PSMN4R8-100PSE [NEXPERIA]
N-channel 100 V 5 mΩ standard level MOSFET with improved SOA in TO220 packageProduction;型号: | PSMN4R8-100PSE |
厂家: | Nexperia |
描述: | N-channel 100 V 5 mΩ standard level MOSFET with improved SOA in TO220 packageProduction |
文件: | 总13页 (文件大小:785K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PSMN4R8-100PSE
N-channel 100 V 5 mΩ standard level MOSFET with improved
SOA in TO220 package
11 July 2014
Product data sheet
1. General description
Standard level N-channel MOSFET with improved SOA in a TO220 package. Part of
Nexperia "NextPower Live" portfolio, the PSMN4R8-100PSE is robust enough to
withstand substantial in-rush and fault condition currents during turn on/off, whilst
offering a low RDS(on) characteristic to keep temperatures down and efficiency up in
continued use. Ideal for telecommunication systems based on 48 V backplanes / supply
rails.
2. Features and benefits
Enhanced safe operating area (SOA) for superior protection during linear mode
operation
Very low RDS(on) for low conduction losses
•
•
3. Applications
Electronic fuse
•
•
•
•
Hot-swap / Soft-start
Uninterruptible power supplies
Motor control
4. Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
100
693
405
Unit
V
VDS
IDM
Ptot
drain-source voltage
peak drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
pulsed; Tmb = 25 °C; tp ≤ 10 µs; Fig. 3
-
-
-
-
-
-
A
total power dissipation Tmb = 25 °C; Fig. 1
W
Static characteristics
RDSon drain-source on-state
resistance
Dynamic characteristics
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 12
-
4.3
5
mΩ
QGD
gate-drain charge
total gate charge
VGS = 10 V; ID = 25 A; VDS = 50 V;
Fig. 14; Fig. 15
-
-
59
83
nC
nC
QG(tot)
196
278
Nexperia
PSMN4R8-100PSE
N-channel 100 V 5 mΩ standard level MOSFET with improved SOA in
TO220 package
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Avalanche ruggedness
EDS(AL)S non-repetitive drain-
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;
Vsup ≤ 100 V; RGS = 50 Ω; unclamped;
Fig. 4
-
-
542
mJ
source avalanche
energy
5. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
mb
D
S
1
G
D
S
D
gate
2
drain
source
G
3
mbb076
mb
mounting base; connected to
drain
1
2 3
TO-220AB (SOT78)
6. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PSMN4R8-100PSE
TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
7. Marking
Table 4.
Marking codes
Type number
Marking code
PSMN4R8-100PSE
PSMN4R8-100PSE
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
100
V
©
PSMN4R8-100PSE
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Nexperia B.V. 2017. All rights reserved
Product data sheet
11 July 2014
2 / 13
Nexperia
PSMN4R8-100PSE
N-channel 100 V 5 mΩ standard level MOSFET with improved SOA in
TO220 package
Symbol
VDGR
VGS
Parameter
Conditions
Min
Max
100
20
Unit
V
drain-gate voltage
gate-source voltage
total power dissipation
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
-
-20
V
Ptot
Tmb = 25 °C; Fig. 1
-
405
120
120
693
175
175
260
W
A
ID
VGS = 10 V; Tj = 25 °C; Fig. 2
VGS = 10 V; Tmb = 100 °C; Fig. 2
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
[1]
[1]
-
-
A
IDM
peak drain current
-
A
Tstg
Tj
storage temperature
junction temperature
peak soldering temperature
-55
-55
-
°C
°C
°C
Tsld(M)
Source-drain diode
IS
source current
peak source current
Tmb = 25 °C
[1]
-
-
120
693
A
A
ISM
pulsed; tp ≤ 10 µs; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;
Vsup ≤ 100 V; RGS = 50 Ω; unclamped;
Fig. 4
-
542
mJ
[1] Continuous current limited by package.
