PH2520U [NEXPERIA]

N-channel TrenchMOS ultra low level FETProduction;


型号：	PH2520U
厂家：	Nexperia
描述：	N-channel TrenchMOS ultra low level FETProduction
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中文：	中文翻译
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PH2520U

N-channel TrenchMOS ultra low level FET

Rev. 03 — 2 March 2009

Product data sheet

1. Product profile

1.1 General description

Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product is designed and qualified for use in

computing, communications, consumer and industrial applications only.

1.2 Features and benefits

Higher operating power due to low

Low conduction losses due to low

thermal resistance

on-state resistance

Interfaces directly with low voltage

gate drivers

1.3 Applications

DC-to-DC convertors

Notebook computers

Portable equipment

Switched-mode power supplies

1.4 Quick reference data

Table 1.

Quick reference

Symbol Parameter

Conditions

drain-source voltage T_j≥ 25 °C; T_j≤ 150 °C

Min

Typ

Max Unit

V_DS

I_D

drain current

T_mb= 25 °C; V_GS= 4.5 V;

see Figure 1; see Figure 3

100

P_tot

total power

dissipation

T_mb= 25 °C; see Figure 2

62.5

Dynamic characteristics

Q_GDgate-drain charge

V_GS= 4.5 V; I_D= 50 A;

V_DS= 10 V; T_j= 25 °C;

see Figure 11; see Figure 12

Static characteristics

R_DSon

drain-source

on-state resistance

V_GS= 4.5 V; I_D= 25 A;

T_j= 25 °C; see Figure 9;

see Figure 10

2.1

2.7

mΩ

PH2520U

Nexperia

N-channel TrenchMOS ultra low level FET

2. Pinning information

Table 2.

Pinning information

Symbol Description

Simplified outline

Graphic symbol

source

gate

mbb076

mounting base; connected to

drain

2 3 4

SOT669

(LFPAK)

3. Ordering information

Table 3.

Ordering information

Type number

Package

Name

Description

plastic single-ended surface-mounted package (LFPAK); 4 leads

Version

PH2520U

LFPAK

SOT669

4. Limiting values

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_DS

Parameter

Conditions

Min

Max

Unit

drain-source voltage

drain-gate voltage

gate-source voltage

drain current

T_j≥ 25 °C; T_j≤ 150 °C

T_j≥ 25 °C; T_j≤ 150 °C; R_GS= 20 kΩ

V_DGR

V_GS

-10

I_D

V_GS= 4.5 V; T_mb= 100 °C; see Figure 1

V_GS= 4.5 V; T_mb= 25 °C; see Figure 1;

see Figure 3

100

I_DM

P_tot

T_stg

T_j

peak drain current

t_p≤ 10 µs; pulsed; T_mb= 25 °C; see Figure 3

300

62.5

150

total power dissipation T_mb= 25 °C; see Figure 2

storage temperature

°C

-55

junction temperature

Source-drain diode

I_S

source current

peak source current

T_mb= 25 °C

I_SM

t_p≤ 10 µs; pulsed; T_mb= 25 °C

150

Avalanche ruggedness

E_DS(AL)S

non-repetitive

V_GS= 10 V; T_j= 25 °C; I_D= 70.7 A; R_GS= 50 Ω;

250

drain-source avalanche V_sup≤ 20 V; t_p= 0.1 ms; unclamped

energy

PH2520U_3

Product data sheet

Rev. 03 — 2 March 2009

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PH2520U

Nexperia

N-channel TrenchMOS ultra low level FET

003aab131

03aa15

120

I_der

der

(%)

100

150

200

100

150

200

_mb(°C)

(°C)

Fig 1. Normalized continuous drain current as a

function of mounting base temperature

Fig 2. Normalized total power dissipation as a

function of mounting base temperature

003aaa345

10³

I_D

(A)

Limit R_DSon= V_DS/I_D

10²

t_p= 100 μs

1 ms

10 ms

100 ms

1 s

10^-1

10²

V_DS(V)

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

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Product data sheet

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N-channel TrenchMOS ultra low level FET

5. Thermal characteristics

Table 5.

Symbol

R_th(j-mb)

Thermal characteristics

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance from see Figure 4

junction to mounting

base

K/W

003aaa346

Z_th(j-mb)

(K/W)

δ = 0.5

t_p

δ =

0.2

0.1

0.05

single pulse

0.02

t_p

10^-1

10^-4

10^-3

10^-2

10^-1

10²

t_p(s)

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

PH2520U_3

Product data sheet

Rev. 03 — 2 March 2009

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Nexperia

N-channel TrenchMOS ultra low level FET

6. Characteristics

Table 6.

