PMCPB5530X [NEXPERIA]
20 V, complementary Trench MOSFETProduction;
| 型号： | PMCPB5530X |
| 厂家： | 
Nexperia |
| 描述： | 20 V, complementary Trench MOSFETProduction 开关 光电二极管 晶体管 |
| 文件： | 总18页 (文件大小：1892K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PMCPB5530X
20 V, complementary Trench MOSFET
Rev. 1 — 26 June 2012
Product data sheet
1. Product profile
1.1 General description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a small
and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic
package using Trench MOSFET technology.
1.2 Features and benefits
Very fast switching
Small and leadless ultra thin SMD
plastic package: 2 x 2 x 0.65 mm
Trench MOSFET technology
Exposed drain pad for excellent
thermal conduction
1.3 Applications
Charging switch for portable devices
DC-to-DC converters
Power management in battery-driven
portables
Hard disc and computing power
Small brushless DC motor drive
management
1.4 Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
TR1 (N-channel), Static characteristics
RDSon
drain-source on-state
resistance
VGS = 4.5 V; ID = 3 A; Tj = 25 °C
-
26
34
mΩ
TR2 (P-channel), Static characteristics
RDSon
drain-source on-state
resistance
VGS = -4.5 V; ID = -3.4 A; Tj = 25 °C
-
55
70
mΩ
TR1 (N-channel)
VDS
VGS
ID
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
20
12
5.3
V
V
A
-12
-
[1]
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
PMCPB5530X
Nexperia
20 V, complementary Trench MOSFET
Table 1.
Symbol
Quick reference data …continued
Parameter
Conditions
Min
Typ
Max
Unit
TR2 (P-channel)
VDS
VGS
ID
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
-20
12
V
V
A
-12
-
[1]
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
-4.5
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2.
2. Pinning information
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
S1
G1
D2
S2
G2
D1
D1
D2
source TR1
gate TR1
drain TR2
source TR2
gate TR2
drain TR1
drain TR1
drain TR2
D1
D2
6
5
4
2
3
7
8
4
5
1
2
3
6
S2 G2
G1 S1
017aaa261
Transparent top view
7
DFN2020-6 (SOT1118)
8
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
SOT1118
PMCPB5530X
DFN2020-6
plastic thermal enhanced ultra thin small outline package;
no leads; 6 terminals
4. Marking
Table 4.
Marking codes
Type number
PMCPB5530X
Marking code
1W
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
TR1 (N-channel)
VDS
VGS
drain-source voltage
gate-source voltage
Tj = 25 °C
-
20
12
V
V
-12
PMCPB5530X
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 26 June 2012
2 of 18
PMCPB5530X
Nexperia
20 V, complementary Trench MOSFET
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
5.3
4
Unit
A
[1]
[1]
[1]
ID
drain current
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
-
-
-
-
-
-
-
A
2.6
12
A
IDM
Ptot
peak drain current
A
[2]
[1]
total power dissipation
490
1170
mW
mW
Tsp = 25 °C
Tamb = 25 °C
Tj = 25 °C
8330 mW
TR1 (N-channel), Source-drain diode
[1]
IS
source current
-
1.2
A
TR2 (P-channel)
VDS
VGS
ID
drain-source voltage
gate-source voltage
drain current
-
-20
V
-12
12
V
[1]
[1]
[1]
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
-
-
-
-
-
-
-
-4.5
-3.4
-2.2
-14
A
A
A
IDM
Ptot
peak drain current
A
[2]
[1]
total power dissipation
490
1170
mW
mW
Tsp = 25 °C
8330 mW
TR2 (P-channel), Source-drain diode
[1]
IS
source current
Tamb = 25 °C
-
-1.2
A
Per device
Tj
junction temperature
ambient temperature
storage temperature
-55
-55
-65
150
150
150
°C
°C
°C
Tamb
Tstg
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint.
