRODUCTS. NATIONAL MAKES NO REPRESENTATIONS OR WARRANTIES WITH RESPECT TO THE ACCURACY  
OR COMPLETENESS OF THE CONTENTS OF THIS PUBLICATION AND RESERVES THE RIGHT TO MAKE CHANGES TO  
SPECIFICATIONS AND PRODUCT DESCRIPTIONS AT ANY TIME WITHOUT NOTICE. NO LICENSE, WHETHER EXPRESS,  
IMPLIED, ARISING BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS  
DOCUMENT.  
TESTING AND OTHER QUALITY CONTROLS ARE USED TO THE EXTENT NATIONAL DEEMS NECESSARY TO SUPPORT  
NATIONAL’S PRODUCT WARRANTY. EXCEPT WHERE MANDATED BY GOVERNMENT REQUIREMENTS, TESTING OF ALL  
PARAMETERS OF EACH PRODUCT IS NOT NECESSARILY PERFORMED. NATIONAL ASSUMES NO LIABILITY FOR  
APPLICATIONS ASSISTANCE OR BUYER PRODUCT DESIGN. BUYERS ARE RESPONSIBLE FOR THEIR PRODUCTS AND  
APPLICATIONS USING NATIONAL COMPONENTS. PRIOR TO USING OR DISTRIBUTING ANY PRODUCTS THAT INCLUDE  
NATIONAL COMPONENTS, BUYERS SHOULD PROVIDE ADEQUATE DESIGN, TESTING AND OPERATING SAFEGUARDS.  
EXCEPT AS PROVIDED IN NATIONAL’S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, NATIONAL ASSUMES NO  
LIABILITY WHATSOEVER, AND NATIONAL DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY RELATING TO THE SALE  
AND/OR USE OF NATIONAL PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR  
PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY  
RIGHT.  
LIFE SUPPORT POLICY  
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR  
SYSTEMS WITHOUT THE EXPRESS PRIOR WRITTEN APPROVAL OF THE CHIEF EXECUTIVE OFFICER AND GENERAL  
COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:  
Life support devices or systems are devices which (a) are intended for surgical implant into the body, or (b) support or sustain life and  
whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected  
to result in a significant injury to the user. A critical component is any component in a life support device or system whose failure to perform  
can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness.  
National Semiconductor and the National Semiconductor logo are registered trademarks of National Semiconductor Corporation. All other  
brand or product names may be trademarks or registered trademarks of their respective holders.  
Copyright© 2007 National Semiconductor Corporation  
For the most current product information visit us at www.national.com  
National Semiconductor  
Americas Customer  
Support Center  
National Semiconductor Europe  
Customer Support Center  
Fax: +49 (0) 180-530-85-86  
National Semiconductor Asia  
Pacific Customer Support Center  
Email: ap.support@nsc.com  
National Semiconductor Japan  
Customer Support Center  
Fax: 81-3-5639-7507  
Email:  
new.feedback@nsc.com  
Tel: 1-800-272-9959  
Email: europe.support@nsc.com  
Deutsch Tel: +49 (0) 69 9508 6208  
English Tel: +49 (0) 870 24 0 2171  
Français Tel: +33 (0) 1 41 91 8790  
Email: jpn.feedback@nsc.com  
Tel: 81-3-5639-7560  
www.national.com  

相关型号:

5962R0051601VHA

Aerospace +5V Precision Voltage Reference
ADI

5962R0051701VCA

Operational Amplifier
ETC

5962R0051701VDA

Operational Amplifier
ETC

5962R0052001QVC

Radiation Hardened 8-Channel Source Driver
INTERSIL

5962R0052001V9A

Radiation Hardened 8-Channel Source Driver
INTERSIL

5962R0052001VVC

Radiation Hardened 8-Channel Source Driver
INTERSIL

5962R0052002V9A

Radiation Hardened 8-Channel Source Driver
INTERSIL

5962R0052002VVC

Radiation Hardened 8-Channel Source Driver
INTERSIL

5962R0052402VGA

电压比较器 | LMC | 8 | -55 to 125
TI

5962R0052402VHA

电压比较器 | NAD | 10 | -55 to 125
TI

5962R0052402VPA

电压比较器 | NAB | 8 | -55 to 125
TI

5962R0052402VZA

电压比较器 | NAC | 10 | -55 to 125
TI