PHP18NQ10T [NEXPERIA]
N-channel TrenchMOS standard level FETProduction;
| 型号： | PHP18NQ10T |
| 厂家： | 
Nexperia |
| 描述： | N-channel TrenchMOS standard level FETProduction 局域网 开关 脉冲 晶体管 |
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| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PHP18NQ10T
N-channel TrenchMOS standard level FET
Rev. 02 — 16 December 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Higher operating power due to low
Suitable for high frequency
applications due to fast switching
characteristics
thermal resistance
Low conduction losses due to low
on-state resistance
1.3 Applications
DC-to-DC converters
Switched-mode power supplies
1.4 Quick reference data
Table 1.
Symbol
VDS
Quick reference data
Parameter
Conditions
Min Typ Max Unit
drain-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
Tmb = 25 °C; VGS = 10 V
Tmb = 25 °C
-
-
-
-
-
-
100
18
V
ID
A
Ptot
total power dissipation
79
W
Static characteristics
RDSon drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
VGS = 10 V; ID = 9 A;
Tj = 25 °C
-
-
80
8
90
-
mΩ
VGS = 10 V; ID = 18 A;
VDS = 80 V; Tj = 25 °C
nC
PHP18NQ10T
Nexperia
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
G
D
S
D
gate
mb
D
S
2
drain
3
source
G
mb
mounting base; connected to drain
mbb076
1
2 3
SOT78 (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PHP18NQ10T
TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
PHP18NQ10T
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 02 — 16 December 2010
2 of 13
PHP18NQ10T
Nexperia
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
100
100
20
Unit
V
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
-
VDGR
VGS
-
V
-20
V
ID
VGS = 10 V; Tmb = 100 °C
VGS = 10 V; Tmb = 25 °C
pulsed; Tmb = 25 °C
Tmb = 25 °C
-
13
A
-
18
A
IDM
Ptot
Tstg
Tj
peak drain current
-
72
A
total power dissipation
storage temperature
junction temperature
-
79
W
°C
°C
-55
-55
175
175
Source-drain diode
IS
source current
peak source current
Tmb = 25 °C
-
-
18
72
A
A
ISM
pulsed; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
VGS = 10 V; Tj(init) = 25 °C; ID = 11 A;
Vsup ≤ 25 V; unclamped; tp = 100 µs;
RGS = 50 Ω
-
-
70
18
mJ
A
avalanche energy
IAS
non-repetitive avalanche current
Vsup ≤ 25 V; VGS = 10 V; Tj(init) = 25 °C;
RGS = 50 Ω; unclamped
003aae629
003aae630
100
100
P
D
I
D
(%)
80
(%)
80
60
40
20
0
60
40
20
0
0
50
100
150
200
0
50
100
150
200
T
mb
(°C)
T
mb
(°C)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
Fig 2. Normalized continuous drain current as a
function of mounting base temperature
PHP18NQ10T
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 02 — 16 December 2010
3 of 13
PHP18NQ10T
Nexperia
N-channel TrenchMOS standard level FET
003aae631
003aae643
2
2
10
10
R
DS(on)
= V / I
DS D
I
I
AS
DM
(A)
(A)
t
p
= 10 μs
10
10
25 °C
100 μs
D.C.
1 ms
10 ms
100 ms
T prior to avalanche = 150 °C
j
1
1
−1
−1
10
10
10
2
3
−3
−2
−1
10
1
10
10
10
10
1
10
V
DS
(V)
t
AV
(ms)
Tmb = 25 °C; IDM is single pulse
unclamped inductive load
Fig 3. Safe operating area; continuous and peak drain
currents as a function of drain-source voltage
Fig 4. Single-shot avalanche rating; avalanche
current as a function of avalanche period
PHP18NQ10T
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 02 — 16 December 2010
4 of 13
PHP18NQ10T
Nexperia
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from junction to mounting
base
-
-
1.9
K/W
Rth(j-a)
thermal resistance from junction to ambient
in free air
-
60
-
K/W
003aae632
10
Z
th(j-mb)
(K/W)
D = 0.5
1
0.2
0.1
t
p
P
δ =
T
0.05
0.02
−1
10
10
t
t
single pulse
p
T
−2
−6
−5
−4
−3
−2
−1
10
10
10
10
10
10
1
t
p
(s)
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
PHP18NQ10T
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 02 — 16 December 2010
5 of 13
PHP18NQ10T
Nexperia
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 175 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C
VDS = 100 V; VGS = 0 V; Tj = 175 °C
VDS = 100 V; VGS = 0 V; Tj = 25 °C
VGS = 10 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 9 A; Tj = 175 °C
VGS = 10 V; ID = 9 A; Tj = 25 °C
89
-
-
V
voltage
100
-
-
V
VGS(th)
gate-source threshold
voltage
-
-
6
V
1
2
-
-
-
V
3
4
V
IDSS
drain leakage current
gate leakage current
-
500
10
100
100
243
90
µA
µA
nA
nA
mΩ
mΩ
-
0.05
10
10
-
IGSS
-
-
RDSon
drain-source on-state
resistance
-
-
80
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
td(on)
tr
total gate charge
ID = 18 A; VDS = 80 V; VGS = 10 V;
Tj = 25 °C
-
-
-
-
-
-
-
-
-
-
-
21
4
-
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
pF
pF
pF
ns
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
8
VDS = 25 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C
633
103
61
6
VDS = 50 V; RL = 2.7 Ω; VGS = 10 V;
RG(ext) = 5.6 Ω; Tj = 25 °C
36
18
12
4.5
ns
td(off)
tf
turn-off delay time
fall time
ns
ns
LD
internal drain inductance
measured from drain lead to centre of
die ; Tj = 25 °C
nH
measured from tab to centre of die ;
Tj = 25 °C
-
-
3.5
7.5
-
-
nH
nH
LS
internal source inductance
measured from source lead to source
bond pad ; Tj = 25 °C
Source-drain diode
VSD
trr
source-drain voltage
IS = 18 A; VGS = 0 V; Tj = 25 °C
-
-
-
0.92
55
1.2
V
reverse recovery time
recovered charge
IS = 18 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 25 V; Tj = 25 °C
-
-
ns
nC
Qr
135
PHP18NQ10T
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 02 — 16 December 2010
6 of 13
PHP18NQ10T
Nexperia
