PXN6R2-25QL [NEXPERIA]
25 V, N-channel Trench MOSFETProduction;型号: | PXN6R2-25QL |
厂家: | Nexperia |
描述: | 25 V, N-channel Trench MOSFETProduction |
文件: | 总15页 (文件大小:301K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PXN6R2-25QL
25 V, N-channel Trench MOSFET
2 November 2020
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-
Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
•
Logic-level compatible
•
•
•
•
•
Trench MOSFET technology
Ultra low QG and QGD for high system efficiency, especially at higher switching frequencies
Superfast switching with soft-recovery
Low spiking and ringing for low EMI designs
MLPAK33 package (3.3 x 3.3 mm footprint)
3. Applications
•
•
•
•
DC to DC conversion
Battery management
Low-side load switch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
VDS
Parameter
Conditions
Min
Typ
Max
25
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
VGS
-20
-
20
V
ID
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
[1]
22.3
A
Static characteristics
RDSon drain-source on-state
resistance
VGS = 10 V; ID = 13.1 A; Tj = 25 °C
VGS = 4.5 V; ID = 11.2 A; Tj = 25 °C
-
-
5.3
6.8
6.2
8.5
mΩ
mΩ
Dynamic characteristics
QG(tot) total gate charge
VDS = 12.5 V; ID = 11.2 A; VGS = 4.5 V;
Tj = 25 °C
-
8.1
12.2
nC
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.
Nexperia
PXN6R2-25QL
25 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
Description
source
source
source
gate
Simplified outline
Graphic symbol
1
2
3
4
S
S
S
G
D
D
D
D
D
2
G
3
4
mbb076
S
5
drain
6
drain
8
7
6
5
7
drain
MLPAK33 (SOT8002-1)
8
drain
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PXN6R2-25QL
MLPAK33
plastic thermal enhanced surface mounted package; mini leads; SOT8002-1
8 terminals; pitch 0.65 mm; 3.3 x 3.3 x 0.8 mm body
7. Marking
Table 4. Marking codes
Type number
Marking code
9AG
PXN6R2-25QL
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PXN6R2-25QL
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Product data sheet
2 November 2020
2 / 15
Nexperia
PXN6R2-25QL
25 V, N-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
25
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
VGS
-20
20
V
ID
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; Tamb = 100 °C
VGS = 10 V; Tsp = 25 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C; t ≤ 5 s
[1]
[1]
[1]
-
22.3
13.1
8.3
A
-
A
-
A
-
65
A
IDM
Ptot
peak drain current
-
90
A
total power dissipation
[1]
[1]
-
4.8
W
W
W
°C
°C
°C
Tamb = 25 °C
-
1.7
Tsp = 25 °C
-
40.3
150
150
150
Tj
junction temperature
ambient temperature
storage temperature
-55
-55
-65
Tamb
Tstg
Source-drain diode
IS
source current
Tamb = 25 °C
[1]
-
-
1.5
30
A
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-
Tj(init) = 25 °C; ID = 2.4 A; DUT in
mJ
source avalanche energy avalanche (unclamped)
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.
aaa-030137
aaa-030138
120
120
P
der
(%)
I
der
(%)
80
80
40
40
0
-75
0
-75
-25
25
75
125
175
(°C)
-25
25
75
125
175
(°C)
T
T
amb
amb
Fig. 1. Normalized total power dissipation as a
function of ambient temperature
Fig. 2. Normalized continous drain current as a
function of ambient temperature
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PXN6R2-25QL
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Nexperia B.V. 2020. All rights reserved
Product data sheet
2 November 2020
3 / 15
Nexperia
PXN6R2-25QL
25 V, N-channel Trench MOSFET
aaa-031650
3
10
I
D
Limit R
DSon
= V /I
DS
D
(A)
2
10
t
t
= 10 µs
p
p
= 100 µs
10
1
t
= 1 ms
p
-1
10
t
t
= 10 ms
p
p
2
DC; T
= 25 °C; drain mounting pad 6 cm
amb
-2
-3
-4
10
10
10
= 100 ms
DC; T = 25 °C
sp
-1
2
10
1
10
10
V
(V)
DS
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
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PXN6R2-25QL
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Nexperia B.V. 2020. All rights reserved
Product data sheet
2 November 2020
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Nexperia
PXN6R2-25QL
25 V, N-channel Trench MOSFET
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
150
60
Max
190
75
Unit
K/W
K/W
K/W
K/W
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1]
[2]
[2]
-
-
-
-
in free air; t ≤ 5 s
21
26
Rth(j-sp)
thermal resistance from
junction to solder point
2.1
3.1
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2.
