5962-9175801MXA [NSC]
IC OP-AMP, 3500 uV OFFSET-MAX, 300 MHz BAND WIDTH, CDSO8, CERAMIC, SOIC-10, Operational Amplifier;
| 型号： | 5962-9175801MXA |
| 厂家： | 
National Semiconductor |
| 描述： | IC OP-AMP, 3500 uV OFFSET-MAX, 300 MHz BAND WIDTH, CDSO8, CERAMIC, SOIC-10, Operational Amplifier 放大器 CD |
| 文件： | 总17页 (文件大小：282K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MICROCIRCUIT DATA SHEET
Original Creation Date: 05/16/00
Last Update Date: 05/31/00
Last Major Revision Date:
MNCLC420A-X-RH REV 0A0
HIGH SPEED, VOLTAGE FEEDBACK OPERATIONAL AMPLIFIER:
ALSO AVAILABLE GUARANTEED TO 300K RAD(Si) TESTED TO
MIL-STD-883, METHOD 1019.5
General Description
The CLC420A is an operational amplifier designed for applications requiring matched inputs
and integration or transimpedance amplification. Utilizing voltage feedback architecture,
the CLC420A offers a 300MHz bandwidth, a 1100V/us slew rate and a 4mA supply current
(power consumption of 40mW, +5V supplies).
Applications such as differential amplifiers will benefit from 70dB common mode rejection
ratio and an input offset current of 0.2uA(typ). With its unity-gain stability,
2pA/SqRtHz current noise(typ), combined with a settling time of 18ns to 0.01% make the
CLC420A ideal for D/A converters, pin diode receivers and photo multiplier amplifiers.
All applications will find 70dB power supply rejection ratio attractive.
Industry Part Number
NS Part Numbers
CLC420A
CLC420AE-QML
CLC420AJ-QML
CLC420AJFQML
CLC420AWG-QML
CLC420AWGFQML
Prime Die
UB1366A
Controlling Document
SEE FEATURES SECTION
Processing
Subgrp Description
Temp (oC)
MIL-STD-883, Method 5004
1
Static tests at
+25
2
Static tests at
+125
-55
3
Static tests at
4
Dynamic tests at
Dynamic tests at
Dynamic tests at
Functional tests at
Functional tests at
Functional tests at
Switching tests at
Switching tests at
Switching tests at
+25
Quality Conformance Inspection
5
+125
-55
6
MIL-STD-883, Method 5005
7
+25
8A
8B
9
+125
-55
+25
10
11
+125
-55
1
MICROCIRCUIT DATA SHEET
MNCLC420A-X-RH REV 0A0
Features
- 300MHz small signal bandwidth
- 1100V/us slew rate
- Unity-gain stability
- Low distortion, -60dBc at 20MHz
- 0.01% settling in 18ns
- 0.2uA input offset current
- 2pASqRtHz current noise
CONTROLLING DOCUMENTS:
CLC420AE-QML
CLC420AJ-QML
CLC420AJFQML
CLC420AWG-QML
CLC420AWGFQML
5962-9175801M2A
5962-9175801MPA
5962F9175801MPA
5962-9175801MXA
5962F9175801MXA
Applications
- Active filters/integrators
- Differential amplifiers
- Pin diode receivers
- Log amplifiers
- D/A converters
- Photo multiplier amplifiers
2
MICROCIRCUIT DATA SHEET
MNCLC420A-X-RH REV 0A0
(Absolute Maximum Ratings)
(Note 1)
Supply Voltage (V+)
+7 Vdc
70 mA
V+
Output Current (Iout)
Common Mode Input Voltage (Vcm)
Differential Input Voltage
10 V
Power Dissipation (Pd)
(Note 2)
112 mW
Thermal Resistance
(ThetaJA) Junction to Ambient
LCC
(Still Air)
(500 LFPM)
(Still Air)
(500 LFPM)
(Still Air)
(500 LFPM)
100 C/W
68 C/W
Ceramic DIP
Ceramic SOIC
125 C/W
72 C/W
205 C/W
125 C/W
(ThetaJC) Junction to Case
LCC
25 C/W
23 C/W
24 C/W
Ceramic DIP
Ceramic SOIC
Junction Temperature (Tj)
+175 C
Storage Temperature Range
-65 C < Ta < +150 C
+300 C
Lead Temperature
(Soldering, 10 seconds)
Package Weight
(Typical)
Ceramic SOIC
Ceramic DIP
LCC
220 mg
1075 mg
470 mg
ESD Tolerance
(Note 3)
ESD Rating
2000V
Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur.
