PMPB20XPE [NEXPERIA]
20 V, single P-channel Trench MOSFETProduction;
| 型号： | PMPB20XPE |
| 厂家： | 
Nexperia |
| 描述： | 20 V, single P-channel Trench MOSFETProduction |
| 文件： | 总14页 (文件大小：748K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PMPB20XPE
20 V, single P-channel Trench MOSFET
30 November 2012
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
2.4 kV ESD protected
•
•
•
•
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
Tin-plated 100 % solderable side pads for optical solder inspection
1.3 Applications
Charging switch for portable devices
DC-to-DC converters
Power management in battery-driven portable devices
Hard disk and computing power management
•
•
•
•
1.4 Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
-20
Unit
V
VDS
VGS
ID
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
-12
-
12
V
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = -4.5 V; ID = -7.2 A; Tj = 25 °C
[1]
-10.3
A
Static characteristics
RDSon drain-source on-state
resistance
-
19
23.5
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
Nexperia
PMPB20XPE
20 V, single P-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
D
1
2
3
4
5
6
7
8
D
D
G
S
D
D
D
S
drain
drain
gate
1
6
5
4
7
2
3
Transparent top view
G
8
source
drain
drain
drain
source
DFN2020MD-6 (SOT1220)
S
017aaa259
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
SOT1220
PMPB20XPE
DFN2020MD-6 plastic thermal enhanced ultra thin small outline package; no
leads; 6 terminals
4. Marking
Table 4.
Marking codes
Type number
Marking code
PMPB20XPE
1D
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
-20
Unit
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
V
V
A
A
A
A
W
VGS
-12
12
ID
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = -4.5 V; Tamb = 25 °C
[1]
[1]
[1]
-
-
-
-
-10.3
-7.2
-4.5
-30
VGS = -4.5 V; Tamb = 100 °C
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
[1]
-
1.7
©
PMPB20XPE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
30 November 2012
2 / 14
Nexperia
PMPB20XPE
20 V, single P-channel Trench MOSFET
Symbol
Parameter
Conditions
Min
-
Max
3.5
Unit
W
Tamb = 25 °C; t ≤ 5 s
Tsp = 25 °C
[1]
-
12.5
150
150
150
W
Tj
junction temperature
ambient temperature
storage temperature
-55
-55
-65
°C
°C
°C
Tamb
Tstg
Source-drain diode
IS
source current
Tamb = 25 °C
[1]
[2]
-
-
-1.9
A
V
ESD maximum rating
VESD
electrostatic discharge voltage HBM
2400
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
[2] Measured between all pins.
017aaa123
017aaa124
120
120
P
der
(%)
I
der
(%)
80
80
40
40
0
- 75
0
- 75
- 25
25
75
125
175
- 25
25
75
125
175
T (°C)
j
T (°C)
j
Fig. 1. Normalized total power dissipation as a
function of junction temperature
Fig. 2. Normalized continuous drain current as a
function of junction temperature
©
PMPB20XPE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
30 November 2012
3 / 14
Nexperia
PMPB20XPE
20 V, single P-channel Trench MOSFET
017aaa875
2
-10
Limit R
= V /I
DS
DSon
D
I
D
t
t
= 10 µs
(A)
p
p
-10
= 100 µs
= 1 ms
t
p
p
-1
-1
t
= 10 ms
t
= 100 ms
p
DC; T = 25 °C
sp
-10
DC; T
= 25 °C;
amb
2
drain mounting pad 6 cm
-2
-10
-2
-1
2
-10
-10
-1
-10
-10
V
(V)
DS
IDM = single pulse
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
6. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
235
67
Max
270
74
Unit
K/W
K/W
K/W
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
[2]
[2]
-
-
-
-
in free air; t ≤ 5 s
33
36
Rth(j-sp)
thermal resistance
from junction to solder
point
5
10
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
©
PMPB20XPE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
30 November 2012
4 / 14
Nexperia
PMPB20XPE
20 V, single P-channel Trench MOSFET
017aaa542
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.5
2
10
0.33
0.25
0.2
0.1
0.05
0.02
10
0.01
0
1
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa543
3
10
Z
th(j-a)
(K/W)
2
10
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
10
0.05
0.02
0.01
0
1
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 6 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
-20
-
-
V
V
VGSth
gate-source threshold ID = -250 µA; VDS = VGS; Tj = 25 °C
voltage
-0.47 -0.68 -0.9
IDSS
drain leakage current
gate leakage current
VDS = -20 V; VGS = 0 V; Tj = 25 °C
-
-
-
-
-1
µA
µA
IGSS
VGS = -8 V; VDS = 0 V; Tj = 25 °C
All information provided in this document is subject to legal disclaimers.
