PBSS8110T-Q [NEXPERIA]
100 V, 1 A NPN low VCEsat transistorProduction;型号: | PBSS8110T-Q |
厂家: | Nexperia |
描述: | 100 V, 1 A NPN low VCEsat transistorProduction |
文件: | 总13页 (文件大小:276K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PBSS8110T-Q
100 V, 1 A NPN low VCEsat transistor
13 May 2022
Product data sheet
1. General description
NPN low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic
package.
PNP complement: PBSS9110T-Q
2. Features and benefits
•
Low collector-emitter saturation voltage VCEsat
•
•
High collector current capability: IC and ICM
Qualified according to AEC-Q101 and recommended for use in automotive applications
3. Applications
•
Major application segments
•
•
•
Automotive 42 V power
Telecom infrastructure
Industrial
•
•
Power management
•
•
•
•
DC/DC converters
Supply line switching
Battery charger
LCD backlighting
Peripheral drivers
•
•
Driver in low supply voltage applications (e.g. lamps and LEDs)
Inductive load driver (e.g. relays, buzzers and motors)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
100
V
IC
collector current
-
-
-
-
1
A
ICM
peak collector current single pulse; tp ≤ 1 ms
-
3
A
RCEsat
collector-emitter
saturation resistance
IC = 1 A; IB = 100 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
165
200
mΩ
Nexperia
PBSS8110T-Q
100 V, 1 A NPN low VCEsat transistor
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
Description
base
Simplified outline
Graphic symbol
3
B
E
C
C
2
emitter
B
3
collector
E
1
2
sym123
SOT23
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PBSS8110T-Q
SOT23
plastic, surface-mounted package; 3 terminals; 1.9 mm
pitch; 2.9 mm x 1.3 mm x 1 mm body
SOT23
7. Marking
Table 4. Marking codes
Type number
Marking code[1]
%U8
PBSS8110T-Q
[1] % = placeholder for manufacturing site code
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
Min
Max
Unit
V
collector-base voltage
open emitter
-
120
100
5
collector-emitter voltage open base
-
V
emitter-base voltage
collector current
open collector
-
V
-
1
A
ICM
peak collector current
base current
single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C
-
3
A
IB
-
300
300
480
150
150
150
mA
mW
mW
°C
°C
°C
Ptot
total power dissipation
[1]
[2]
-
-
Tj
junction temperature
ambient temperature
storage temperature
-
Tamb
Tstg
-65
-65
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
©
PBSS8110T-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
13 May 2022
2 / 13
Nexperia
PBSS8110T-Q
100 V, 1 A NPN low VCEsat transistor
mle354
500
P
tot
(mW)
400
(1)
(2)
300
200
100
0
0
40
80
120
160
(°C)
T
amb
(1) FR4 PCB; 1 cm2 copper mounting pad for collector.
(2) Standard footprint.
Fig. 1. Power derating curves
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
417
260
Unit
K/W
K/W
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1]
[2]
-
-
-
-
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
©
PBSS8110T-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
13 May 2022
3 / 13
Nexperia
PBSS8110T-Q
100 V, 1 A NPN low VCEsat transistor
mle356
3
10
(1)
Z
th
(2)
(3)
(K/W)
(4)
(5)
2
10
(6)
(7)
t
p
P
δ =
T
(8)
(9)
10
t
t
p
T
(10)
1
10
- 5
- 4
- 3
- 2
- 1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
(1) δ = 1.0
(2) δ = 0.75
(3) δ = 0.5
(4) δ = 0.3
(5) δ = 0.2
(6 )δ = 0.1
(7) δ = 0.05
(8) δ = 0.02
(9) δ = 0.01
(10) δ = 0.0
Fig. 2. Transient thermal impedance as a function of pulse time for standard PCB footprint
mle355
3
10
Z
th
(K/W)
(1)
(2)
2
10
(3)
(4)
(5)
(6)
(7)
t
p
P
δ =
T
10
(8)
(9)
(10)
t
t
p
T
1
10
- 5
- 4
- 3
- 2
- 1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
(1) δ = 1.0
(2) δ = 0.75
(3) δ = 0.5
(4) δ = 0.3
(5) δ = 0.2
(6) δ = 0.1
(7) δ = 0.05
(8) δ = 0.02
(9) δ = 0.01
(10) δ = 0.0
Fig. 3. Transient thermal impedance as a function of pulse time for collector 1 cm2 copper mounting pad
©
PBSS8110T-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
13 May 2022
4 / 13
Nexperia
PBSS8110T-Q
100 V, 1 A NPN low VCEsat transistor
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V(BR)CBO
collector-base
IC = 100 µA; IE = 0 A; Tamb = 25 °C
120
-
-
V
breakdown voltage
V(BR)CEO
V(BR)EBO
collector-emitter
breakdown voltage
IC = 10 mA; IB = 0 A; pulsed; tp ≤ 300
μs; δ ≤ 0.02;; Tamb = 25 °C
100
5
-
-
-
-
V
V
emitter-base
