PMCXB900UE [NEXPERIA]
20 V, complementary N/P-channel Trench MOSFETProduction;型号: | PMCXB900UE |
厂家: | Nexperia |
描述: | 20 V, complementary N/P-channel Trench MOSFETProduction |
文件: | 总20页 (文件大小:789K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PMCXB900UE
20 V, complementary N/P-channel Trench MOSFET
30 June 2015
Product data sheet
1. General description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a
leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic
package using Trench MOSFET technology.
2. Features and benefits
Trench MOSFET technology
•
•
•
•
Very low threshold voltage for portable applications: VGS(th) = 0.7 V
Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
ElectroStatic Discharge (ESD) protection > 1 kV HBM
3. Applications
Relay driver
High-speed line driver
Level shifter
•
•
•
•
Power management in battery-driven portables
4. Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
TR1 (N-channel), Static characteristics
RDSon
drain-source on-state
resistance
VGS = 4.5 V; ID = 600 mA; Tj = 25 °C
-
470
620
mΩ
TR2 (P-channel), Static characteristics
RDSon
drain-source on-state
resistance
VGS = -4.5 V; ID = -500 mA; Tj = 25 °C
-
1.02
1.4
Ω
TR1 (N-channel)
VDS
drain-source voltage
drain current
Tj = 25 °C
-
-
-
-
20
V
ID
VGS = 4.5 V; Tamb = 25 °C
[1]
[1]
600
mA
TR2 (P-channel)
VDS
ID
drain-source voltage
drain current
Tj = 25 °C
-
-
-
-
-20
V
VGS = -4.5 V; Tamb = 25 °C
-500
mA
Nexperia
PMCXB900UE
20 V, complementary N/P-channel Trench MOSFET
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
[1]
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
D2
D1
S1
G1
D2
S2
G2
D1
D1
D2
source TR1
gate TR1
drain TR2
source TR2
gate TR2
drain TR1
drain TR1
drain TR2
1
6
5
4
7
2
G1
3
G2
2
4
8
3
5
S1
S2
6
017aaa262
Transparent top view
7
DFN1010B-6 (SOT1216)
8
5. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PMCXB900UE
DFN1010B-6
DFN1010B-6: plastic thermal enhanced ultra thin small outline
package; no leads; 6 terminals
SOT1216
6. Marking
Table 4.
Marking codes
Type number
Marking code
PMCXB900UE
10 00 00
READING
DIRECTION
MARKING CODE
MARK-FREE AREA
(EXAMPLE)
PIN 1
INDICATION MARK
READING EXAMPLE:
YEAR DATE
CODE
11
01
10
aaa-007665
Fig. 1. DFN1010B-6 (SOT1216) binary marking code description
©
PMCXB900UE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
30 June 2015
2 / 20
Nexperia
PMCXB900UE
20 V, complementary N/P-channel Trench MOSFET
7. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
TR1 (N-channel)
VDS
VGS
ID
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
20
V
-8
-
8
V
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
[1]
[1]
600
400
2.5
265
380
mA
mA
A
-
IDM
Ptot
peak drain current
-
total power dissipation
[2]
[1]
-
mW
mW
-
Tsp = 25 °C
Tamb = 25 °C
Tj = 25 °C
-
4025 mW
TR1 (N-channel), Source-drain diode
IS
source current
[1]
-
400
mA
TR2 (P-channel)
VDS
VGS
ID
drain-source voltage
gate-source voltage
drain current
-
-20
8
V
-8
-
V
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
[1]
[1]
-500
-300
-2
mA
mA
A
-
IDM
Ptot
peak drain current
-
total power dissipation
[2]
[1]
-
265
380
mW
mW
-
Tsp = 25 °C
-
4025 mW
TR2 (P-channel), Source-drain diode
IS
source current
Tamb = 25 °C
[1]
-
-350
mA
Per device
Tj
junction temperature
ambient temperature
storage temperature
-55
-55
-65
150
150
150
°C
°C
°C
Tamb
Tstg
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[1]
©
PMCXB900UE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
30 June 2015
3 / 20
Nexperia
PMCXB900UE
20 V, complementary N/P-channel Trench MOSFET
017aaa123
017aaa124
120
120
P
der
(%)
I
der
(%)
80
80
40
40
0
- 75
0
- 75
- 25
25
75
125
175
- 25
25
75
125
175
T (°C)
j
T (°C)
j
Fig. 2. MOSFET transistor: Normalized total
power dissipation as a function of junction
temperature
Fig. 3. MOSFET transistor: Normalized continuous
drain current as a function of junction
temperature
aaa-008997
10
Limit R
= V /I
DS
I
DSon
D
D
(A)
t
t
t
= 10 µs
= 100 µs
= 1 ms
p
1
p
p
-1
10
10
DC; T = 25 °C
sp
t
t
= 10 ms
p
p
DC; T
= 25 °C;
amb
drain mounting pad 1 cm
2
= 100 ms