Symbol

Characteristics

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V_(BR)DSS

drain-source

breakdown voltage

I_D= 250 µA; V_GS= 0 V; T_j= -55 °C

I_D= 250 µA; V_GS= 0 V; T_j= 25 °C

V_GS(th)

gate-source threshold I_D= 1 mA; V_DS= V_GS; T_j= -55 °C;

1.2

voltage

see Figure 7; see Figure 8

I_D= 1 mA; V_DS= V_GS; T_j= 150 °C;

see Figure 7; see Figure 8

0.25

0.45

I_D= 1 mA; V_DS= V_GS; T_j= 25 °C;

see Figure 7; see Figure 8

0.7

0.95

I_DSS

drain leakage current

gate leakage current

V_DS= 20 V; V_GS= 0 V; T_j= 25 °C

V_DS= 20 V; V_GS= 0 V; T_j= 150 °C

V_GS= 10 V; V_DS= 0 V; T_j= 25 °C

V_GS= -10 V; V_DS= 0 V; T_j= 25 °C

0.06

µA

mΩ

500

100

3.9

I_GSS

2.8

R_DSon

drain-source on-state

resistance

V_GS= 2.5 V; I_D= 25 A; T_j= 25 °C;

see Figure 9; see Figure 10

V_GS= 4.5 V; I_D= 25 A; T_j= 150 °C;

see Figure 9; see Figure 10

3.3

4.3

2.7

mΩ

Ω

V_GS= 4.5 V; I_D= 25 A; T_j= 25 °C;

2.1

see Figure 9; see Figure 10

R_G

internal gate resistance f = 1 MHz; T_j= 25 °C

(AC)

1.65

Dynamic characteristics

Q_G(tot)

Q_GS

total gate charge

gate-source charge

gate-drain charge

I_D= 50 A; V_DS= 10 V; V_GS= 4.5 V;

T_j= 25 °C; see Figure 11;

see Figure 12

2.2

Q_GD

V_GS(pl)

gate-source plateau

voltage

I_D= 50 A; V_DS= 10 V; T_j= 25 °C;

see Figure 11; see Figure 12

C_iss

C_oss

C_rss

input capacitance

output capacitance

V_DS= 10 V; V_GS= 0 V; f = 1 MHz;

T_j= 25 °C; see Figure 13

5850

1190

831

reverse transfer

capacitance

t_d(on)

t_r

t_d(off)

t_f

turn-on delay time

rise time

V_DS= 10 V; R_L= 1 Ω; V_GS= 4.5 V;

R_G(ext)= 4.7 Ω; T_j= 25 °C

240

318

234

turn-off delay time

fall time

Source-drain diode

V_SDsource-drain voltage

I_S= 25 A; V_GS= 0 V; T_j= 25 °C;

see Figure 14

0.85

1.2

t_rr

reverse recovery time

I_S= 20 A; dI_S/dt = -100 A/µs; V_GS= 0 V;

V_DS= 20 V; T_j= 25 °C

PH2520U_3

Product data sheet

Rev. 03 — 2 March 2009

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PH2520U

Nexperia

N-channel TrenchMOS ultra low level FET

003aaa347

003aaa348

I_D

4.5

2.5

1.8

1.6

I_D

(A)

1.4

T_j= 150 °C

1.3

25 °C

V_GS(V) = 1.2

0.2

0.4

0.6

0.5

1.5

_GS(V)

_DS(V)

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values

Fig 6. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

03aj65

03aj64

−3

1.2

GS(th)

(V)

(A)

0.9

0.6

0.3

max

typ

−4

−5

−6

min

typ

max

min

−60

120

180

0.2

0.4

0.6

0.8

(V)

T (°C)

Fig 7. Gate-source threshold voltage as a function of

junction temperature

Fig 8. Sub-threshold drain current as a function of

gate-source voltage

PH2520U_3

Product data sheet

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Nexperia

N-channel TrenchMOS ultra low level FET

003aaa349

03af18

R_DSon

(mΩ)

1.3

1.4

V_GS(V) =

1.5

1.6

1.8

2.5

4.5

0.5

-60

120

180

I_D(A)

T_j(°C)

Fig 9. Drain-source on-state resistance as a function

of drain current; typical values

Fig 10. Normalized drain-source on-state resistance

factor as a function of junction temperature

003aaa352

V_GS

(V)

GS(pl)

GS(th)