IE = 100 µA; IC = 0 A; Tamb = 25 °C
breakdown voltage
(collector open)
ICBO
collector-base cut-off
current
VCB = 80 V; IE = 0 A; Tamb = 25 °C
VCB = 80 V; IE = 0 A; Tj = 150 °C
-
-
-
-
-
-
100
50
nA
µA
nA
ICES
IEBO
hFE
collector-emitter cut-off VCE = 80 V; VBE = 0 V; Tamb = 25 °C
current
100
emitter-base cut-off
current
VEB = 5 V; IC = 0 A; Tamb = 25 °C
-
-
100
nA
DC current gain
VCE = 10 V; IC = 1 mA; Tamb = 25 °C
VCE = 10 V; IC = 250 mA; Tamb = 25 °C
150
150
100
-
-
-
-
500
-
VCE = 10 V; IC = 500 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
VCE = 10 V; IC = 1 A; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
80
-
-
VCEsat
collector-emitter
saturation voltage
IC = 100 mA; IB = 10 mA; Tamb = 25 °C
IC = 500 mA; IB = 50 mA; Tamb = 25 °C
-
-
-
-
-
40
mV
mV
mV
mΩ
-
120
200
200
IC = 1 A; IB = 100 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
RCEsat
VBEsat
VBEon
fT
collector-emitter
saturation resistance
165
base-emitter saturation IC = 1 A; IB = 100 mA; Tamb = 25 °C
voltage
-
-
-
-
-
1.05
0.9
-
V
base-emitter turn-on
voltage
VCE = 10 V; IC = 1 A; Tamb = 25 °C
-
V
transition frequency
VCE = 10 V; IC = 50 mA; f = 100 MHz;
Tamb = 25 °C
100
-
MHz
pF
Cc
collector capacitance
VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz;
Tamb = 25 °C
7.5
©
PBSS8110T-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
13 May 2022
5 / 13
Nexperia
PBSS8110T-Q
100 V, 1 A NPN low VCEsat transistor
mle352
mle362
600
1.2
BE
V
h
FE
(V)
(1)
(2)
(3)
(1)
(2)
400
0.8
0.4
0
200
(3)
0
10
- 1
2
10
3
4
- 1
2
3
4
10
1
10
10
10
10
(mA)
1
10
10
10
(mA)
I
I
C
C
VCE = 10 V
VCE = 10 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 4. DC current gain as a function of collector
current; typical values
Fig. 5. Base-emitter voltage as a function of collector
current; typical values
mle366
mle353
1
1
V
V
CEsat
CEsat
(V)
(V)
- 1
- 1
10
10
(1)
(2)
(3)
- 2
- 2
10
10
- 1
2
3
4
- 1
2
3
4
10
1
10
10
10
10
(mA)
10
1
10
10
10
10
(mA)
I
I
C
C
IC/IB = 10
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Tamb = 25 °C
Fig. 7. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig. 6. Collector-emitter saturation voltage as a
function of collector current; typical values
©
PBSS8110T-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
13 May 2022
6 / 13
Nexperia
PBSS8110T-Q
100 V, 1 A NPN low VCEsat transistor
mle357
mle363
10
10
V
CEsat
(V)
V
BEsat
(V)
1
1
(1)
(2)
- 1
10
10
(3)
- 1
- 2
10
- 1
- 2
- 3
I
- 4
- 1
2
3
4
10
1
10
10
10
10
(mA)
10
1
10
10
10
10
(mA)
I
C
C
IC/IB = 50
IC/IB = 10
Tamb = 25 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 8. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig. 9. Base-emitter saturation voltage as a function of
collector current; typical values
mle364
mle365
10
1
V
BEsat
(V)
V
BEsat
(V)
1
- 1
- 1
10
10
- 1
2
3
4
- 1
2
3
4
10
1
10
10
10
10
(mA)
10
10
10
10
(mA)
10
10
I
I
C
C
IC/IB = 20
IC/IB = 50
Tamb = 25 °C
Tamb = 25 °C
Fig. 10. Base-emitter saturation voltage as a function of Fig. 11. Base-emitter saturation voltage as a function of
collector current; typical values
collector current; typical values
©
PBSS8110T-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
13 May 2022
7 / 13
Nexperia
PBSS8110T-Q
100 V, 1 A NPN low VCEsat transistor
mle358
mle359
3
10
2
(1)
(2)
I
C
R
CEsat
(Ω)
(3)
(4)
(A)
1.6
(5)
(6)
2
10
(7)
(8)
1.2
0.8
10
(9)
(10)
1
0.4
0
(1)
(2)
(3)
- 1
10
- 1
2
3
I
4
10
1
10
10
10
10
(mA)
0
1
2
3
4
5
C
V
(V)
CE
Tamb = 25 °C
IC/IB = 10
(1) IB = 3500 μA
(2) IB = 3150 μA
(3) IB = 2800 μA
(4) IB = 2450 μA
(5) IB = 2100 μA
(6) IB = 1750 μA
(7) IB = 1400 μA
(8) IB = 1050 μA
(9) IB = 700 μA
(10) IB = 350 μA
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 13. Collector-emitter equivalent on-resistance as a
function of collector current; typical values
Fig. 12. Collector current as a function of collector-
emitter voltage; typical values
mle360
mle361
3
3
10
10
R
CEsat
(Ω)
R
CEsat
(Ω)
2
2
10
10
10
10
1
1
- 1
- 1
10
10
- 1
2
3
I
4
- 1
2
3
4
10
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
C
IC/IB = 20
IC/IB = 50
Tamb = 25 °C
Tamb = 25 °C
Fig. 14. Collector-emitter equivalent on-resistance as a Fig. 15. Collector-emitter equivalent on-resistance as a
function of collector current; typical values
function of collector current; typical values