03aa16
003aaj964
120
200
D
I
(A)
P
der
(%)
160
80
(1)
120
80
40
0
40
0
0
50
100
150
200
0
50
100
150
200
T
( C)
°
T
(°C)
mb
mb
(1) Capped at 120A due to package
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
Fig. 2. Continuous drain current as a function of
mounting base temperature
©
PSMN4R8-100PSE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
11 July 2014
3 / 13
Nexperia
PSMN4R8-100PSE
N-channel 100 V 5 mΩ standard level MOSFET with improved SOA in
TO220 package
003aaj966
104
ID
(A)
103
Limit R
= V / I
DS D
DSon
t =10
s
µ
s
102
10
1
p
100
µ
1 ms
DC
10 ms
100 ms
10-1
10-1
1
10
102
103
V
(V)
DS
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
003aaj965
3
10
I
AL
(A)
2
10
(1)
(2)
10
1
10
-3
-2
-1
10
10
1
AL
10
t
(ms)
Fig. 4. Single pulse avalanche rating; avalanche current as a function of avalanche time
9. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
Fig. 5
-
0.3
0.37
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
Minimum footprint; mounted on a
printed circuit board
-
60
-
K/W
©
PSMN4R8-100PSE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
11 July 2014
4 / 13
Nexperia
PSMN4R8-100PSE
N-channel 100 V 5 mΩ standard level MOSFET with improved SOA in
TO220 package
003aaj353
1
Z
th(j-mb)
(K/W)
= 0.5
δ
10-1
0.2
0.1
0.05
tp
P
δ=
10-2
T
0.02
t
tp
single shot
T
10-3
10-6
10-5
10-4
10-3
10-2
10-1
1
t (s)
p
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
100
90
2
-
-
V
V
V
-
-
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
voltage
3
4
Fig. 10; Fig. 11
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 175 °C;
VGSth
1
-
-
-
-
V
V
voltage
Fig. 11
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 11
4.6
IDSS
drain leakage current
gate leakage current
VDS = 100 V; VGS = 0 V; Tj = 25 °C
VDS = 100 V; VGS = 0 V; Tj = 175 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
-
-
-
-
0.16
-
10
µA
µA
nA
nA
mΩ
500
100
100
5
IGSS
10
10
4.3
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 12
VGS = 10 V; ID = 25 A; Tj = 100 °C;
Fig. 13; Fig. 12
-
-
9
mΩ
mΩ
Ω
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 12; Fig. 13
-
-
13.5
1.7
RG
gate resistance
f = 1 MHz
0.43
0.85
©
PSMN4R8-100PSE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
11 July 2014
5 / 13
Nexperia
PSMN4R8-100PSE
N-channel 100 V 5 mΩ standard level MOSFET with improved SOA in
TO220 package
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Dynamic characteristics
QG(tot)
total gate charge
ID = 25 A; VDS = 50 V; VGS = 10 V;
Fig. 14; Fig. 15
-
196
278
nC
ID = 0 A; VDS = 0 V; VGS = 10 V
-
-
-
-
166.9 234
nC
nC
nC
V
QGS
gate-source charge
gate-drain charge
ID = 25 A; VDS = 50 V; VGS = 10 V;
Fig. 14; Fig. 15
40
59
4.3
56
83
-
QGD
VGS(pl)
gate-source plateau
voltage
ID = 25 A; VDS = 50 V; Fig. 14; Fig. 15
Ciss
Coss
Crss
input capacitance
output capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 16
-
-
-
10665 14400 pF
674
459
910
643
pF
pF
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 50 V; RL = 2 Ω; VGS = 10 V;
RG(ext) = 4.7 Ω
-
-
-
-
41
61.5
97.5
ns
ns
65
turn-off delay time
fall time
127
69
190.5 ns
103.5 ns
Source-drain diode
VSD source-drain voltage
trr
IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17
-
-
-
0.79
72
1.2
94
V
reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
ns
nC
VDS = 50 V
Qr
recovered charge
227
296
003aaj968
003aaj969
120
20
10
6
R
I
DSon
D
5.5
(m
)
Ω
(A)
15
10
5
80
5
40
4.5
V
(V) = 4
GS
V
0
0
0
1
2
3
4
0
4
8
12
16
(V)
V
(V)
DS
GS
Fig. 6. Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig. 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
©
PSMN4R8-100PSE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
11 July 2014
6 / 13
Nexperia
PSMN4R8-100PSE
N-channel 100 V 5 mΩ standard level MOSFET with improved SOA in
TO220 package
003aaj970
003aaj971
200
300
I
g
D
fs
(A)
(S)
160
240
120
80
180
120
60
40
T = 25
C
T = 150
C
°
°
j
j
0
0
0
60
120
180
240
300
0
2
4
6
8
V
(V)
I
(A)
GS
D
Fig. 9. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
Fig. 8. Forward transconductance as a function of
drain current; typical values
03aa35
003aad280
- 1
10
5
I
V
D
GS(th)
(A)
(V)
min
typ
max
- 2
- 3
- 4
- 5
- 6
10
10
10
10
10
4
max
3
typ
2
min
1
0
0
2
4
6
- 60
0
60
120
180
V
(V)
T (°C)
j
GS
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
Fig. 11. Gate-source threshold voltage as a function of
junction temperature
©
PSMN4R8-100PSE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
11 July 2014
7 / 13
Nexperia
PSMN4R8-100PSE
N-channel 100 V 5 mΩ standard level MOSFET with improved SOA in
TO220 package
003aad774
003aaj974
30
3.2
4.5
5
5.5
R
DSon
a
(m
)
Ω
2.4
1.6
20
10
0
6
0.8
V
(V) = 10
GS
I
0
-60
0
60
120
180
0
40
80
120
T (°C)
j
(A)
D
Fig. 12. Drain-source on-state resistance as a function Fig. 13. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
003aaj976
10
V
DS
V
GS
(V)
I
D
8
6
4
2
0
20 V
V
80 V
GS(pl)
V
GS(th)
GS
V
= 50V
DS
V
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
003aaa508
Fig. 14. Gate charge waveform definitions
0
50
100
150
200
Q
250
(nC)
G
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
©
PSMN4R8-100PSE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
11 July 2014
8 / 13
Nexperia
PSMN4R8-100PSE
N-channel 100 V 5 mΩ standard level MOSFET with improved SOA in
TO220 package
105
120
003aaj977
003aaj978
I
S
C
(pF)
(A)
C
iss
104
80
T = 175 C
°
j
103
40
C
oss
T = 25
C
°
j
C
rss
102
0
10-1
1
10
102
0
0.3
0.6
0.9
1.2
V
(V)
V
(V)
SD
DS