30 November 2012
-10
©
PMPB20XPE
Nexperia B.V. 2017. All rights reserved
Product data sheet
5 / 14
Nexperia
PMPB20XPE
20 V, single P-channel Trench MOSFET
Symbol
Parameter
Conditions
Min
Typ
-
Max
10
Unit
µA
VGS = 8 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; ID = -7.2 A; Tj = 25 °C
VGS = -4.5 V; ID = -7.2 A; Tj = 150 °C
VGS = -2.5 V; ID = -6.4 A; Tj = 25 °C
VGS = -1.8 V; ID = -3.7 A; Tj = 25 °C
VDS = -10 V; ID = -7.2 A; Tj = 25 °C
-
-
-
-
-
-
RDSon
drain-source on-state
resistance
19
27
22
28
50
23.5
33
mΩ
mΩ
mΩ
mΩ
S
29
39
gfs
forward
-
transconductance
RG
gate resistance
f = 1 MHz
-
5.2
-
Ω
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
VDS = -10 V; ID = -7.2 A; VGS = -4.5 V;
Tj = 25 °C
-
-
-
-
-
-
30
45
-
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
4.1
7.1
-
VDS = -10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
2945
245
210
-
Coss
Crss
-
reverse transfer
capacitance
-
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = -10 V; ID = -7.2 A; VGS = -4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
13
60
92
50
-
-
-
-
ns
ns
ns
ns
turn-off delay time
fall time
Source-drain diode
VSD source-drain voltage
IS = -1.9 A; VGS = 0 V; Tj = 25 °C
-
-0.7
-1.2
V
017aaa876
017aaa877
-2
-28
-10
-4.5 V
-2.5 V
-1.9 V
-1.8 V
I
D
(A)
-24
I
D
(A)
-1.7 V
-1.6 V
-3
-4
-5
-6
-10
-20
-16
-12
-8
min
typ
max
-10
-10
-10
-1.5 V
V
= -1.4 V
GS
-4
0
0
-1
-2
-3
-4
0
-0.4
-0.8
-1.2
V
(V)
V
(V)
GS
DS
Tj = 25 °C
Tj = 25 °C; VDS = -5 V
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
©
PMPB20XPE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
30 November 2012
6 / 14
Nexperia
PMPB20XPE
20 V, single P-channel Trench MOSFET
017aaa878
-1.8 V
017aaa879
80
80
-1.4 V -1.5 V -1.6 V
-1.7 V
R
DSon
R
DSon
(mΩ)
(mΩ)
60
60
-1.9 V
40
20
0
40
20
0
T = 150 °C
j
-2.5 V
V
= -4.5 V
T = 25 °C
j
GS
0
-4
-8
-12
-16
-20
-24
-28
0
-1
-2
-3
-4
-5
I
(A)
V
(V)
GS
D
Tj = 25 °C
ID = -7.1 A
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values
of gate-source voltage; typical values
017aaa880
017aaa881
-28
1.6
I
D
a
(A)
-24
1.4
1.2
1.0
0.8
0.6
-20
-16
-12
-8
T = 150 °C
j
T = 25 °C
j
-4
0
0
-0.5
-1.0
-1.5
-2.0
-60
0
60
120
180
V
(V)
T (°C)
j
GS
VDS > ID × RDSon
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
©
PMPB20XPE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
30 November 2012
7 / 14
Nexperia
PMPB20XPE
20 V, single P-channel Trench MOSFET
017aaa882
017aaa883
4
-1.2
10
V
GS(th)
(V)
C
(pF)
C
iss
max
typ
-0.8
-0.4
0
3
10
min
C
C
oss
rss
2
10
-1
2
-60
0
60
120
180
-10
-1
-10
-10
T (°C)
j
V
(V)
DS
ID = -0.25 mA; VDS = VGS
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances
junction temperature
as a function of drain-source voltage; typical
values
017aaa884
-4.5
GS
V
DS
V
I
D
(V)
-3.0
V
GS(pl)
V
GS(th)
GS
V
-1.5
Q
GS1
Q
GS2
Q
Q
GD
GS
Q
G(tot)
017aaa137
0
Fig. 15. MOSFET transistor: Gate charge waveform
definitions
0
5
10
15
20
25
30
(nC)
35
Q
G
ID = -7.1 A; VDS = -10 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
©
PMPB20XPE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
30 November 2012
8 / 14
Nexperia
PMPB20XPE
20 V, single P-channel Trench MOSFET
aaa-004181
-2.0
S
I
(A)
-1.5
-1.0
-0.5
0.0
T = 150 °C
T = 25 °C
j
j
0.0
-0.2
-0.4
-0.6
-0.8
V
(V)
SD
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
8. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 17. Duty cycle definition
9. Package outline
0.51
0.61
0.2
0.3
0.2
0.3
3
4
5
6
0.25
0.35
1.9
2.1
2
1
1.0
1.2
1.1
1.3
0.65
1.9
2.1
Dimensions in mm
12-04-30
Fig. 18. Package outline DFN2020MD-6 (SOT1220)
©
PMPB20XPE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
30 November 2012
9 / 14
Nexperia
PMPB20XPE
20 V, single P-channel Trench MOSFET
10. Soldering
Footprint information for reflow soldering of DFN2020MD-6 package
SOT1220
0.33 (6×)
0.43 (6×)
0.53 (6×)
0.76
0.66
0.56
0.25 0.35 0.45
0.775
0.285
0.65
2.06
1.25
0.35 (6×)
0.65
1.35
1.05
0.25 (6×)
0.45 (6×)
0.9
1.1
1.2
0.935
0.935
2.5
solder land
solder land plus solder paste
solder paste deposit
occupied area
solder resist
Dimensions in mm
sot1220_fr
Fig. 19. Reflow soldering footprint for DFN2020MD-6 (SOT1220)
©
