PMBT3946VPN [NEXPERIA]
40 V, 200 mA NPN/PNP switching transistorProduction;型号: | PMBT3946VPN |
厂家: | Nexperia |
描述: | 40 V, 200 mA NPN/PNP switching transistorProduction |
文件: | 总12页 (文件大小:264K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PMBT3946VPN
40 V, 200 mA NPN/PNP switching transistor
28 December 2022
Product data sheet
1. General description
NPN/PNP double switching transistor in a SOT666 ultra small and flat lead Surface-Mounted
Device (SMD) plastic package.
NPN/NPN complement: PMBT3904VS
PNP/PNP complement: PMBT3906VS
2. Features and benefits
•
Double general-purpose switching transistor
•
•
Board-space reduction
Ultra small and flat lead SMD plastic package
3. Applications
•
General-purpose switching and amplification
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor; for the PNP transistor with negative polarity
VCEO
collector-emitter
voltage
open base
-
-
-
-
40
V
IC
collector current
DC current gain
DC current gain
200
mA
TR1 (NPN)
hFE
VCE = 1 V; IC = 10 mA; Tamb = 25 °C
VCE = -1 V; IC = -10 mA; Tamb = 25 °C
100
100
180
180
300
300
TR2 (PNP)
hFE
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
E1
Description
emitter TR1
base TR1
Simplified outline
Graphic symbol
C1
B2 E2
6
5
4
2
B1
TR2
3
C2
collector TR2
emitter TR2
base TR2
TR1
E1
4
E2
5
B2
1
2
3
B1 C2
sym019
SOT666
6
C1
collector TR1
Nexperia
PMBT3946VPN
40 V, 200 mA NPN/PNP switching transistor
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PMBT3946VPN
SOT666
plastic, surface-mounted package; 6 leads; 0.5 mm pitch; SOT666
1.6 mm x 1.2 mm x 0.55 mm body
7. Marking
Table 4. Marking codes
Type number
Marking code
ZE
PMBT3946VPN
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
TR1 (NPN)
VCBO
Parameter
Conditions
open emitter
open emitter
Min
Max
60
Unit
V
collector-base voltage
collector-base voltage
-
-
TR2 (PNP)
VCBO
-40
V
Per transistor; for the PNP transistor with negative polarity
VCEO
VEBO
IC
collector-emitter voltage open base
-
-
-
-
-
-
40
V
emitter-base voltage
collector current
open collector
6
V
200
200
100
240
mA
mA
mA
mW
ICM
peak collector current
peak base current
total power dissipation
single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C
IBM
Ptot
[1] [2]
[1] [2]
Per device
Ptot
total power dissipation
junction temperature
ambient temperature
storage temperature
Tamb ≤ 25 °C
-
360
150
150
150
mW
°C
Tj
-
Tamb
Tstg
-55
-65
°C
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
©
PMBT3946VPN
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Nexperia B.V. 2022. All rights reserved
Product data sheet
28 December 2022
2 / 12
Nexperia
PMBT3946VPN
40 V, 200 mA NPN/PNP switching transistor
006aab604
400
tot
P
(mW)
300
200
100
0
- 75
- 25
25
75
125
175
(°C)
T
amb
FR4 PCB, standard footprint
Fig. 1. Per device: Power derating curve
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1] [2]
-
-
-
-
521
100
K/W
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
Per device
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1] [2]
-
-
347
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
006aab605
3
10
duty cycle =
1
Z
th(j-a)
(K/W)
0.75
0.5
0.2
0.33
2
10
0.1
0.05
0.02
10
0.01
0
1
10
- 5
- 4
- 3
- 2
- 1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig. 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
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PMBT3946VPN
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Nexperia B.V. 2022. All rights reserved
Product data sheet
28 December 2022
3 / 12
Nexperia
PMBT3946VPN
40 V, 200 mA NPN/PNP switching transistor
10. Characteristics
Table 7. Characteristics
Symbol
TR1 (NPN)
ICBO
Parameter
Conditions
Min
Typ
Max
Unit
collector-base cut-off
current
VCB = 30 V; IE = 0 A; Tamb = 25 °C