Fig. 16. Input, output and reverse transfer capacitances Fig. 17. Source current as a function of source-drain
as a function of drain-source voltage; typical
values
voltage; typical values
©
PSMN4R8-100PSE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
11 July 2014
9 / 13
Nexperia
PSMN4R8-100PSE
N-channel 100 V 5 mΩ standard level MOSFET with improved SOA in
TO220 package
11. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
p
A
A
1
q
mounting
D
1
base
D
(1)
(1)
L
L
1
2
Q
(2)
b
1
L
(3×)
(2)
b
2
(2×)
1
2
3
b(3×)
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
L
2
(2)
(2)
(1)
1
UNIT
mm
A
A
b
b
b
c
D
D
1
E
e
L
L
p
q
Q
1
1
2
max.
4.7
4.1
1.40
1.25
0.9
0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
15.0 3.30
12.8 2.79
3.8
3.5
3.0
2.7
2.6
2.2
2.54
3.0
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
08-04-23
08-06-13
SOT78
SC-46
3-lead TO-220AB
Fig. 18. Package outline TO-220AB (SOT78)
©
PSMN4R8-100PSE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
11 July 2014
10 / 13
Nexperia
PSMN4R8-100PSE
N-channel 100 V 5 mΩ standard level MOSFET with improved SOA in
TO220 package
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
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Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Right to make changes — Nexperia reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Suitability for use — Nexperia products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia and its suppliers accept no liability for
inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nexperia.com.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
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subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Customers are responsible for the design and operation of their
applications and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or
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whether the Nexperia product is suitable and fit for the
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representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
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Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
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damage, costs or problem which is based on any weakness or default
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necessary testing for the customer’s applications and products using Nexperia
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and the products or of the application or use by customer’s third party
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short data sheet, the full data sheet shall prevail.
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data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Nexperia
12.3 Disclaimers
products are sold subject to the general terms and conditions of commercial
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Limited warranty and liability — Information in this document is believed
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or completeness of such information and shall have no liability for the
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No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
©
PSMN4R8-100PSE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
11 July 2014
11 / 13
Nexperia
PSMN4R8-100PSE
N-channel 100 V 5 mΩ standard level MOSFET with improved SOA in
TO220 package
grant, conveyance or implication of any license under any copyrights, patents
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(b) whenever customer uses the product for automotive applications beyond
Nexperia’s specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies Nexperia for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond Nexperia’s
standard warranty and Nexperia’s product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
©
PSMN4R8-100PSE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
11 July 2014
12 / 13
Nexperia
PSMN4R8-100PSE
N-channel 100 V 5 mΩ standard level MOSFET with improved SOA in
TO220 package
13. Contents
1
General description ............................................... 1
Features and benefits ............................................1
2
3
Applications ........................................................... 1
Quick reference data ............................................. 1
Pinning information ...............................................2
Ordering information .............................................2
Marking ...................................................................2
Limiting values .......................................................2
Thermal characteristics .........................................4
Characteristics .......................................................5
Package outline ................................................... 10
4
5
6
7
8
9
10
11
12
Legal information .................................................11
Data sheet status ............................................... 11
Definitions ...........................................................11
Disclaimers .........................................................11
Trademarks ........................................................ 12
12.1
12.2
12.3
12.4
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 11 July 2014
©
PSMN4R8-100PSE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
11 July 2014
13 / 13
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