PDTA124XQB [NEXPERIA]
50 V, 100 mA PNP resistor-equipped transistorsProduction;型号: | PDTA124XQB |
厂家: | Nexperia |
描述: | 50 V, 100 mA PNP resistor-equipped transistorsProduction |
文件: | 总20页 (文件大小:356K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PDTA143X/123J/143Z/114Y/124XQB
series
50 V, 100 mA PNP resistor-equipped transistors
Rev. 1 — 28 September 2021
Product data sheet
1. General description
100 mA PNP Resistor-Equipped Transistor (RET) family in an ultra small DFN1110D-3 (SOT8015)
leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks.
Table 1. Product overview
Type number
R1
kΩ
4.7
2.2
4.7
10
R2
kΩ
10
47
47
47
47
Package
JEDEC
MO-340BA
NPN complement:
Nexperia
PDTA143XQB
PDTA123JQB
PDTA143ZQB
PDTA114YQB
PDTA124XQB
SOT8015
PDTC143XQB
PDTC123JQB
PDTC143ZQB
PDTC114YQB
PDTC124XQB
22
2. Features and benefits
•
•
•
•
•
•
•
100 mA output current capability
Built-in resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
Low package height of 0.5 mm
Suitable for Automatic Optical Inspection (AOI) of solder joint
3. Applications
•
•
•
•
Digital applications
Cost saving alternative for BC857 series in digital applications
Controlling IC inputs
Switching loads
4. Quick reference data
Table 2. Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol
VCEO
IO
Parameter
Conditions
Min
Typ
Max
-50
Unit
collector-emitter voltage
output current
open base
-
-
-
-
V
-100
mA
Nexperia
PDTA143X/123J/143Z/114Y/124XQB
series
50 V, 100 mA PNP resistor-equipped transistors
5. Pinning information
Table 3. Pinning
Pin
1
Symbol
Description
Simplified outline
Graphic symbol
I
input (base)
O
R1
2
GND
O
GND (emitter)
output (collector)
3
I
3
R2
GND
1
2
aaa-019606
Transparent top view
6. Ordering information
Table 4. Ordering information
Type number
Package
Name
Description
Version
PDTA143XQB
PDTA123JQB
PDTA143ZQB
PDTA114YQB
PDTA124XQB
DFN1110D-3
plastic leadless extremely thin small outline package with
side-wettable flanks (SWF); 3 terminals; 0.65 mm pitch;
body: 1.1 x 1.0 x 0.48 mm
SOT8015
7. Marking
Table 5. Marking
Type number
Marking code
PDTA143XQB
PDTA123JQB
PDTA143ZQB
PDTA114YQB
PDTA124XQB
D6
D2
D7
C9
D4
©
PDTA143X_TO_124XQB_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
Rev. 1 — 28 September 2021
2 / 20
Nexperia
PDTA143X/123J/143Z/114Y/124XQB
series
50 V, 100 mA PNP resistor-equipped transistors
8. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Tamb = 25 °C unless otherwise specified.
Symbol
VCBO
Parameter
Conditions
open emitter
open base
Min
Max
-50
Unit
V
collector-base voltage
collector-emitter voltage
emitter-base voltage
PDTA143XQB
PDTA123JQB
-
-
VCEO
-50
V
VEBO
open collector
-
-
-
-
-
-7
-5
-5
-6
-7
V
V
V
V
V
PDTA143ZQB
PDTA114YQB
PDTA124XQB
input voltage
VI
PDTA143XQB
PDTA123JQB
-30
-12
-30
-40
-40
-
+7
V
+5
V
PDTA143ZQB
+5
V
PDTA114YQB
PDTA124XQB
output current
+6
V
+7
V
IO
-100
340
420
150
150
150
mA
mW
mW
°C
°C
°C
Ptot
total power dissipation
Tamb ≤ 25 °C
[1] -
[2] -
-
Tj
junction temperature
ambient temperature
storage temperature
Tamb
Tstg
-55
-65
[1] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided; 35 µm copper; tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB; single-sided; 70 µm copper; tin-plated and standard footprint.