©
PBSS8110T-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
13 May 2022
8 / 13
Nexperia
PBSS8110T-Q
100 V, 1 A NPN low VCEsat transistor
11. Test information
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
12. Package outline
3.0
2.8
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
0.48
0.38
0.15
0.09
1.9
Dimensions in mm
18-03-12
Fig. 16. Package outline SOT23
13. Soldering
3.3
2.9
1.9
solder lands
solder resist
2
3
1.7
solder paste
occupied area
0.6
(3×)
0.7
(3×)
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig. 17. Reflow soldering footprint for SOT23
©
PBSS8110T-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
13 May 2022
9 / 13
Nexperia
PBSS8110T-Q
100 V, 1 A NPN low VCEsat transistor
2.2
1.2
(2×)
1.4
(2×)
solder lands
solder resist
2.6
4.6
occupied area
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig. 18. Wave soldering footprint for SOT23
©
PBSS8110T-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
13 May 2022
10 / 13
Nexperia
PBSS8110T-Q
100 V, 1 A NPN low VCEsat transistor
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
20220513
Data sheet status
Change notice
Supersedes
PBSS8110T-Q v.1
Product data sheet
-
-
©
PBSS8110T-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
13 May 2022
11 / 13
Nexperia
PBSS8110T-Q
100 V, 1 A NPN low VCEsat transistor
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
15. Legal information
Data sheet status
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Document status Product
Definition
[1][2]
status [3]
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Nexperia product is suitable
and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Nexperia products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Nexperia does not accept any
liability in this respect.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of commercial sale — Nexperia products are
sold subject to the general terms and conditions of commercial sale, as
published at http://www.nexperia.com/profile/terms, unless otherwise agreed
in a valid written individual agreement. In case an individual agreement is
concluded only the terms and conditions of the respective agreement shall
apply. Nexperia hereby expressly objects to applying the customer’s general
terms and conditions with regard to the purchase of Nexperia products by
customer.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be
valid in which the Nexperia product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Disclaimers
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no responsibility
for the content in this document if provided by an information source outside
of Nexperia.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
In no event shall Nexperia be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Nexperia.
Right to make changes — Nexperia reserves the right to make changes
to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use in automotive applications — This Nexperia product
has been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted to
be suitable for use in life support, life-critical or safety-critical systems or
©
PBSS8110T-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
13 May 2022
12 / 13
Nexperia
PBSS8110T-Q
100 V, 1 A NPN low VCEsat transistor
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 2
9. Thermal characteristics............................................... 3
10. Characteristics............................................................5
11. Test information..........................................................9
12. Package outline.......................................................... 9
13. Soldering..................................................................... 9
14. Revision history........................................................11
15. Legal information......................................................12
© Nexperia B.V. 2022. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 13 May 2022
©
PBSS8110T-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
13 May 2022
13 / 13
相关型号:
PBSS8510PA
5200mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2 X 2 MM, 0.65 MM HEIGHT, ULTRA THIN, PLASTIC, LEADLESS, HUSON-3
NXP
©2020 ICPDF网 联系我们和版权申明