PMZB600UNEL [NEXPERIA]
20 V, N-channel Trench MOSFETProduction;
| 型号： | PMZB600UNEL |
| 厂家： | 
Nexperia |
| 描述： | 20 V, N-channel Trench MOSFETProduction |
| 文件： | 总15页 (文件大小：721K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PMZB600UNEL
20 V, N-channel Trench MOSFET
5 December 2016
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3
(SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
•
Low leakage current
•
•
•
Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.37 mm
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Drain-source on-state resistance RDSon = 470 mΩ
3. Applications
•
•
•
•
Relay driver
High-speed line driver
Low-side load switch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
VDS
Parameter
Conditions
Min
Typ
Max
20
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
VGS
-8
-
8
V
[1]
ID
VGS = 4.5 V; Tamb = 25 °C
0.6
A
Static characteristics
RDSon drain-source on-state
resistance
VGS = 4.5 V; ID = 0.6 A; Tj = 25 °C
-
470
620
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Nexperia
PMZB600UNEL
20 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
D
G
S
D
gate
1
2
3
2
source
drain
3
G
Transparent
top view
DFN1006B-3 (SOT883B)
S
017aaa255
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PMZB600UNEL
DFN1006B-3 DFN1006B-3: leadless ultra small plastic package; 3 solder
lands; body 1.0 x 0.6 x 0.37 mm
SOT883B
7. Marking
Table 4. Marking codes
Type number
Marking code
PMZB600UNEL
0101 1110
PIN 1 INDICATION
READING DIRECTION
READING EXAMPLE:
0111
1011
MARKING CODE
(EXAMPLE)
READING DIRECTION
006aac673
Fig. 1. DFN1006B-3 (SOT883B) binary marking code description
©
PMZB600UNEL
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
5 December 2016
2 / 15
Nexperia
PMZB600UNEL
20 V, N-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
20
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
VGS
-8
8
V
[1]
[1]
ID
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
-
0.6
A
-
0.4
A
IDM
Ptot
peak drain current
-
2.5
A
[2]
[1]
total power dissipation
-
360
715
2700
150
150
150
mW
mW
mW
°C
°C
°C
-
Tsp = 25 °C
-
Tj
junction temperature
ambient temperature
storage temperature
-55
-55
-65
Tamb
Tstg
Source-drain diode
IS source current
[1]
Tamb = 25 °C
-
0.4
A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
017aaa123
017aaa124
120
120
P
I
der
der
(%)
(%)
80
80
40
40
0
- 75
0
- 75
- 25
25
75
125
175
- 25
25
75
125
175
T (°C)
j
T (°C)
j
Fig. 2. Normalized total power dissipation as a
function of junction temperature
Fig. 3. Normalized continuous drain current as a
function of junction temperature
©
PMZB600UNEL
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
5 December 2016
3 / 15
Nexperia
PMZB600UNEL
20 V, N-channel Trench MOSFET
aaa-012964
10
Limit R
= V /I
DS
DSon
D
I
D
(A)
t
t
= 100 µs
= 1 ms
p
p
1
t
t
= 10 ms
p
p
-1
10
10
DC; T = 25 °C
sp
= 100 ms
DC; T
= 25 °C;
amb
drain mounting pad 1 cm
2
-2
-1
2
10
1
10
10
V
(V)
DS
IDM = single pulse
Fig. 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
305
150
Max
360
175
Unit
K/W
K/W
[1]
[2]
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
-
-
Rth(j-sp)
thermal resistance
from junction to solder
point
-
-
40
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
©
PMZB600UNEL
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
5 December 2016
4 / 15
Nexperia
PMZB600UNEL
20 V, N-channel Trench MOSFET
017aaa109
3
10
duty cycle = 1
0.75
Z
th(j-a)
(K/W)
0.5
0.33
0.2
2
10
0.25
0.05
0.1
0
0.02
0.01
10
10
- 3
- 2
- 1
2
3
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa110
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
2
10
0.5
0.33
0.2
0.25
0.1
0.05
0.02
0.01
0
10
10
- 3
- 2
- 1
2
3
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for drain 1 cm2
Fig. 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PMZB600UNEL
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
5 December 2016
5 / 15
Nexperia
PMZB600UNEL
20 V, N-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Static characteristics
V(BR)DSS drain-source
