PMN48XPA [NEXPERIA]
20 V, P-channel Trench MOSFETProduction;
| 型号： | PMN48XPA |
| 厂家： | 
Nexperia |
| 描述： | 20 V, P-channel Trench MOSFETProduction |
| 文件： | 总14页 (文件大小：261K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PMN48XPA
20 V, P-channel Trench MOSFET
17 May 2019
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-
Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
•
Logic-level compatible
•
•
•
Trench MOSFET technology
Very fast switching
AEC-Q101 qualified
3. Applications
•
•
•
•
Relay driver
High-speed line driver
High-side load switch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
VDS
Parameter
Conditions
Min
Typ
Max
-20
12
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
VGS
-12
-
V
ID
VGS = -4.5 V; Tamb = 25 °C
[1]
-4.1
A
Static characteristics
RDSon drain-source on-state
resistance
VGS = -4.5 V; ID = -2.4 A; Tj = 25 °C
-
48
55
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.
Nexperia
PMN48XPA
20 V, P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
6
5
4
3
D
D
D
G
S
D
D
drain
drain
gate
2
G
3
1
2
4
source
drain
drain
S
TSOP6 (SOT457)
017aaa257
5
6
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PMN48XPA
TSOP6
plastic surface-mounted package (TSOP6); 6 leads
SOT457
7. Marking
Table 4. Marking codes
Type number
Marking code
PMN48XPA
BA
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PMN48XPA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2019. All rights reserved
Product data sheet
17 May 2019
2 / 14
Nexperia
PMN48XPA
20 V, P-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
-20
12
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
VGS
-12
V
ID
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
[1]
[1]
-
-4.1
-2.5
-20
530
1.3
A
-
A
IDM
Ptot
peak drain current
-
A
total power dissipation
[2]
[1]
-
mW
W
W
°C
°C
°C
-
Tsp = 25 °C
-
6.3
Tj
junction temperature
ambient temperature
storage temperature
-55
-55
-65
150
150
150
Tamb
Tstg
Source-drain diode
IS source current
Tamb = 25 °C
[1]
-
-1.4
A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
017aaa123
017aaa124
120
120
P
der
(%)
I
der
(%)
80
80
40
40
0
- 75
0
- 75
- 25
25
75
125
175
- 25
25
75
125
175
T (°C)
j
T (°C)
j
Fig. 1. Normalized total power dissipation as a
function of junction temperature
Fig. 2. Normalized continuous drain current as a
function of junction temperature
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PMN48XPA
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Nexperia B.V. 2019. All rights reserved
Product data sheet
17 May 2019
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Nexperia
PMN48XPA
20 V, P-channel Trench MOSFET
017aaa202
2
-10
I
D
Limit R
= V /I
DS
DSon
D
(A)
-10
100 µs
1 ms
-1
-1
10 ms
DC; T = 25 °C
sp
100 ms
-10
DC; T
amb
drain mounting pad 6 cm
= 25 °C;
2
-2
-10
-1
2
-10
-1
-10
-10
V
(V)
DS
IDM = single pulse
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
©
PMN48XPA
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Nexperia B.V. 2019. All rights reserved
Product data sheet
17 May 2019
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Nexperia
PMN48XPA
20 V, P-channel Trench MOSFET
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
204
84
Max
235
97
Unit
K/W
K/W
K/W
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1]
[2]
-
-
-
Rth(j-sp)
thermal resistance from
junction to solder point
17
20
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2.
