PMEG2010EA [NEXPERIA]
20 V, 1 A low VF Schottky barrier diodeProduction;![PMEG2010EA](http://pdffile.icpdf.com/pdf2/p00368/img/icpdf/PMEG2010EA_2247146_icpdf.jpg)
型号: | PMEG2010EA |
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描述: | 20 V, 1 A low VF Schottky barrier diodeProduction 光电二极管 |
文件: | 总8页 (文件大小:266K) |
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Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
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DISCRETE SEMICONDUCTORS
DATA SHEET
PMEG2010EA
Low VF (MEGA) Schottky barrier
diode
Product data sheet
2004 Feb 06
Supersedes data of 2002 Dec 10
NXP Semiconductors
Product data sheet
Low VF (MEGA) Schottky barrier diode
PMEG2010EA
FEATURES
PINNING
• Forward current: 1 A
PIN
1
DESCRIPTION
• Reverse voltage: 20 V
cathode
• Ultra high-speed switching
• Very low forward voltage
• Very small plastic SMD package.
2
anode
olumns
1
2
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
MGU328
• Protection circuits.
Marking code: E1.
The marking bar indicates the cathode.
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier diode with an integrated guard ring for
stress protection, encapsulated in a SOD323 (SC-76) very
small SMD plastic package.
Fig.1 Simplified outline (SOD323; SC-76) and
symbol.
ORDERING INFORMATION
TYPE
PACKAGE
NUMBER
NAME
DESCRIPTION
plastic surface mounted package; 2 leads
VERSION
PMEG2010EA
−
SOD323
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
IF
continuous reverse voltage
continuous forward current
non-repetitive peak forward current
−
−
−
20
1
V
A
A
IFSM
tp = 8.3 ms half sinewave;
JEDEC method
5
Tstg
Tj
storage temperature
−65
−
+150
125
°C
°C
°C
junction temperature
Tamb
operating ambient temperature
−65
+125
2004 Feb 06
2
NXP Semiconductors
Product data sheet
Low VF (MEGA) Schottky barrier diode
PMEG2010EA
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
see Fig.2; note 1
TYP.
MAX.
UNIT
VF
continuous forward voltage
IF = 10 mA
IF = 100 mA
IF = 1000 mA
see Fig.3; note 1
VR = 5 V
240
270
mV
300
480
350
550
mV
mV
IR
continuous reverse current
diode capacitance
5
10
20
50
25
μA
μA
μA
pF
VR = 8 V
7
VR = 15 V
10
Cd
VR = 5 V; f = 1 MHz; see Fig.4 19
Note
1. Pulsed test: tp = 300 μs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
VALUE
220
UNIT
note 1
note 2
K/W
K/W
180
Notes
1. Device mounted on an FR4 printed-circuit board with Cu clad 10 x 10 mm.
2. Device mounted on an FR4 printed-circuit board with Cu clad 40 x 40 mm.
2004 Feb 06
3
NXP Semiconductors
Product data sheet
Low VF (MEGA) Schottky barrier diode
PMEG2010EA
GRAPHICAL DATA
MHC311
MHC312
3
5
10
10
handbook, halfpage
handbook, halfpage
I
I
R
(μA)
F
(mA)
(1)
4
10
2
10
(2)
(3)
3
10
(1) (2)
(3)
10
2
10
1
10
−1
10
1
0
0
0.2
0.4
0.6
5
10
15
20
25
V
(V)
F
V
(V)
R
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.2 Forward current as a function of forward
voltage; typical values.
Fig.3 Reverse current as a function of reverse
voltage; typical values.
MHC313
80
handbook, halfpage
C
d
(pF)
60
40
20
0
0
5
10
15
20
V
(V)
R
Tamb = 25 °C; f = 1 MHz.
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
2004 Feb 06
4
NXP Semiconductors
Product data sheet
Low VF (MEGA) Schottky barrier diode
PMEG2010EA
PACKAGE OUTLINE
Plastic surface-mounted package; 2 leads
SOD323
A
D
E
X
M
A
H
D
v
Q
1
2
b
p
A
A
1
(1)
c
L
p
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
mm
b
c
D
E
H
L
p
Q
v
A
p
D
max
1.1
0.8
0.40 0.25
0.25 0.10
1.8
1.6
1.35
1.15
2.7
2.3
0.45 0.25
0.15 0.15
0.05
0.2
Note
1. The marking bar indicates the cathode
REFERENCES
JEDEC JEITA
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
03-12-17
06-03-16
SOD323
SC-76
2004 Feb 06
5
NXP Semiconductors
Product data sheet
Low VF (MEGA) Schottky barrier diode
PMEG2010EA
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
2004 Feb 06
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R76/02/pp7
Date of release: 2004 Feb 06
Document order number: 9397 750 12626
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