PDTD123ET [NEXPERIA]
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhmProduction;
| 型号： | PDTD123ET |
| 厂家： | 
Nexperia |
| 描述： | NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhmProduction 开关 光电二极管 晶体管 |
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| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
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Team Nexperia
PDTD123E series
NPN 500 mA, 50 V resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
Rev. 02 — 16 November 2009
Product data sheet
1. Product profile
1.1 General description
500 mA NPN Resistor-Equipped Transistors (RET) family.
Table 1. Product overview
Type number
Package
NXP
PNP complement
JEITA
SC-59A
SC-43A
-
JEDEC
TO-236
TO-92
PDTD123EK
PDTD123ES[1]
PDTD123ET
SOT346
SOT54
SOT23
PDTB123EK
PDTB123ES
PDTB123ET
TO-236AB
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).
1.2 Features
Built-in bias resistors
Reduces component count
Simplifies circuit design
500 mA output current capability
Reduces pick and place costs
±10 % resistor ratio tolerance
1.3 Applications
Digital application in automotive and
Cost saving alternative for BC817 series
industrial segments
in digital applications
Controlling IC inputs
Switching loads
1.4 Quick reference data
Table 2.
Symbol
VCEO
IO
Quick reference data
Parameter
Conditions
Min
-
Typ
-
Max
50
Unit
V
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
bias resistor ratio
open base
-
-
500
2.86
1.1
mA
kΩ
R1
1.54
0.9
2.2
1.0
R2/R1
PDTD123E series
NXP Semiconductors
NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
2. Pinning information
Table 3.
Pinning
Pin
Description
Simplified outline
Symbol
SOT54
1
2
3
input (base)
2
3
output (collector)
GND (emitter)
R1
1
1
1
1
1
2
3
R2
001aab347
006aaa145
SOT54A
1
2
3
input (base)
2
3
output (collector)
GND (emitter)
R1
R1
R1
1
2
R2
3
001aab348
006aaa145
SOT54 variant
1
2
3
input (base)
2
3
output (collector)
GND (emitter)
1
2
3
R2
001aab447
006aaa145
SOT23, SOT346
1
2
3
input (base)
3
3
2
GND (emitter)
output (collector)
R2
1
2
006aaa144
sym007
PDTD123E_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 16 November 2009
2 of 10
PDTD123E series
NXP Semiconductors
NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
3. Ordering information
Table 4.
Ordering information
Type number
Package
Name
Description
Version
PDTD123EK
PDTD123ES[1]
SC-59A
SC-43A
plastic surface mounted package; 3 leads
SOT346
plastic single-ended leaded (through hole) package; SOT54
3 leads
PDTD123ET
-
plastic surface mounted package; 3 leads
SOT23
[1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).
4. Marking
Table 5.
Marking codes
Type number
PDTD123EK
PDTD123ES
PDTD123ET
Marking code[1]
E3
D123ES
*7T
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
VI
Parameter
Conditions
open emitter
open base
Min
Max
50
Unit
V
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
-
-
-
50
V
open collector
10
V
positive
-
-
-
+12
−10
500
V
negative
V
IO
output current (DC)
total power dissipation
SOT346
mA
[1]
Ptot
Tamb ≤ 25 °C
-
250
mW
mW
mW
°C
SOT54
-
500
SOT23
-
250
Tstg
Tj
storage temperature
junction temperature
ambient temperature
−65
-
+150
150
°C
Tamb
−65
+150
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
PDTD123E_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 16 November 2009
3 of 10
PDTD123E series
NXP Semiconductors
NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
6. Thermal characteristics
Table 7.
