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元器件品牌
2N4102
[NJSEMI]
SCR, V(DRM) = 600V TO 699.9V; SCR ，V （ DRM ） = 600V TO 699.9V
元器件型号：
2N4102
生产厂家：
NEW JERSEY SEMI-CONDUCTOR PRODUCTS, INC.
描述和应用：
SCR, V(DRM) = 600V TO 699.9V
SCR ，V （ DRM ） = 600V TO 699.9V
PDF文件：
总1页 (文件大小：115K)
下载文档：
下载PDF数据表文档文件
型号参数：2N4102参数
查看货源
2N4103
SILICON CONTROLLED RECTIFIER 16AMPS 220 THRU 800 VOLTS JEDEC TO-3 CASE
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32
CENTRAL
2N4103
12.5A SILICON CONTROLLED RECTIFIERS
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57
VISHAY
2N4103LEADFREE
Silicon Controlled Rectifier, 16A I(T)RMS, 800V V(DRM), 600V V(RRM), 1 Element, TO-3, HERMETIC SEALED, TO-3, 2 PIN
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156
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0
CENTRAL
2N4104
Bipolar NPN Device
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156
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15
SEME-LAB
2N4104
Bipolar NPN Device
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156
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5
SEME-LAB
2N4104
Bipolar NPN Device
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156
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12
SEME-LAB
2N4108
SCR, V(DRM) = 50V TO 99.9V
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12
NJSEMI
2N411
TRANSISTOR | BJT | PNP | 15MA I(C) | TO-40
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ETC
2N411
TRANSISTOR,BJT,PNP,15MA I(C),TO-40
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0
DIGITRON
2N4111
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-3
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39
ETC
2N4111
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
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156
-
29
SEME-LAB
2N4111E3
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2
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156
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0
MICROSEMI
2N4112
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
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156
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33
SEME-LAB
2N4112
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2
Warning
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156
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0
MICROSEMI
2N4113
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
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30
SEME-LAB
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