-2
-1
2
10
1
10
10
V
(V)
DS
IDM = single pulse
Fig. 4. TR1 (N-channel): safe operating area; junction to ambient; continuous and peak drain currents as a
function of drain-source voltage
©
PMCXB900UE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
30 June 2015
4 / 20
Nexperia
PMCXB900UE
20 V, complementary N/P-channel Trench MOSFET
aaa-006901
-10
I
D
Limit R
= V /I
DS
(A)
DSon
D
t
=
p
10 µs
-1
-1
100 µs
1 ms
-10
DC; T = 25 °C
sp
10 ms
DC; T
= 25 °C;
drain mounting pad 1 cm
amb
2
100 ms
-2
-10
-10
-1
2
-1
-10
-10
V
(V)
DS
IDM = single pulse
Fig. 5. TR2 (P-channel): safe operating area; junction to ambient; continuous and peak drain currents as a
function of drain-source voltage
8. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
TR1 (N-channel)
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
[2]
-
-
410
285
475
330
K/W
K/W
Rth(j-sp)
thermal resistance
from junction to solder
point
-
27
31
K/W
TR2 (P-channel)
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
[2]
-
-
410
285
475
330
K/W
K/W
Rth(j-sp)
thermal resistance
from junction to solder
point
-
27
31
K/W
[1] Device mounted on an FR4 PCB, single-sided copper; tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
©
PMCXB900UE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
30 June 2015
5 / 20
Nexperia
PMCXB900UE
20 V, complementary N/P-channel Trench MOSFET
aaa-006902
3
10
duty cycle = 1
0.75
Z
th(j-a)
(K/W)
0.5
0.33
0.25
0.2
2
10
0.1
0.05
0.02
0.01
0
10
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig. 6. TR1 and TR2: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
aaa-006903
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.5
0.33
2
10
0.25
0.2
0.1
0.05
0.02
0.01
0
10
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 1 cm2
Fig. 7. TR1 and TR2: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
©
PMCXB900UE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
30 June 2015
6 / 20
Nexperia
PMCXB900UE
20 V, complementary N/P-channel Trench MOSFET
9. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
TR1 (N-channel), Static characteristics
V(BR)DSS
drain-source
ID = 250 µA; VGS = 0 V; Tj = 25 °C
20
-
-
V
V
breakdown voltage
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
0.45
0.7
0.95
IDSS
IGSS
drain leakage current
gate leakage current
VDS = 20 V; VGS = 0 V; Tj = 25 °C
VGS = 8 V; VDS = 0 V; Tj = 25 °C
VGS = -8 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; ID = 600 mA; Tj = 25 °C
VGS = 4.5 V; ID = 600 mA; Tj = 150 °C
VGS = 2.5 V; ID = 500 mA; Tj = 25 °C
VGS = 1.8 V; ID = 100 mA; Tj = 25 °C
VGS = 1.5 V; ID = 10 mA; Tj = 25 °C
VGS = 1.2 V; ID = 1 mA; Tj = 25 °C
VDS = 5 V; ID = 600 mA; Tj = 25 °C
-
-
-
-
-
-
-
-
-
-
-
-
-
1
µA
µA
µA
µA
µA
mΩ
-
10
-10
1
-
-
-
-1
RDSon
drain-source on-state
resistance
470
760
620
845
1125
2210
1
620
1000 mΩ
850 mΩ
1300 mΩ
3000 mΩ
-
-
mΩ
S
gfs
transfer conductance
TR1 (N-channel), Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
VDS = 10 V; ID = 600 mA; VGS = 4.5 V;
Tj = 25 °C
-
-
-
-
-
-
0.4
0.1
0.1
21.3
5.4
4.2
0.7
nC
nC
nC
pF
pF
pF
-
-
-
-
-
VDS = 10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
Coss
Crss
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 10 V; ID = 600 mA; VGS = 4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
5.6
9.2
19
-
-
-
-
ns
ns
ns
ns
turn-off delay time
fall time
51
TR1 (N-channel), Source-drain diode characteristics
VSD
source-drain voltage
IS = 360 mA; VGS = 0 V; Tj = 25 °C
-
0.8
1.2
V
©
PMCXB900UE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
30 June 2015
7 / 20
Nexperia
PMCXB900UE
20 V, complementary N/P-channel Trench MOSFET
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
TR2 (P-channel), Static characteristics
V(BR)DSS
drain-source
ID = -250 µA; VGS = 0 V; Tj = 25 °C
-20
-
-
V
V
breakdown voltage
VGSth
gate-source threshold ID = -250 µA; VDS = VGS; Tj = 25 °C
voltage
-0.45 -0.7
-0.95
IDSS
IGSS
drain leakage current
gate leakage current
VDS = -20 V; VGS = 0 V; Tj = 25 °C
VGS = 8 V; VDS = 0 V; Tj = 25 °C
-
-
-
-
-
-
-
-
-
-
-
-
-
-1
10
-10
1
µA
µA
µA
µA
µA
Ω
-
