PSMN7R0-30MLC_技术文档

PSMN7R0-30MLC

N-channel 30 V 7 mΩ logic level MOSFET in LFPAK33 using

NextPower Technology

Rev. 4 — 15 June 2012

Product data sheet

1. Product profile

1.1 General description

Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

 Low parasitic inductance and

 Ultra low QG, QGD, & QOSS for high

system efficiencies at low and high

loads

resistance

 Optimised for 4.5V Gate drive utilising

NextPower Superjunction technology

1.3 Applications

 DC-to-DC converters

 Load switching

 Synchronous buck regulator

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min

Typ

Max

30

Unit

V

drain-source voltage

drain current

T_j= 25 °C

-

I_D

T_mb= 25 °C; V_GS= 10 V; see Figure 1

-

67

A

P_tot

total power dissipation T_mb= 25 °C; see Figure 2

junction temperature

-

57

W

T_j

-55

175

°C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 4.5 V; I_D= 15 A; T_j= 25 °C;

see Figure 10

-

7.8

9

7

mΩ

V_GS= 10 V; I_D= 15 A; T_j= 25 °C;

see Figure 10

6.05

Dynamic characteristics

Q_GD

gate-drain charge

V_GS= 4.5 V; I_D= 15 A; V_DS= 15 V;

see Figure 12; see Figure 13

-

2

-

nC

Q_G(tot)

total gate charge

V_GS= 4.5 V; I_D= 15 A; V_DS= 15 V;

see Figure 12; see Figure 13

8.2

PSMN7R0-30MLC

Nexperia

N-channel 30 V 7 mΩ logic level MOSFET in LFPAK33 using NextPower Technology

2. Pinning information

Table 2.

Pinning information

Symbol Description

1

Simplified outline

Graphic symbol

S

G

D

source

gate

D

S

2

3

G

4

mbb076

mb

mounting base; connected to

drain

1

2

3

4

SOT1210 (LFPAK33)

3. Ordering information

Table 3.

Ordering information

Type number

Package

Name

Description

Version

PSMN7R0-30MLC

LFPAK33

Plastic single ended surface mounted package (LFPAK33);

4 leads

SOT1210

4. Limiting values

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_DS

Parameter

Conditions

Min

Max

30

Unit

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

-

V

A

V_GS

-20

20

I_D

V_GS= 10 V; T_mb= 25 °C; see Figure 1

V_GS= 10 V; T_mb= 100 °C; see Figure 1

-

67

48

I_DM

peak drain current

pulsed; t_p≤ 10 µs; T_mb= 25 °C;

270

see Figure 4

P_tot

total power dissipation

storage temperature

T_mb= 25 °C; see Figure 2

-

57

W

°C

V

T_stg

T_j

-55

-

175

260

-

junction temperature

T_sld(M)

V_ESD

Source-drain diode

peak soldering temperature

electrostatic discharge voltage MM (JEDEC JESD22-A115)

190

I_S

source current

peak source current

T_mb= 25 °C

-

52

A

I_SM

pulsed; t_p≤ 10 µs; T_mb= 25 °C

270

Avalanche ruggedness

E_DS(AL)S

non-repetitive drain-source

avalanche energy

V_GS= 10 V; T_j(init)= 25 °C; I_D= 67 A;

-

18.7

mJ

V_sup≤ 30 V; R_GS= 50 Ω; unclamped;

see Figure 3

PSMN7R0-30MLC

All information provided in this document is subject to legal disclaimers.

©

Product data sheet

Rev. 4 — 15 June 2012

2 of 14

PSMN7R0-30MLC

Nexperia

N-channel 30 V 7 mΩ logic level MOSFET in LFPAK33 using NextPower Technology

03na19

003aaj533

120

80

I_D

P

(%)

der

(A)

60

40

20

80

40

0

50

100

150

200

50

100

150

200

T_mb( C)

°

T

(°C)

mb

Fig 1. Continuous drain current as a function of

mounting base temperature

Fig 2. Normalized total power dissipation as a

function of mounting base temperature

003aaj534

10²

I

AL

(A)

(1)

(2)

10

1

10^-3

10^-2

10^-1

1

10

(ms)

t

AL

Fig 3. Single pulse avalanche rating; avalanche current as a function of avalanche time

PSMN7R0-30MLC

All information provided in this document is subject to legal disclaimers.