aaa-030584
500
P
tot
(mW)
(1)
(2)
400
300
200
100
0
-75
-25
25
75
125
175
(°C)
T
amb
(1) FR4 PCB; single-sided; 70 µm copper; standard footprint
(2) FR4 PCB; single-sided; 35 µm copper; standard footprint
Fig. 1. Power derating curves
©
PDTA143X_TO_124XQB_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
Rev. 1 — 28 September 2021
3 / 20
Nexperia
PDTA143X/123J/143Z/114Y/124XQB
series
50 V, 100 mA PNP resistor-equipped transistors
9. Thermal characteristics
Table 7. Thermal characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
[1] -
[2] -
Typ
Max
368
298
Unit
K/W
K/W
Rth(j-a)
thermal resistance from junction to ambient
in free air
-
-
[1] Device mounted on an FR4 PCB; single-sided; 35 μm copper; tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB; single-sided; 70 μm copper; tin-plated and standard footprint.
aaa-030582
3
10
duty cycle =
Z
th(j-a)
(K/W)
1
0.75
0.33
0.50
2
10
0.20
0.05
0.10
0.02
10
0.01
0
1
-5
10
-4
-3
-2
10
-1
2
3
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB; single-sided; 35 μm copper; tin-plated and standard footprint.
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-030583
3
10
duty cycle =
Z
th(j-a)
(K/W)
1
0.75
0.33
0.50
2
10
0.20
0.05
0.10
0.02
10
0.01
0
1
-5
10
-4
-3
-2
10
-1
2
3
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB; single-sided; 70 μm copper; tin-plated and standard footprint.
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PDTA143X_TO_124XQB_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
Rev. 1 — 28 September 2021
4 / 20
Nexperia
PDTA143X/123J/143Z/114Y/124XQB
series
50 V, 100 mA PNP resistor-equipped transistors
10. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max Unit
V(BR)CBO
collector-base
IC = -100 µA; IE = 0 A
-50
-
-
V
breakdown voltage
V(BR)CEO
ICBO
collector-emitter
breakdown voltage
IC = -2 mA; IB = 0 A
VCB = -50 V; IE = 0 A
-50
-
-
-
-
V
collector-base cut-off
current
-100 nA
-100 nA
ICEO
collector-emitter cut-off VCE = -30 V; IB = 0 A
current
-
-
-
-
VCE = -30 V; IB = 0 A; Tj = 150 °C
-5
µA
IEBO
emitter-base cut-off current
PDTA143XQB
PDTA123JQB
PDTA143ZQB
PDTA114YQB
PDTA124XQB
DC current gain
PDTA143XQB
PDTA123JQB
PDTA143ZQB
PDTA114YQB
PDTA124XQB
VEB = -5 V; IC = 0 A
-
-
-
-
-
-
-600 µA
-180 µA
-170 µA
-150 µA
-120 µA
hFE
VCE = -5 V; IC = -10 mA
VCE = -5 V; IC = -5 mA
50
-
-
-
-
-
-
-
-
-
-
100
100
100
80
VCEsat
VI(off)
VI(on)
collector-emitter saturation voltage
IC = -10 mA; IB = -0.5 mA
PDTA143XQB
PDTA123JQB
PDTA143ZQB
PDTA114YQB
PDTA124XQB
off-state input voltage
PDTA143XQB
PDTA123JQB
PDTA143ZQB
PDTA114YQB
PDTA124XQB
on-state input voltage
PDTA143XQB
PDTA123JQB
PDTA143ZQB
PDTA114YQB
