PSMN2R0-60PS [NEXPERIA]
N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220Production;
| 型号： | PSMN2R0-60PS |
| 厂家： | 
Nexperia |
| 描述： | N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220Production |
| 文件： | 总11页 (文件大小：304K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PSMN2R0-60PS
N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220
26 October 2020
Product data sheet
1. General description
Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
2. Features and benefits
•
High efficiency due to low switching and conduction losses
•
•
Robust construction for demanding applications
Standard level gate
3. Applications
•
•
•
•
DC-to-DC converters
Load switching
Motor control
Server power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
VDS
ID
Parameter
Conditions
Min
Typ
Max
60
Unit
V
drain-source voltage
drain current
25 °C ≤ Tj ≤ 175 °C
VGS = 10 V; Tmb = 100 °C; Fig. 2
-
-
-
-
-
[1]
[2]
-
120
338
175
A
Ptot
total power dissipation Tmb = 25 °C; Fig. 1
junction temperature
-
W
Tj
-55
°C
Static characteristics
RDSon drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 12
-
-
1.8
3
2.2
3.5
mΩ
mΩ
VGS = 10 V; ID = 25 A; Tj = 100 °C;
Fig. 12; Fig. 13
Dynamic characteristics
QGD
gate-drain charge
total gate charge
ID = 75 A; VDS = 30 V; VGS = 10 V;
Fig. 14; Fig. 15
-
-
32
45
nC
nC
QG(tot)
137
192
Avalanche ruggedness
EDS(AL)S non-repetitive drain-
ID = 120 A; Vsup ≤ 60 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; Unclamped
-
-
913
mJ
source avalanche
energy
[1] Continuous current limited by package
[2] Measured 3 mm from package.
Nexperia
PSMN2R0-60PS
N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
Description
gate
Simplified outline
Graphic symbol
G
D
S
D
mb
D
S
2
drain
G
3
source
mb
mounting base; connected
to drain
mbb076
1
2 3
TO-220AB (SOT78)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
plastic, single-ended package (heatsink mounted, 1 mounting
Version
PSMN2R0-60PS
TO-220AB
SOT78
hole); 3 leads; 2.54 mm pitch; 15.6 mm x 10 mm x 4.4 mm body
7. Marking
Table 4. Marking codes
Type number
Marking code
PSMN2R0
60PS
PSMN2R0-60PS
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
Unit
V
drain-source voltage
drain-gate voltage
gate-source voltage
total power dissipation
drain current
25 °C ≤ Tj ≤ 175 °C
25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ
-
60
VDGR
VGS
-
60
V
-20
20
V
Ptot
Tmb = 25 °C; Fig. 1
-
338
120
120
1135
175
175
260
W
A
ID
VGS = 10 V; Tmb = 100 °C; Fig. 2
VGS = 10 V; Tmb = 25 °C; Fig. 2
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
[1]
[1]
-
-
A
IDM
peak drain current
storage temperature
junction temperature
-
A
Tstg
Tj
-55
-55
-
°C
°C
°C
Tsld(M)
peak soldering
temperature
©
PSMN2R0-60PS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
26 October 2020
2 / 11
Nexperia
PSMN2R0-60PS
N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220
Symbol
Parameter
Conditions
Min
Max
Unit
Source-drain diode
IS
source current
peak source current
Tmb = 25 °C
[1]
-
-
120
A
A
ISM
pulsed; tp ≤ 10 µs; Tmb = 25 °C
1135
Avalanche ruggedness
EDS(AL)S non-repetitive drain-
ID = 120 A; Vsup ≤ 60 V; RGS = 50 Ω;
-
913
mJ
source avalanche energy VGS = 10 V; Tj(init) = 25 °C; Unclamped
[1] Continuous current limited by package
120
03aa16
003aaf754
300
240
180
120
60
I
D
(A)
P
der
(%)
80
(1)
40
0
0
0
50
100
150
200
0
50
100
150
200
T
( C)
°
T
(°C)
mb
mb
Fig. 2. Continuous drain current as a function of
mounting base temperature.