©

Product data sheet

Rev. 4 — 15 June 2012

3 of 14

PSMN7R0-30MLC

Nexperia

N-channel 30 V 7 mΩ logic level MOSFET in LFPAK33 using NextPower Technology

003aaj535

10³

I

D

(A)

Limit R

= V / I

DS D

DSon

10²

t =10

p

s

μ

100

s

μ

10

1

DC

1 ms

10 ms

100 ms

10^-1

1

10

10²

V

(V)

DS

Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

5. Thermal characteristics

Table 5.

Symbol

R_th(j-mb)

Thermal characteristics

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance from

junction to mounting base

see Figure 5

-

2.39

2.62

K/W

003aaj536

10

Z

th(j-mb)

(K/W)

= 0.5

δ

1

0.2

0.1

0.05

tp

P

10^-1

δ =

0.02

T

single shot

t

tp

T

10^-2

10^-6

10^-5

10^-4

10^-3

10^-2

10^-1

1

t (s)

p

Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration

PSMN7R0-30MLC

All information provided in this document is subject to legal disclaimers.

©

Product data sheet

Rev. 4 — 15 June 2012

4 of 14

PSMN7R0-30MLC

Nexperia

N-channel 30 V 7 mΩ logic level MOSFET in LFPAK33 using NextPower Technology

6. Characteristics

Table 6.

Symbol

Characteristics

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V_(BR)DSS

drain-source

breakdown voltage

I_D= 250 µA; V_GS= 0 V; T_j= 25 °C

I_D= 250 µA; V_GS= 0 V; T_j= -55 °C

30

-

V

27

-

V_GS(th)

gate-source threshold I_D= 1 mA; V_DS= V_GS; T_j= 25 °C

voltage

1.45

1.75

2.15

∆V_GS(th)/∆T

gate-source threshold

voltage variation with

temperature

-

-3.9

-

mV/K

I_DSS

drain leakage current

V_DS= 30 V; V_GS= 0 V; T_j= 25 °C

V_DS= 30 V; V_GS= 0 V; T_j= 150 °C

V_GS= 16 V; V_DS= 0 V; T_j= 25 °C

V_GS= -16 V; V_DS= 0 V; T_j= 25 °C

-

1

µA

nA

mΩ

-

100

9

I_GSS

gate leakage current

-

R_DSon

drain-source on-state

resistance

V_GS= 4.5 V; I_D= 15 A; T_j= 25 °C;

see Figure 10

7.8

V_GS= 4.5 V; I_D= 15 A; T_j= 150 °C;

see Figure 10; see Figure 11

-

15.3

7

mΩ

Ω

V_GS= 10 V; I_D= 15 A; T_j= 25 °C;

-

6.05

see Figure 10

V_GS= 10 V; I_D= 15 A; T_j= 150 °C;

see Figure 10; see Figure 11

-

11.9

4

R_G

gate resistance

f = 1 MHz

1

2

Dynamic characteristics

Q_G(tot)

total gate charge

I_D= 15 A; V_DS= 15 V; V_GS= 10 V;

see Figure 12; see Figure 13

-

17.9

8.2

-

nC

I_D= 15 A; V_DS= 15 V; V_GS= 4.5 V;

see Figure 12; see Figure 13

I_D= 0 A; V_DS= 0 V; V_GS= 10 V

-

16.2

2.9

-

nC

Q_GS

gate-source charge

I_D= 15 A; V_DS= 15 V; V_GS= 4.5 V;

see Figure 12; see Figure 13

Q_GS(th)

pre-threshold

1.9

gate-source charge

Q_GS(th-pl)

post-threshold

-

1

-

nC

gate-source charge

Q_GD

gate-drain charge

-

2

-

nC

V

V_GS(pl)

gate-source plateau

voltage

I_D= 15 A; V_DS= 15 V;

see Figure 12; see Figure 13

2.72

C_iss

C_oss

C_rss

input capacitance

output capacitance

V_DS= 15 V; V_GS= 0 V; f = 1 MHz;

T_j= 25 °C; see Figure 14

-

1076

248

88

-

pF

reverse transfer

capacitance

PSMN7R0-30MLC

All information provided in this document is subject to legal disclaimers.

