PMBT2222AMB [NEXPERIA]

40 V, 600 mA NPN switching transistorProduction;


型号：	PMBT2222AMB
厂家：	Nexperia
描述：	40 V, 600 mA NPN switching transistorProduction
文件：	总12页 (文件大小：216K)
中文：	中文翻译
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PMBT2222AMB

40 V, 600 mA NPN switching transistor

21 September 2018

Product data sheet

1. General description

NPN switching transistor in an ultra small DFN1006B-3 (SOT883B) leadless Surface-Mounted

Device (SMD) plastic package.

PNP complement: PMBT2907AMB

2. Features and benefits

•

High current (max. 600 mA)

•

Low voltage (max. 40V)

Leadless ultra small SMD plastic package

Low package height of 0.37 mm

Power dissipation comparable to SOT23

3. Applications

•

Switching and linear applications

Mobile applications

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

I_C

collector current

600

800

300

I_CM

h_FE

peak collector current single pulse; t_p≤ 1 ms

DC current gain

V_CE= 10 V; I_C= 150 mA

V_CE= 10 V; I_C= 500 mA

[1]

100

[1] Pulsed test: t_p≤ 300 μs; δ ≤ 0.02

Nexperia

PMBT2222AMB

40 V, 600 mA NPN switching transistor

5. Pinning information

Table 2. Pinning information

Symbol Description

Simplified outline

Graphic symbol

base

emitter

collector

Transparent

top view

sym021

DFN1006B-3

(SOT883B)

6. Ordering information

Table 3. Ordering information

Type number

Package

Name

Description

Version

PMBT2222AMB

DFN1006B-3

plastic, leadless ultra small plastic package; 3 solder lands; 0.35 SOT883B

mm pitch; 1.0 mm x 0.6 mm x 0.37 mm body

7. Marking

Table 4. Marking codes

Type number

Marking code

PMBT2222AMB

0110 0111

PIN 1 INDICATION

READING DIRECTION

READING EXAMPLE:

0111

1011

MARKING CODE

(EXAMPLE)

READING DIRECTION

006aac673

Fig. 1. DFN1006B-3 (SOT883B) binary marking code description

PMBT2222AMB

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Product data sheet

21 September 2018

2 / 12

Nexperia

PMBT2222AMB

40 V, 600 mA NPN switching transistor

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Conditions

Min

Max

Unit

collector-base voltage

open emitter

collector-emitter voltage open base

emitter-base voltage

collector current

open collector

600

800

200

250

150

°C

I_CM

peak collector current

peak base current

single pulse; t_p≤ 1 ms

T_amb≤ 25 °C

I_BM

P_tot

total power dissipation

junction temperature

ambient temperature

storage temperature

[1]

T_j

T_amb

T_stg

-55

-65

°C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

aaa-019152

300

tot

(mW)

200

100

-75

-25

125

175

T (°C)

FR4 PCB, standard footprint

Fig. 2. Power derating curve DFN1006-3 (SOT883)

PMBT2222AMB

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Product data sheet

21 September 2018

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Nexperia

PMBT2222AMB

40 V, 600 mA NPN switching transistor

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

R_th(j-a)

thermal resistance from in free air

junction to ambient

[1]

500

K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

006aab603

duty cycle =

th(j-a)

(K/W)

0.75

0.33

0.5

0.2

0.1

0.05

0.02

0.01

-5

-4

-3

-2

-1

(s)

FR4 PCB, standard footprint

Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

10. Characteristics

Table 7. Characteristics

T_amb= 25 °C unless otherwise specified

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_(BR)CBO

collector-base

I_C= 100 µA; I_E= 0 A

breakdown voltage

V_(BR)CEO

V_(BR)EBO

I_CBO

collector-emitter

breakdown voltage

I_C= 2 mA; I_B= 0 A

emitter-base

breakdown voltage

I_C= 0 A; I_E= 100 µA

collector-base cut-off

current

V_CB= 60 V; I_E= 0 A

µA

V_CB= 60 V; I_E= 0 A; T_j= 125 °C

V_EB= 5 V; I_C= 0 A

I_EBO

h_FE

emitter-base cut-off

current

DC current gain

V_CE= 10 V; I_C= 100 µA

V_CE= 10 V; I_C= 1 mA

100

V_CE= 10 V; I_C= 10 mA

V_CE= 10 V; I_C= 10 mA; T_amb= -55 °C

V_CE= 10 V; I_C= 150 mA

V_CE= 1 V; I_C= 150 mA

[1]