017aaa203
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.50
2
10
0.33
0.25
0.20
0.10
0.05
10
0.02
0
0.01
1
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa204
3
10
Z
th(j-a)
(K/W)
2
duty cycle = 1
10
0.75
0.50
0.33
0.25
0.20
0.10
0.05
10
0.02
0.01
0
1
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 6 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PMN48XPA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2019. All rights reserved
Product data sheet
17 May 2019
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Nexperia
PMN48XPA
20 V, P-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Static characteristics
V(BR)DSS drain-source
breakdown voltage
Parameter
Conditions
Min
Typ
Max
Unit
ID = -250 µA; VGS = 0 V; Tj = 25 °C
-20
-
-
V
V
VGSth
gate-source threshold ID = -250 µA; VDS=VGS; Tj = 25 °C
voltage
-0.75 -1
-1.25
IDSS
drain leakage current
VDS = -20 V; VGS = 0 V; Tj = 25 °C
VDS = -20 V; VGS = 0 V; Tj = 150 °C
VGS = -12 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; ID = -2.4 A; Tj = 25 °C
VGS = -4.5 V; ID = -2.4 A; Tj = 150 °C
VGS = -2.5 V; ID = -2 A; Tj = 25 °C
VDS = -5 V; ID = -2.4 A; Tj = 25 °C
-
-
-
-
-
-
-
-
-1
µA
µA
nA
mΩ
mΩ
mΩ
S
-
-10
-100
55
80
82
-
IGSS
gate leakage current
-
RDSon
drain-source on-state
resistance
48
70
72
10
gfs
forward
transconductance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
VDS = -10 V; ID = -1 A; VGS = -4.5 V;
Tj = 25 °C
-
-
-
-
-
-
8.7
13
-
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
1.8
1.7
-
VDS = -10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
1000
130
90
-
Coss
Crss
-
reverse transfer
capacitance
-
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = -10 V; ID = -1 A; VGS = -5 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
15
22
51
22
-
-
-
-
ns
ns
ns
ns
turn-off delay time
fall time
Source-drain diode
VSD
source-drain voltage
IS = -2.4 A; VGS = 0 V; Tj = 25 °C
-
-0.75 -1
V
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PMN48XPA
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Nexperia B.V. 2019. All rights reserved
Product data sheet
17 May 2019
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Nexperia
PMN48XPA
20 V, P-channel Trench MOSFET
017aaa205
-2.5 V
017aaa129
-3
-4
-5
-6
-14
D
(A)
-12
-10
I
-4.5 V
I
D
V
= -2.75 V
GS
(A)
min
typ
max
-10
-8
-10
-2 V
-6
-10
-10
-4
-1.6 V
-4
-2
0
0
-1
-2
-3
-5
0
-0.5
-1.0
- 1.5
V
(V)
V
(V)
GS
DS
Tj = 25 °C
Tj = 25 °C; VDS = -3 V
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
017aaa206
017aaa131
160
250
R
(m
DSon
R
DSon
(mΩ)
)
-2.5 V
-1.6 V
-2.0 V
200
120
150
100
50
80
40
0
-2.75 V
= -4.5 V
T = 125 °C
j
V
GS
T = 25 °C
j
0
0
-2
-4
-6
-8
-10
-12
-14
0
-1
-2
-3
-4
-5
(V)
I
(A)
V
GS
D
Tj = 25 °C
ID = -2.4 A
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values
of gate-source voltage; typical values
©
PMN48XPA
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Nexperia B.V. 2019. All rights reserved
Product data sheet
17 May 2019
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Nexperia
PMN48XPA
20 V, P-channel Trench MOSFET
017aaa207
017aaa133
-14
D
(A)
-12
2.0
1.5
1.0
0.5
0.0
I
a
-10
-8
-6
-4
-2
0
T = 150 °C
j
T = 25 °C
j
0
-1
-2
V
-3
-60
0
60
120
180
(V)
T (°C)
j
GS
VDS > ID × RDSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
017aaa134
017aaa135
4
-1.6
10
V
GS(th)
(V)
C
(pF)
max
typ
-1.2
-0.8
-0.4
0.0
C
iss
3
2
10
C
C
oss
min
10
rss
10
-1
-10
2
-60
0
60
120
180
-1
-10
-10
T (°C)
j
V
(V)
DS
ID = -0.25 mA; VDS = VGS
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances
junction temperature
as a function of drain-source voltage; typical
values
©
PMN48XPA
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Nexperia B.V. 2019. All rights reserved
Product data sheet
17 May 2019
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Nexperia
PMN48XPA
20 V, P-channel Trench MOSFET
017aaa136
-4.5
V
DS
V
GS
(V)
I
D
-3.0
V
GS(pl)
V
GS(th)
GS
V
-1.5
Q
GS1
Q
GS2
Q
Q
GD
GS
Q
G(tot)
017aaa137
0
Fig. 15. Gate charge waveform definitions
0
2
4
6
8
10
(nC)
Q
G
ID = -2.4 A; VDS = -10 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
017aaa138
-14
I
S
(A)
-12
-10
-8
-6
-4
-2
0
T = 150 °C
T = 25 °C
j
j
0
-0.4
-0.8
-1.2
V
(V)
SD
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
