PBSS5160T [NEXPERIA]
60 V, 1 A PNP low VCEsat (BISS) transistorProduction;
| 型号： | PBSS5160T |
| 厂家： | 
Nexperia |
| 描述： | 60 V, 1 A PNP low VCEsat (BISS) transistorProduction PC 开关 光电二极管 晶体管 |
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PBSS5160T
60 V, 1 A PNP low VCEsat (BISS) transistor
Rev. 04 — 15 January 2010
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4160T.
1.2 Features
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High efficiency due to less heat generation
Reduces Printed-Circuit Board (PCB) area required
Cost-effective replacement for medium power transistors BCP52 and BCX52
1.3 Applications
Major application segments:
Automotive
Telecom infrastructure
Industrial
Power management:
DC-to-DC conversion
Supply line switching
Peripheral driver:
Driver in low supply voltage applications (e.g. lamps and LEDs)
Inductive load drivers (e.g. relays, buzzers and motors)
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
Quick reference data
Parameter
Conditions
Min
Typ
Max
−60
−1
Unit
V
collector-emitter voltage open base
collector current
-
-
-
-
-
-
A
ICM
peak collector current
t = 1 ms or limited
−2
A
by Tj(max)
[1]
RCEsat
collector-emitter
IC = −1 A;
-
220
330
mΩ
saturation resistance
IB = −100 mA
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
PBSS5160T
Nexperia
60 V, 1 A PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pinning
Pin
1
Description
base
Simplified outline
Graphic symbol
3
3
2
emitter
3
collector
1
1
2
2
006aab259
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
-
Description
Version
PBSS5160T
plastic surface-mounted package; 3 leads
SOT23
4. Marking
Table 4.
Marking codes
Type number
Marking code[1]
PBSS5160T
*U6
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
Parameter
Conditions
Min
Max
−80
−60
Unit
V
collector-base voltage open emitter
-
-
VCEO
collector-emitter
voltage
open base
V
VEBO
IC
emitter-base voltage
collector current
open collector
-
-
-
-
−5
V
A
A
A
[1]
[2]
−0.9
−1
ICM
peak collector current t = 1 ms or limited
by Tj(max)
−2
IB
base current
-
-
−300
−1
mA
A
IBM
peak base current
tp ≤ 300 μs; δ ≤ 0.02
PBSS5160T_4
Product data sheet
Rev. 04 — 15 January 2010
2 of 11
©
Nexperia B.V. 2017. All rights reserved
PBSS5160T
Nexperia
60 V, 1 A PNP low VCEsat (BISS) transistor
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
270
Unit
mW
mW
W
[1]
[2]
Ptot
total power dissipation Tamb ≤ 25 °C
-
-
400
[1][3]
-
1.25
150
Tj
junction temperature
ambient temperature
storage temperature
-
°C
Tamb
Tstg
−65
−65
+150
+150
°C
°C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Operated under pulse conditions: duty cycle δ ≤ 20 %, pulse width tp ≤ 10 ms.
mle128
500
P
tot
(mW)
400
(1)
(2)
300
200
100
0
0
40
80
120
160
(°C)
T
amb
(1) FR4 PCB, mounting pad for collector 1 cm2
(2) FR4 PCB, standard footprint
Fig 1. Power derating curves
PBSS5160T_4
Product data sheet
Rev. 04 — 15 January 2010
3 of 11
©
Nexperia B.V. 2017. All rights reserved
PBSS5160T
Nexperia
60 V, 1 A PNP low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol Parameter
Conditions
Min
Typ
Max
465
312
100
Unit
K/W
K/W
K/W
[1]
[2]
Rth(j-a)
thermal resistance from
junction to ambient
in free air
-
-
-
-
-
-
[1][3]
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Operated under pulse conditions: duty cycle δ ≤ 20 %, pulse width tp ≤ 10 ms.
mle127
3
10
δ = 1
Z
th
0.75
0.5
(K/W)
0.33
0.2
2
10
0.1
0.05
0.02
0.01
10
1
0
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance as a function of pulse duration; typical values
PBSS5160T_4
Product data sheet
Rev. 04 — 15 January 2010
4 of 11
©
Nexperia B.V. 2017. All rights reserved
PBSS5160T
Nexperia
60 V, 1 A PNP low VCEsat (BISS) transistor
7. Characteristics
Table 7.
