PMV48XP [NEXPERIA]

20 V, 3.5 A P-channel Trench MOSFETProduction;
PMV48XP
型号: PMV48XP
厂家: Nexperia    Nexperia
描述:

20 V, 3.5 A P-channel Trench MOSFETProduction

PC 开关 光电二极管 晶体管
文件: 总15页 (文件大小:750K)
中文:  中文翻译
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PMV48XP  
20 V, 3.5 A P-channel Trench MOSFET  
Rev. 1 — 21 December 2010  
Product data sheet  
1. Product profile  
1.1 General description  
P-channel enhancement mode Field-Effect Transistor (FET) in a small  
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using  
Trench MOSFET technology.  
1.2 Features and benefits  
„ Logic-level compatible  
„ Very fast switching  
„ Trench MOSFET technology  
1.3 Applications  
„ High-side loadswitch  
„ High-speed line driver  
„ Relay driver  
„ Switching circuits  
1.4 Quick reference data  
Table 1.  
Symbol  
VDS  
Quick reference data  
Parameter  
Conditions  
Min Typ Max Unit  
drain-source  
voltage  
Tamb = 25 °C  
-
-
-
-
-20  
V
V
A
VGS  
ID  
gate-source  
voltage  
-12  
-
12  
[1]  
drain current  
VGS = -4.5 V; Tamb = 25 °C  
-3.5  
Static characteristics  
RDSon drain-source  
VGS = -4.5 V; ID = -2.4 A;  
pulsed; tp 300 µs; δ ≤ 0.01;  
Tj = 25 °C  
-
48  
55  
mΩ  
on-state  
resistance  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for  
drain 6 cm2.  
PMV48XP  
Nexperia  
20 V, 3.5 A P-channel Trench MOSFET  
2. Pinning information  
Table 2.  
Pinning information  
Symbol Description  
Pin  
1
Simplified outline  
Graphic symbol  
G
S
D
gate  
D
3
2
source  
drain  
3
G
1
2
S
SOT23 (TO-236AB)  
017aaa094  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name  
Description  
Version  
PMV48XP  
TO-236AB  
plastic surface-mounted package; 3 leads  
SOT23  
4. Marking  
Table 4.  
Marking codes  
Type number  
PMV48XP  
Marking code[1]  
KN%  
[1] % = placeholder for manufacturing site code  
PMV48XP  
All information provided in this document is subject to legal disclaimers.  
Product data sheet  
Rev. 1 — 21 December 2010  
2 of 15  
©
Nexperia B.V. 2017. All rights reserved  
PMV48XP  
Nexperia  
20 V, 3.5 A P-channel Trench MOSFET  
5. Limiting values  
Table 5.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VDS  
Parameter  
Conditions  
Min  
Max  
-20  
Unit  
V
drain-source voltage  
gate-source voltage  
drain current  
Tamb = 25 °C  
-
VGS  
-12  
12  
V
[1]  
[1]  
ID  
VGS = -4.5 V; Tamb = 25 °C  
VGS = -4.5 V; Tamb = 100 °C  
Tamb = 25 °C; single pulse; tp 10 µs  
Tamb = 25 °C  
-
-3.5  
-2.2  
-14  
A
-
A
IDM  
Ptot  
peak drain current  
-
A
[2]  
[1]  
total power dissipation  
-
510  
930  
mW  
mW  
-
Tsp = 25 °C  
-
4150 mW  
Tj  
junction temperature  
ambient temperature  
storage temperature  
-
150  
150  
150  
°C  
°C  
°C  
Tamb  
Tstg  
-55  
-65  
Source-drain diode  
IS source current  
[1]  
Tamb = 25 °C  
-
-1  
A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.  
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
017aaa123  
017aaa124  
120  
120  
P
der  
I
der  
(%)  
(%)  
80  
80  
40  
40  
0
75  
0
75  
25  
25  
75  
125  
175  
25  
25  
75  
125  
175  
T (°C)  
j
T (°C)  
j
Fig 1. Normalized total power dissipation as a  
function of junction temperature  
Fig 2. Normalized continuous drain current as a  
function of junction temperature  
PMV48XP  
All information provided in this document is subject to legal disclaimers.  