N-channel TrenchMOS standard level FET
003aae633
003aae634
20
0.20
V
GS
= 10 V
4.6
4.8
5
5.4
I
R
D
DS(on)
(Ω)
0.16
8 V
(A)
16
5.2
6 V
6
12
8
0.12
0.08
0.04
0
5.4 V
8
5.2 V
5 V
V
(V) = 10
GS
4
4.8 V
4.4 V
4.6 V
0
0
0.4
0.8
1.2
1.6
2.0
(V)
0
4
8
12
16
20
V
I (A)
D
DS
Tj = 25 °C
Tj = 25 °C
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
003aae635
003aae636
20
14
g
fs
I
D
(S)
T = 25 °C
j
(A)
16
12
10
8
T = 175 °C
j
12
8
T = 175 °C
j
6
T = 25 °C
j
4
4
2
0
0
0
2
4
6
8
10
(V)
0
4
8
12
16
20
V
GS
I (A)
D
VDS > ID x RDSon
VDS > ID x RDSon
Fig 8. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 9. Forward transconductance as a function of
drain current; typical values
003aae637
003aae638
2.9
4.5
V
GS(th)
(V)
maximum
R
DS(on)
(Ω)
3.5
2.5
1.5
0.5
2.1
1.3
0.5
typical
minimum
−60
20
100
180
−60
20
100
180
T (°C)
j
T (°C)
j
ID = 1 mA; VDS = VGS
Fig 10. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 11. Gate-source threshold voltage as a function of
junction temperature
PHP18NQ10T
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 02 — 16 December 2010
7 of 13
PHP18NQ10T
Nexperia
N-channel TrenchMOS standard level FET
003aae639
003aae640
−1
4
3
2
10
10
I
D
C
(pF)
(A)
−2
−3
−4
−5
−6
10
10
10
10
10
10
C
iss
minimum
typical
maximum
C
oss
10
C
rss
10
10
−1
2
0
1
2
3
4
5
1
10
10
V
GS
(V)
V
(V)
DS
Tj = 25 °C; VDS = VGS
VGS = 0 V; f = 1 MHz
Fig 12. Sub-threshold drain current as a function of
gate-source voltage
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
003aae641
003aae642
16
20
I
F
V
(V)
GS
(A)
16
12
12
8
V
= 20 V
V
= 80 V
T = 175 °C
T = 25 °C
j
DD
DD
j
8
4
0
4
0
0
10
20
30
0
0.4
0.8
1.2
Q
(nC)
V
(V)
SDS
G
Tj = 25 °C; ID = 18 A
VGS = 0 V
Fig 14. Gate-source voltage as a function of gate
charge; typical values
Fig 15. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
PHP18NQ10T
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 02 — 16 December 2010
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Nexperia
N-channel TrenchMOS standard level FET
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
p
A
A
1
q
mounting
D
1
base
D
(1)
(1)
L
1
L
2
Q
(2)
b
1
L
(3×)
(2)
b
2
(2×)
1
2
3
b(3×)
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
L
2
(2)
(2)
(1)
1
UNIT
mm
A
A
b
b
b
c
D
D
1
E
e
L
L
p
q
Q
1
1
2
max.
4.7
4.1
1.40
1.25
0.9
0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
15.0 3.30
12.8 2.79
3.8
3.5
3.0
2.7
2.6
2.2
2.54
3.0
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
08-04-23
08-06-13
SOT78
SC-46
3-lead TO-220AB
Fig 16. Package outline SOT78 (TO-220AB)
PHP18NQ10T
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 02 — 16 December 2010
9 of 13
PHP18NQ10T
Nexperia
N-channel TrenchMOS standard level FET
8. Revision history
Table 7.
Revision history
Document ID
PHP18NQ10T v.2
Modifications:
Release date Data sheet status
20101216 Product data sheet
Change notice Supersedes
-
PHB_PHD_PHP18NQ10T v.1
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Type number PHP18NQ10T separated from data sheet PHB_PHD_PHP18NQ10T v.1.
PHB_PHD_PHP18NQ10T v.1 19990801
Product specification
-
-
PHP18NQ10T
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 02 — 16 December 2010
10 of 13
PHP18NQ10T
Nexperia
N-channel TrenchMOS standard level FET
9. Legal information
9.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nexperia.com.
Suitability for use — Nexperia products are not designed,
9.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia accepts no liability for inclusion and/or use of
Nexperia products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the Nexperia
product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
9.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications and
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
Right to make changes — Nexperia reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Terms and conditions of commercial sale — Nexperia
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
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Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 02 — 16 December 2010
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N-channel TrenchMOS standard level FET
agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
Nexperia’s specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies Nexperia for any
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond Nexperia’s
standard warranty and Nexperia’s product specifications.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Nexperia product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. Nexperia
accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Nexperia’s warranty of the
10. Contact information
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
PHP18NQ10T
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Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 02 — 16 December 2010
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N-channel TrenchMOS standard level FET
11. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .10
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . .11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12
9.1
9.2
9.3
9.4
10
Contact information. . . . . . . . . . . . . . . . . . . . . .12
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 16 December 2010
相关型号：
PHP191NQ06LT
Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology
NXP
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