Symbol Parameter
Rth(j-a) thermal resistance from
Thermal characteristics
Conditions
Min
Typ
Max
Unit
[1]
in free air
junction to ambient
SOT346
-
-
-
-
-
-
500
250
500
K/W
K/W
K/W
SOT54
SOT23
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions
collector-base cut-off VCB = 40 V; IE = 0 A
Min
Typ
Max
100
100
0.5
Unit
ICBO
-
-
-
-
-
-
nA
nA
μA
current
VCB = 50 V; IE = 0 A
VCE = 50 V; IB = 0 A
ICEO
IEBO
collector-emitter
cut-off current
emitter-base cut-off VEB = 5 V; IC = 0 A
current
-
-
2
mA
hFE
DC current gain
VCE = 5 V; IC = 50 mA
IC = 50 mA; IB = 2.5 mA
40
-
-
-
-
VCEsat
collector-emitter
0.3
V
saturation voltage
VI(off)
VI(on)
off-state input
voltage
VCE = 5 V; IC = 100 μA
0.6
1.0
1.1
1.5
1.8
2.0
V
on-state input
voltage
VCE = 0.3 V; IC = 20 mA
V
R1
bias resistor 1 (input)
bias resistor ratio
1.54
0.9
-
2.2
1.0
7
2.86
1.1
-
kΩ
R2/R1
Cc
collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 100 MHz
pF
PDTD123E_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 16 November 2009
4 of 10
PDTD123E series
NXP Semiconductors
NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
006aaa319
006aaa318
−1
3
10
10
(1)
(2)
(3)
h
FE
V
CEsat
(V)
2
10
10
(1)
(2)
(3)
1
−2
−1
10
10
10
2
−1
2
3
1
10
10
1
10
10
10
I
C
(mA)
I
C
(mA)
VCE = 5 V
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa321
006aaa320
10
10
V
I(off)
V
I(on)
(V)
(V)
(1)
(2)
(1)
(2)
1
1
(3)
(3)
−1
10
−1
10
10
10
−1
−1
2
3
1
10
1
10
10
10
I
(mA)
I
C
(mA)
C
VCE = 0.3 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
VCE = 5 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 3. On-state input voltage as a function of
collector current; typical values
Fig 4. Off-state input voltage as a function of
collector current; typical values
PDTD123E_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 16 November 2009
5 of 10
PDTD123E series
NXP Semiconductors
NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
8. Package outline
3.1
2.7
1.3
1.0
0.45
0.38
4.2
3.6
3
0.6
0.2
0.48
0.40
3.0 1.7
2.5 1.3
1
2
3
4.8
4.4
2.54
1.27
1
2
0.50
0.35
0.26
0.10
5.2
5.0
14.5
12.7
1.9
Dimensions in mm
04-11-11
Dimensions in mm
04-11-16
Fig 5. Package outline SOT346 (SC-59A/TO-236)
Fig 6. Package outline SOT54 (SC-43A/TO-92)
0.45
0.38
0.45
0.38
4.2
4.2
3.6
3.6
1.27
0.48
0.40
3 max
1
2.5
max
0.48
0.40
1
2
3
2
4.8
4.4
5.08
4.8
4.4
2.54
1.27
2.54
3
5.2
5.0
14.5
12.7
5.2
5.0
14.5
12.7
Dimensions in mm
04-06-28
Dimensions in mm
05-01-10
Fig 7. Package outline SOT54A
Fig 8. Package outline SOT54 variant
3.0
2.8
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
0.48
0.38
0.15
0.09
1.9
Dimensions in mm
04-11-04
Fig 9. Package outline SOT23 (TO-236AB)
PDTD123E_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 16 November 2009
6 of 10
PDTD123E series
NXP Semiconductors
NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
9. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
3000
5000
10000
-135
-
PDTD123EK
PDTD123ES
SOT346
SOT54
4 mm pitch, 8 mm tape and reel
bulk, straight leads
-115
-
-
-412
SOT54A
tape and reel, wide pitch
tape ammopack, wide pitch
-
-
-116
-126
-
-
-
SOT54 variant bulk, delta pinning
SOT23 4 mm pitch, 8 mm tape and reel
-
-112
-
PDTD123ET
-215
-235
[1] For further information and the availability of packing methods, see Section 12.
PDTD123E_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 16 November 2009
7 of 10
PDTD123E series
NXP Semiconductors
NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
10. Revision history
Table 10. Revision history
Document ID
Release date
20091116
Data sheet status
Change notice
Supersedes
PDTD123E_SER_2
Modifications:
Product data sheet
-
PDTD123E_SER_1
• This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
PDTD123E_SER_1
20050408
Product data sheet
-
-
PDTD123E_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 16 November 2009
8 of 10
PDTD123E series
NXP Semiconductors
NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PDTD123E_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 16 November 2009
9 of 10
PDTD123E series
NXP Semiconductors
NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
13. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 3
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
Packing information . . . . . . . . . . . . . . . . . . . . . 7
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8
3
4
5
6
7
8
9
10
11
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
11.1
11.2
11.3
11.4
12
13
Contact information. . . . . . . . . . . . . . . . . . . . . . 9
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 16 November 2009
Document identifier: PDTD123E_SER_2
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