VGS = -8 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; ID = -500 mA; Tj = 25 °C
VGS = -4.5 V; ID = -500 mA; Tj = 150 °C
VGS = -2.5 V; ID = -200 mA; Tj = 25 °C
VGS = -1.8 V; ID = -40 mA; Tj = 25 °C
VGS = -1.5 V; ID = -10 mA; Tj = 25 °C
VGS = -1.2 V; ID = -1 mA; Tj = 25 °C
VDS = -10 V; ID = -500 mA; Tj = 25 °C
-
-
-
-1
1.4
2.1
2.2
3.3
5
RDSon
drain-source on-state
resistance
1.02
1.54
1.27
1.7
2.3
3.5
480
Ω
Ω
Ω
Ω
-
Ω
gfs
transfer conductance
-
mS
TR2 (P-channel), Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
VDS = -10 V; ID = -450 mA;
VGS = -4.5 V; Tj = 25 °C
-
-
-
-
-
-
1.19
0.17
0.1
43
2.1
nC
nC
nC
pF
pF
pF
-
-
-
-
-
VDS = -10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
Coss
Crss
14
reverse transfer
capacitance
8
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = -10 V; ID = -450 mA;
-
-
-
-
2.3
5
-
-
-
-
ns
ns
ns
ns
VGS = -4.5 V; RG(ext) = 6 Ω; Tj = 25 °C
turn-off delay time
fall time
13.5
6
TR2 (P-channel), Source-drain diode characteristics
VSD
source-drain voltage
IS = -115 mA; VGS = 0 V; Tj = 25 °C
-
-0.7
-1.2
V
©
PMCXB900UE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
30 June 2015
8 / 20
Nexperia
PMCXB900UE
20 V, complementary N/P-channel Trench MOSFET
aaa-008998
aaa-008999
-3
2.5
10
4.5 V
I
D
(A)
I
D
(A)
2.0
2.5 V
-4
-5
-6
10
1.5
1.0
0.5
0
min
typ
max
1.8 V
1.5 V
10
10
V
= 1.2 V
GS
0
1
2
3
4
0
0.5
1.0
1.5
V
(V)
V
(V)
GS
DS
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
Fig. 8. TR1: output characteristics; drain current as a Fig. 9. TR1: sub-threshold drain current as a function
function of drain-source voltage; typical values
of gate-source voltage
aaa-009000
aaa-009001
3
3
1.5 V
2 V
R
DSon
(Ω)
R
DSon
(Ω)
1.2 V
1.8 V
2.5 V
2
1
0
2
3 V
1
0
T = 150 °C
j
V
= 4.5 V
GS
T = 25 °C
j
0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
5
I
(A)
V
(V)
GS
D
Tj = 25 °C
ID = 0.6 A
Fig. 10. TR1: drain-source on-state resistance as a
function of drain current; typical values
Fig. 11. TR1: drain-source on-state resistance as a
function of gate-source voltage; typical values
©
PMCXB900UE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
30 June 2015
9 / 20
Nexperia
PMCXB900UE
20 V, complementary N/P-channel Trench MOSFET
aaa-009002
aaa-009003
2.5
2.0
I
D
a
(A)
2.0
1.5
1.5
1.0
0.5
0
1.0
0.5
0
T = 150 °C
j
T = 25 °C
j
0
1
2
3
4
5
-60
0
60
120
180
V
(V)
T (°C)
j
GS
VDS > ID × RDSon
Fig. 13. TR1: normalized drain-source on-state
resistance as a function of junction
temperature; typical values
Fig. 12. TR1: transfer characteristics; drain current as a
function of gate-source voltage; typical values
aaa-009004
aaa-009005
2
1.5
10
V
GS(th)
(V)
C
(pF)
1.0
0.5
0
C
iss
10
max
C
C
oss
typ
rss
min
1
10
-1
2
-60
0
60
120
180
1
10
10
T (°C)
j
V
(V)
DS
ID = 0.25 mA; VDS = VGS
f = 1 MHz; VGS = 0 V
Fig. 15. TR1: input, output and reverse transfer
Fig. 14. TR1: gate-source threshold voltage as a
function of junction temperature
capacitances as a function of drain-source
voltage; typical values
©
PMCXB900UE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
30 June 2015
10 / 20
Nexperia
PMCXB900UE
20 V, complementary N/P-channel Trench MOSFET
aaa-009006
5
V
DS
V
GS
(V)
I
4
3
2
1
0
D
V
GS(pl)
V
GS(th)
GS
V
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
017aaa137
Fig. 17. Gate charge waveform definitions
0
0.1
0.2
0.3
0.4
Q
0.5
(nC)
G
ID = 0.6 A; VDS = 10 V; Tamb = 25 °C
Fig. 16. TR1: gate-source voltage as a function of gate
charge; typical values
aaa-009007
aaa-006904
2.5
-2.0
D
V
= -4.5 V
I
GS
S
(A)
I
(A)
2.0
-3.5 V
-3 V
-1.5
1.5
1.0
0.5
-1.0
-0.5
0.0
-2.5 V
-1.8 V
-1.2 V
T = 150 °C
j
T = 25 °C
j
0
0
0.4
0.8
1.2
1.6
V
2.0
(V)
0
-1
-2
-3
-4
V
(V)
DS
SD
VGS = 0 V
Tj = 25 °C
Fig. 18. TR1: source current as a function of source-
drain voltage; typical values
Fig. 19. TR2: output characteristics; drain current as a
function of drain-source voltage; typical values
©
PMCXB900UE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
30 June 2015
11 / 20
Nexperia
PMCXB900UE
20 V, complementary N/P-channel Trench MOSFET
aaa-006905
aaa-006906
-2
-10
2.0
I
R