PMCPB5530X
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 26 June 2012
3 of 18
PMCPB5530X
Nexperia
20 V, complementary Trench MOSFET
017aaa123
017aaa124
120
120
P
der
I
der
(%)
(%)
80
80
40
40
0
−75
0
−75
−25
25
75
125
175
−25
25
75
125
175
T (°C)
j
T (°C)
j
Fig 1. Normalized total power dissipation as a
function of junction temperature
Fig 2. Normalized continuous drain current as a
function of junction temperature
017aaa637
2
10
I
Limit R
= V /I
DS D
D
DSon
(A)
10
t
p
= 10 μs
t
t
= 100 μs
p
1
DC; T = 25 °C
sp
t
p
= 10 ms
= 100 ms
p
-1
DC; T
= 25 °C;
10
amb
2
drain mounting pad 6 cm
-2
10
10
-1
2
1
10
10
V
(V)
DS
IDM = single pulse
Fig 3. Safe operating area TR1 (N-channel); junction to ambient; continuous and peak drain currents as a
function of drain-source voltage
PMCPB5530X
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 26 June 2012
4 of 18
PMCPB5530X
Nexperia
20 V, complementary Trench MOSFET
017aaa410
2
-10
I
D
Limit R
= V /I
DS D
DSon
(A)
-10
(1)
(2)
-1
-1
(3)
(4)
(5)
-10
(6)
-2
-10
-10
-1
2
-1
-10
-10
V
(V)
DS
IDM = single pulse
(1) tp = 10 µs
(2) tp = 100 µs
(3) DC; Tsp = 25 °C
(4) tp = 10 ms
(5) tp = 100 ms
(6) DC; Tamb = 25 °C; drain mounting pad 6 cm2
Fig 4. Safe operating area TR2 (P-channel); junction to ambient; continuous and peak drain currents as a
function of drain-source voltage
6. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
TR1 (N-channel)
[1]
[2]
[3]
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
-
-
-
-
223
93
256
107
63
K/W
K/W
K/W
K/W
55
Rth(j-sp)
thermal resistance
from junction to solder
point
10
15
TR2 (P-channel)
[1]
[2]
[3]
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
-
-
-
-
223
93
256
107
63
K/W
K/W
K/W
K/W
55
Rth(j-sp)
thermal resistance
from junction to solder
point
10
15
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2, t ≤ 5 s.
PMCPB5530X
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 26 June 2012
5 of 18
PMCPB5530X
Nexperia
20 V, complementary Trench MOSFET
7. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
TR1 (N-channel), Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
20
-
-
V
V
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
0.4
0.65
0.9
IDSS
drain leakage current
VDS = 20 V; VGS = 0 V; Tj = 25 °C
VDS = 20 V; VGS = 0 V; Tj = 150 °C
VGS = 12 V; VDS = 0 V; Tj = 25 °C
VGS = -12 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; ID = 3 A; Tj = 25 °C
VGS = 4.5 V; ID = 3 A; Tj = 150 °C
VGS = 2.5 V; ID = 1.4 A; Tj = 25 °C
VGS = 1.8 V; ID = 1.4 A; Tj = 25 °C
VDS = 5 V; ID = 3 A; Tj = 25 °C
-
-
-
-
-
-
-
-
-
-
1
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
S
-
11
100
100
34
63
46
69
-
IGSS
gate leakage current
-
-
RDSon
drain-source on-state
resistance
26
49
33
50
12
gfs
transfer conductance
TR1 (N-channel), Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
VDS = 10 V; ID = 3 A; VGS = 4.5 V;
Tj = 25 °C
-
-
-
-
-
-
14.4
1.1
1.5
660
87
21.7
nC
nC
nC
pF
pF
pF
-
-
-
-
-
VDS = 10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
Coss
Crss
reverse transfer
capacitance
74
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 10 V; ID = 3 A; VGS = 4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
4
-
-
-
-
ns
ns
ns
ns
15
40
16
turn-off delay time
fall time
TR1 (N-channel), Source-drain diode characteristics
VSD
source-drain voltage
IS = 1.2 A; VGS = 0 V; Tj = 25 °C
-
0.8
-
1.2
-
V
TR2 (P-channel), Static characteristics
V(BR)DSS
VGSth
drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
-20
V
V
gate-source threshold ID = -250 µA; VDS = VGS; Tj = 25 °C
voltage
-0.47 -0.65 -0.9
IDSS
drain leakage current
VDS = -20 V; VGS = 0 V; Tj = 25 °C
VDS = -20 V; VGS = 0 V; Tj = 150 °C
VGS = 12 V; VDS = 0 V; Tj = 25 °C
VGS = -12 V; VDS = 0 V; Tj = 25 °C
-
-
-
-
-
-
-
-
-1
µA
µA
nA
nA
-10
-100
-100
IGSS
gate leakage current
PMCPB5530X
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 26 June 2012
6 of 18
PMCPB5530X
Nexperia
20 V, complementary Trench MOSFET
Table 7.