©

Product data sheet

Rev. 4 — 15 June 2012

5 of 14

PSMN7R0-30MLC

Nexperia

N-channel 30 V 7 mΩ logic level MOSFET in LFPAK33 using NextPower Technology

Table 6.

Symbol

t_d(on)

t_r

Characteristics …continued

Parameter

Conditions

Min

Typ

9.7

Max

Unit

ns

turn-on delay time

rise time

V_DS= 15 V; R_L= 1 Ω; V_GS= 4.5 V;

R_G(ext)= 5 Ω

-

15.4

13.4

8.5

ns

t_d(off)

t_f

turn-off delay time

fall time

ns

Q_oss

output charge

V_GS= 0 V; V_DS= 15 V; f = 1 MHz;

T_j= 25 °C

24.7

nC

Source-drain diode

V_SD

source-drain voltage

I_S= 15 A; V_GS= 0 V; T_j= 25 °C;

see Figure 15

-

0.85

1.1

V

t_rr

Q_r

t_a

reverse recovery time I_S= 15 A; dI_S/dt = -100 A/µs; V_GS= 0 V;

-

18.3

11.9

11.4

-

ns

nC

ns

V

_DS= 15 V

recovered charge

reverse recovery rise

time

V_GS= 0 V; I_S= 15 A; dI_S/dt = -100 A/µs;

V_DS= 15 V; see Figure 16

t_b

reverse recovery fall

time

-

6.9

-

ns

003aaj537

003aaj538

75

20

I

10

4.5

D

R

DSon

(A)

3.5

(m

)

Ω

60

15

10

5

45

30

15

0

3

2.8

V

(V) = 2.6

GS

0

1

2

3

4

(V)

0

4

8

12

16

V

(V)

DS

GS

Fig 6. Output characteristics; drain current as a

function of drain-source voltage; typical values

Fig 7. Drain-source on-state resistance as a function

of gate-source voltage; typical values

PSMN7R0-30MLC

All information provided in this document is subject to legal disclaimers.

©

Product data sheet

Rev. 4 — 15 June 2012

6 of 14

PSMN7R0-30MLC

Nexperia

N-channel 30 V 7 mΩ logic level MOSFET in LFPAK33 using NextPower Technology

003aaj539

003aaj540

100

80

g

I

fs

D

(A)

(S)

75

60

50

25

40

20

0

T = 150

j

C

°

T = 25

C

°

j

0

20

40

60

80

0

1

2

3

4

I

(A)

V

(V)

D

GS

Fig 8. Forward transconductance as a function of

drain current; typical values

Fig 9. Transfer characteristics; drain current as a

function of gate-source voltage; typical values

003aag131

003aaj543

25

2

3

a

3.5

R

(mΩ)

DSon

4.5V

20

15

10

5

1.5

V_GS=10V

1

4.5

V_GS(V) = 10

0.5

0

10

30

50

70

-60

0

60

120

180

I

(A)

D

T_j(C)

Fig 10. Drain-source on-state resistance as a function

of drain current; typical values

Fig 11. Normalized drain-source on-state resistance

factor as a function of junction temperature

PSMN7R0-30MLC

All information provided in this document is subject to legal disclaimers.

©

Product data sheet

Rev. 4 — 15 June 2012

7 of 14

PSMN7R0-30MLC

Nexperia

N-channel 30 V 7 mΩ logic level MOSFET in LFPAK33 using NextPower Technology

003aaj545

10

V

GS

(V)

V

DS

15 V

7.5

I

D

6 V

V

GS(pl)

5

2.5

0

V

= 24 V

DS

V

GS(th)

GS

V

Q

GS1

GS2

Q

GD

GS

Q

G(tot)

003aaa508

0

5

10

15

20

(nC)

Q

G

Fig 12. Gate charge waveform definitions

Fig 13. Gate-source voltage as a function of gate

charge; typical values

003aaj546

003aaj547

10⁴

80

I

S

C

(pF)

(A)

60

10³

10²

10

C

iss

40

C

oss

T = 150 C

°

j

rss

20

0

T = 25

C

°

j

10^-1

1

10

10²

0

0.3

0.6

0.9

1.2

V

(V)

V

(V)

SD

DS

Fig 14. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

Fig 15. Source current as a function of source-drain

voltage; typical values

PSMN7R0-30MLC

All information provided in this document is subject to legal disclaimers.