GS1

GS2

G(tot)

003aaa508

Fig 12. Gate charge waveform definitions

100

_G(nC)

Fig 11. Gate-source voltage as a function of gate

charge; typical values

PH2520U_3

Product data sheet

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PH2520U

Nexperia

N-channel TrenchMOS ultra low level FET

003aaa350

003aaa351

10⁵

I_S

(A)

(pF)

10⁴

C_iss

150 °C

T_j= 25 °C

10³

C_oss

C_rss

10²

10^-1

10²

0.2

0.4

0.6

0.8

V_DS(V)

V_SD(V)

Fig 14. Source current as a function of source-drain

voltage; typical values

Fig 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

PH2520U_3

Product data sheet

Rev. 03 — 2 March 2009

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PH2520U

Nexperia

N-channel TrenchMOS ultra low level FET

7. Package outline

Plastic single-ended surface-mounted package (LFPAK); 4 leads

SOT669

mounting

base

1/2 e

(A )

detail X

2.5

5 mm

scale

DIMENSIONS (mm are the original dimensions)

(1)

UNIT

max

1.20 0.15 1.10

1.01 0.00 0.95

0.50 4.41 2.2 0.9 0.25 0.30 4.10

0.35 3.62 2.0 0.7 0.19 0.24 3.80

5.0 3.3

4.8 3.1

6.2 0.85 1.3 1.3

5.8 0.40 0.8 0.8

8°

0°

0.25

4.20

1.27

0.25 0.1

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

REFERENCES

OUTLINE

EUROPEAN

PROJECTION

ISSUE DATE

VERSION

IEC

JEDEC

JEITA

04-10-13

06-03-16

SOT669

MO-235

Fig 15. Package outline SOT669 (LFPAK)

PH2520U_3

Product data sheet

Rev. 03 — 2 March 2009

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PH2520U

Nexperia

N-channel TrenchMOS ultra low level FET

8. Revision history

Table 7.

Revision history

Document ID

PH2520U_3

Modifications:

Release date

Data sheet status

Change notice

Supersedes

20090302

Product data sheet

PH2520U_2

• The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

• Legal texts have been adapted to the new company name where appropriate.

PH2520U_2

20051115

Product data sheet

PH2520U-01

20030502

Product data

(9397 750 11406)

PH2520U_3

Product data sheet

Rev. 03 — 2 March 2009

10 of 12

PH2520U

Nexperia

N-channel TrenchMOS ultra low level FET

9. Legal information

9.1 Data sheet status

Document status ^[1][2]

Product status^[3]

Development

Definition

Objective [short] data sheet

This document contains data from the objective specification for product development.

This document contains data from the preliminary specification.

This document contains the product specification.

Preliminary [short] data sheet Qualification

Product [short] data sheet Production

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term 'short data sheet' is explained in section "Definitions".

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nexperia.com.

Applications — Applications that are described herein for any of these

9.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. Nexperia does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

products are for illustrative purposes only. Nexperia makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local Nexperia sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall prevail.

Terms and conditions of sale — Nexperia products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nexperia.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by Nexperia. In case of

any inconsistency or conflict between information in this document and such

terms and conditions, the latter will prevail.

9.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, Nexperia does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

No offer to sell or license — Nothing in this document may be interpreted or

construed as an offer to sell products that is open for acceptance or the grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Right to make changes — Nexperia reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

9.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

Suitability for use — Nexperia products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of a Nexperia product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. Nexperia accepts no liability for inclusion and/or use of

Nexperia products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

10. Contact information

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

PH2520U_3

Product data sheet

Rev. 03 — 2 March 2009

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Nexperia

N-channel TrenchMOS ultra low level FET

11. Contents

Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1

1.2

1.3

1.4

General description . . . . . . . . . . . . . . . . . . . . . .1

Features and benefits. . . . . . . . . . . . . . . . . . . . .1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

Quick reference data . . . . . . . . . . . . . . . . . . . . .1

Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

Ordering information. . . . . . . . . . . . . . . . . . . . . .2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2

Thermal characteristics . . . . . . . . . . . . . . . . . . .4

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5

Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9

Revision history. . . . . . . . . . . . . . . . . . . . . . . . .10

Legal information. . . . . . . . . . . . . . . . . . . . . . . .11

Data sheet status . . . . . . . . . . . . . . . . . . . . . . .11

Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .11

9.1

9.2

9.3

9.4

Contact information. . . . . . . . . . . . . . . . . . . . . .11

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 02 March 2009

PH2520U [NEXPERIA]

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