Product data sheet  
Rev. 1 — 21 December 2010  
3 of 15  
©
Nexperia B.V. 2017. All rights reserved  
PMV48XP  
Nexperia  
20 V, 3.5 A P-channel Trench MOSFET  
017aaa125  
2
10  
I
D
(A)  
Limit R  
= V /I  
DS D  
DSon  
10  
(1)  
(2)  
1  
1  
(3)  
(4)  
(5)  
10  
(6)  
2  
10  
10  
1  
2
1  
10  
10  
V
DS  
(V)  
IDM = single pulse  
(1) tp = 100 µs  
(2) tp = 1 ms  
(3) tp = 10 ms  
(4) DC; Tsp = 25 °C  
(5) tp = 100 ms  
(6) DC; Tamb = 25 °C; drain mounting pad 6 cm2  
Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source  
voltage  
6. Thermal characteristics  
Table 6.  
Symbol  
Rth(j-a)  
Thermal characteristics  
Parameter  
Conditions  
Min  
Typ  
213  
117  
Max  
245  
135  
Unit  
K/W  
K/W  
[1]  
[2]  
thermal resistance  
from junction to  
ambient  
in free air  
-
-
Rth(j-sp)  
thermal resistance  
from junction to solder  
point  
-
25  
30  
K/W  
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.  
PMV48XP  
All information provided in this document is subject to legal disclaimers.  
Product data sheet  
Rev. 1 — 21 December 2010  
4 of 15  
©
Nexperia B.V. 2017. All rights reserved  
PMV48XP  
Nexperia  
20 V, 3.5 A P-channel Trench MOSFET  
017aaa126  
3
10  
Z
th(j-a)  
(K/W)  
duty cycle = 1  
0.75  
0.5  
2
10  
0.33  
0.2  
0.25  
0.1  
0.05  
10  
0.02  
0
0.01  
1
10  
3  
2  
1  
2
3
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB, standard footprint  
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values  
017aaa127  
3
10  
Z
th(j-a)  
(K/W)  
duty cycle = 1  
0.75  
2
10  
0.5  
0.33  
0.2  
0.25  
0.1  
0
0.05  
10  
0.02  
0.01  
1
10  
3  
2  
1  
2
3
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB, mounting pad for drain 6 cm2  
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values  
PMV48XP  
All information provided in this document is subject to legal disclaimers.  
Product data sheet  
Rev. 1 — 21 December 2010  
5 of 15  
©
Nexperia B.V. 2017. All rights reserved  
PMV48XP  
Nexperia  
20 V, 3.5 A P-channel Trench MOSFET  
7. Characteristics  
Table 7.  
Symbol  
Characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Static characteristics  
V(BR)DSS drain-source  
breakdown voltage  
ID = -250 µA; VGS = 0 V; Tj = 25 °C  
-20  
-
-
V
V
VGSth  
gate-source threshold ID = -250 µA; VDS = VGS; Tj = 25 °C  
voltage  
-0.75 -1  
-1.25  
IDSS  
drain leakage current  
gate leakage current  
VDS = -20 V; VGS = 0 V; Tamb = 25 °C  
VGS = -12 V; VDS = 0 V; Tj = 25 °C  
-
-
-
-
-1  
µA  
nA  
IGSS  
-
-100  
55  
RDSon  
drain-source on-state  
resistance  
VGS = -4.5 V; ID = -2.4 A; pulsed;  
tp 300 µs; δ ≤ 0.01 ; Tj = 25 °C  
48  
mΩ  
VGS = -4.5 V; ID = -2.4 A; pulsed;  
tp 300 µs; δ ≤ 0.01 ; Tj = 150 °C  
-
-
-
70  
71  
12  
80  
81  
-
mΩ  
mΩ  
S
VGS = -2.5 V; ID = -2 A; pulsed;  
tp 300 µs; δ ≤ 0.01 ; Tj = 25 °C  
gfs  
forward  
VDS = -12 V; ID = -2 A; pulsed;  
transconductance  
tp 300 µs; δ ≤ 0.01 ; Tj = 25 °C  
Dynamic characteristics  
QG(tot)  
QGS  
QGD  
Ciss  
total gate charge  
ID = -1 A; VDS = -10 V; VGS = -4.5 V;  
Tj = 25 °C  
-
-
-
-
-
-
8.5  
1.8  
1.8  
11  
-
nC  
nC  
nC  
pF  
pF  
pF  
gate-source charge  
gate-drain charge  
input capacitance  
output capacitance  
-
VGS = 0 V; VDS = -10 V; f = 1 MHz;  
Tj = 25 °C  
1000  
130  
90  
-
Coss  
Crss  
-
reverse transfer  
capacitance  
-
td(on)  
tr  
td(off)  
tf  
turn-on delay time  
rise time  
VDS = -10 V; VGS = -4.5 V; RG(ext) = 6 ;  
Tj = 25 °C; ID = -1 A  
-
-
-
-
11  
13  
61  
23  
-
-
-
-
ns  
ns  
ns  
ns  
turn-off delay time  
fall time  
Source-drain diode  
VSD  
source-drain voltage  
IS = -2.4 A; VGS = 0 V; Tj = 25 °C;  
-
-0.82 -1.2  
V
tp 300 µs; δ ≤ 0.01  
PMV48XP  
All information provided in this document is subject to legal disclaimers.  