Operating Ratings are conditions for which the device is functional, but do not
guarantee specific performance limits. For guaranteed specifications and test
conditions see the Electrical Characteristics. The guaranteed specifications apply
only for the test conditions listed. Some performance characteristics may degrade
when the device is not operated under the listed test conditions.
Note 2: The maximum power dissipation must be derated at elevated temperatures and is
dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to
ambient thermal resistance), and TA (ambient temperature). The maximum allowable
power dissipation at any temperature is Pdmax = (Tjmax - TA)/ThetaJA or the number
given in the Absolute Maximum Ratings, whichever is lower.
Note 3: Human body model, 100pF discharged through 1.5K Ohms.
3
MICROCIRCUIT DATA SHEET
MNCLC420A-X-RH REV 0A0
Recommended Operating Conditions
Supply Voltage (V+)
+5 Vdc
+1 to +10
-55 C < Ta < +125 C
Gain Range (Av)
Operating Temperature Range
4
MICROCIRCUIT DATA SHEET
MNCLC420A-X-RH REV 0A0
Electrical Characteristics
DC PARAMETERS: Open Loop Characteristics (SEE NOTE 4)
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: V+ = +5 Vdc, Av = +1, Load Resistance Rl = 100 Ohms, tested parameters use Rs = 500 Ohms, otherwise,
feedback resistance (Rf) = 0 Ohms. Temp. Range: -55 C < TA < +125 C. (Note 3)
PIN-
NAME
SUB-
SYMBOL
+Iin
PARAMETER
CONDITIONS
NOTES
MIN
-10
MAX UNIT
GROUPS
Input Bias
4
+10
uA
uA
uA
uA
mV
mV
mV
1, 2
Current
(NonInverting)
4
-20
+20
+10
+20
+2.0
+3.5
+3.2
60
3
-Iin
Vio
Input Bias
Current
(Inverting)
4
-10
1, 2
4
-20
3
1
2
3
Input Offset
Voltage
4
-2.0
-3.5
-3.2
4
4
Tc (+Iin)
Tc (-Iin)
Tc (Vio)
Iio
Average +Input
Bias Current
Drift
1, 4
1, 4
1, 4
1, 4
1, 4
nA/C 2
nA/C 3
nA/C 2
nA/C 3
uV/C 2, 3
120
60
Average -Input
Bias Current
Drift
120
15
Average Input
Offset Voltage
Drift
Input Offset
Current
4
-1.0
-2.0
-3.0
1.0
2.0
3.0
10
uA
uA
uA
1
2
3
4
4
Tc (Iio)
Aol
Average Input
Offset Current
Drift
1, 4
nA/C 2
nA/C 3
1, 4
20
Open Loop Gain
4
4
4
56
52
dB
dB
mA
1, 2
3
Icc
Quiescent Supply
Current (No Load)
5.0
1, 2,
3
PSRR
Power Supply
V+ = +4.5V to +5.0V,
4
60
55
65
60
1
dB
dB
dB
dB
1, 2
3
Rejection Ratio
V- = -4.5V to -5.0V
4
CMRR
Rind
Cind
Common Mode
Rejection Ratio
Vcm = +1V
4
1, 2
3
4
Differential Mode
Input Resistance
1, 4
1, 4
1, 4
MOhm 4, 5
MOhm 6
0.5
Differential Mode
Input Capacitance
2
pF
4, 5,
6
5
MICROCIRCUIT DATA SHEET
(Continued)
MNCLC420A-X-RH REV 0A0
Electrical Characteristics