VEB = 6 V; IC = 0 A; Tamb = 25 °C
-
-
-
-
50
50
nA
nA
IEBO
hFE
emitter-base cut-off
current
DC current gain
VCE = 1 V; IC = 0.1 mA; Tamb = 25 °C
VCE = 1 V; IC = 1 mA; Tamb = 25 °C
VCE = 1 V; IC = 10 mA; Tamb = 25 °C
VCE = 1 V; IC = 50 mA; Tamb = 25 °C
60
80
100
60
30
180
180
180
105
50
-
-
300
-
-
VCE = 1 V; IC = 100 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
VCEsat
collector-emitter
saturation voltage
IC = 10 mA; IB = 1 mA; Tamb = 25 °C
IC = 50 mA; IB = 5 mA; Tamb = 25 °C
-
75
200
300
850
950
35
mV
mV
mV
mV
ns
-
120
VBEsat
base-emitter saturation IC = 10 mA; IB = 1 mA; Tamb = 25 °C
voltage
650
750
IC = 50 mA; IB = 5 mA; Tamb = 25 °C
-
-
-
-
-
-
-
-
850
td
delay time
IC = 10 mA; IBon = 1 mA; IBoff = -1 mA;
VCC = 3 V; Tamb = 25 °C
-
-
-
-
-
-
-
tr
rise time
35
ns
ton
ts
turn-on time
storage time
fall time
70
ns
200
50
ns
tf
ns
toff
Cc
turn-off time
collector capacitance
250
4
ns
VCB = 5 V; IE = 0 A; ie = 0 A; f = 1 MHz;
Tamb = 25 °C
pF
Ce
fT
emitter capacitance
transition frequency
noise figure
VEB = 500 mV; IC = 0 A; ic = 0 A;
f = 1 MHz; Tamb = 25 °C
-
-
-
-
8
-
pF
VCE = 20 V; IC = 10 mA; f = 100 MHz;
Tamb = 25 °C
300
-
MHz
dB
NF
VCE = 5 V; IC = 100 µA; RS = 1 kΩ; f =
10 Hz to 15.7 kHz; Tamb = 25 °C
5
TR2 (PNP)
ICBO
collector-base cut-off
current
VCB = -30 V; IE = 0 A; Tamb = 25 °C
VEB = -6 V; IC = 0 A; Tamb = 25 °C
-
-
-
-
-50
-50
nA
nA
IEBO
hFE
emitter-base cut-off
current
DC current gain
VCE = -1 V; IC = -0.1 mA; Tamb = 25 °C
VCE = -1 V; IC = -1 mA; Tamb = 25 °C
VCE = -1 V; IC = -10 mA; Tamb = 25 °C
VCE = -1 V; IC = -50 mA; Tamb = 25 °C
60
80
100
60
30
180
180
180
130
50
-
-
300
-
-
VCE = -1 V; IC = -100 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
VCEsat
collector-emitter
saturation voltage
IC = -10 mA; IB = -1 mA; Tamb = 25 °C
IC = -50 mA; IB = -5 mA; Tamb = 25 °C
-
-
-100
-165
-250
-400
V
V
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PMBT3946VPN
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Nexperia B.V. 2022. All rights reserved
Product data sheet
28 December 2022
4 / 12
Nexperia
PMBT3946VPN
40 V, 200 mA NPN/PNP switching transistor
Symbol
Parameter
Conditions
Min
Typ
Max
-850
-950
35
Unit
V
VBEsat
base-emitter saturation IC = -10 mA; IB = -1 mA; Tamb = 25 °C
voltage
-
-
-
-
-
-
-
-
-
-750
IC = -50 mA; IB = -5 mA; Tamb = 25 °C
-850
V
td
delay time
IC = -10 mA; IBon = -1 mA; IBoff = 1 mA;
VCC = -3 V; Tamb = 25 °C
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
pF
tr
rise time
35
ton
ts
turn-on time
storage time
fall time
70
225
75
tf
toff
Cc
turn-off time
collector capacitance
300
4.5
VCB = -5 V; IE = 0 A; ie = 0 A; f = 1 MHz;
Tamb = 25 °C
Ce
fT
emitter capacitance
transition frequency
noise figure
VEB = -500 mV; IC = 0 mA; ic = 0 A;
f = 1 MHz; Tamb = 25 °C
-
-
-
-
10
-
pF
VCE = -20 V; IC = -10 mA; f = 100 MHz;
Tamb = 25 °C
250
-
MHz
dB
NF
VCE = -5 V; IC = -100 µA; RS = 1 kΩ; f =
10 Hz to 15.7 kHz; Tamb = 25 °C
4
006aab115
006aab116
600
0.20
I
(mA) = 5.0
B
4.5
3.5
2.5
I
C
h
FE
(A)
4.0
3.0
2.0
0.15
400
1.5
1.0
(1)
0.10
0.05
0.0
0.5
(2)
(3)
200
0
10
- 1
2
3
1
10
10
10
0
2
4
6
8
10
I
(mA)
V
(V)
CE
C
VCE = 1 V
Tamb = 25 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 4. TR1 (NPN): Collector current as a function of
collector-emitter voltage; typical values
Fig. 3. TR1 (NPN): DC current gain as a function of
collector current; typical values
©
PMBT3946VPN
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Nexperia B.V. 2022. All rights reserved
Product data sheet
28 December 2022
5 / 12
Nexperia
PMBT3946VPN
40 V, 200 mA NPN/PNP switching transistor
006aab117
006aab118
1.2
1.3
V
BE
(V)
V
BEsat
(V)
(1)
(2)
(1)
(2)
0.8
0.9
0.5
0.1
(3)
(3)
0.4
0
10
- 1
2
3
- 1
2
3
1
10
10
10
10
1
10
10
10
I
(mA)
I (mA)