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
003aaf753
104
ID
(A)
103
Limit RDSon = VDS / ID
tp =10 µs
102
10
µ
100
s
1 ms
10 ms
100 ms
1
DC
10-1
10-1
1
10
102
V DS (V)
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
©
PSMN2R0-60PS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
26 October 2020
3 / 11
Nexperia
PSMN2R0-60PS
N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance from Fig. 4
junction to mounting
base
-
0.22
0.44
K/W
Rth(j-a)
thermal resistance from Vertical in free air
junction to ambient
-
60
-
K/W
003aaf752
1
Zth (j-mb)
(K/W)
δ = 0.5
10-1
10-2
10-3
0.2
0.1
0.05
0.02
tp
P
δ =
T
single shot
t
tp
T
10-6
10-5
10-4
10-3
10-2
10-1
1
t (s)
p
Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7. Characteristics
Symbol
Static characteristics
V(BR)DSS drain-source
breakdown voltage
Parameter
Conditions
Min
Typ
Max
Unit
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 250 µA; VGS = 0 V; Tj = 25 °C
54
60
1
-
-
-
-
-
-
V
V
V
VGS(th)
gate-source threshold ID = 1 mA; VDS=VGS; Tj = 175 °C;
voltage
Fig. 10
ID = 1 mA; VDS=VGS; Tj = 25 °C; Fig. 10;
Fig. 11
2
3
4
V
ID = 1 mA; VDS=VGS; Tj = -55 °C; Fig. 10
VDS = 60 V; VGS = 0 V; Tj = 25 °C
VDS = 60 V; VGS = 0 V; Tj = 175 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
-
-
-
-
-
-
4.6
10
V
IDSS
drain leakage current
gate leakage current
0.03
µA
-
1000 µA
IGSS
-
100
100
2.2
nA
nA
mΩ
-
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 12
[1]
1.8
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 12; Fig. 13
-
-
4.3
3
5.1
3.5
mΩ
mΩ
VGS = 10 V; ID = 25 A; Tj = 100 °C;
Fig. 12; Fig. 13
©
PSMN2R0-60PS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
26 October 2020
4 / 11
Nexperia
PSMN2R0-60PS
N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
RG
gate resistance
f = 1 MHz
0.45
0.9
1.8
Ω
Dynamic characteristics
QG(tot)
total gate charge
ID = 75 A; VDS = 30 V; VGS = 10 V;
Fig. 14; Fig. 15
-
-
137
129
192
181
nC
nC
ID = 0 A; VDS = 0 V; VGS = 10 V; Fig. 14;
Fig. 15
QGS
gate-source charge
ID = 75 A; VDS = 30 V; VGS = 10 V;
Fig. 14; Fig. 15
-
-
48
29
68
-
nC
nC
QGS(th)
pre-threshold gate-
source charge
QGS(th-pl)
post-threshold gate-
source charge
-
19
-
nC
QGD
gate-drain charge
-
-
32
45
-
nC
V
VGS(pl)
gate-source plateau
voltage
VDS = 30 V; Fig. 14; Fig. 15
5.7
Ciss
Coss
Crss
input capacitance
output capacitance
VDS = 30 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 16
-
-
-
9997 13500 pF
1210 1640 pF
reverse transfer
capacitance
594
835
pF
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 30 V; RL = 0.4 Ω; VGS = 10 V;
RG(ext) = 4.7 Ω
-
-
-
-
42
63
ns
ns
ns
ns
56
84
turn-off delay time
fall time
115
49
173
74
Source-drain diode
VSD
trr
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17
-
-
-
0.8
57
80
1.2
75
V
reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
ns
nC
VDS = 30 V
Qr
recovered charge
104
[1] Measured 3 mm from package.
003aaf742
003aaf743
250
80
g
(S)
fs
I
D
(A)
200
60
150
100
50
40
20
0
T = 175
j
C
°
T = 25
C
°
j
0
0
30
60
90
120
0
2
4
6
V
(V)
I
(A)
GS
D
Fig. 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig. 5. Forward transconductance as a function of
drain current; typical values
©
PSMN2R0-60PS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
26 October 2020
5 / 11
Nexperia
PSMN2R0-60PS
N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220
003aaf744
003aaf746
12
105
R
DSon
(m
)
10
Ω
C
(pF)
C
iss
8
6
4
2
0
104
C
rss
103
102
10-1
0
5
10
15
20
1
10
102
V
(V)
GS
V
(V)
GS
Fig. 8. Input and reverse transfer capacitances as a
function of gate-source voltage, typical values
Fig. 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
003aad280
003aad674
5
200
8
10
V
6
GS(th)
(V)
I
D
(A)
5
4
max
150
4.5
3
typ
100
50
0
2
min
V
(V) = 4
GS
1
0
- 60
0
0.5
1
1.5
2
0
60
120
180
V
(V)
DS
T (°C)
j
Fig. 10. Gate-source threshold voltage as a function of
junction temperature
Fig. 9. Output characteristics: drain current as a
function of drain-source voltage; typical values
©
PSMN2R0-60PS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
26 October 2020
6 / 11
Nexperia
PSMN2R0-60PS
N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220
03aa35
003aaf751
- 1
10
10
RDSon
(mΩ)
I
D
(A)
min
typ
max
- 2
- 3
- 4
- 5
- 6
10
8
4.8
VGS (V) = 4.5
5.0
10
10
10
10
6
4
2
0
5.5
6.0
10.0
20.0
0
50
100
150
0
2
4
6
ID (A)
V
(V)
GS
Fig. 11. Sub-threshold drain current as a function of
gate-source voltage
Fig. 12. Drain-source on-state resistance as a function
of drain current; typical values
003aaf747
2.4
V
DS
a
2
I
D
1.6
1.2
0.8
0.4
0
V
V
GS(pl)
GS(th)
V
GS
Q
GS2
Q
GS1
Q
Q
-60
0
60
120
180
GS
GD
T (°C)
j
Q
G(tot)
003aaa508
Fig. 14. Gate charge waveform definitions
Fig. 13. Drain-source on-state resistance as a function
of gate-source voltage; typical values
©
PSMN2R0-60PS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
26 October 2020
7 / 11
Nexperia
PSMN2R0-60PS
N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220
003aaf748
003aaf749
105
10
V
(V)
GS
C
(pF)
48V
30V
8
104
103
102
10
C
iss
V
= 12V
DS
6
4
2
C
oss
C
rss
0
0
10-1
1
10
102
40
80
120
160
V
(V)
Q
(nC)
DS
G
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
Fig. 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