300

V_CE= 10 V; I_C= 500 mA

PMBT2222AMB

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Product data sheet

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Nexperia

PMBT2222AMB

40 V, 600 mA NPN switching transistor

Symbol

Parameter

Conditions

Min

Typ

Max

300

Unit

V_CEsat

collector-emitter

saturation voltage

I_C= 150 mA; I_B= 15 mA

I_C= 500 mA; I_B= 50 mA

[1]

V_BEsat

base-emitter saturation I_C= 150 mA; I_B= 15 mA

voltage

0.6

1.2

I_C= 500 mA; I_B= 50 mA

t_d

delay time

I_C= 150 mA; I_Bon= 15 mA;

I_Boff= -15 mA

200

260

t_r

rise time

t_on

t_s

turn-on time

storage time

fall time

t_f

t_off

C_c

C_e

turn-off time

collector capacitance

emitter capacitance

V_CB= 10 V; I_E= 0 A; i_e= 0 A; f = 1 MHz

V_EB= 500 mV; I_C= 0 A; i_c= 0 A;

f = 1 MHz

f_T

transition frequency

V_CE= 20 V; I_C= 20 mA; f = 100 MHz

[1]

340

MHz

[1] Pulsed test: t_p≤ 300 μs; δ ≤ 0.02

900

aaa-017357

aaa-017359

0.9

= 13 mA

11.7 mA

10.4 mA

(A)

9.1 mA

7.8 mA

5.2 mA

6.5 mA

600

0.6

3.9 mA

2.6 mA

(1)

(2)

300

0.3

0.0

1.3 mA

(3)

-1

(mA)

(V)

V_CE= 10 V

T_amb= 25 °C

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

Fig. 5. Collector current as a function of collector-

emitter voltage; typical values

Fig. 4. DC current gain as a function of collector

current; typical values

PMBT2222AMB

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Product data sheet

21 September 2018

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Nexperia

PMBT2222AMB

40 V, 600 mA NPN switching transistor

aaa-017361

aaa-017362

1.0

1.2

(V)

BEsat

(V)

(1)

(2)

0.8

1.0

0.8

0.6

0.4

0.2

(1)

(2)

0.6

0.4

0.2

0.0

(3)

-1

(mA)

I (mA)

V_CE= 10 V

I_C/I_B= 10

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(3) T_amb= 150 °C

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(3) T_amb= 150 °C

Fig. 6. Base-emitter voltage as a function of collector Fig. 7. Base-emitter saturation voltage as a function of

current; typical values

collector current; typical values

aaa-017363

aaa-028776

CEsat

(V)

CEsat

(V)

(1)

(2)

(1)

(2)

-1

(3)

(4)

(3)

-2

-1

(mA)

I (mA)

I_C/I_B= 20

T_amb= 25 °C

(1) IC/IB = 100

(2) IC/IB = 50

(3) IC/IB = 20

(4) IC/IB = 10

(1) T_amb= 150 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

Fig. 8. Collector-emitter saturation voltage as a

function of collector current; typical values

Fig. 9. Collector-emitter saturation voltage as a

function of collector current; typical values

PMBT2222AMB

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Product data sheet

21 September 2018

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Nexperia

PMBT2222AMB

40 V, 600 mA NPN switching transistor

11. Test information

input pulse

90 %

(idealized waveform)

(100 %)

Bon

10 %

Boff

output pulse

(idealized waveform)

90 %

(100 %)

