PSMN3R3-60PL [NEXPERIA]
N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78Production;型号: | PSMN3R3-60PL |
厂家: | Nexperia |
描述: | N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78Production |
文件: | 总13页 (文件大小:728K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PSMN3R3-60PL
N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78
7 February 2013
Product data sheet
1. General description
Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design
and manufacture has been optimized for use in battery operated power tools.
2. Features and benefits
High efficiency due to low switching & conduction losses
Robust construction for demanding applications
Logic level gate
•
•
•
3. Applications
Battery-powered tools
Load switching
Motor control
•
•
•
•
Uninterruptible power supplies
4. Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
60
Unit
V
VDS
ID
drain-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
VGS = 10 V; Tmb = 25 °C; Fig. 1
-
-
-
-
-
-
[1]
130
293
A
Ptot
total power dissipation Tmb = 25 °C; Fig. 2
W
Static characteristics
RDSon drain-source on-state
resistance
Dynamic characteristics
QG(tot) total gate charge
QGD gate-drain charge
Avalanche ruggedness
EDS(AL)S non-repetitive drain-
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 11
-
2.7
3.4
mΩ
VGS = 10 V; ID = 25 A; VDS = 48 V;
Fig. 13; Fig. 14
-
-
175
31
-
-
nC
nC
ID = 130 A; Vsup ≤ 60 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped;
Fig. 3
-
-
372
mJ
source avalanche
energy
[1] Continuous current is limited by package.
Nexperia
PSMN3R3-60PL
N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78
5. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
mb
D
S
1
2
3
G
D
S
gate
drain
source
G
mbb076
1
2 3
TO-220AB (SOT78)
6. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PSMN3R3-60PL
TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
7. Marking
Table 4.
Marking codes
Type number
Marking code
PSMN3R3-60PL
PSMN3R3-60PL
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
60
Unit
V
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
RGS = 20 kΩ
-
VDGR
VGS
-
60
V
-20
20
V
ID
Tmb = 25 °C; VGS = 10 V; Fig. 1
Tmb = 100 °C; VGS = 10 V; Fig. 1
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4
[1]
[1]
-
-
-
130
130
793
A
A
IDM
peak drain current
A
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PSMN3R3-60PL
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Nexperia B.V. 2017. All rights reserved
Product data sheet
7 February 2013
2 / 13
Nexperia
PSMN3R3-60PL
N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78
Symbol
Ptot
Parameter
Conditions
Min
-
Max
293
175
175
Unit
W
total power dissipation
storage temperature
junction temperature
Tmb = 25 °C; Fig. 2
Tstg
-55
-55
°C
Tj
°C
Source-drain diode
IS
source current
peak source current
Tmb = 25 °C
[1]
-
-
130
793
A
A
ISM
pulsed; tp ≤ 10 µs; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
ID = 130 A; Vsup ≤ 60 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped;
Fig. 3
-
372
mJ
[1] Continuous current is limited by package.