003aaf750
200
I
S
(A)
160
120
80
40
T = 175
C
T = 25 C
°
°
j
j
0
0
0.3
0.6
0.9
1.2
V
(V)
SD
Fig. 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
©
PSMN2R0-60PS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
26 October 2020
8 / 11
Nexperia
PSMN2R0-60PS
N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220
11. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
p
A
A
1
q
mounting
D
1
base
D
(1)
(1)
L
L
1
2
Q
(2)
b
1
L
(3×)
(2)
b
2
(2×)
1
2
3
b(3×)
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
L
2
(2)
(2)
(1)
1
UNIT
mm
A
A
b
b
b
c
D
D
1
E
e
L
L
p
q
Q
1
1
2
max.
4.7
4.1
1.40
1.25
0.9
0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
15.0 3.30
12.8 2.79
3.8
3.5
3.0
2.7
2.6
2.2
2.54
3.0
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
08-04-23
08-06-13
SOT78
SC-46
3-lead TO-220AB
Fig. 18. Package outline TO-220AB (SOT78)
©
PSMN2R0-60PS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
26 October 2020
9 / 11
Nexperia
PSMN2R0-60PS
N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220
injury, death or severe property or environmental damage. Nexperia and its
suppliers accept no liability for inclusion and/or use of Nexperia products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
12. Legal information
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Data sheet status
Document status Product
Definition
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
[1][2]
status [3]
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Nexperia product is suitable
and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Nexperia products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Nexperia does not accept any
liability in this respect.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
Definitions
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of commercial sale — Nexperia products are
sold subject to the general terms and conditions of commercial sale, as
published at http://www.nexperia.com/profile/terms, unless otherwise agreed
in a valid written individual agreement. In case an individual agreement is
concluded only the terms and conditions of the respective agreement shall
apply. Nexperia hereby expressly objects to applying the customer’s general
terms and conditions with regard to the purchase of Nexperia products by
customer.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be
valid in which the Nexperia product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no responsibility
for the content in this document if provided by an information source outside
of Nexperia.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Nexperia product is automotive qualified, the
product is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Nexperia
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
In no event shall Nexperia be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without Nexperia’s warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
Nexperia’s specifications such use shall be solely at customer’s own risk,
and (c) customer fully indemnifies Nexperia for any liability, damages or failed
product claims resulting from customer design and use of the product for
automotive applications beyond Nexperia’s standard warranty and Nexperia’s
product specifications.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Nexperia.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Right to make changes — Nexperia reserves the right to make changes
to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Trademarks
Suitability for use — Nexperia products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction
of an Nexperia product can reasonably be expected to result in personal
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
©
PSMN2R0-60PS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
26 October 2020
10 / 11
Nexperia
PSMN2R0-60PS
N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 2
9. Thermal characteristics............................................... 4
10. Characteristics............................................................4
11. Package outline.......................................................... 9
12. Legal information......................................................10
© Nexperia B.V. 2020. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 26 October 2020
©
PSMN2R0-60PS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
26 October 2020
11 / 11
相关型号：
PSMN2R0-60PS,127
PSMN2R0-60PS - N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220 TO-220 3-Pin
NXP
PSMN2R1-30YLE
N-channel 30 V, 2.2 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56Production
NEXPERIA
PSMN2R2-25YLC
N-channel 25 V 2.4 mΩ logic level MOSFET in LFPAK using NextPower technologyProduction
NEXPERIA
PSMN2R2-25YLC,115
PSMN2R2-25YLC - N-channel 25 V 2.4 mΩ logic level MOSFET in LFPAK using NextPower technology SOIC 4-Pin
NXP
PSMN2R2-30YLC
N-channel 30 V 2.15 mΩ logic level MOSFET in LFPAK using NextPower technologyProduction
NEXPERIA
PSMN2R2-30YLC,115
PSMN2R2-30YLC - N-channel 30 V 2.15 mΩ logic level MOSFET in LFPAK using NextPower technology SOIC 4-Pin
NXP
©2020 ICPDF网 联系我们和版权申明