2N1805 [NJSEMI]

20 STERN ave.; 20斯特恩AVE 。

2N1805


型号：	2N1805
厂家：	NEW JERSEY SEMI-CONDUCTOR PRODUCTS, INC.
描述：	20 STERN ave. 20斯特恩AVE 。栅极触发装置可控硅整流器
文件：	总1页 (文件大小：53K)
下载：	下载PDF数据表文档文件

2N1806

20 STERN ave.

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5 NJSEMI

2N1806

Phase Control SCR 70 Amoeres Average(110 RMS) 600 Volts

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18 POWEREX

2N1806

Silicon Controlled Rectifiers

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39 MICROSEMI

2N1806

Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element

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0 POWEREX

2N1806

Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-209AC, TO-94, 3 PIN

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0 MICROSEMI

2N1806M

Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-209AC

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0 IRF

2N1806M

Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-209AC

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0 IRF

2N1807

Silicon Controlled Rectifiers

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6 MICROSEMI

2N1807

Silicon Controlled Rectifier

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23 ETC

2N1807

20 STERN ave.

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9 NJSEMI

2N1807

Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 700V V(DRM), 700V V(RRM), 1 Element, TO-209AC, TO-94, 3 PIN

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0 MICROSEMI

2N1807E3

Silicon Controlled Rectifier, 110A I(T)RMS, 700V V(RRM), 1 Element, TO-209AC, TO-94, 3 PIN

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0 MICROSEMI

2N1807M

Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 700V V(DRM), 700V V(RRM), 1 Element, TO-209AC

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0 IRF

2N1807M

Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 700V V(DRM), 700V V(RRM), 1 Element, TO-209AC

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0 IRF

2N1808

alloy-junction germanium transistors

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11 ETC

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