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PMN48XPA
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Nexperia B.V. 2019. All rights reserved
Product data sheet
17 May 2019
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Nexperia
PMN48XPA
20 V, P-channel Trench MOSFET
11. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 17. Duty cycle definition
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
12. Package outline
3.1
2.7
1.1
0.9
6
5
4
0.6
0.2
3.0
2.5 1.3
1.7
pin 1 index
1
2
3
0.26
0.10
0.40
0.25
0.95
1.9
Dimensions in mm
18-03-11
Fig. 18. Package outline TSOP6 (SOT457)
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PMN48XPA
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Nexperia B.V. 2019. All rights reserved
Product data sheet
17 May 2019
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Nexperia
PMN48XPA
20 V, P-channel Trench MOSFET
13. Soldering
3.45
1.95
0.55
(6×)
solder lands
solder resist
0.45
(6×)
0.95
0.95
3.3 2.825
solder paste
occupied area
0.7
Dimensions in mm
(6×)
0.8
(6×)
2.4
sot457_fr
Fig. 19. Reflow soldering footprint for TSOP6 (SOT457)
5.3
1.5
(4×)
solder lands
1.475
5.05
solder resist
occupied area
0.45
(2×)
1.475
Dimensions in mm
preferred transport
direction during soldering
1.45
(6×)
2.85
sot457_fw
Fig. 20. Wave soldering footprint for TSOP6 (SOT457)
©
PMN48XPA
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Nexperia B.V. 2019. All rights reserved
Product data sheet
17 May 2019
11 / 14
Nexperia
PMN48XPA
20 V, P-channel Trench MOSFET
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
20190517
Data sheet status
Change notice
Supersedes
PMN48XPA v.1
Product data sheet
-
-
©
PMN48XPA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2019. All rights reserved
Product data sheet
17 May 2019
12 / 14
Nexperia
PMN48XPA
20 V, P-channel Trench MOSFET
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
15. Legal information
Data sheet status
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Document status Product
Definition
[1][2]
status [3]
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Nexperia product is suitable
and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Nexperia products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Nexperia does not accept any
liability in this respect.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
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terms and conditions with regard to the purchase of Nexperia products by
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data sheet shall define the specification of the product as agreed between
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agreed otherwise in writing. In no event however, shall an agreement be
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specifications and product descriptions, at any time and without notice. This
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Suitability for use in automotive applications — This Nexperia product
has been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted to
be suitable for use in life support, life-critical or safety-critical systems or
©
PMN48XPA
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Nexperia B.V. 2019. All rights reserved
Product data sheet
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13 / 14
Nexperia
PMN48XPA
20 V, P-channel Trench MOSFET
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 5
10. Characteristics............................................................6
11. Test information........................................................10
12. Package outline........................................................ 10
13. Soldering................................................................... 11
14. Revision history........................................................12
15. Legal information......................................................13
© Nexperia B.V. 2019. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 17 May 2019
©
PMN48XPA
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Nexperia B.V. 2019. All rights reserved
Product data sheet
17 May 2019
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