aaa-031651
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.50
2
10
0.33
0.25
0.20
0.10
0.05
10
0.02
0.01
0
1
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-031652
2
10
duty cycle = 1
0.75
Z
th(j-a)
(K/W)
0.50
0.33
0.20
0.25
10
0.10
0.05
0.01
0.02
0
1
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 6 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
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PXN6R2-25QL
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Nexperia B.V. 2020. All rights reserved
Product data sheet
2 November 2020
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Nexperia
PXN6R2-25QL
25 V, N-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Static characteristics
V(BR)DSS drain-source
breakdown voltage
Parameter
Conditions
Min
Typ
Max
Unit
ID = 250 µA; VGS = 0 V; Tj = 25 °C
25
-
-
V
V
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
1.2
1.7
2.2
IDSS
IGSS
drain leakage current
gate leakage current
VDS = 25 V; VGS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 13.1 A; Tj = 25 °C
VGS = 10 V; ID = 13.1 A; Tj = 150 °C
VGS = 4.5 V; ID = 11.2 A; Tj = 25 °C
VDS = 10 V; ID = 13.1 A; Tj = 25 °C
-
-
-
-
-
-
-
-
1
µA
nA
nA
mΩ
mΩ
mΩ
S
-
100
-100
6.2
9.7
8.5
-
-
RDSon
drain-source on-state
resistance
5.3
8.2
6.8
32
gfs
forward
transconductance
RG
gate resistance
f = 1 MHz
-
-
11.5
17
-
Ω
Dynamic characteristics
QG(tot)
total gate charge
VDS = 12.5 V; ID = 13.1 A; VGS = 10 V;
Tj = 25 °C
25.5
nC
VDS = 12.5 V; ID = 11.2 A; VGS = 4.5 V;
Tj = 25 °C
-
-
-
8.1
3.2
2
12.2
nC
nC
nC
QGS
gate-source charge
-
-
QGS(th)
pre-threshold gate-
source charge
QGS(th-pl)
post-threshold gate-
source charge
-
1.2
-
nC
QGD
gate-drain charge
-
-
2.2
2.8
-
-
nC
V
VGSpl
gate-source plateau
voltage
VDS = 12.5 V; ID = 11.2 A; Tj = 25 °C
Ciss
Coss
Crss
input capacitance
output capacitance
VDS = 12.5 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
-
-
-
1200
430
76
-
-
-
pF
pF
pF
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 12.5 V; ID = 11.2 A; VGS = 4.5 V;
RG(ext) = 5 Ω; Tj = 25 °C
-
-
-
-
5
8
6
3
-
-
-
-
ns
ns
ns
ns
turn-off delay time
fall time
Source-drain diode
VSD
trr
source-drain voltage
IS = 1.5 A; VGS = 0 V; Tj = 25 °C
-
-
-
-
0.7
15
6
1.2
V
reverse recovery time IS = 1.5 A; dIS/dt = -100 A/µs;
-
-
-
ns
nC
ns
VGS = 4.5 V; VDS = 12.5 V; Tj = 25 °C
Qr
ta
recovered charge
reverse recovery rise
time
8
tb
reverse recovery fall
time
-
7
-
ns
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PXN6R2-25QL
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Nexperia B.V. 2020. All rights reserved
Product data sheet
2 November 2020
6 / 15
Nexperia
PXN6R2-25QL
25 V, N-channel Trench MOSFET
aaa-031653
aaa-031654
-3
-4
-5
-6
50
10
D
10 V
I
D
(A)
I
4.5 V
(A)
40
3.2 V
min
typ
max
10
30
20
10
0
3.0 V
10
10
V
= 2.8 V
GS
4
0
1
2
3
5
0
1
2
3
V
(V)
V
(V)
GS
DS
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig. 7. Subthreshold drain current as a function of
gate-source voltage
aaa-031655
aaa-031656
50
50
2.8 V
R
DSon
R
DSon
40
40
3.0 V
30
20
10
0
30
20
10
0
3.2 V
T = 150 °C
j
4.5 V
T = 25 °C
V
= 10 V
j
GS
20
0
5
10
15
25
0
2
4
6
8
10
(V)
I
(A)
V
GS
D
Tj = 25 °C
ID = 13.1 A
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values
of gate-source voltage; typical values
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PXN6R2-25QL
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Nexperia B.V. 2020. All rights reserved
Product data sheet
2 November 2020
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Nexperia
PXN6R2-25QL
25 V, N-channel Trench MOSFET
aaa-031657
aaa-031658
30
2.0
1.5
1.0
0.5
0
a
I
D
(A)
20
T = 150 °C
j
10
T = 25 °C
j
0
0
1
2
3
4
-60
0
60
120
180
V
(V)
T (°C)
j
GS
VDS = 10 V
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
aaa-031659
aaa-031660
4
3
10
C
(pF)
V
GS(th)
(V)
max
typ
C
C
iss
3
2
2
1
0
10
oss
10
min
C
rss
10
-1
10
2
-60
0
60
120
180
1
10
10
T (°C)
j
V
(V)
DS
ID = 250 μA; VDS = VGS
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances
junction temperature
as a function of drain-source voltage; typical
values
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PXN6R2-25QL
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Nexperia B.V. 2020. All rights reserved
Product data sheet
2 November 2020
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Nexperia
PXN6R2-25QL
25 V, N-channel Trench MOSFET
aaa-031661
10
V
(V)
V
GS
DS
8
I
D
6
4
2
V
V
GS(pl)
GS(th)
V
GS
Q
GS2
Q
GS1
0
0
Q
Q
GS
GD
4
8
12
16
Q
20
(nC)
G
Q
G(tot)
003aaa508
ID = 11.3 A; VDS =12.5 V; Tj = 25 °C
Fig. 15. Gate charge waveform definitions
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
003aal160
aaa-031662
1.5
I
D
(A)
I
S
(A)
t
rr
1.0
t
t
b
a
0
T = 150 °C
j
0.5
0.25 I
RM
I
RM
T = 25 °C
j
0
t (s)
0
0.4
0.8
1.2
V
(V)
SD
Fig. 16. Reverse recovery timing definition
VGS = 0 V
Fig. 17. Source current as a function of source-drain
voltage; typical values
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PXN6R2-25QL
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Product data sheet
2 November 2020
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Nexperia
PXN6R2-25QL
25 V, N-channel Trench MOSFET
11. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 18. Duty cycle definition
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PXN6R2-25QL
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Product data sheet
