PMP4501V [NEXPERIA]

45 V, 100 mA NPN/NPN matched double transistorProduction;


型号：	PMP4501V
厂家：	Nexperia
描述：	45 V, 100 mA NPN/NPN matched double transistorProduction
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中文：	中文翻译
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PMP4501V

45 V, 100 mA NPN/NPN matched double transistor

28 December 2022

Product data sheet

1. General description

NPN/NPN matched double transistor in an ultra small Surface-Mounted Device (SMD) plastic

package. The transistors in the SOT666 package are fully isolated internally.

NPN/NPN hFE1/hFE2 0.98 complement: PMP4201V

PNP/PNP complement: PMP5501V

2. Features and benefits

•

Current gain matching

•

Base-emitter voltage matching

Application-optimized pinout

3. Applications

•

Current mirror

Differential amplifier

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V_CEO

collector-emitter

voltage

open base

I_C

collector current

DC current gain

100

450

h_FE

V_CE= 5 V; I_C= 2 mA; T_amb= 25 °C

200

290

Per device

h_FE1/h_FE2

DC current gain

matching

[1]

[2]

0.95

V_BE1−V_BE2

base-emitter voltage

matching

[1] The smaller of the two values is taken as the numerator.

[2] The smaller of the two values is subtracted from the larger value.

Nexperia

PMP4501V

45 V, 100 mA NPN/NPN matched double transistor

5. Pinning information

Table 2. Pinning information

Symbol

Description

base TR1

Simplified outline

Graphic symbol

TR2

base TR2

TR1

collector TR2

emitter TR2

emitter TR1

collector TR1

006aaa548

SOT666

6. Ordering information

Table 3. Ordering information

Type number

Package

Name

Description

Version

PMP4501V

SOT666

plastic, surface-mounted package; 6 leads; 0.5 mm pitch; SOT666

1.6 mm x 1.2 mm x 0.55 mm body

7. Marking

Table 4. Marking codes

Type number

Marking code

PMP4501V

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per transistor

V_CBO

V_CEO

V_EBO

I_C

collector-base voltage

open emitter

collector-emitter voltage open base

emitter-base voltage

collector current

open collector

100

200

I_CM

peak collector current

total power dissipation

single pulse; t_p≤ 1 ms

T_amb≤ 25 °C

P_tot

[1] [2]

Per device

P_tot

total power dissipation

junction temperature

ambient temperature

storage temperature

T_amb≤ 25 °C

300

150

°C

T_j

T_amb

T_stg

-65

°C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

[2] Reflow soldering is the only recommended soldering method.

PMP4501V

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Product data sheet

28 December 2022

2 / 9

Nexperia

PMP4501V

45 V, 100 mA NPN/NPN matched double transistor

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

R_th(j-a)

thermal resistance from

junction to ambient

[1] [2]

625

K/W

Per device

R_th(j-a)

thermal resistance from

junction to ambient

416

K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Reflow soldering is the only recommended soldering method.

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

I_CBO

collector-base cut-off

current

V_CB= 30 V; I_E= 0 A; T_amb= 25 °C

V_CB= 30 V; I_E= 0 A; T_amb= 150 °C

V_EB= 5 V; I_C= 0 A; T_amb= 25 °C

µA

I_EBO

h_FE

emitter-base cut-off

current

100

DC current gain

V_CE= 5 V; I_C= 10 µA; T_amb= 25 °C

V_CE= 5 V; I_C= 2 mA; T_amb= 25 °C

I_C= 10 mA; I_B= 0.5 mA; T_amb= 25 °C

I_C= 100 mA; I_B= 5 mA; T_amb= 25 °C

250

290

200

450

200

400

V_CEsat

V_BEsat

V_BE

collector-emitter

saturation voltage

200

760

910

660

base-emitter saturation I_C= 10 mA; I_B= 0.5 mA; T_amb= 25 °C

voltage

[1]

[2]

I_C= 100 mA; I_B= 5 mA; T_amb= 25 °C

base-emitter voltage

V_CE= 5 V; I_C= 2 mA; T_amb= 25 °C

V_CE= 5 V; I_C= 10 mA; T_amb= 25 °C

610

710

770

1.5

C_c

C_e

f_T

collector capacitance

emitter capacitance

transition frequency

noise figure

V_CB= 10 V; I_E= 0 A; i_e= 0 A; f = 1 MHz;

T_amb= 25 °C

V_EB= 0.5 V; I_C= 0 A; i_c= 0 A;

f = 1 MHz; T_amb= 25 °C

V_CE= 5 V; I_C= 10 mA; f = 100 MHz;

T_amb= 25 °C

100

250

2.8

3.3

MHz

V_CE= 5 V; I_C= 0.2 mA; R_S= 2 kΩ;

f = 10 Hz to 15.7 kHz; T_amb= 25 °C

V_CE= 5 V; I_C= 0.2 mA; R_S= 2 kΩ;

B = 200 Hz; f = 1 kHz

Per device

h_FE1/h_FE2

DC current gain

matching

V_CE= 5 V; I_C= 2 mA; T_amb= 25 °C

[3]

[4]

0.95

V_BE1−V_BE2

base-emitter voltage

matching

[1] V_BEsatdecreases by about 1.7 mV/K with increasing temperature.

[2] V_BEdecreases by about 2 mV/K with increasing temperature.

[3] The smaller of the two values is taken as the numerator.

[4] The smaller of the two values is subtracted from the larger value.

PMP4501V

All information provided in this document is subject to legal disclaimers.