DC PARAMETERS: Open Loop Characteristics (SEE NOTE 4)
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: V+ = +5 Vdc, Av = +1, Load Resistance Rl = 100 Ohms, tested parameters use Rs = 500 Ohms, otherwise,
feedback resistance (Rf) = 0 Ohms. Temp. Range: -55 C < TA < +125 C. (Note 3)
PIN-
NAME
SUB-
GROUPS
SYMBOL
Rinc
PARAMETER
CONDITIONS
NOTES
MIN
0.5
MAX UNIT
Common Mode Input
Resistance
1, 4
1, 4
1, 4
MOhm 4, 5
MOhm 6
0.25
Cinc
+Vcm
Common Mode Input
Capacitance
2
pF
4, 5,
6
Common Mode Input
Voltage
1, 4
1, 4
1, 4
1, 4
1, 4
1, 4
1, 4
1, 4
1, 4
1, 4
4
+2.8
+2.5
V
4, 5
6
V
-Vcm
+Iout
-Iout
Rout
+Vo
Common Mode Input
Voltage
-2.8
-2.5
V
4, 5
6
V
Output Current
+50
+30
mA
mA
mA
mA
4, 5
6
Output Current
-50
-30
0.2
0.3
4, 5
6
Output Impedance At dc
Ohm 4, 5
Ohm 6
Output Voltage
Swing
No Load
+3
V
V
V
1, 2
3
4
+2.8
+2.5
Rl = 100 Ohms
No Load
4
1, 2,
3
-Vo
Output Voltage
Swing
4
4
4
4
-3
V
V
V
V
1, 2
3
-2.8
-2.5
-2.2
Rl = 100 Ohms
1, 2
3
6
MICROCIRCUIT DATA SHEET
MNCLC420A-X-RH REV 0A0
Electrical Characteristics
AC PARAMETERS: Frequency Domain Response (SEE NOTE 4)
(The following conditions apply to all the following parameters, unless otherwise specified.)
AC: V+ = +5 Vdc, Av = +1, Load Resistance Rl = 100 Ohms, tested parameters use Rs = 500 Ohms, otherwise,
feedback resistance (Rf) = 0 Ohms. Temp. Range: -55 C < TA < +125 C. (Note 3)
PIN-
NAME
SUB-
SYMBOL
GFPL
PARAMETER
CONDITIONS
NOTES
MIN
MAX UNIT
GROUPS
Gain Flatness
Peaking Low
At 0.1 MHz to 100 MHz, Vout < 0.4 Vpp
4
1.4
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
4
4
1.6
1.4
3.0
3.0
5.0
1.0
2.0
1.4
1.6
1.4
5
4
6
GFPH
GFR
Gain Flatness
Peaking High
At 100 MHz, Vout < 0.4 Vpp
4
4
4
5
4
6
Gain Flatness
Rolloff
At 0.1 MHz to 100 MHz, Vout < 0.4 Vpp
4
4, 6
4
5
4
5
6
At 0.1 MHz to 30 MHz, Av = -1,
Rf = 500 Ohms, Vout < 0.4 Vpp
4
4
4
SSBW
Small Signal
Bandwidth
-3dB bandwidth, Vout < 0.4 Vpp
1, 4
1, 4
4
200
MHz 4, 6
MHz 5
130
65
65
45
25
20
35
30
-3dB bandwidth, Av = -1,
Rf = 500 Ohms, Vout < 0.4 Vpp
MHz 4
4
MHz 6
4
MHz 5
LSBW
Lpd
Large Signal
Bandwidth
-3dB bandwidth, Vout < 5Vpp
1, 4
1, 4
1, 4
1, 4
1, 4
1, 4
MHz 4
MHz 5, 6
MHz 4
-3dB bandwidth, Av = -1,
Rf = 500 Ohms, Vout < 5 Vpp
MHz 5, 6
Deg. 4, 6
Deg. 5
Linear Phase
Deviation
At 0.1 MHz to 100 MHz
1.8
2.5
7
MICROCIRCUIT DATA SHEET
MNCLC420A-X-RH REV 0A0
Electrical Characteristics
AC PARAMETERS: Distortion and Noise (SEE NOTE 4)
(The following conditions apply to all the following parameters, unless otherwise specified.)