PDTA124XQB
-
-
-
-
-
-
-
-
-
-
-100 mV
-100 mV
-100 mV
-100 mV
-100 mV
IC = -5 mA; IB = -0.25 mA
IC = -10 mA; IB = -0.5 mA
VCE = -5 V ; IC = -100 µA
-
-
-
-
-
-0.9
-0.6
-0.6
-0.7
-0.8
-0.3
-0.5
-0.5
-0.5
-0.5
V
V
V
V
V
VCE = -0.3 V ; IC = -20 mA
VCE = -0.3 V ; IC = -5 mA
VCE = -0.3 V ; IC = -5 mA
VCE = -0.3 V ; IC = -1 mA
VCE = -0.3 V ; IC = -2 mA
-2.5
-1.1
-1.3
-1.4
-2
-1.5
-0.75
-0.9
-0.8
-1.1
-
-
-
-
-
V
V
V
V
V
©
PDTA143X_TO_124XQB_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
Rev. 1 — 28 September 2021
5 / 20
Nexperia
PDTA143X/123J/143Z/114Y/124XQB
series
50 V, 100 mA PNP resistor-equipped transistors
Symbol
Parameter
Conditions
Min
Typ
Max Unit
R1
bias resistor 1 (input)
PDTA143XQB
PDTA123JQB
[1] 3.3
4.7
6.1
kΩ
1.54 2.2
2.86 kΩ
PDTA143ZQB
PDTA114YQB
PDTA124XQB
bias resistor ratio
PDTA143XQB
PDTA123JQB
3.3
7
4.7
10
6.1
13
kΩ
kΩ
15.4 22
28.6 kΩ
R2/R1
[1] 1.7
17
2.13 2.6
21
10
4.7
26
12
5.7
PDTA143ZQB
PDTA114YQB
PDTA124XQB
transition frequency
collector capacitance
8
3.7
1.7
2.13 2.6
fT
VCE = -5 V; IC = -10 mA; f = 100 MHz
VCB = -10 V; IE = ie = 0 A; f = 1 MHz
[2] -
180
-
-
MHz
pF
Cc
-
3
[1] See "Section 11: Test information" for resistor calculation and test conditions
[2] Characteristics of built-in transistor
006aac846
3
10
(1)
h
FE
(2)
(3)
aaa-018912
-0.1
C
I
-0.80 mA
-0.72 mA
-0.64 mA
2
10
(A)
-0.08
-0.56 mA
-0.48 mA
-0.06
-0.04
-0.02
0
10
-0.40 mA
-0.32 mA
-0.24 mA
1
-1
-10
2
-0.16 mA
-1
-10
-10
I
(mA)
C
I
= -0.08 mA
B
VCE = -5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -40 °C
0
-1
-2
-3
-4
-5
V
(V)
CE
Tamb = 25 °C
Fig. 4. PDTA143XQB: DC current gain as a function of Fig. 5. PDTA143XQB: Collector current as a function of
collector current; typical values
collector-emitter voltage; typical values
©
PDTA143X_TO_124XQB_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
Rev. 1 — 28 September 2021
6 / 20
Nexperia
PDTA143X/123J/143Z/114Y/124XQB
series
50 V, 100 mA PNP resistor-equipped transistors
aaa-018659
-1
006aac848
-10
V
CEsat
(V)
V
I(on)
(V)
(1)
-1
-10
(2)
(1)
(2)
(3)
-1
(3)
-2
-10
2
-1
-10
-10
-1
-10
I
(mA)
C
-1
2
-10
-1
-10
-10
I
(mA)
C
IC/IB = 20
VCE = -0.3 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -40 °C
(1) Tamb = -40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 6. PDTA143XQB: Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig. 7. PDTA143XQB: On-state input voltage as a
function of collector current; typical values
006aac849
-10
006aac850
8
C
(pF)
c
V
I(off)
(V)
6
4
2
0
(1)
-1
(2)
(3)
-1
-10
-1
-10
-1
-10
I
(mA)
C
0
-10
-20
-30
-40
V
-50
(V)
CB
VCE = -5 V
(1) Tamb = -40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