003aak803
03aa16
200
160
120
80
120
I
D
(A)
P
der
(%)
(1)
80
40
40
0
0
0
30
60
90
120
150
T (°C)
j
180
0
50
100
150
200
T
(°C)
mb
(1) Capped at 130A due to package
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
Fig. 1. Continuous drain current as a function of
mounting base temperature
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PSMN3R3-60PL
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Nexperia B.V. 2017. All rights reserved
Product data sheet
7 February 2013
3 / 13
Nexperia
PSMN3R3-60PL
N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78
003aak804
3
2
10
10
I
AL
(A)
(1)
(2)
10
1
-3
10
-2
-1
10
10
1
AL
10
t
(ms)
Fig. 3. Avalanche rating; avalanche current as a function of avalanche time
003aak805
3
10
I
D
(A)
t
= 10 us
Limit R
= V / I
DS
p
DSon
D
2
10
100 us
DC
10
1 ms
10 ms
1
100 ms
-1
10
-1
2
10
1
10
10
V
(V)
DS
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
Fig. 5
-
0.4
0.51
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
vertical in still air
-
60
-
K/W
©
PSMN3R3-60PL
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Nexperia B.V. 2017. All rights reserved
Product data sheet
7 February 2013
4 / 13
Nexperia
PSMN3R3-60PL
N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78
003aah288
1
Z
th(j-mb)
δ
= 0.5
(K/W)
0.2
0.1
10-1
10-2
10-3
0.05
0.02
tp
P
δ =
T
single shot
t
tp
T
10-6
10-5
10-4
10-3
10-2
10-1
1
t (s)
p
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
60
54
1.4
-
-
V
V
V
-
-
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
1.7
2.1
voltage
Fig. 9; Fig. 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 9
-
-
-
2.45
-
V
V
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 9
0.5
IDSS
drain leakage current
gate leakage current
VDS = 60 V; VGS = 0 V; Tj = 175 °C
VDS = 60 V; VGS = 0 V; Tj = 25 °C
VGS = 16 V; VDS = 0 V; Tj = 25 °C
VGS = -16 V; VDS = 0 V; Tj = 25 °C
-
-
-
-
-
-
500
1
µA
µA
nA
nA
mΩ
0.09
IGSS
2
2
3
100
100
3.8
RDSon
drain-source on-state
resistance
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
Fig. 11
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 11
-
2.7
-
3.4
7.5
2
mΩ
mΩ
Ω
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 12; Fig. 11
-
RG
gate resistance
f = 1 MHz
0.5
1
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PSMN3R3-60PL
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Nexperia B.V. 2017. All rights reserved
Product data sheet
7 February 2013
5 / 13
Nexperia
PSMN3R3-60PL
N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Dynamic characteristics
QG(tot)
total gate charge
ID = 25 A; VDS = 48 V; VGS = 5 V;
Fig. 13; Fig. 14
-
95
-
nC
ID = 25 A; VDS = 48 V; VGS = 10 V;
Fig. 13; Fig. 14
-
-
-
-
-
-
175
20
-
-
-
-
-
-
nC
nC
nC
pF
pF
pF
QGS
QGD
Ciss
Coss
Crss
gate-source charge
gate-drain charge
input capacitance
output capacitance
31
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; Fig. 15
10115
822
427
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 45 V; RL = 1.8 Ω; VGS = 5 V;
RG(ext) = 5 Ω
-
-
-
-
54.2
100
158
109
-
-
-
-
ns
ns
ns
ns
turn-off delay time
fall time
Source-drain diode
VSD source-drain voltage
trr
IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 16
-
-
-
0.78
43
1.2
V
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
-
-
ns
nC
VDS = 25 V
Qr
recovered charge
67
003aah529
003aah830
360
15
4.5
3.5
V
(V) = 10
GS
R
I
DSon
D
(m
)
Ω
(A)
240
10
3
2.8
120
5
2.6
2.4
0
0
0
1
2
3
0
2.5
5
7.5
10
V
(V)
V
(V)
DS
GS
Tj = 25 °C; tp = 300 μs
Fig. 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig. 6. Output characteristics; drain current as a
function of drain-source voltage; typical values
©
PSMN3R3-60PL
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Nexperia B.V. 2017. All rights reserved
Product data sheet
7 February 2013
6 / 13
Nexperia
PSMN3R3-60PL
N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78
003aah532
003aah025
400
3
VGS(th)
(V)
I
D
(A)
2.5
max
300
2
typ
200
100
1.5
T = 175
C
°
j
min
1
T = 25
C
°
j
0.5
0
0
0
-60
1
2
3
4
5
0
60
120
180
V
(V)
T ( C)
GS
°
j
Fig. 8. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
Fig. 9. Gate-source threshold voltage as a function of
junction temperature
003aah026
003aah835
10-1
15
ID
2.6
2.8
3
R
(A)
DSon
10-2
(m
)
Ω
10
min
typ
max
10-3
10-4
10-5
10-6
3.5
5
4.5
V
(V) = 10
GS
0
0
100
200
300
400
I (A)
0
1
2
3
D
VGS (V)
Tj = 25 °C; tp = 300 μs
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values
©
PSMN3R3-60PL
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
7 February 2013
7 / 13
Nexperia
PSMN3R3-60PL
N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78
003aag821
2.4
a
V
DS
I
D
1.8
1.2
0.6
V
GS(pl)
V
GS(th)
GS
V
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
003aaa508
0
-60
Fig. 13. Gate charge waveform definitions
0
60
120
180
°
Tj ( C)
Fig. 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
003aah582
003aah583
10
105
V
GS
C
(V)
(pF)
8
14 V
C
104
103
102
iss
6
4
V
= 48V
DS
C
oss
2
0
C
rss
0
60
120
180
10-1
1
10
102
Q
(nC)
G
V
(V)
DS
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
Fig. 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
©
PSMN3R3-60PL