©

Product data sheet

Rev. 4 — 15 June 2012

8 of 14

PSMN7R0-30MLC

Nexperia

N-channel 30 V 7 mΩ logic level MOSFET in LFPAK33 using NextPower Technology

003aaf 444

I_D

(A)

t_rr

t_a

t_b

0

0.25 I

RM

I_RM

t (s)

Fig 16. Reverse recovery timing definition

PSMN7R0-30MLC

All information provided in this document is subject to legal disclaimers.

©

Product data sheet

Rev. 4 — 15 June 2012

9 of 14

PSMN7R0-30MLC

Nexperia

N-channel 30 V 7 mΩ logic level MOSFET in LFPAK33 using NextPower Technology

7. Package outline

Plastic single ended surface mounted package (LFPAK33); 8 leads

SOT1210

A

E

A

e

1

c

1

b

1

E

L

1

mounting

base

D

1

D

H

1

4

e

X

b

w

A

c

A

1

C

θ

Lp

y

C

detail X

0

1

2.5

5 mm

L

scale

Dimensions

(1)

Unit

A

1

b

1

c

D

E

e

1

H

L

p

w

y

θ

1

°

max 0.90 0.10 0.35 0.35 0.20 0.30 2.70 2.35 3.40 2.45

mm nom

3.40 0.25 0.50

3.20 0.13 0.30

8

0

0.65 0.65

0.20 0.10

°

0.80 0.00 0.25 0.25 0.10 0.20 2.50 1.90 3.20 2.00

min

Note

1. Plastic or metal protrusions of 0.15 mm per side are not included.

sot1210_po

References

Outline

version

European

projection

Issue date

IEC

JEDEC

JEITA

11-12-19

12-03-12

SOT1210

Fig 17. Package outline SOT1210 (LFPAK33)

PSMN7R0-30MLC

All information provided in this document is subject to legal disclaimers.

©

Product data sheet

Rev. 4 — 15 June 2012

10 of 14

PSMN7R0-30MLC

Nexperia

N-channel 30 V 7 mΩ logic level MOSFET in LFPAK33 using NextPower Technology

8. Revision history

Table 7.

Document ID

PSMN7R0-30MLC v.4 20120615

Revision history

Release date

Data sheet status

Change notice

Supersedes

Product data sheet

-

PSMN7R0-30MLC v.3

Modifications:

• Status changed from objective to product.

• Various changes to content.

PSMN7R0-30MLC v.3 20120607

Objective data sheet

-

PSMN7R0-30MLC v.2

PSMN7R0-30MLC

All information provided in this document is subject to legal disclaimers.

©

Product data sheet

Rev. 4 — 15 June 2012

11 of 14

PSMN7R0-30MLC

Nexperia

N-channel 30 V 7 mΩ logic level MOSFET in LFPAK33 using NextPower Technology

9. Legal information

9.1 Data sheet status

Document status^{[1] [2]}

Product status^[3]

Development

Definition

Objective [short] data sheet

This document contains data from the objective specification for product development.

This document contains data from the preliminary specification.

This document contains the product specification.

Preliminary [short] data sheet Qualification

Product [short] data sheet Production

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term 'short data sheet' is explained in section "Definitions".

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nexperia.com.

Right to make changes — Nexperia reserves the right to make

9.2 Definitions

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modifications or additions.

Nexperia does not give any representations or warranties as to

the accuracy or completeness of information included herein and shall have

no liability for the consequences of use of such information.