f = 1 MHz
Tamb = 25 °C
Fig. 9. PDTA143XQB: Collector capacitance as a
function of collector-base voltage; typical
values
Fig. 8. PDTA143XQB: Off-state input voltage as a
function of collector current; typical values
©
PDTA143X_TO_124XQB_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
Rev. 1 — 28 September 2021
7 / 20
Nexperia
PDTA143X/123J/143Z/114Y/124XQB
series
50 V, 100 mA PNP resistor-equipped transistors
006aac814
3
10
(1)
h
FE
aaa-018916
(2)
(3)
-0.1
-0.80 mA
I
C
(A)
-0.72 mA
-0.64 mA
2
10
-0.08
-0.56 mA
-0.48 mA
-0.40 mA
-0.32 mA
-0.06
-0.04
-0.02
0
10
-0.24 mA
-0.16 mA
1
-1
-10
2
-1
-10
-10
I
= -0.08 mA
B
I
(mA)
C
VCE = -5 V
0
-1
-2
-3
-4
-5
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -40 °C
V
(V)
CE
Tamb = 25 °C
Fig. 10. PDTA123JQB: DC current gain as a function of Fig. 11. PDTA123JQB: Collector current as a function of
collector current; typical values
collector-emitter voltage; typical values
aaa-018913
-1
006aac816
-10
V
CEsat
(V)
V
I(on)
(V)
-1
-10
(1)
-1
(1)
(2)
(2)
(3)
(3)
-2
-10
-1
2
-10
-1
-10
-10
-1
-10
I
(mA)
C
-1
2
-10
-1
-10
-10
I
(mA)
C
IC/IB = 20
VCE = -0.3 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -40 °C
(1) Tamb = -40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 12. PDTA123JQB: Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig. 13. PDTA123JQB: On-state input voltage as a
function of collector current; typical values
©
PDTA143X_TO_124XQB_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
Rev. 1 — 28 September 2021
8 / 20
Nexperia
PDTA143X/123J/143Z/114Y/124XQB
series
50 V, 100 mA PNP resistor-equipped transistors
006aac817
-1
(1)
(2)
006aac818
9
V
I(off)
(V)
C
(pF)
c
(3)
6
3
0
-1
-10
-1
-10
-1
-10
I
(mA)
C
0
-10
-20
-30
-40
V
-50
(V)
CB
VCE = -5 V
(1) Tamb = -40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
f = 1 MHz
Tamb = 25 °C
Fig. 15. PDTA123JQB: Collector capacitance as a
function of collector-base voltage; typical
values
Fig. 14. PDTA123JQB: Off-state input voltage as a
function of collector current; typical values
006aac824
3
10
h
FE
(1)
aaa-018917
-0.1
(2)
-0.70 mA
I
C
(A)
(3)
2
10
-0.63 mA
-0.56 mA
-0.08
-0.49 mA
-0.42 mA
-0.35 mA
-0.06
-0.04
-0.02
0
10
-0.28 mA
-0.21 mA
-0.14 mA
1
-1
-10
2
-1
-10
-10
I
= -0.07 mA
I
(mA)
B
C
VCE = -5 V
0
-1
-2
-3
-4
-5
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -40 °C
V
(V)
CE
Tamb = 25 °C
Fig. 16. PDTA143ZQB: DC current gain as a function of Fig. 17. PDTA143ZQB: Collector current as a function of
collector current; typical values
collector-emitter voltage; typical values
©
PDTA143X_TO_124XQB_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
Rev. 1 — 28 September 2021