(Ω)
D
DSon
-1.8 V
-2.2 V
-2.5 V
(A)
-3
-10
1.5
-3 V
-3.5 V
min
typ
max
-4
-10
1.0
0.5
0.0
V
= -4.5 V
GS
-5
-10
-6
-10
0.0
-0.5
-1.0
-1.5
0.0
-0.5
-1.0
-1.5
-2.0
V
(V)
I (V)
D
GS
Tj = 25 °C; VDS = -5 V
Tj = 25 °C
Fig. 20. TR2: sub-threshold drain current as a function Fig. 21. TR2: drain-source on-state resistance as a
of gate-source voltage
function of drain current; typical values
aaa-006907
aaa-006908
5
-1.00
R
DSon
(Ω)
I
D
(A)
4
T = 25 °C
j
T = 150 °C
j
-0.75
3
2
1
0
-0.50
-0.25
0.00
T = 150 °C
j
T = 25 °C
j
0
-1
-2
-3
-4
-5
0
-1
-2
-3
-4
V
(V)
V
(V)
GS
GS
ID = -0.5 A
VDS > ID × RDSon
Fig. 22. TR2: drain-source on-state resistance as a
function of gate-source voltage; typical values
Fig. 23. TR2: transfer characteristics; drain current as a
function of gate-source voltage; typical values
©
PMCXB900UE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
30 June 2015
12 / 20
Nexperia
PMCXB900UE
20 V, complementary N/P-channel Trench MOSFET
aaa-006909
aaa-006910
1.50
a
-1.5
V
GS(th)
(V)
1.25
1.00
0.75
-1.0
-0.5
0.0
max
typ
min
60
0.50
-60
0
60
120
180
-60
0
120
180
T (°C)
j
T (°C)
j
ID = -0.25 mA; VDS = VGS
Fig. 24. TR2: normalized drain-source on-state
resistance as a function of junction
temperature; typical values
Fig. 25. TR2: gate-source threshold voltage as a
function of junction temperature
aaa-006912
aaa-006911
2
10
-5
V
GS
C
iss
(V)
-4
-3
-2
-1
0
C
(pF)
C
oss
rss
10
C
1
-1
-10
2
0
0.2
0.4
0.6
-1
-10
-10
Q
(nC)
V
(V)
G
DS
ID = -0.45 A; VDS = -10 V; Tamb = 25 °C
f = 1 MHz; VGS = 0 V
Fig. 26. TR2: input, output and reverse transfer
Fig. 27. TR2: gate-source voltage as a function of gate
charge; typical values
capacitances as a function of drain-source
voltage; typical values
©
PMCXB900UE
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Nexperia B.V. 2017. All rights reserved
Product data sheet
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Nexperia
PMCXB900UE
20 V, complementary N/P-channel Trench MOSFET
aaa-006913
-2.0
V
DS
I
S
(A)
I
D
-1.5
V
GS(pl)
V
GS(th)
GS
-1.0
-0.5
0.0
V
Q
Q
GS1
GS2
T = 150 °C
j
T = 25 °C
j
Q
Q
GD
GS
Q
G(tot)
017aaa137
Fig. 28. MOSFET transistor: Gate charge waveform
definitions
0.0
-0.5
-1.0
-1.5
-2.0
V
(V)
SD
VGS = 0 V
Fig. 29. TR2: source current as a function of source-
drain voltage; typical values
10. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 30. Duty cycle definition
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PMCXB900UE
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Nexperia B.V. 2017. All rights reserved
Product data sheet
30 June 2015
14 / 20
Nexperia
PMCXB900UE
20 V, complementary N/P-channel Trench MOSFET
11. Package outline
0.35
0.35
0.15
0.23
1
6
2
5
3
4
0.125
0.205
0.22
0.30
0.95
1.05
0.32
0.40
0.04
max
0.34
0.40
0.275 0.275
1.05
1.15
Dimensions in mm
13-03-05
Fig. 31. Package outline DFN1010B-6 (SOT1216)
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PMCXB900UE
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Nexperia B.V. 2017. All rights reserved
Product data sheet
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Nexperia
PMCXB900UE
20 V, complementary N/P-channel Trench MOSFET
12. Soldering
Footprint information for reflow soldering of DFN1010B-6 package
SOT1216
0.9
0.35
0.35
0.15 0.2 (6x) 0.15
0.25
0.35
1.3 1.2 0.5
0.35
0.6 1.1
0.25
0.3 (6x)
1
1.35
solder land
solder land plus solder paste
occupied area
solder resist
Dimensions in mm
13-03-06
Issue date
sot1216_fr
14-07-28
Fig. 32. Reflow soldering footprint for DFN1010B-6 (SOT1216)
©
PMCXB900UE
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Nexperia B.V. 2017. All rights reserved
Product data sheet
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Nexperia
PMCXB900UE
20 V, complementary N/P-channel Trench MOSFET
13. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMCXB900UE v.2
Modification:
20150630
Product data sheet
-
PMCXB900UE v.1
Change of binary marking code position.
•
20131007 Product data sheet
PMCXB900UE v.1
-
-
©
PMCXB900UE
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Nexperia B.V. 2017. All rights reserved