AC: V+ = +5 Vdc, Av = +1, Load Resistance Rl = 100 Ohms, tested parameters use Rs = 500 Ohms, otherwise,
feedback resistance (Rf) = 0 Ohms. Temp. Range: -55 C < TA < +125 C. (Note 3)
PIN-
NAME
SUB-
GROUPS
SYMBOL
HD2
PARAMETER
CONDITIONS
2 Vpp at 20 MHz
NOTES
MIN
MAX UNIT
2nd Harmonic
Distortion
4
-40 dBc 4
4
-40
-40
-40
-45
-40
-40
-35
-40
5.3
dBc 5, 6
dBc 4
2 Vpp at 20 MHz, Av = -1
2 Vpp at 20 MHz
4
4
dBc 5, 6
dBc 4, 6
dBc 5
HD3
3rd Harmonic
Distortion
4
4
2 Vpp at 20 MHz, Av = -1
4
dBc 4
4
dBc 5
4
dBc 6
Vn
Input Referred
Noise Voltage
At 1 MHz to 200 MHz
At 1 MHz to 200 MHz
1, 4
mV/ 4, 6
Hz
1, 4
1, 4
1, 4
1, 4
6
mV/ 5
Hz
Icn
Input Referred
Noise Current
2.6
2.3
2.9
pA/ 4
Hz
pA/ 5
Hz
pA/ 6
Hz
8
MICROCIRCUIT DATA SHEET
MNCLC420A-X-RH REV 0A0
Electrical Characteristics
AC PARAMETERS: Time Domain Response (SEE NOTE 4)
(The following conditions apply to all the following parameters, unless otherwise specified.)
AC: V+ = +5 Vdc, Av = +1, Load Resistance Rl = 100 Ohms, tested parameters use Rs = 500 Ohms, otherwise,
feedback resistance (Rf) = 0 Ohms. Temp. Range: -55 C < TA < +125 C. (Note 3)
PIN-
NAME
SUB-
SYMBOL
Trs
PARAMETER
CONDITIONS
NOTES
MIN
MAX UNIT
GROUPS
Rise and Fall
Time
0.4 V step, Cl < 10pF, measured
between 10% and 90% points
1, 4
1, 4
1, 4
1, 4
1, 4
1, 4
1, 4
1, 4
1, 4
2
3
nS
nS
9, 11
10
0.4 V step, Av = -1, Rf = 500 Ohms,
Cl < 10 pF, measured between 10% and
90% points
5.5
7.8
20
nS
nS
nS
nS
nS
nS
nS
9, 11
10
Trl
Ts
Rise and Fall
Time
5 V step Cl < 10 pF, measured between
10% and 90% points
9, 10
11
25
5 V step, Av = -1, Rf = 500 Ohms,
Cl < 10 pF, measured between 10% and
90% points
9.5
10
9
10, 11
Settling Time
2V step at 0.01% of the final value,
Cl < 10 pF
25
9, 10,
11
2V step at 0.1% of the final value,
Cl < 10 pF
1, 4
18
nS
9, 10,
11
Os
Overshoot
Slew Rate
0.4 V step, Cl < 10 pF
1, 4
1, 4
1, 4
1, 4
1, 4
1, 4
1, 4
1, 4
1, 4
1, 4
25
35
%
%
9, 10
11
+Sr
Rising edge, Measured +1 V with 5 V
step, Cl < 10 pF
750
V/uS 9
600
500
430
750
600
500
430
V/uS 10, 11
V/uS 9
Rising edge, Av = -1, Measured +1 V
with 5 V step, Rf = 500 Ohms,
Cl = < 10 pF
V/uS 10, 11
V/uS 9
-Sr
Slew Rate
Falling Edge, Measured +1 V with 5 V
step, Cl < 10 pF
V/uS 10, 11
V/uS 9
Falling Edge, Av = -1, Measured +1 V
with 5 V step, Rf = 500 Ohms,
Cl < 10 pF
V/uS 10, 11
Note 1: If not tested, shall be guaranteed to the limits specified.