Symbol
RDSon
Characteristics …continued
Parameter
Conditions
Min
Typ
55
Max
70
99
90
135
-
Unit
mΩ
mΩ
mΩ
mΩ
S
drain-source on-state
resistance
VGS = -4.5 V; ID = -3.4 A; Tj = 25 °C
VGS = -4.5 V; ID = -3.4 A; Tj = 150 °C
VGS = -2.5 V; ID = -3 A; Tj = 25 °C
VGS = -1.8 V; ID = -1.5 A; Tj = 25 °C
VDS = -10 V; ID = -3.4 A; Tj = 25 °C
-
-
-
-
-
78
75
110
15
gfs
transfer conductance
TR2 (P-channel), Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
VDS = -10 V; ID = -3.4 A; VGS = -5 V;
Tj = 25 °C
-
-
-
-
-
-
8.1
1.2
1.5
785
63
12.2
nC
nC
nC
pF
pF
pF
-
-
-
-
-
VDS = -10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
Coss
Crss
reverse transfer
capacitance
53
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = -10 V; ID = -3.4 A; VGS = -5 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
4
-
-
-
-
ns
ns
ns
ns
14
40
16
turn-off delay time
fall time
TR2 (P-channel), Source-drain diode characteristics
VSD
source-drain voltage
IS = -1.2 A; VGS = 0 V; Tj = 25 °C
-
-0.8
-1.2
V
017aaa638
017aaa639
-3
15
10
4.5 V
3.0 V
2.5 V
2.2 V
2.0 V
I
I
D
(A)
D
(A)
-4
-5
-6
10
10
1.8 V
min
typ
max
5
0
10
10
V
= 1.5 V
GS
0
2
4
6
0
0.5
1.0
1.5
V
(V)
V
(V)
GS
DS
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
Fig 5. TR1: Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. TR1: Sub-threshold drain current as a function
of gate-source voltage
PMCPB5530X
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 26 June 2012
7 of 18
PMCPB5530X
Nexperia
20 V, complementary Trench MOSFET
017aaa640
017aaa641
120
120
1.8 V
2 V
R
R
DSon
(mΩ)
DSon
(mΩ)
80
80
2.5 V
3 V
T = 150 °C
j
40
0
40
0
V
= 4.5 V
GS
T = 25 °C
j
0
4
8
12
0
4
8
12
I
D
(A)
V
(V)
GS
Tj = 25 °C
ID = 2 A
Fig 7. TR1: Drain-source on-state resistance as a
function of drain current; typical values
Fig 8. TR1: Drain-source on-state resistance as a
function of gate-source voltage; typical values
017aaa642
017aaa643
12
1.8
I
a
D
(A)
8
4
0
1.4
1.0
0.6
T = 150 °C
j
T = 25 °C
j
0
1
2
3
-60
0
60
120
180
V
(V)
T (°C)
j
GS
VDS > ID × RDSon
Fig 9. TR1: Transfer characteristics: drain current as
a function of gate-source voltage; typical
values
Fig 10. TR1: Normalized drain-source on-state
resistance as a function of junction
temperature; typical values
PMCPB5530X
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 26 June 2012
8 of 18
PMCPB5530X
Nexperia
20 V, complementary Trench MOSFET
017aaa644
017aaa645
3
2
1.5
10
C
iss
C
(pF)
V
GS(th)
(V)
1.0
0.5
0
10
C
C
oss
max
rss
typ
10
min
1
-1
2
-60
0
60
120
180
10
1
10
10
T (°C)
j
V
(V)
DS
ID = 0.25 mA; VDS = VGS
f = 1 MHz; VGS = 0 V
Fig 11. TR1: Gate-source threshold voltage as a
function of junction temperature
Fig 12. TR1: Input, output and reverse transfer
capacitances as a function of drain-source
voltage; typical values
017aaa646
5
V
DS
V
GS
(V)
I
4
3
2
1
0
D
V
GS(pl)
V
GS(th)
GS
V
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
017aaa137
0
2
4
6
8
Q
G
(nC)
ID = 3 A; VDS = 10 V; Tamb = 25 °C
Fig 13. TR1: Gate-source voltage as a function of gate
charge; typical values
Fig 14. Gate charge waveform definitions
PMCPB5530X
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 26 June 2012