9 / 20
Nexperia
PDTA143X/123J/143Z/114Y/124XQB
series
50 V, 100 mA PNP resistor-equipped transistors
aaa-018914
-1
006aac826
-10
V
CEsat
(V)
V
I(on)
(V)
-1
(1)
-10
-1
(2)
(1)
(2)
(3)
(3)
-2
-10
-1
2
-10
-1
-10
-10
-1
-10
I
(mA)
C
-1
2
-10
-1
-10
-10
I
(mA)
C
IC/IB = 20
VCE = -0.3 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -40 °C
(1) Tamb = -40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 18. PDTA143ZQB: Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig. 19. PDTA143ZQB: On-state input voltage as a
function of collector current; typical values
006aac827
-10
006aac828
8
C
(pF)
c
V
I(off)
(V)
6
4
2
0
(1)
-1
(2)
(3)
-1
-10
-1
-10
-1
-10
I
(mA)
C
0
-10
-20
-30
-40
V
-50
(V)
CB
VCE = -5 V
(1) Tamb = -40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
f = 1 MHz
Tamb = 25 °C
Fig. 21. PDTA143ZQB: Collector capacitance as a
function of collector-base voltage; typical
values
Fig. 20. PDTA143ZQB: Off-state input voltage as a
function of collector current; typical values
©
PDTA143X_TO_124XQB_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
Rev. 1 — 28 September 2021
10 / 20
Nexperia
PDTA143X/123J/143Z/114Y/124XQB
series
50 V, 100 mA PNP resistor-equipped transistors
006aac789
3
10
h
FE
(1)
aaa-018918
-0.1
(2)
-0.80 mA
(3)
I
C
(A)
-0.72 mA
-0.64 mA
2
10
-0.08
-0.56 mA
-0.48 mA
-0.40 mA
-0.32 mA
-0.06
-0.04
-0.02
0
10
-0.24 mA
-0.16 mA
1
-1
-10
2
-1
-10
-10
I
B
= -0.08 mA
I
(mA)
C
VCE = -5 V
0
-1
-2
-3
-4
-5
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -40 °C
V
(V)
CE
Tamb = 25 °C
Fig. 22. PDTA114YQB: DC current gain as a function of Fig. 23. PDTA114YQB: Collector current as a function of
collector current; typical values
collector-emitter voltage; typical values
aaa-018915
-1
006aac791
-10
V
CEsat
(V)
V
I(on)
(V)
-1
(1)
(2)
-10
-1
(1)
(2)
(3)
(3)
-2
-10
-1
2
-10
-1
-10
-10
-1
-10
I
(mA)
C
-1
2
-10
-1
-10
-10
I
(mA)
C
IC/IB = 20
VCE = -0.3 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -40 °C
(1) Tamb = -40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 24. PDTA114YQB: Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig. 25. PDTA114YQB: On-state input voltage as a
function of collector current; typical values
©
PDTA143X_TO_124XQB_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
Rev. 1 — 28 September 2021
11 / 20
Nexperia
PDTA143X/123J/143Z/114Y/124XQB
series
50 V, 100 mA PNP resistor-equipped transistors
006aac792
-10
006aac793
7
C
c
(pF)
V
I(off)
(V)
6
5
4
3
2
1
0
(1)
(2)
(3)
-1
-1
-10
-1
-10
-1
-10
I
(mA)
C
0
-10
-20
-30
-40
V
-50
(V)
CB
VCE = -5 V
(1) Tamb = -40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
f = 1 MHz