Product data sheet

28 December 2022

3 / 9

Nexperia

PMP4501V

45 V, 100 mA NPN/NPN matched double transistor

006aaa532

006aaa533

0.20

600

(mA) = 4.50

4.05

3.60

(A)

0.16

3.15

2.70

2.25

1.80

1.35

400

(1)

(2)

(3)

0.12

0.08

0.04

0.90

0.45

200

- 2

- 1

I (mA)

(V)

T_amb= 25 °C

V_CE= 5 V

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

Fig. 1. Collector current as a function of collector-

emitter voltage; typical values

Fig. 2. DC current gain as a function of collector

current; typical values

006aaa534

006aaa535

1.3

BEsat

(V)

CEsat

(V)

1.1

0.9

0.7

0.5

0.3

0.1

(1)

(2)

(3)

- 1

(1)

(2)

(3)

- 2

- 1

(mA)

I (mA)

I_C/I_B= 20

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

Fig. 3. Base-emitter saturation voltage as a function of Fig. 4. Collector-emitter saturation voltage as a

collector current; typical values

function of collector current; typical values

PMP4501V

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Product data sheet

28 December 2022

4 / 9

Nexperia

PMP4501V

45 V, 100 mA NPN/NPN matched double transistor

006aaa536

006aaa537

(V)

(MHz)

0.8

0.6

0.4

- 1

(mA)

I (mA)

V_CE= 5 V; T_amb= 25 °C

Fig. 5. Base-emitter voltage as a function of collector Fig. 6. Transition frequency as a function of collector

current; typical values current; typical values

V_CE= 5 V; T_amb= 25 °C

006aaa538

006aaa539

(pF)

(V)

f = 1 MHz; T_amb= 25 °C

Fig. 7. Collector capacitance as a function of collector- Fig. 8. Emitter capacitance as a function of emitter-

base voltage; typical values

11. Application information

V+

OUT1

OUT2

IN2

IN1

TR1

TR2

out

TR1

TR2

V-

006aaa523

006aaa525

Fig. 9. Current mirror

Fig. 10. Differential amplifier

PMP4501V

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Product data sheet

28 December 2022

5 / 9

Nexperia

PMP4501V

45 V, 100 mA NPN/NPN matched double transistor

12. Package outline

1.7

1.5

0.6

0.5

0.3

0.1

1.7 1.3

1.5 1.1

pin 1 index

0.18

0.08

0.27

0.17

0.5

Dimensions in mm

04-11-08

Fig. 11. Package outline SOT666

13. Soldering

2.75

2.45

2.1

1.6

solder lands

0.4

(6×)

0.3

(2×)

0.25

(2×)

placement area

0.538

0.55

1.075

1.7

(2×)

solder paste

occupied area

0.325 0.375

(4×) (4×)

Dimensions in mm

1.7

0.45

(4×)

0.6

(2×)

0.5

(4×)

0.65

(2×)

sot666_fr

Fig. 12. Reflow soldering footprint for SOT666

PMP4501V

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Product data sheet

28 December 2022

6 / 9

Nexperia

PMP4501V

45 V, 100 mA NPN/NPN matched double transistor

14. Revision history

Table 8. Revision history

Data sheet ID

PMP4501V v.5

Modifications:

Release date

20221228

Data sheet status

Change notice

Supersedes

Product data sheet

PMP4501V_G_Y_4

•

The format of this data sheet has been redesigned to comply with the identity guidelines of

Nexperia.

•

Legal texts have been adapted to the new company name where appropriate.

Packing information removed.

Product(s) changed to non-automotive qualification.

PMP4501V_G_Y_4

PMP4501V_G_Y_3

PMP4501G_Y_2

PMP4501G_Y_1

20090828

20060919

20060214

20060202

Product data sheet

PMP4501V_G_Y_3

PMP4501G_Y_2

PMP4501G_Y_1

PMP4501V

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Product data sheet

28 December 2022

7 / 9

Nexperia

PMP4501V

45 V, 100 mA NPN/NPN matched double transistor

injury, death or severe property or environmental damage. Nexperia and its

suppliers accept no liability for inclusion and/or use of Nexperia products in

such equipment or applications and therefore such inclusion and/or use is at

the customer’s own risk.

15. Legal information

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Data sheet status

Document status Product

Definition

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no representation

or warranty that such applications will be suitable for the specified use

without further testing or modification.

[1][2]

status [3]

Objective [short]

data sheet

Development

This document contains data from

the objective specification for

product development.

Customers are responsible for the design and operation of their applications

and products using Nexperia products, and Nexperia accepts no liability for

any assistance with applications or customer product design. It is customer’s

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Customers should provide appropriate design and operating safeguards to

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Preliminary [short]

data sheet

Qualification

Production

This document contains data from

the preliminary specification.

Product [short]

data sheet

This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

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Definitions

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

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Characteristics sections of this document is not warranted. Constant or

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PMP4501V

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Product data sheet

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Nexperia

PMP4501V

45 V, 100 mA NPN/NPN matched double transistor

Contents

1. General description......................................................1

2. Features and benefits.................................................. 1

3. Applications.................................................................. 1

4. Quick reference data....................................................1

5. Pinning information......................................................2

6. Ordering information....................................................2

7. Marking..........................................................................2

8. Limiting values............................................................. 2

9. Thermal characteristics............................................... 3

10. Characteristics............................................................3

11. Application information..............................................5

12. Package outline.......................................................... 6

13. Soldering..................................................................... 6

14. Revision history..........................................................7

15. Legal information........................................................8

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 28 December 2022

PMP4501V

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Product data sheet

28 December 2022

9 / 9

PMP4501V [NEXPERIA]

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