Characteristics
T
amb = 25 °C unless otherwise specified.
Symbol Parameter Conditions
Min
Typ
Max
−100
−50
Unit
nA
ICBO
collector-base cut-off VCB = −60 V; IE = 0 A
-
-
-
-
current
VCB = −60 V; IE = 0 A;
μA
Tj = 150 °C
ICES
IEBO
hFE
collector-emitter
cut-off current
VCE = −60 V; VBE = 0 V
-
-
-
-
−100
−100
nA
nA
emitter-base cut-off VEB = −5 V; IC = 0 A
current
DC current gain
VCE = −5 V
IC = −1 mA
200
150
100
-
350
-
[1]
[1]
IC = −500 mA
IC = −1 A
250
-
160
-
VCEsat
collector-emitter
saturation voltage
IC = −100 mA; IB = −1 mA
−110
−120
−160
−175
mV
mV
IC = −500 mA;
IB = −50 mA
-
[1]
[1]
IC = −1 A; IB = −100 mA
IC = −1 A; IB = −100 mA
-
-
−220
−330
mV
RCEsat
VBEsat
VBEon
fT
collector-emitter
saturation resistance
220
330
mΩ
base-emitter
saturation voltage
IC = −1 A; IB = −50 mA
VCE = −5 V; IC = −1 A
-
−0.95 −1.1
−0.82 −0.9
V
base-emitter
turn-on voltage
-
V
transition frequency VCE = −10 V;
IC = −50 mA; f = 100 MHz
150
-
220
9
-
MHz
pF
Cc
collector capacitance VCB = −10 V; IE = ie = 0 A;
15
f = 1 MHz
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
PBSS5160T_4
Product data sheet
Rev. 04 — 15 January 2010
5 of 11
©
Nexperia B.V. 2017. All rights reserved
PBSS5160T
Nexperia
60 V, 1 A PNP low VCEsat (BISS) transistor
mle124
mle125
600
−2
I
(mA) = − 20 −24 −28 −32 −36
−40
B
I
C
(A)
h
FE
−1.6
(1)
(2)
−16
−12
400
−1.2
−0.8
−8
−4
200
(3)
−0.4
0
−10
0
−1
2
3
I
4
−1
−10
−10
−10
−10
(mA)
0
−1
−2
−3
−4
−5
(V)
V
C
CE
VCE = −5 V
Tamb = 100 °C
Tamb = 25 °C
(1)
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3. DC current gain as a function of collector
current; typical values
Fig 4. Collector current as a function of
collector-emitter voltage; typical values
mle122
mle123
−1.2
−1.2
V
BEsat
(V)
V
(V)
BE
−1
−0.8
−0.6
−0.4
−0.2
(1)
(2)
(3)
(1)
(2)
(3)
−0.8
−0.4
0
−10
−1
2
3
I
4
−1
2
3
4
−1
−10
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
−10
(mA)
I
C
C
VCE = −5 V
(1) Tamb = −55 °C
(2) amb = 25 °C
(3) Tamb = 100 °C
IC/IB = 20
(1) Tamb = −55 °C
(2) amb = 25 °C
(3) Tamb = 100 °C
T
T
Fig 5. Base-emitter voltage as a function of collector
current; typical values
Fig 6. Base-emitter saturation voltage as a function
of collector current; typical values
PBSS5160T_4
Product data sheet
Rev. 04 — 15 January 2010
6 of 11
©
Nexperia B.V. 2017. All rights reserved
PBSS5160T
Nexperia
60 V, 1 A PNP low VCEsat (BISS) transistor
mle126
mle119
−10
−1
V
V
CEsat
(V)
CEsat
(V)
−1
−1
−10
(1)
(2)
−1
−2
(3)
−10
−10
−10
(2) (1)
(3)
−2
−3
−10
−1
2
3
I
4
−1
2
3
4
−10
−1
−10
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
−10
(mA)
C
I
C
IC/IB = 20
(1) Tamb = 100 °C
(2) amb = 25 °C
(3) Tamb = −55 °C
IC/IB = 10
(1) Tamb = 100 °C
(2) amb = 25 °C
(3) Tamb = −55 °C
T
T
Fig 7. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 8. Collector-emitter saturation voltage as a
function of collector current; typical values
mle120
mle121
3
−10
10
R
CEsat
(Ω)
V
CEsat
(V)
2
10
−1
10
−1
−10
(1)
(2)
1
(1)
(3)
(2)
−2
−1
−10
10
−1
2
3
4
−10
−1
−10
−10
−10
−10
(mA)
−1
2
3
I
4
−10
−1
−10
−10
−10
−10
(mA)
I
C
C
Tamb = 25 °C
IC/IB = 20
(1) Tamb = 100 °C