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Nexperia B.V. 2017. All rights reserved
Product data sheet
7 February 2013
8 / 13
Nexperia
PSMN3R3-60PL
N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78
003aah539
400
I
S
(A)
300
200
100
0
T = 175 C
°
j
T = 25
j
C
°
0
0.5
1
1.5
V
(V)
SD
Fig. 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
©
PSMN3R3-60PL
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Nexperia B.V. 2017. All rights reserved
Product data sheet
7 February 2013
9 / 13
Nexperia
PSMN3R3-60PL
N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78
11. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
p
A
A
1
q
mounting
D
1
base
D
(1)
(1)
L
L
1
2
Q
(2)
b
1
L
(3×)
(2)
b
2
(2×)
1
2
3
b(3×)
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
L
2
(2)
(2)
(1)
1
UNIT
mm
A
A
b
b
b
c
D
D
1
E
e
L
L
p
q
Q
1
1
2
max.
4.7
4.1
1.40
1.25
0.9
0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
15.0 3.30
12.8 2.79
3.8
3.5
3.0
2.7
2.6
2.2
2.54
3.0
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
08-04-23
08-06-13
SOT78
SC-46
3-lead TO-220AB
Fig. 17. Package outline TO-220AB (SOT78)
©
PSMN3R3-60PL
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
7 February 2013
10 / 13
Nexperia
PSMN3R3-60PL
N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
12. Legal information
12.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Right to make changes — Nexperia reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Suitability for use — Nexperia products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia and its suppliers accept no liability for
inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nexperia.com.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
12.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Customers are responsible for the design and operation of their
applications and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the Nexperia product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Nexperia does not accept any liability related to any default,
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local Nexperia
sales office. In case of any inconsistency or conflict with the
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Nexperia
12.3 Disclaimers
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no
responsibility for the content in this document if provided by an information
source outside of Nexperia.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
©
PSMN3R3-60PL
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Nexperia B.V. 2017. All rights reserved
Product data sheet
7 February 2013
11 / 13
Nexperia
PSMN3R3-60PL
N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
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may be subject to export control regulations. Export might require a prior
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the product is not suitable for automotive use. It is neither qualified nor
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Nexperia accepts no liability for inclusion and/or use of non-
automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without Nexperia’s warranty
of the product for such automotive applications, use and specifications, and
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Nexperia’s specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies Nexperia for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond Nexperia’s
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between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
©
PSMN3R3-60PL
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Nexperia B.V. 2017. All rights reserved
Product data sheet
7 February 2013
12 / 13
Nexperia
PSMN3R3-60PL
N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78
13. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
Applications ........................................................... 1
Quick reference data ............................................. 1
Pinning information ...............................................2
Ordering information .............................................2
Marking ...................................................................2
Limiting values .......................................................2
Thermal characteristics .........................................4
Characteristics .......................................................5
Package outline ................................................... 10
3
4
5
6
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Legal information .................................................11
Data sheet status ............................................... 11
Definitions ...........................................................11
Disclaimers .........................................................11
Trademarks ........................................................ 12
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© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 07 February 2013
©
PSMN3R3-60PL
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
7 February 2013
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