breakdown voltage
Parameter
Conditions
Min
Typ
Max
Unit
ID = 250 µA; VGS = 0 V; Tj = 25 °C
20
-
-
V
V
VGSth
gate-source threshold ID = 250 µA; VDS=VGS; Tj = 25 °C
voltage
0.45
0.7
0.95
IDSS
drain leakage current
gate leakage current
VDS = 20 V; VGS = 0 V; Tj = 25 °C
VDS = 20 V; VGS = 0 V; Tj = 150 °C
VDS = 5 V; VGS = 0 V; Tj = 25 °C
VGS = 8 V; VDS = 0 V; Tj = 25 °C
VGS = -8 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C
VGS = 1.8 V; VDS = 0 V; Tj = 25 °C
VGS = -1.8 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; ID = 0.6 A; Tj = 25 °C
VGS = 4.5 V; ID = 0.6 A; Tj = 150 °C
VGS = 2.5 V; ID = 0.5 A; Tj = 25 °C
VGS = 1.8 V; ID = 0.1 A; Tj = 25 °C
VGS = 1.5 V; ID = 10 mA; Tj = 25 °C
VGS = 1.2 V; ID = 1 mA; Tj = 25 °C
VDS = 5 V; ID = 0.6 A; Tj = 25 °C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1
µA
µA
nA
µA
µA
µA
µA
nA
nA
mΩ
-
10
25
10
-10
1
-
IGSS
-
-
-
-
-1
-
50
-50
620
-
RDSon
drain-source on-state
resistance
470
760
620
845
1000 mΩ
850 mΩ
1300 mΩ
1125 3000 mΩ
2210
1
-
-
mΩ
S
gfs
forward
transconductance
RG
gate resistance
f = 1 MHz
-
34
-
Ω
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
VDS = 10 V; ID = 0.6 A; VGS = 4.5 V;
Tj = 25 °C
-
-
-
-
-
-
0.4
0.1
0.1
21.3
5.4
4.2
0.7
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
-
-
-
-
-
VDS = 10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
Coss
Crss
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 10 V; ID = 0.6 A; VGS = 4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
5.6
9.2
19
-
-
-
-
ns
ns
ns
ns
turn-off delay time
fall time
51
Source-drain diode
VSD
source-drain voltage
IS = 0.36 A; VGS = 0 V; Tj = 25 °C
-
0.8
1.2
V
©
PMZB600UNEL
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
5 December 2016
6 / 15
Nexperia
PMZB600UNEL
20 V, N-channel Trench MOSFET
aaa-008998
aaa-008999
-3
-4
-5
-6
2.5
10
D
4.5 V
I
D
(A)
I
(A)
2.0
2.5 V
10
1.5
1.0
0.5
0
min
typ
max
1.8 V
1.5 V
10
10
V
= 1.2 V
GS
0
1
2
3
4
0
0.5
1.0
1.5
V
(V)
V
(V)
GS
DS
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
Fig. 7. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig. 8. Sub-threshold drain current as a function of
gate-source voltage
aaa-009000
aaa-009001
3
3
1.5 V
2 V
R
DSon
(Ω)
R
DSon
(Ω)
1.2 V
1.8 V
2.5 V
2
2
3 V
1
0
1
0
T = 150 °C
j
V
= 4.5 V
GS
T = 25 °C
j
0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
5
I
(A)
V
(V)
GS
D
Tj = 25 °C
ID = 0.6 A
Fig. 9. Drain-source on-state resistance as a function Fig. 10. Drain-source on-state resistance as a function
of drain current; typical values
of gate-source voltage; typical values
©
PMZB600UNEL
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
5 December 2016
7 / 15
Nexperia
PMZB600UNEL
20 V, N-channel Trench MOSFET
aaa-009002
aaa-009003
2.5
2.0
1.5
1.0
0.5
0
I
D
(A)
a
2.0
1.5
1.0
0.5
0
T = 150 °C
j
T = 25 °C
j
0
1
2
3
4
5
-60
0
60
120
180
V
(V)
T (°C)
j
GS
VDS > ID x RDSon
Fig. 11. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig. 12. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
aaa-009004
aaa-009005
2
1.5
10
V
GS(th)
(V)
C
(pF)
1.0
0.5
0
C
iss
10
max
C
C
oss
typ
rss
min
1
-1
10
2
-60
0
60
120
180
1
10
10
T (°C)
V
(V)
DS
j
ID = 0.25 mA; VDS = VGS
f = 1 MHz; VGS = 0 V
Fig. 13. Gate-source threshold voltage as a function of Fig. 14. Input, output and reverse transfer capacitances
junction temperature
as a function of drain-source voltage; typical
values
©
PMZB600UNEL
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
5 December 2016
8 / 15
Nexperia
PMZB600UNEL
20 V, N-channel Trench MOSFET
aaa-009006
5
V
DS
V
GS
(V)
I
D
4
3
2
1
0
V
GS(pl)
V
GS(th)
GS
V
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
017aaa137
Fig. 16. MOSFET transistor: Gate charge waveform
definitions
0
0.1
0.2
0.3
0.4
Q
0.5
(nC)
G
ID = 0.6 A; VDS = 10 V; Tamb = 25 °C
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
aaa-009007
2.5
I
S
(A)
2.0
1.5
1.0
0.5
0
T = 150 °C
j
T = 25 °C
j
0
0.4
0.8
1.2
1.6
V
2.0
(V)
SD
VGS = 0 V
Fig. 17. Source current as a function of source-drain voltage; typical values