Product data sheet
30 June 2015
17 / 20
Nexperia
PMCXB900UE
20 V, complementary N/P-channel Trench MOSFET
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
14. Legal information
14.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Right to make changes — Nexperia reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Suitability for use — Nexperia products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia and its suppliers accept no liability for
inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nexperia.com.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
14.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Customers are responsible for the design and operation of their
applications and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the Nexperia product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Nexperia does not accept any liability related to any default,
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local Nexperia
sales office. In case of any inconsistency or conflict with the
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Nexperia
14.3 Disclaimers
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no
responsibility for the content in this document if provided by an information
source outside of Nexperia.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
©
PMCXB900UE
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Nexperia B.V. 2017. All rights reserved
Product data sheet
30 June 2015
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Nexperia
PMCXB900UE
20 V, complementary N/P-channel Trench MOSFET
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Nexperia product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor
tested in accordance with automotive testing or application requirements.
Nexperia accepts no liability for inclusion and/or use of non-
automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without Nexperia’s warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
Nexperia’s specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies Nexperia for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond Nexperia’s
standard warranty and Nexperia’s product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
14.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
©
PMCXB900UE
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Nexperia B.V. 2017. All rights reserved
Product data sheet
30 June 2015
19 / 20
Nexperia
PMCXB900UE
20 V, complementary N/P-channel Trench MOSFET
15. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
Applications ........................................................... 1
Quick reference data ............................................. 1
Ordering information .............................................2
Marking ...................................................................2
Limiting values .......................................................3
Thermal characteristics .........................................5
Characteristics .......................................................7
Test information ...................................................14
Package outline ................................................... 15
Soldering .............................................................. 16
Revision history ...................................................17
3
4
5
6
7
8
9
10
11
12
13
14
Legal information .................................................18
Data sheet status ............................................... 18
Definitions ...........................................................18
Disclaimers .........................................................18
Trademarks ........................................................ 19
14.1
14.2
14.3
14.4
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 30 June 2015
©
PMCXB900UE
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Nexperia B.V. 2017. All rights reserved
Product data sheet
30 June 2015
20 / 20
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