PMPB20XPE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
30 November 2012
10 / 14
Nexperia
PMPB20XPE
20 V, single P-channel Trench MOSFET
11. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMPB20XPE v.1
20121130
Product data sheet
-
-
©
PMPB20XPE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
30 November 2012
11 / 14
Nexperia
PMPB20XPE
20 V, single P-channel Trench MOSFET
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
12. Legal information
12.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Right to make changes — Nexperia reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Suitability for use — Nexperia products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia and its suppliers accept no liability for
inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nexperia.com.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
12.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Customers are responsible for the design and operation of their
applications and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or
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whether the Nexperia product is suitable and fit for the
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Draft — The document is a draft version only. The content is still under
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representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
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Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local Nexperia
sales office. In case of any inconsistency or conflict with the
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Nexperia
12.3 Disclaimers
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
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applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no
responsibility for the content in this document if provided by an information
source outside of Nexperia.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
©
PMPB20XPE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
30 November 2012
12 / 14
Nexperia
PMPB20XPE
20 V, single P-channel Trench MOSFET
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between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
©
PMPB20XPE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
30 November 2012
13 / 14
Nexperia
PMPB20XPE
20 V, single P-channel Trench MOSFET
13. Contents
1
Product profile ....................................................... 1
1.1
1.2
1.3
1.4
General description .............................................. 1
Features and benefits ...........................................1
Applications ..........................................................1
Quick reference data ............................................ 1
2
Pinning information ...............................................2
Ordering information .............................................2
Marking ...................................................................2
Limiting values .......................................................2
Thermal characteristics .........................................4
Characteristics .......................................................5
Test information .....................................................9
Package outline ..................................................... 9
Soldering .............................................................. 10
Revision history ...................................................11
3
4
5
6
7
8
9
10
11
12
Legal information .................................................12
Data sheet status ............................................... 12
Definitions ...........................................................12
Disclaimers .........................................................12
Trademarks ........................................................ 13
12.1
12.2
12.3
12.4
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 30 November 2012
©
PMPB20XPE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
30 November 2012
14 / 14
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