Product data sheet  
Rev. 1 — 21 December 2010  
6 of 15  
©
Nexperia B.V. 2017. All rights reserved  
PMV48XP  
Nexperia  
20 V, 3.5 A P-channel Trench MOSFET  
017aaa128  
017aaa129  
3  
4  
5  
6  
14  
10  
V
= 4.5 V  
I
GS  
D
(A)  
12  
I
D
3 V  
2.25 V  
(A)  
10  
8  
10  
(1)  
(2)  
(3)  
6  
2 V  
10  
10  
4  
1.8 V  
2  
0
0
1  
2  
3  
4  
5  
(V)  
0.0  
0.5  
1.0  
1.5  
V
DS  
V
(V)  
GS  
Tj = 25 °C  
Tj = 25 °C; VDS = -3 V  
(1) minimum values  
(2) typical values  
(3) maximum values  
Fig 6. Output characteristics: drain current as a  
function of drain-source voltage; typical values  
Fig 7. Sub-threshold drain current as a function of  
gate-source voltage  
017aaa130  
017aaa131  
0.20  
0.25  
R
DSon  
R
DSon  
(Ω)  
(Ω)  
(1)  
(2)  
0.16  
0.12  
0.08  
0.04  
0.00  
0.20  
0.15  
0.10  
0.05  
0.00  
(3)  
(4)  
(5)  
(1)  
(2)  
0.0  
4.0  
8.0  
12.0  
0
1  
2  
3  
4  
5  
(V)  
I
(A)  
V
GS  
D
Tj = 25 °C  
ID = -2.4 A  
(1) VGS = -1.8 V  
(2) VGS = -2.0 V  
(3) VGS = -2.25 V  
(4) VGS = -3.0 V  
(5) VGS = -4.5 V  
(1) Tj = 125 °C  
(2) Tj = 25 °C  
Fig 8. Drain-source on-state resistance as a function  
of drain current; typical values  
Fig 9. Drain-source on-state resistance as a function  
of gate-source voltage; typical values  
PMV48XP  
All information provided in this document is subject to legal disclaimers.  
Product data sheet  
Rev. 1 — 21 December 2010  
7 of 15  
©
Nexperia B.V. 2017. All rights reserved  
PMV48XP  
Nexperia  
20 V, 3.5 A P-channel Trench MOSFET  
017aaa132  
017aaa133  
14  
2.0  
1.5  
1.0  
0.5  
0.0  
I
D
(A)  
12  
a
(1)  
(2)  
10  
8  
6  
4  
2  
0
(2)  
(1)  
0.0  
1.0  
2.0  
3.0  
60  
0
60  
120  
180  
V
(V)  
T (°C)  
j
GS  
VDS > ID × RDSon  
(1) Tj = 25 °C  
(2) Tj = 150 °C  
Fig 10. Transfer characteristics: drain current as a  
function of gate-source voltage; typical values  
Fig 11. Normalized drain-source on-state resistance as  
a function of junction temperature; typical  
values  
017aaa134  
017aaa135  
4
1.6  
10  
V
GS(th)  
(V)  
C
(pF)  
(1)  
(2)  
1.2  
0.8  
0.4  
0.0  
(1)  
3
10  
(2)  
(3)  
2
10  
(3)  
10  
10  
1  
2
60  
0
60  
120  
180  
1  
10  
10  
T (°C)  
j
V
(V)  
DS  
f = 1 MHz; VGS = 0 V  
(1) Ciss  
ID = -0.25 mA; VDS = VGS  
(1) maximum values  
(2) typical values  
(2) Coss  
(3) Crss  
(3) minimum values  
Fig 12. Gate-source threshold voltage as a function of  
junction temperature  
Fig 13. Input, output and reverse transfer capacitances  
as a function of drain-source voltage; typical  
values  
PMV48XP  
All information provided in this document is subject to legal disclaimers.  