9 of 18
PMCPB5530X
Nexperia
20 V, complementary Trench MOSFET
017aaa647
017aaa411
12
-4
-3
-2
-1
0
-4.5 V
-2.5 V
-1.8 V
-1.4 V
I
D
I
S
(A)
(A)
8
4
0
V
= -1.2 V
GS
T = 150 °C
j
T = 25 °C
j
-1.0 V
-2
0
0.4
0.8
1.2
0
-1
-3
V
(V)
V
(V)
DS
SD
VGS = 0 V
Tj = 25 °C
Fig 15. TR1: Source current as a function of
source-drain voltage; typical values
Fig 16. TR2: Output characteristics: drain current as a
function of drain-source voltage; typical values
017aaa412
017aaa413
-3
-4
-5
-10
0.24
R
DSon
(Ω)
-1.2 V
I
D
(A)
0.16
0.08
0
(1)
(2)
(3)
-10
V
= -1.4 V
GS
-1.6 V
-2.5 V
-4.5 V
-3
-10
0
-0.25
-0.50
-0.75
-1.00
V
-1.25
0
-1
-2
-4
(V)
I (A)
D
GS
Tj = 25 °C; VDS = −5 V
(1) minimum values
(2) typical values
Tj = 25 °C
(3) maximum values
Fig 17. TR2: Sub-threshold drain current as a function
of gate-source voltage
Fig 18. TR2: Drain-source on-state resistance as a
function of drain current; typical values
PMCPB5530X
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 26 June 2012
10 of 18
PMCPB5530X
Nexperia
20 V, complementary Trench MOSFET
017aaa414
017aaa415
1.0
-4
-3
-2
-1
0
R
DSon
(Ω)
I
D
(A)
0.8
0.6
0.4
0.2
0
(1)
(2)
(2)
(1)
0
-1
-2
-3
-4
0
-0.5
-1.0
-1.5
-2.0
V
GS
(V)
V
(V)
GS
ID = -1 A
VDS > ID × RDSon
(1) Tj = 25 °C
(1) Tj = 150 °C
(2) Tj = 25 °C
(2) Tj = 150 °C
Fig 19. TR2: Drain-source on-state resistance as a
function of gate-source voltage; typical values
Fig 20. TR2: Transfer characteristics: drain current as
a function of gate-source voltage; typical
values
017aaa416
017aaa417
2.0
-1.5
a
V
GS(th)
(V)
1.5
-1.0
-0.5
0
(1)
1.0
0.5
0
(2)
(3)
-60
0
60
120
180
-60
0
60
120
180
T (°C)
j
T (°C)
j
ID = -0.25 mA; VDS = VGS
(1) maximum values
(2) typical values
(3) minimum values
Fig 21. TR2: Normalized drain-source on-state
resistance as a function of junction
temperature; typical values
Fig 22. TR2: Gate-source threshold voltage as a
function of junction temperature
PMCPB5530X
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 26 June 2012
11 of 18
PMCPB5530X
Nexperia
20 V, complementary Trench MOSFET
017aaa418
017aaa419
4
10
-6
C
(pF)
V
GS
(V)
3
10
-4
-2
0
(1)
2
10
(2)
(3)
10
0
2
-1
-10
-10
0
2
4
6
V
(V)
Q (nC)
G
DS
f = 1 MHz; VGS = 0 V
(1) Ciss
ID = −3.3 A; VDS = −10 V; Tamb = 25 °C
(2) Coss
(3) Crss
Fig 23. TR2: Input, output and reverse transfer
Fig 24. TR2: Gate-source voltage as a function of gate
charge; typical values
capacitances as a function of drain-source
voltage; typical values
017aaa420
-4.0
I
S
(A)
-3.0
-2.0
-1.0
0
(1)
(2)
0
-0.4
-0.8
-1.2
V
(V)
SD
VGS = 0 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
Fig 25. TR2: Source current as a function of source-drain voltage; typical values
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20 V, complementary Trench MOSFET
8. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig 26. Duty cycle definition
9. Package outline
2.1
1.9
0.65
max
1.1
0.9
0.04
max
0.77
0.57
(2×)
3
1
4
6
0.65
(4×)
2.1
1.9
0.54
0.44
(2×)
0.35
0.25
(6×)
0.3
0.2
Dimensions in mm
10-05-31
Fig 27. DFN2020-6 (SOT1118)
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Product data sheet
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Nexperia