©
PMZB600UNEL
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
5 December 2016
9 / 15
Nexperia
PMZB600UNEL
20 V, N-channel Trench MOSFET
11. Package outline
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm
SOT883B
L (2x)
L
1
2
b (2x)
3
b
e
1
1
e
1
A
A
1
E
D
0
0.5
1 mm
scale
Dimensions
Unit
(1)
A
A
b
b
D
E
e
e
L
L
1
1
1
1
max 0.40 0.04 0.20 0.55 0.65 1.05
0.30 0.30
0.25 0.25
0.22 0.22
nom 0.37
min 0.34
0.15 0.50 0.60 1.00
0.12 0.47 0.55 0.95
mm
0.35 0.65
Note
1. Including plating thickness
sot883b_po
References
Outline
version
European
Issue date
projection
IEC
JEDEC
JEITA
11-11-02
12-01-03
SOT883B
Fig. 18. Package outline DFN1006B-3 (SOT883B)
©
PMZB600UNEL
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
5 December 2016
10 / 15
Nexperia
PMZB600UNEL
20 V, N-channel Trench MOSFET
12. Soldering
Footprint information for reflow soldering
SOT883B
1.3
0.7
R0.05 (8x)
0.9
0.7
0.6
0.25
(2x)
0.3
(2x)
0.3
0.4
0.4
(2x)
solder land
solder land plus solder paste
solder paste deposit
occupied area
solder resist
Dimensions in mm
sot883b_fr
Fig. 19. Reflow soldering footprint for DFN1006B-3 (SOT883B)
©
PMZB600UNEL
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
5 December 2016
11 / 15
Nexperia
PMZB600UNEL
20 V, N-channel Trench MOSFET
13. Revision history
Table 8. Revision history
Data sheet ID
Release date
20161205
Data sheet status
Change notice
Supersedes
PMZB600UNEL v.1
Product data sheet
-
-
©
PMZB600UNEL
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
5 December 2016
12 / 15
Nexperia
PMZB600UNEL
20 V, N-channel Trench MOSFET
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
14. Legal information
Right to make changes — Nexperia reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Data sheet status
Document
status [1] [2]
Product
status [3]
Definition
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authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
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Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
[1] Please consult the most recently issued document before initiating or
completing a design.
Applications — Applications that are described herein for any of these
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no representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
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the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
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repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
short data sheet, the full data sheet shall prevail.
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©
PMZB600UNEL
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Nexperia B.V. 2017. All rights reserved
Product data sheet
5 December 2016
13 / 15
Nexperia
PMZB600UNEL
20 V, N-channel Trench MOSFET
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Nexperia’s specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies Nexperia for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond Nexperia’s
standard warranty and Nexperia’s product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
©
PMZB600UNEL
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
5 December 2016
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Nexperia
PMZB600UNEL
20 V, N-channel Trench MOSFET
15. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 4
10. Characteristics............................................................6
11. Package outline........................................................ 10
12. Soldering................................................................... 11
13. Revision history........................................................12
14. Legal information..................................................... 13
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 05 December 2016
©
PMZB600UNEL
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
5 December 2016
15 / 15
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