概述
数据手册FCQ10A03L 概述
SBD DUAL DIODES - CATHODE COMMON SBD双二极管 - 阴极公共
FCQ10A03L 数据手册
通过下载FCQ10A03L数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载SBD T y p e : FCQ10A03L
FEATURES
OUTLINE DRAWING
*Similar to TO-220AB Case
*Fully Molded Isolation
*Dual Diodes – Cathode Common
*Extremely Low Forward Voltage Drop
*Low Power Loss,High Efficiency
*High Surge Capability
*Tj=150 °C operation
*Wire-Bonded technology
Maximum Ratings
Approx Net Weight: 1.75g
FCQ10A03L
Rating
Symbol
Unit
Repetitive Peak Reverse Voltage
Repetitive Peak Surge Reverse Voltage
VRRM
VRRSM
30
V
V
35(pulse width ≤ 1µs duty ≤ 1/50)
50 Hz Full Sine Wave
Resistive Load
Average Rectified Output Current
RMS Forward Current
IO
10
Tc=116°C
A
A
A
IF(RMS)
IFSM
11.1
50Hz Full Sine Wave ,1cycle
Non-repetitive
Surge Forward Current
120
Operating JunctionTemperature Range
Storage Temperature Range
Mounting torque
Tjw
Tstg
Ftor
-40 to +150
-40 to +150
recommended torque = 0.5
°C
°C
N•m
Electrical • Thermal Characteristics
Characteristics
Peak Reverse Current
Symbol
Conditions
Min. Typ. Max. Unit
Tj= 25°C, VRM= VRRM
per arm
Tj= 25°C, IFM= 5 A
per arm
IRM
-
-
-
-
5
mA
Peak Forward Voltage
Thermal Resistance
VFM
0.47
3
V
Rth(j-c) Junction to Case
Rth(c-f) Cace to Fin
-
-
-
-
°C /W
1.5 °C /W
FCQ10A03L OUTLINE DRAWING (Dimentions in mm)
FORWARD CURRENT VS. VOLTAGE
FCQ10A03L (per Arm)
20
10
5
2
1
Tj=25°C
Tj=150°C
0.5
0
0.2
0.4
0.6
0.8
INSTANTANEOUS FORWARD VOLTAGE (V)
0°
180°
q
AVERAGE FORWARD POWER DISSIPATION
CONDUCTION ANGLE
FCQ10A03L (Total)
6
5
4
3
2
1
0
RECT 180°
SINE WAVE
0
2
4
6
8
10
12
AVERAGE FORWARD CURRENT (A)
PEAK REVERSE CURRENT VS. PEAK REVERSE VOLTAGE
Tj= 150 °C
FCQ10A03L (per Arm)
500
200
100
50
0
5
10
15
20
25
30
35
PEAK REVERSE VOLTAGE (V)
AVERAGE REVERSE POWER DISSIPATION
FCQ10A03L (Total)
RECT 180°
12
10
8
SINE WAVE
6
4
2
0
0
5
10
15
20
25
30
35
REVERSE VOLTAGE (V)
0°
180°
q
AVERAGE FORWARD CURRENT VS. CASE TEMPERATURE
CONDUCTION ANGLE
VRM=30 V
FCQ10A03L (Total)
12
10
8
RECT 180°.
SINE WAVE.
6
4
2
0
0
25
50
75
100
125
150
CASE TEMPERATURE (°C)
SURGE CURRENT RATINGS
f=50Hz,Sine Wave,Non-Repetitive,No Load
FCQ10A03L
140
120
100
80
60
40
I
FSM
20
0.02s
0
0.02
0.05
0.1
0.2
0.5
1
2
TIME (s)
JUNCTION CAPACITANCE VS. REVERSE VOLTAGE
Tj=2 5° C,Vm =20m VRMS,f=100 kHz,Typica l Value
FCQ10A03L (per Arm)
2000
1000
500
200
100
0.5
1
2
5
10
20
50
REVERSE VOLTAGE (V)
FCQ10A03L 相关器件
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| FCQ10A04 | NIEC | Schottky Barrier Diode | 获取价格 |
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| FCQ20A03L | NIEC | SBD DUAL DIODES - CATHODE COMMON | 获取价格 |
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| FCQ20A03L | KYOCERA AVX | Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers between s | 获取价格 |
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| FCQ20A04 | NIEC | Schottky Barrier Diode | 获取价格 |
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| FCQ20A06 | ETC | SBD | 获取价格 |
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| FCQ20B04 | NIEC | Schottky Barrier Diode | 获取价格 |
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| FCQ20B06 | NIEC | SBD DUAL DIODES - CATHODE COMMON | 获取价格 |
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| FCQ20C03 | NIEC | Schottky Barrier Diode | 获取价格 |
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