C
C
VCE = 1 V
IC/IB = 10
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig. 5. TR1 (NPN): Base-emitter voltage as a function
of collector current; typical values
Fig. 6. TR1 (NPN): Base-emitter saturation voltage as a
function of collector current; typical values
006aab119
006aab120
1
400
h
FE
(1)
V
CEsat
(V)
300
(1)
(3)
(2)
- 1
(2)
(3)
10
200
100
0
- 2
10
- 1
2
3
- 1
- 10
2
3
10
1
10
10
10
- 1
- 10
- 10
- 10
I
(mA)
I (mA)
C
C
IC/IB = 10
VCE = -1 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig. 7. TR1 (NPN): Collector-emitter saturation voltage Fig. 8. TR2 (PNP): DC current gain as a function of
as a function of collector current; typical values
collector current; typical values
©
PMBT3946VPN
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Nexperia B.V. 2022. All rights reserved
Product data sheet
28 December 2022
6 / 12
Nexperia
PMBT3946VPN
40 V, 200 mA NPN/PNP switching transistor
006aab121
006aab123
- 0.3
- 1.2
BE
I
(mA) = - 5.0
B
V
- 4.5
- 4.0
- 3.5
- 3.0
(V)
I
C
(A)
- 1.0
- 0.8
- 0.6
- 0.4
- 0.2
- 2.5
- 2.0
(1)
(2)
- 0.2
- 1.5
- 1.0
(3)
- 0.1
- 0.5
0
- 1
- 10
2
3
0
- 2
- 4
- 6
- 8
- 10
(V)
- 1
- 10
- 10
- 10
V
I (mA)
C
CE
Tamb = 25 °C
VCE = -1 V
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig. 9. TR2 (PNP): Collector current as a function of
collector-emitter voltage; typical values
Fig. 10. TR2 (PNP): Base-emitter voltage as a function
of collector current; typical values
006aab124
006aab122
- 1.2
- 1
V
BEsat
(V)
- 1.0
- 0.8
- 0.6
- 0.4
- 0.2
V
CEsat
(V)
(1)
(2)
(1)
- 1
- 10
(2)
(3)
(3)
- 2
- 10
- 1
- 10
2
3
- 1
2
3
- 1
- 10
- 10
- 10
- 10
- 1
- 10
- 10
- 10
I
(mA)
I (mA)
C
C
IC/IB = 10
IC/IB = 10
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig. 11. TR2 (PNP): Base-emitter saturation voltage as a Fig. 12. TR2 (PNP): Collector-emitter saturation voltage
function of collector current; typical values
as a function of collector current; typical values
©
PMBT3946VPN
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Nexperia B.V. 2022. All rights reserved
Product data sheet
28 December 2022
7 / 12
Nexperia
PMBT3946VPN
40 V, 200 mA NPN/PNP switching transistor
11. Test information
V
V
CC
BB
R
B
R
C
V
o
(probe)
450 Ω
(probe)
450 Ω
oscilloscope
oscilloscope
R2
V
DUT
I
R1
mlb826
VI = 5 V; t = 600 μs; tp = 10 μs; tr = tf ≤ 3ns
R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω
VBB = -1.9 V; VCC = 3 V
Oscilloscope: input impedance Zi = 50 Ω
Fig. 13. TR1 (NPN): Test circuit for switching times
V
V
CC
BB
R
B
R
C
V
o
(probe)
450 Ω
(probe)
450 Ω
oscilloscope
oscilloscope
R2
V
I
DUT
R1
mgd624
VI = 5 V; t = 600 μs; tp = 10 μs; tr = tf ≤ 3ns
R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω
VBB = 1.9 V; VCC = -3 V
Oscilloscope: input impedance Zi = 50 Ω
Fig. 14. TR2 (PNP): Test circuit for switching times
12. Package outline
1.7
1.5
0.6
0.5
6
5
4
0.3
0.1
1.7 1.3
1.5 1.1
pin 1 index
1
2
3
0.18
0.08
0.27
0.17
0.5
1
Dimensions in mm
04-11-08
Fig. 15. Package outline SOT666
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PMBT3946VPN
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Nexperia B.V. 2022. All rights reserved
Product data sheet
28 December 2022
8 / 12
Nexperia
PMBT3946VPN
40 V, 200 mA NPN/PNP switching transistor
13. Soldering
2.75
2.45
2.1
1.6
solder lands
0.4
(6×)
0.3
(2×)
0.25
(2×)
placement area
0.538
0.55
(2×)
1.075
1.7
2
solder paste
occupied area
0.325 0.375
(4×) (4×)
Dimensions in mm
1.7
0.45
(4×)
0.6
(2×)
0.5
(4×)
0.65
(2×)
sot666_fr
Fig. 16. Reflow soldering footprint for SOT666
©
PMBT3946VPN
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Product data sheet
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PMBT3946VPN
40 V, 200 mA NPN/PNP switching transistor