Tamb = 25 °C
Fig. 27. PDTA114YQB: Collector capacitance as a
function of collector-base voltage; typical
values
Fig. 26. PDTA114YQB: Off-state input voltage as a
function of collector current; typical values
aaa-021338
3
10
h
FE
(1)
(2)
aaa-021339
-0.1
-0.90 mA
-0.81 mA
I
C
(A)
2
10
(3)
-0.72 mA
-0.63 mA
-0.45 mA
-0.08
-0.54 mA
-0.06
-0.04
-0.02
0
10
-0.36 mA
-0.18 mA
-0.27 mA
I
= -0.09 mA
B
1
-1
-10
2
-1
-10
-10
I
(mA)
C
VCE = -5 V
0
-1
-2
-3
-4
-5
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -40 °C
V
(V)
CE
Tamb = 25 °C
Fig. 28. PDTA124XQB: DC current gain as a function of Fig. 29. PDTA124XQB: Collector current as a function of
collector current; typical values
collector-emitter voltage; typical values
©
PDTA143X_TO_124XQB_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
Rev. 1 — 28 September 2021
12 / 20
Nexperia
PDTA143X/123J/143Z/114Y/124XQB
series
50 V, 100 mA PNP resistor-equipped transistors
aaa-021342
aaa-021340
2
-1
-10
V
I(on)
(V)
V
CEsat
(V)
(1)
(2)
(3)
-10
-1
-10
(1)
-1
-1
(2)
(3)
-2
-10
-10
-1
2
-1
2
-10
-1
-10
-10
-10
-1
-10
-10
I
(mA)
I (mA)
C
C
IC/IB = 10
VCE = -0.3 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -40 °C
(1) Tamb = -40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 30. PDTA124XQB: Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig. 31. PDTA124XQB: On-state input voltage as a
function of collector current; typical values
aaa-021341
-10
aaa-021343
4
C
(pF)
c
V
I(off)
(V)
3
2
1
0
(1)
(2)
-1
(3)
-1
-10
-1
-10
-1
-10
I
(mA)
C
0
-10
-20
-30
-40
V
-50
(V)
CB
VCE = -5 V
(1) Tamb = -40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
f = 1 MHz
Tamb = 25 °C
Fig. 33. PDTA124XQB: Collector capacitance as a
function of collector-base voltage; typical
values
Fig. 32. PDTA124XQB: Off-state input voltage as a
function of collector current; typical values
©
PDTA143X_TO_124XQB_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
Rev. 1 — 28 September 2021
13 / 20
Nexperia
PDTA143X/123J/143Z/114Y/124XQB
series
50 V, 100 mA PNP resistor-equipped transistors
006aac763
3
10
f
T
(MHz)
2
10
10
-1
-10
2
-1
-10
-10
I
(mA)
C
f = 100 MHz
Tamb = 25 °C
VCE = -5 V
Fig. 34. Transition frequency as a function of collector current; typical values of built-in transistor
©
PDTA143X_TO_124XQB_SER
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Nexperia B.V. 2021. All rights reserved
Product data sheet
Rev. 1 — 28 September 2021
14 / 20
Nexperia
PDTA143X/123J/143Z/114Y/124XQB
series
50 V, 100 mA PNP resistor-equipped transistors
11. Test information
Resistor calculation
•
Calculation of bias resistor 1 (R1)
•
Calculation of bias resistor ratio (R2/R1)
n.c.