Product data sheet  
Rev. 1 — 21 December 2010  
8 of 15  
©
Nexperia B.V. 2017. All rights reserved  
PMV48XP  
Nexperia  
20 V, 3.5 A P-channel Trench MOSFET  
017aaa136  
4.5  
V
DS  
V
GS  
I
(V)  
D
3.0  
V
GS(pl)  
V
GS(th)  
GS  
V
1.5  
Q
Q
GS1  
GS2  
Q
Q
GD  
GS  
Q
G(tot)  
017aaa137  
0.0  
0
2
4
6
8
10  
(nC)  
Q
G
ID = -2.4 A; VDS = -10 V; Tamb = 25 °C  
Fig 14. Gate-source voltage as a function of gate  
charge; typical values  
Fig 15. Gate charge waveform definitions  
017aaa138  
14  
S
I
(A)  
12  
10  
8  
6  
4  
2  
0
(1)  
(2)  
0.0  
0.4  
0.8  
1.2  
V
(V)  
SD  
VGS = 0 V  
(1) Tj = 150 °C  
(2) Tj = 25 °C  
Fig 16. Source current as a function of source-drain voltage; typical values  
PMV48XP  
All information provided in this document is subject to legal disclaimers.  
Product data sheet  
Rev. 1 — 21 December 2010  
9 of 15  
©
Nexperia B.V. 2017. All rights reserved  
PMV48XP  
Nexperia  
20 V, 3.5 A P-channel Trench MOSFET  
8. Package outline  
Plastic surface-mounted package; 3 leads  
SOT23  
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w M  
B
1
L
p
p
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
UNIT  
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.  
1.1  
0.9  
0.48  
0.38  
0.15  
0.09  
3.0  
2.8  
1.4  
1.2  
2.5  
2.1  
0.45  
0.15  
0.55  
0.45  
mm  
0.1  
1.9  
0.95  
0.2  
0.1  
REFERENCES  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
JEDEC  
JEITA  
04-11-04  
06-03-16  
SOT23  
TO-236AB  
Fig 17. Package outline SOT23 (TO-236AB)  
PMV48XP  
All information provided in this document is subject to legal disclaimers.  
Product data sheet  
Rev. 1 — 21 December 2010  
10 of 15  
©
Nexperia B.V. 2017. All rights reserved  
PMV48XP  
Nexperia  
20 V, 3.5 A P-channel Trench MOSFET  
9. Soldering  
3.3  
2.9  
1.9  
solder lands  
solder resist  
2
3
1.7  
solder paste  
occupied area  
0.6  
0.7  
(3×)  
(3×)  
Dimensions in mm  
0.5  
(3×)  
0.6  
(3×)  
1
sot023_fr  
Fig 18. Reflow soldering footprint for SOT23 (TO-236AB)  
2.2  
1.2  
(2×)  
1.4  
(2×)  
solder lands  
solder resist  
2.6  
4.6  
occupied area  
Dimensions in mm  
1.4  
preferred transport direction during soldering  
2.8  
4.5  
sot023_fw  
Fig 19. Wave soldering footprint for SOT23 (TO-236AB)  
PMV48XP  
All information provided in this document is subject to legal disclaimers.  
Product data sheet  
Rev. 1 — 21 December 2010  
11 of 15  
©
Nexperia B.V. 2017. All rights reserved  
PMV48XP  
Nexperia  
20 V, 3.5 A P-channel Trench MOSFET  
10. Revision history  
Table 8.  
Revision history  
Document ID  
Release date  
Data sheet status  
Change notice  
Supersedes  
PMV48XP v.1  
20101221  
Product data sheet  
-
-
PMV48XP  
All information provided in this document is subject to legal disclaimers.  
Product data sheet  
Rev. 1 — 21 December 2010  
12 of 15  
©
Nexperia B.V. 2017. All rights reserved  
PMV48XP  
Nexperia  
20 V, 3.5 A P-channel Trench MOSFET  
11. Legal information  
11.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Definition  
Objective [short] data sheet  
Development  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term 'short data sheet' is explained in section "Definitions".  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product  
status information is available on the Internet at URL http://www.nexperia.com.  