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
20221228
Data sheet status
Change notice
Supersedes
PMBT3946VPN v.2
Modifications:
Product data sheet
-
PMBT3946VPN v.1
•
The format of this data sheet has been redesigned to comply with the identity guidelines of
Nexperia.
•
•
•
Legal texts have been adapted to the new company name where appropriate.
Packing information removed
Product(s) changed to non-automotive qualification.
PMBT3946VPN v.1
20090831
Product data sheet
-
-
©
PMBT3946VPN
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
28 December 2022
10 / 12
Nexperia
PMBT3946VPN
40 V, 200 mA NPN/PNP switching transistor
injury, death or severe property or environmental damage. Nexperia and its
suppliers accept no liability for inclusion and/or use of Nexperia products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
15. Legal information
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Data sheet status
Document status Product
Definition
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
[1][2]
status [3]
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
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and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
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liability in this respect.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
Definitions
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
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with the same product type number(s) and title. A short data sheet is
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detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
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data sheet shall define the specification of the product as agreed between
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In the event that customer uses the product for design-in and use in
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customer (a) shall use the product without Nexperia’s warranty of the
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Nexperia’s specifications such use shall be solely at customer’s own risk,
and (c) customer fully indemnifies Nexperia for any liability, damages or failed
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Notwithstanding any damages that customer might incur for any reason
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for the products described herein shall be limited in accordance with the
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Trademarks
Suitability for use — Nexperia products are not designed, authorized or
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©
PMBT3946VPN
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
28 December 2022
11 / 12
Nexperia
PMBT3946VPN
40 V, 200 mA NPN/PNP switching transistor
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................1
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 2
9. Thermal characteristics............................................... 3
10. Characteristics............................................................4
11. Test information..........................................................8
12. Package outline.......................................................... 8
13. Soldering..................................................................... 9
14. Revision history........................................................10
15. Legal information......................................................11
© Nexperia B.V. 2022. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 28 December 2022
©
PMBT3946VPN
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
28 December 2022
12 / 12
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