I
I
; I
I1 I2
R1
; I
I3 I4
R2
GND
aaa-020083
Fig. 35. PNP transistor: Resistor test circuit
Resistor test conditions
Table 9. Resistor test conditions
Type number R1 (kΩ)
R2 (kΩ)
Test conditions
II1
II2
II3
II4
PDTA143XQB 4.7
PDTA123JQB 2.2
10
47
47
47
47
-350 μA
-90 μA
-450 μA
-140 μA
-140 μA
-140 μA
-105 μA
350 μA
55 μA
55 μA
55 μA
55 μA
450 μA
105 μA
105 μA
105 μA
105 μA
PDTA143ZQB 4.7
PDTA114YQB 10
PDTA124XQB 22
-90 μA
-90 μA
-55 μA
©
PDTA143X_TO_124XQB_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
Rev. 1 — 28 September 2021
15 / 20
Nexperia
PDTA143X/123J/143Z/114Y/124XQB
series
50 V, 100 mA PNP resistor-equipped transistors
12. Package outline
1.1
0.50
0.44
0.04
max
0.65
0.30
0.22
0.27
0.20
1
2
0.20
1.0
0.48
0.40
3
0.95
0.87
0.22
0.10
Dimensions in mm
21-06-29
Fig. 36. Package outline DFN1110D-3 (SOT8015)
©
PDTA143X_TO_124XQB_SER
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Nexperia B.V. 2021. All rights reserved
Product data sheet
Rev. 1 — 28 September 2021
16 / 20
Nexperia
PDTA143X/123J/143Z/114Y/124XQB
series
50 V, 100 mA PNP resistor-equipped transistors
13. Soldering
Footprint information for reflow soldering of DFN1110D-3 package
SOT8015
1.4
0.45
0.35
0.25
0.2
0.3
0.65
0.6
0.5
0.4
0.12 0.22
0.34 0.44
1.8
0.88 0.78 0.68
0.34
0.34
0.2
0.3
0.4
0.8
0.9
occupied area
solder resist
1.0
solder lands
solder paste
recommended stencil thickness: 0.1 mm
Dimensions in mm
19-11-27
Issue date
sot8015_fr
Fig. 37. Reflow soldering footprint DFN1110D-3 (SOT8015)
©
PDTA143X_TO_124XQB_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
Rev. 1 — 28 September 2021
17 / 20
Nexperia
PDTA143X/123J/143Z/114Y/124XQB
series
50 V, 100 mA PNP resistor-equipped transistors
14. Revision history
Table 10. Revision history
Data sheet ID
Release date Data sheet status Change
Supersedes
notice
PDTA143X_to_124XQB_SER v.1
20210928
Product data sheet
-
-
©
PDTA143X_TO_124XQB_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
Rev. 1 — 28 September 2021
18 / 20
Nexperia
PDTA143X/123J/143Z/114Y/124XQB
series
50 V, 100 mA PNP resistor-equipped transistors
injury, death or severe property or environmental damage. Nexperia and its
suppliers accept no liability for inclusion and/or use of Nexperia products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
15. Legal information
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Data sheet status
Document status Product
Definition
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
[1][2]
status [3]
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Nexperia product is suitable
and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Nexperia products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Nexperia does not accept any
liability in this respect.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
Definitions
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of commercial sale — Nexperia products are
sold subject to the general terms and conditions of commercial sale, as
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in a valid written individual agreement. In case an individual agreement is
concluded only the terms and conditions of the respective agreement shall
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terms and conditions with regard to the purchase of Nexperia products by
customer.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be
valid in which the Nexperia product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
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Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no responsibility
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Non-automotive qualified products — Unless this data sheet expressly
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accepts no liability for inclusion and/or use of non-automotive qualified
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In no event shall Nexperia be liable for any indirect, incidental, punitive,
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or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
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In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without Nexperia’s warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
Nexperia’s specifications such use shall be solely at customer’s own risk,
and (c) customer fully indemnifies Nexperia for any liability, damages or failed
product claims resulting from customer design and use of the product for
automotive applications beyond Nexperia’s standard warranty and Nexperia’s
product specifications.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Nexperia.
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reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
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to information published in this document, including without limitation
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Trademarks
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systems or equipment, nor in applications where failure or malfunction
of an Nexperia product can reasonably be expected to result in personal
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
©
PDTA143X_TO_124XQB_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
Rev. 1 — 28 September 2021
19 / 20
Nexperia
PDTA143X/123J/143Z/114Y/124XQB
series
50 V, 100 mA PNP resistor-equipped transistors
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 4
10. Characteristics............................................................5
11. Test information........................................................15
12. Package outline........................................................ 16
13. Soldering................................................................... 17
14. Revision history........................................................18
15. Legal information......................................................19
© Nexperia B.V. 2021. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 28 September 2021
©
PDTA143X_TO_124XQB_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
Rev. 1 — 28 September 2021
20 / 20
相关型号:
PDTA124XU,115
PDTA124X series - PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = 47 kOhm SC-70 3-Pin
NXP
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