54ACTQ541 [NSC]
Quiet Series Octal Buffer/Line Driver with TRI-STATE Outputs; 与三态输出静音系列八路缓冲器/线路驱动器
| 型号： | 54ACTQ541 |
| 厂家： | 
National Semiconductor |
| 描述： | Quiet Series Octal Buffer/Line Driver with TRI-STATE Outputs |
| 文件： | 总6页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
September 1998
54ACTQ541
Quiet Series Octal Buffer/Line Driver with TRI-STATE®
Outputs
General Description
Features
n Non-inverting buffers
The ’ACTQ541 is an octal buffer and line driver with
TRI-STATE outputs designed to be employed as a memory
and address driver, clock driver, or bus-oriented transmitter/
receiver.
n Guaranteed simultaneous switching noise level and
dynamic threshold performance
n Flow-through pinout for ease of PC board layout
™
The ’ACTQ541 is similar to the ’ACTQ244 while providing
flow-through architecture (inputs on opposite sides from out-
puts). This pinout arrangement makes this device especially
useful as an output port for microprocessors, allowing ease
of layout and greater PC board density.
n Non-inverting TRI-STATE outputs
n TTL compatible inputs
n CMOS power consumption
n Output source/sink 24 mA
n Standard Microcircuit Drawing (SMD) 5962-9682901
The ’ACTQ541 utilizes NSC Quiet Series technology to
guarantee quiet output switching and improved dynamic
™
threshold performance. FACT Quiet Series
features
™
GTO output control and undershoot corrector in addition to
a split ground bus for superior ACMOS performance.
Connection Diagram
Pin Names
OE1, OE2
I0–I7
Description
Output Enable Input (Active Low)
Inputs
Pin Assignment
DIP and Cerpack
O0–O7
Outputs
Truth Table
Inputs
OE2
Outputs
OE1
L
I
ACTQ541
L
X
H
L
H
X
X
L
H
Z
Z
L
H
X
L
DS100983-1
=
=
=
=
H
L
X
Z
HIGH Voltage Level
LOW Voltage Level
Immaterial
Pin Assignment
LCC
High Impedance
DS100983-30
™
GTO is a trademark of National Semiconductor Corporation.
TRI-STATE® is a registered trademark of National Semiconductor Corporation.
™
™
FACT and FACT Quiet Series are trademarks of Fairchild Semiconductor Corporation.
© 1998 National Semiconductor Corporation
DS100983
www.national.com
±
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Source or Sink Current
Junction Temperature (TJ)
CDIP
300 mA
175˚C
Recommended Operating
Conditions
Free Air Ambient Temperature
Military
Supply Voltage (VCC
)
−0.5V to +7.0V
DC Input Diode Current (IIK
)
=
VI −0.5V
−20 mA
+20 mA
=
VI VCC + 0.5V
−55˚C to +125˚C
DC Input Voltage (VI)
−0.5V to VCC + 0.5V
Supply Voltage
DC Output Diode Current (IOK
)
Military
+4.5V to +5.5V
(∆V/∆t)
=
VO −0.5V
−20 mA
+20 mA
Minimum Input Edge Rate
’ACTQ Devices
=
VO VCC + 0.5V
125 mV/ns
DC Output Voltage (VO
DC Output Source
)
−0.5V to VCC + 0.5V
VIN from 0.8 to 2.0V
VCC 4.5V, 5.5V
Note 1: Absolute maximum ratings are values beyond which the device may
be damaged or have its useful life impaired. Functional operation under these
conditions is not implied.
±
±
or Sink Current (IO
)
50 mA
DC VCC or Ground Current
per Output Pin (ICC or IGND
)
50 mA
Note 2: Either voltage limit or current limit is sufficient to protect inputs.
Storage Temperature (TSTG
DC Latch-Up
)
−65˚C to +150˚C
DC Electrical Characteristics for ’ACTQ Family Devices
54ACTQ
=
Symbol
Parameter
VCC
(V)
TA
Units
Conditions
−55˚C to +125˚C
Guaranteed Limits
=
VIH
VIL
Minimum High Level
Input Voltage
4.5
5.5
4.5
5.5
4.5
5.5
2.0
2.0
0.8
0.8
4.4
5.4
V
V
V
VOUT 0.1V
or VCC − 0.1V
=
Maximum Low Level
Input Voltage
VOUT 0.1V
or VCC − 0.1V
=
VOH
Minimum High Level
Output Voltage
IOUT −50 µA
(Note 3)
=
VIN VILor VIH
4.5
5.5
4.5
5.5
3.70
4.70
0.1
V
V
IOH = −24 mA
IOH = −24 mA
=
VOL
Maximum Low Level
Output Voltage
IOUT 50 µA
0.1
(Note 3)
=
VIN VILor VIH
4.5
5.5
5.5
0.50
0.50
V
IOL = 24 mA
IOL = 24 mA
=
±
IIN
Maximum Input
Leakage Current
1.0
µA
VI VCC, GND
±
IOZ
TRI-STATE Output Leakage
Current, High or Low
5.5
5.5
10.0
µA
OE = 2.0V
=
VI VCC − 2.1V
ICCT
Maximum
1.6
mA
I
CC/Input
=
VOLD 1.65V Max
IOLD
IOHD
ICC
Minimum Dynamic
Output Current (Note 4)
Maximum Quiescent
Supply Current
5.5
5.5
5.5
50
mA
mA
µA
=
VOHD 3.85V Min
−50
=
160.0
VIN VCC
or GND (Note 4)
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2
DC Electrical Characteristics for ’ACTQ Family Devices (Continued)
54ACTQ
=
Symbol
Parameter
VCC
(V)
TA
Units
Conditions
−55˚C to +125˚C
Guaranteed Limits
1.5
VOLP
Quiet Output Maximum
Dynamic VOL
5.0
5.0
V
V
(Note 4)
VOLV
Quiet Output Minimum
Dynamic VOL
-1.2
(Note 5)
Note 3: All outputs loaded; thresholds on input associated with output under test.
Note 4: Maximum test duration 2.0 ms, one output loaded at a time.
@
Note 5: Max number of outputs defined as (n). Data inputs are 0V to 3V. One output GND.
AC Electrical Characteristics
54ACTQ
=
TA −55˚C to +125˚C
Fig.
No.
=
Symbol
Parameter
VCC 4.5V–5.5V
Units
=
CL 50 pF
Min
2.0
2.0
1.5
1.5
1.5
1.5
Max
9.0
tPLH
tPHL
tPZH
tPZL
tPHZ
tPLZ
Propagation Delay
ns
ns
ns
Data to Outputs
9.0
Output Enable Time
9.5
11.5
9.5
Output Disable Time
9.5
Capacitance
Symbol
Parameter
Max
Units
Conditions
=
TA 25˚C
=
VCC 0.0V
CIN
COUT (Note 6)
Input Capacitance
Output Capacitance
12.0
15.0
pF
pF
=
VCC 5.0V
=
C is measured at frequency of f 1 MHz, per MIL-STD-883B, Method 3012.
OUT
Note 6:
3
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4
Physical Dimensions inches (millimeters) unless otherwise noted
20-Terminal Ceramic Chip Carrier
NS Package Number E20A
20-Lead Ceramic Dual-In-Line Package
NS Package Number J20A
5
www.national.com
Physical Dimensions inches (millimeters) unless otherwise noted (Continued)
20-Lead Ceramic Flatpack
NS Package Number W20A
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