Suitability for use — Nexperia products are not designed,  
11.2 Definitions  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. Nexperia does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
authorized or warranted to be suitable for use in life support, life-critical or  
safety-critical systems or equipment, nor in applications where failure or  
malfunction of a Nexperia product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
damage. Nexperia accepts no liability for inclusion and/or use of  
Nexperia products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local Nexperia sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. Nexperia makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
Nexperia and its customer, unless Nexperia and  
Customers are responsible for the design and operation of their applications  
and products using Nexperia products, and Nexperia  
accepts no liability for any assistance with applications or customer product  
design. It is customer’s sole responsibility to determine whether the Nexperia  
product is suitable and fit for the customer’s applications and  
products planned, as well as for the planned application and use of  
customer’s third party customer(s). Customers should provide appropriate  
design and operating safeguards to minimize the risks associated with their  
applications and products.  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the Nexperia product is  
deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
11.3 Disclaimers  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, Nexperia does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information.  
Nexperia does not accept any liability related to any default,  
damage, costs or problem which is based on any weakness or default in the  
customer’s applications or products, or the application or use by customer’s  
third party customer(s). Customer is responsible for doing all necessary  
testing for the customer’s applications and products using Nexperia  
products in order to avoid a default of the applications and  
In no event shall Nexperia be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
the products or of the application or use by customer’s third party  
customer(s). Nexperia does not accept any liability in this respect.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, Nexperia’s aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the Terms and conditions of commercial sale of Nexperia.  
Right to make changes — Nexperia reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
Terms and conditions of commercial sale — Nexperia  
products are sold subject to the general terms and conditions of commercial  
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
PMV48XP  
All information provided in this document is subject to legal disclaimers.  
Product data sheet  
Rev. 1 — 21 December 2010  
13 of 15  
©
Nexperia B.V. 2017. All rights reserved  
PMV48XP  
Nexperia  
20 V, 3.5 A P-channel Trench MOSFET  
agreement shall apply. Nexperia hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of Nexperia products by customer.  
product for such automotive applications, use and specifications, and (b)  
whenever customer uses the product for automotive applications beyond  
Nexperia’s specifications such use shall be solely at customer’s  
own risk, and (c) customer fully indemnifies Nexperia for any  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
liability, damages or failed product claims resulting from customer design and  
use of the product for automotive applications beyond Nexperia’s  
standard warranty and Nexperia’s product specifications.  
Export control — This document as well as the item(s) described herein may  
be subject to export control regulations. Export might require a prior  
authorization from national authorities.  
11.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
Non-automotive qualified products — Unless this data sheet expressly  
states that this specific Nexperia product is automotive qualified,  
the product is not suitable for automotive use. It is neither qualified nor tested  
in accordance with automotive testing or application requirements. Nexperia  
accepts no liability for inclusion and/or use of  
non-automotive qualified products in automotive equipment or applications.  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards, customer  
(a) shall use the product without Nexperia’s warranty of the  
12. Contact information  
For more information, please visit: http://www.nexperia.com  
For sales office addresses, please send an email to: salesaddresses@nexperia.com  
PMV48XP  
All information provided in this document is subject to legal disclaimers.  
Product data sheet  
Rev. 1 — 21 December 2010  
14 of 15  
©
Nexperia B.V. 2017. All rights reserved  
PMV48XP  
Nexperia  
20 V, 3.5 A P-channel Trench MOSFET  
13. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1  
1.1  
1.2  
1.3  
1.4  
General description . . . . . . . . . . . . . . . . . . . . . .1  
Features and benefits. . . . . . . . . . . . . . . . . . . . .1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1  
Quick reference data . . . . . . . . . . . . . . . . . . . . .1  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2  
Ordering information. . . . . . . . . . . . . . . . . . . . . .2  
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3  
Thermal characteristics . . . . . . . . . . . . . . . . . . .4  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10  
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .12  
3
4
5
6
7
8
9
10  
11  
Legal information. . . . . . . . . . . . . . . . . . . . . . . .13  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .13  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .13  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14  
11.1  
11.2  
11.3  
11.4  
12  
Contact information. . . . . . . . . . . . . . . . . . . . . .14  
© Nexperia B.V. 2017. All rights reserved  
For more information, please visit: http://www.nexperia.com  
For sales office addresses, please send an email to: salesaddresses@nexperia.com  
Date of release: 21 December 2010  

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