10 %

off

006aaa003

Fig. 10. Transistor switching time definition

(probe)

450 Ω

(probe)

oscilloscope

450 Ω

oscilloscope

DUT

mlb826

Fig. 11. Test circuit for switching times

PMBT2222AMB

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Product data sheet

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Nexperia

PMBT2222AMB

40 V, 600 mA NPN switching transistor

12. Package outline

Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm

SOT883B

L (2x)

b (2x)

0.5

1 mm

scale

Dimensions

Unit

(1)

max 0.40 0.04 0.20 0.55 0.65 1.05

0.30 0.30

0.25 0.25

0.22 0.22

nom 0.37

min 0.34

0.15 0.50 0.60 1.00

0.12 0.47 0.55 0.95

0.35 0.65

Note

1. Including plating thickness

sot883b_po

Issue date

References

Outline

version

European

projection

IEC

JEDEC

JEITA

11-11-02

12-01-03

SOT883B

Fig. 12. Package outline DFN1006B-3 (SOT883B)

PMBT2222AMB

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Product data sheet

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Nexperia

PMBT2222AMB

40 V, 600 mA NPN switching transistor

13. Soldering

Footprint information for reflow soldering

SOT883B

1.3

0.7

R0.05 (8x)

0.9

0.7

0.6

0.25

(2x)

0.3

(2x)

0.3

0.4

(2x)

solder land

solder land plus solder paste

solder paste deposit

occupied area

solder resist

Dimensions in mm

sot883b_fr

Fig. 13. Reflow soldering footprint for DFN1006B-3 (SOT883B)

PMBT2222AMB

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Product data sheet

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Nexperia

PMBT2222AMB

40 V, 600 mA NPN switching transistor

14. Revision history

Table 8. Revision history

Data sheet ID

Release date

20180921

Data sheet status

Change notice

Supersedes

PMBT2222AMB v.1

Product data sheet

PMBT2222AMB

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Product data sheet

21 September 2018

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Nexperia

PMBT2222AMB

40 V, 600 mA NPN switching transistor

injury, death or severe property or environmental damage. Nexperia and its

suppliers accept no liability for inclusion and/or use of Nexperia products in

such equipment or applications and therefore such inclusion and/or use is at

the customer’s own risk.

15. Legal information

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Data sheet status

Document status Product

Definition

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no representation

or warranty that such applications will be suitable for the specified use

without further testing or modification.

[1][2]

status [3]

Objective [short]

data sheet

Development

This document contains data from

the objective specification for

product development.

Customers are responsible for the design and operation of their applications

and products using Nexperia products, and Nexperia accepts no liability for

any assistance with applications or customer product design. It is customer’s

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and fit for the customer’s applications and products planned, as well as

for the planned application and use of customer’s third party customer(s).

Customers should provide appropriate design and operating safeguards to

minimize the risks associated with their applications and products.

Preliminary [short]

data sheet

Qualification

Production

This document contains data from

the preliminary specification.

Product [short]

data sheet

This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

Nexperia does not accept any liability related to any default, damage, costs

or problem which is based on any weakness or default in the customer’s

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the internet at https://www.nexperia.com.

Definitions

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

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PMBT2222AMB

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Product data sheet

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Nexperia

PMBT2222AMB

40 V, 600 mA NPN switching transistor

Contents

1. General description......................................................1

2. Features and benefits.................................................. 1

3. Applications.................................................................. 1

4. Quick reference data....................................................1

5. Pinning information......................................................2

6. Ordering information....................................................2

7. Marking..........................................................................2

8. Limiting values............................................................. 3

9. Thermal characteristics............................................... 4

10. Characteristics............................................................4

11. Test information..........................................................7

12. Package outline.......................................................... 8

13. Soldering..................................................................... 9

14. Revision history........................................................10

15. Legal information......................................................11

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 21 September 2018

PMBT2222AMB

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Product data sheet

21 September 2018

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PMBT2222AMB [NEXPERIA]

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