2 November 2020
10 / 15
Nexperia
PXN6R2-25QL
25 V, N-channel Trench MOSFET
12. Package outline
MLPAK33: plastic thermal enhanced surface mounted package; mini leads; 8 terminals;
pitch 0.65 mm; 3.3 x 3.3 x 0.8 mm body
SOT8002-1
X
b
(8x)
v
B
C A
C
e
(6x)
w
y
C
1
4
K
L
1
(4x)
E
2
L
2
8
5
D
2
A
B
A
8
5
θ
E
E
1
E
3
C
c
Seating Plane
1
4
y
C
1
D
1
detail X
5 mm
D
0
scale
Dimensions (mm are the original dimensions)
Unit
A
b
c
D
D
1
D
2
e
E
E
E
E
K
L
1
L
2
θ
y
y
1
v
w
1
2
3
max 0.90 0.35 0.18 3.50 3.25 2.65
3.30
min 0.70 0.25 0.12 3.10 3.05 2.45
3.50 3.10 1.99 0.25
0.40 0.58 12°
0.25 0.43 10°
0.10 0.28 8°
0.65
(ref)
0.65 3.30
0.80 0.30 0.15
3.15 2.55
3.00 1.89 0.20
nom
mm
0.05 0.05 0.1 0.05
3.10 2.90 1.79 0.15
sot8002-1_po
References
Outline
version
European
projection
Issue date
19-12-19
IEC
JEDEC
EIAJ
SOT8002-1
20-01-09
Fig. 19. Package outline MLPAK33 (SOT8002-1)
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Product data sheet
2 November 2020
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Nexperia
PXN6R2-25QL
25 V, N-channel Trench MOSFET
13. Soldering
Footprint information for reflow soldering of MLPAK33 package
SOT8002-1
3.55
2.60
2.45
2.35
0.50
2.68 2.58
0.20
3.25 3.80 4.05
0.70
0.95
0.52 0.62
0.20
0.70 0.60 0.50
0.30
0.40
0.50
0.65
2.65
0.15
0.25
recommended stencil thickness: 0.1 mm
occupied area
solder resist
solder paste
solder lands
Dimensions in mm
19-12-20
Issue date
sot8002-1_fr
Fig. 20. Reflow soldering footprint for MLPAK33 (SOT8002-1)
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Product data sheet
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Nexperia
PXN6R2-25QL
25 V, N-channel Trench MOSFET
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
20201102
Data sheet status
Change notice
Supersedes
PXN6R2-25QL v.1
Product data sheet
-
-
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PXN6R2-25QL
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Product data sheet
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Nexperia
PXN6R2-25QL
25 V, N-channel Trench MOSFET
injury, death or severe property or environmental damage. Nexperia and its
suppliers accept no liability for inclusion and/or use of Nexperia products in
such equipment or applications and therefore such inclusion and/or use is at
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15. Legal information
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Data sheet status
Document status Product
Definition
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
[1][2]
status [3]
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
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and products using Nexperia products, and Nexperia accepts no liability for
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Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
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or problem which is based on any weakness or default in the customer’s
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Definitions
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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modifications or additions. Nexperia does not give any representations or
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Non-automotive qualified products — Unless this data sheet expressly
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In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without Nexperia’s warranty of the
product for such automotive applications, use and specifications, and (b)
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Nexperia’s specifications such use shall be solely at customer’s own risk,
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product claims resulting from customer design and use of the product for
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product specifications.
Notwithstanding any damages that customer might incur for any reason
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Terms and conditions of commercial sale of Nexperia.
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Trademarks
Suitability for use — Nexperia products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
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Notice: All referenced brands, product names, service names and
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©
PXN6R2-25QL
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
2 November 2020
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Nexperia
PXN6R2-25QL
25 V, N-channel Trench MOSFET
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 5
10. Characteristics............................................................6
11. Test information........................................................10
12. Package outline........................................................ 11
13. Soldering................................................................... 12
14. Revision history........................................................13
15. Legal information......................................................14
© Nexperia B.V. 2020. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 2 November 2020
©
PXN6R2-25QL
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
2 November 2020
15 / 15
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