20 V, complementary Trench MOSFET
10. Soldering
2.1
0.65
0.49
0.65
0.49
0.3 0.4
(6×) (6×)
solder lands
solder paste
0.875
1.05 1.15
(2×) (2×)
2.25
solder resist
0.875
occupied area
Dimensions in mm
0.35
0.72
(6×)
(2×)
0.45
0.82
(6×)
(2×)
sot1118_fr
Fig 28. Reflow soldering footprint for SOT1118 (DFN2020-6)
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Product data sheet
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Nexperia
20 V, complementary Trench MOSFET
11. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PMCPB5530X v.1
20120626
Product data sheet
-
-
PMCPB5530X
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Nexperia B.V. 2017. All rights reserved
Product data sheet
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20 V, complementary Trench MOSFET
12. Legal information
12.1 Data sheet status
Document status[1] [2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nexperia.com.
Right to make changes — Nexperia reserves the right to make
12.2 Definitions
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Suitability for use in automotive applications — This Nexperia
product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia and its suppliers accept no liability for
inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the Nexperia
product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no
responsibility for the content in this document if provided by an information
source outside of Nexperia.
Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications and
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with theTerms and conditions of commercial sale of Nexperia.
PMCPB5530X
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Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 26 June 2012
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PMCPB5530X
Nexperia
20 V, complementary Trench MOSFET
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Terms and conditions of commercial sale — Nexperia
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from competent authorities.
13. Contact information
For more information, please visit:http://www.nexperia.com
For sales office addresses, please send an email to:salesaddresses@nexperia.com
PMCPB5530X
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Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 26 June 2012
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PMCPB5530X
Nexperia
20 V, complementary Trench MOSFET
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6
Test information. . . . . . . . . . . . . . . . . . . . . . . . .13
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .13
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .15
3
4
5
6
7
8
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . .16
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .16
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .17
12.1
12.2
12.3
12.4
13
Contact information. . . . . . . . . . . . . . . . . . . . . .17
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 26 June 2012
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