Note 2: Group A testing only.
Note 3: The algebraic convention, whereby the most negative value is a minimum and the most
positive is a maximum, is used in this table. Negative current shall be defined as
conventional flow out of a device terminal.
Note 4: Pre and post irradiation limits are identical to those listed under AC and DC
electrical characteristics except as listed in the Post Radiation Limits Table. These
parts may be dose rate sensitive in a space environment and demonstrate enhanced low
dose rate effect. Radiation end point limits for the noted parameters are guaranteed
only for the conditions as specified in MIL-STD-883, Method 1019.5
9
MICROCIRCUIT DATA SHEET
MNCLC420A-X-RH REV 0A0
Graphics and Diagrams
GRAPHICS#
DESCRIPTION
07070HRA2
07081HRA3
07086HRA2
E20ARE
CERAMIC SOIC (WG), 10 LEAD (B/I CKT)
CERDIP (J), 8 LEAD (B/I CKT)
LCC (E), TYPE C, 20 TERMINAL (B/I CKT)
LCC (E), TYPE C, 20 TERMINAL(P/P DWG)
CERDIP (J), 8 LEAD (P/P DWG)
J08ARL
P000376A
P000430A
P000444A
WG10ARC
CERAMIC SOIC, 10 LEAD (PINOUT)
CERDIP (J), 8 LEAD (PINOUT)
LCC (E), TYPE C, 20 TERMINAL (PINOUT)
CERAMIC SOIC (WG), 10 LEAD (P/P DWG)
See attached graphics following this page.
10
NC
Vinv
1
2
3
4
5
10
9
NC
+Vcc
NC
V
8
NC
Vnon-inv
-VCC
7
OUTPUT
6
NC
CLC420AWG-QML
10 - LEAD CERAMIC SOIC
CONNECTION DIAGRAM
TOP VIEW
P000376A
N
MIL/AEROSPACE OPERATIONS
2900 SEMICONDUCTOR DRIVE
SANTA CLARA, CA 95050
N/C
+V
1
2
3
4
8
7
6
5
N/C
V
INV
CC
V
V
OUT
NON-INV
N/C
-V
CC
CLC420J
8 - LEAD DIP
CONNECTION DIAGRAM
TOP VIEW
P000430A
MIL/AEROSPACE OPERATIONS
2900 SEMICONDUCTOR DRIVE
SANTA CLARA, CA 95050
N/C
20
N/C
19
N/C
1
N/C
2
N/C
3
N/C
N/C
V
N/C
N/C
+V
4
5
6
7
8
18
17
16
15
14
INV
CC
N/C
N/C
V
V
OUT
NON-INV
9
10
11
12
13
-V
N/C
N/C
N/C
N/C
CC
CLC420E
20 - LEAD LCC
CONNECTION DIAGRAM
TOP VIEW
P000444A
MIL/AEROSPACE OPERATIONS
2900 SEMICONDUCTOR DRIVE
SANTA CLARA, CA 95050
MICROCIRCUIT DATA SHEET
MNCLC420A-X-RH REV 0A0
Revision History
Rev ECN # Rel Date Originator Changes
0A0
M0003713 05/31/00
Rose Malone
Initial MDS Release: MNCLC420A-X-RH, Rev. 0A0. Added
Rad Hard Devices. and Added Min. limits to Iio test.
Changed Subgroup 3 test limit from 2.6uA to 3.0uA to
improve test yields. Replaces MDS: MNCLC420A-X, Rev.
0B0
11
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