Suitability for use — Nexperia products are not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of a Nexperia product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. Nexperia and its suppliers accept no liability for

inclusion and/or use of Nexperia products in such equipment or

applications and therefore such inclusion and/or use is at the customer’s own

risk.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. Nexperia does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local Nexperia sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall prevail.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

Nexperia and its customer, unless Nexperia and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the Nexperia product is

deemed to offer functions and qualities beyond those described in the

Product data sheet.

Customers are responsible for the design and operation of their applications

and products using Nexperia products, and Nexperia

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the Nexperia

product is suitable and fit for the customer’s applications and

products planned, as well as for the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

9.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, Nexperia does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information. Nexperia takes no

responsibility for the content in this document if provided by an information

source outside of Nexperia.

Nexperia does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessary

testing for the customer’s applications and products using Nexperia

products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). Nexperia does not accept any liability in this respect.

In no event shall Nexperia be liable for any indirect, incidental,

punitive, special or consequential damages (including - without limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Notwithstanding any damages that customer might incur for any reason

whatsoever, Nexperia’s aggregate and cumulative liability towards

customer for the products described herein shall be limited in accordance

with theTerms and conditions of commercial sale of Nexperia.

PSMN7R0-30MLC

All information provided in this document is subject to legal disclaimers.

©

Product data sheet

Rev. 4 — 15 June 2012

12 of 14

PSMN7R0-30MLC

Nexperia

N-channel 30 V 7 mΩ logic level MOSFET in LFPAK33 using NextPower Technology

Terms and conditions of commercial sale — Nexperia

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

Nexperia’s specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies Nexperia for any

liability, damages or failed product claims resulting from customer design and

use of the product for automotive applications beyond Nexperia’s

standard warranty and Nexperia’s product specifications.

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nexperia.com/profile/terms, unless otherwise

agreed in a valid written individual agreement. In case an individual

agreement is concluded only the terms and conditions of the respective

agreement shall apply. Nexperia hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of Nexperia products by customer.

Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

No offer to sell or license — Nothing in this document may be interpreted or

construed as an offer to sell products that is open for acceptance or the grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

9.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

Export control — This document as well as the item(s) described herein may

be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific Nexperia product is automotive qualified,

the product is not suitable for automotive use. It is neither qualified nor tested

in accordance with automotive testing or application requirements. Nexperia

accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and standards, customer

(a) shall use the product without Nexperia’s warranty of the

10. Contact information

For more information, please visit:http://www.nexperia.com

For sales office addresses, please send an email to:salesaddresses@nexperia.com

PSMN7R0-30MLC

All information provided in this document is subject to legal disclaimers.

©

Product data sheet

Rev. 4 — 15 June 2012

13 of 14

PSMN7R0-30MLC

Nexperia

N-channel 30 V 7 mΩ logic level MOSFET in LFPAK33 using NextPower Technology

11. Contents

1

Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

General description . . . . . . . . . . . . . . . . . . . . . .1

Features and benefits. . . . . . . . . . . . . . . . . . . . .1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

Quick reference data . . . . . . . . . . . . . . . . . . . . .1

1.1

1.2

1.3

1.4

2

3

4

5

6

7

8

Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

Ordering information. . . . . . . . . . . . . . . . . . . . . .2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2

Thermal characteristics . . . . . . . . . . . . . . . . . . .4

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5

Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10

Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11

9

Legal information. . . . . . . . . . . . . . . . . . . . . . . .12

Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12

Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .12

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13

9.1

9.2

9.3

9.4

10

Contact information. . . . . . . . . . . . . . . . . . . . . .13

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 15 June 2012


型号：	PSMN7R0-30MLC
厂家：	Nexperia
描述：	N-channel 30 V 7 mΩ logic level MOSFET in LFPAK33 using NextPower TechnologyProduction
文件：	总14页 (文件大小：1119K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PSMN7R0-30MLC [NEXPERIA]

相关型号：

PSMN7R0-30MLC,115

PSMN7R0-30YL

PSMN7R0-30YL,115

PSMN7R0-30YLC

PSMN7R0-30YLC

PSMN7R0-30YLC,115

PSMN7R0-30YL_10

PSMN7R0-60YS

PSMN7R0-60YS

PSMN7R0-60YS,115

PSMN7R2-100YSF

PSMN7R5-25YLC