(2) amb = 25 °C
(3) Tamb = −55 °C
(1) IC/IB = 100
(2) IC/IB = 50
T
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 10. Collector-emitter saturation resistance as a
function of collector current; typical values
PBSS5160T_4
Product data sheet
Rev. 04 — 15 January 2010
7 of 11
©
Nexperia B.V. 2017. All rights reserved
PBSS5160T
Nexperia
60 V, 1 A PNP low VCEsat (BISS) transistor
8. Package outline
3.0
2.8
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
0.48
0.38
0.15
0.09
1.9
Dimensions in mm
04-11-04
Fig 11. Package outline SOT23 (TO-236AB)
9. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description
Packing quantity
3000
-215
10000
PBSS5160T
SOT23
4 mm pitch, 8 mm tape and reel
-235
[1] For further information and the availability of packing methods, see Section 12.
PBSS5160T_4
Product data sheet
Rev. 04 — 15 January 2010
8 of 11
©
Nexperia B.V. 2017. All rights reserved
PBSS5160T
Nexperia
60 V, 1 A PNP low VCEsat (BISS) transistor
10. Revision history
Table 9.
Revision history
Document ID
PBSS5160T_4
Modifications:
Release date
Data sheet status
Change notice
Supersedes
20100115
Product data sheet
-
PBSS5160T_N_3
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Table 1 “Quick reference data”: amended
• Section 4 “Marking”: amended
• Figure 4: updated
• Figure 11: superseded by minimized package outline drawing
• Section 9 “Packing information”: added
• Section 11 “Legal information”: updated
PBSS5160T_N_3
PBSS5160T_2
PBSS5160T_1
20080718
20040527
20030623
Product data sheet
Product specification
Product specification
-
-
-
PBSS5160T_2
PBSS5160T_1
-
PBSS5160T_4
Product data sheet
Rev. 04 — 15 January 2010
9 of 11
©
Nexperia B.V. 2017. All rights reserved
PBSS5160T
Nexperia
60 V, 1 A PNP low VCEsat (BISS) transistor
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nexperia.com.
damage. Nexperia accepts no liability for inclusion and/or use of
Nexperia products in such equipment or applications and
11.2 Definitions
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — Nexperia products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nexperia.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by Nexperia. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, Nexperia does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes — Nexperia reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — Nexperia products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
PBSS5160T_4
Product data sheet
Rev. 04 — 15 January 2010
10 of 11
©
Nexperia B.V. 2017. All rights reserved
PBSS5160T
Nexperia
60 V, 1 A PNP low VCEsat (BISS) transistor
13. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Packing information . . . . . . . . . . . . . . . . . . . . . 8
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
3
4
5
6
7
8
9
10
11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
11.1
11.2
11.3
11.4
12
13
Contact information. . . . . . . . . . . . . . . . . . . . . 10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 15 January 2010
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