PBSS2515YPN-Q [NEXPERIA]

15 V low VCEsat NPN/PNP transistorProduction;


型号：	PBSS2515YPN-Q
厂家：	Nexperia
描述：	15 V low VCEsat NPN/PNP transistorProduction
文件：	总11页 (文件大小：238K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PBSS2515YPN-Q

15 V low VCEsat NPN/PNP transistor

17 February 2022

Product data sheet

1. General description

NPN/PNP low V_CEsattransistor pair in a SOT363 (SC-88) very small Surface-Mounted Device

(SMD) plastic package. .

2. Features and benefits

•

Low collector-emitter saturation voltage

•

High current capability

Replaces two SC-70 packaged low V_CEsattransistors on same PCB area

Reduces required PCB area

Reduced pick and place costs.

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

General purpose switching and muting

Low frequency driver circuits

LCD backlighting

Supply line switching circuits

Battery driven equipment (mobile phones, video cameras and hand-held devices).

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor unless otherwise specified; for the PNP transistor with negative polarity

V_CEO

collector-emitter

voltage

open base

I_CM

peak collector current single pulse; t_p≤ 1 ms

TR1 (NPN)

R_CEsat

collector-emitter

saturation resistance

I_C= 500 mA; I_B= 50 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

300

500

mΩ

TR2 (PNP)

R_CEsat

collector-emitter

saturation resistance

I_C= -500 mA; I_B= -50 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

Nexperia

PBSS2515YPN-Q

15 V low VCEsat NPN/PNP transistor

5. Pinning information

Table 2. Pinning information

Symbol

Description

emitter TR1

base TR1

Simplified outline

Graphic symbol

C1 B2

TR2

collector TR2

emitter TR2

base TR2

TR1

B1 C2

sym139

TSSOP6 (SOT363)

collector TR1

6. Ordering information

Table 3. Ordering information

Type number

Package

Name

Description

Version

PBSS2515YPN-Q

TSSOP6

plastic, surface-mounted package; 6 leads; 0.65 mm pitch; SOT363

2.1 mm x 1.25 mm x 0.95 mm body

7. Marking

Table 4. Marking codes

Type number

Marking code[1]

N8%

PBSS2515YPN-Q

[1] % = placeholder for manufacturing site code

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions

Per transistor unless otherwise specified; for the PNP transistor with negative polarity

Min

Max

Unit

V_CBO

V_CEO

V_EBO

I_C

collector-base voltage

open emitter

collector-emitter voltage open base

emitter-base voltage

collector current

open collector

500

I_CM

peak collector current

peak base current

total power dissipation

single pulse; t_p≤ 1 ms

T_amb≤ 25 °C

I_BM

100

200

P_tot

Per device

P_tot

total power dissipation

junction temperature

ambient temperature

storage temperature

T_amb≤ 25 °C

[1]

300

150

°C

T_j

T_amb

T_stg

-65

°C

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

PBSS2515YPN-Q

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Product data sheet

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PBSS2515YPN-Q

15 V low VCEsat NPN/PNP transistor

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

R_th(j-a)

thermal resistance from in free air

junction to ambient

[1]

416

K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor unless otherwise specified; for the PNP transistor with negative polarity

I_CBO

collector-base cut-off

current

V_CB= 15 V; I_E= 0 A; T_amb= 25 °C

V_CB= 15 V; I_E= 0 A; T_j= 150 °C

V_EB= 5 V; I_C= 0 A; T_amb= 25 °C

100

µA

I_EBO

emitter-base cut-off

current

100

TR1 (NPN)

h_FE

DC current gain

V_CE= 2 V; I_C= 10 mA; T_amb= 25 °C

200

150

V_CE= 2 V; I_C= 100 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

V_CE= 2 V; I_C= 500 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

V_CEsat

collector-emitter

saturation voltage

I_C= 10 mA; I_B= 0.5 mA; T_amb= 25 °C

I_C= 200 mA; I_B= 10 mA; T_amb= 25 °C

mΩ

150

250

500

I_C= 500 mA; I_B= 50 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

R_CEsat

V_BEsat

V_BEon

f_T

collector-emitter

saturation resistance

300

base-emitter saturation

voltage

1.1

0.9

base-emitter turn-on

voltage

V_CE= 2 V; I_C= 100 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

transition frequency

V_CE= 5 V; I_C= 100 mA; f = 100 MHz;

T_amb= 25 °C

250

420

4.4

MHz

C_c

collector capacitance

V_CB= 10 V; I_E= 0 A; i_e= 0 A; f = 1 MHz;

T_amb= 25 °C

TR2 (PNP)

h_FE

DC current gain

V_CE= -2 V; I_C= -10 mA; T_amb= 25 °C

200

150

V_CE= -2 V; I_C= -100 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

V_CE= -2 V; I_C= -500 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

PBSS2515YPN-Q

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Product data sheet

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PBSS2515YPN-Q

15 V low VCEsat NPN/PNP transistor

Symbol

Parameter

Conditions

Min

Typ

Max

-25

Unit

mΩ

V_CEsat

collector-emitter

saturation voltage

I_C= -10 mA; I_B= -0.5 mA; T_amb= 25 °C

I_C= -200 mA; I_B= -10 mA; T_amb= 25 °C

-150

-250

500

I_C= -500 mA; I_B= -50 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

R_CEsat

V_BEsat

V_BEon

f_T

collector-emitter

saturation resistance

300

base-emitter saturation

voltage

-1.1

-0.9

base-emitter turn-on

voltage

V_CE= -2 V; I_C= -100 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

transition frequency

V_CE= -5 V; I_C= -100 mA; f = 100 MHz;

T_amb= 25 °C

100

280

MHz

C_c

collector capacitance

V_CB= -10 V; I_E= 0 A; i_e= 0 A;

f = 1 MHz; T_amb= 25 °C

mld687

mld689

600

1200

(1)

(mV)

1000

(1)

(2)

400

200

800

600

(2)

(3)

400

200

- 1

(mA)

V_CE= 2 V

(1) T_amb= 150 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(3) T_amb= 150 °C

Fig. 1. TR1 (NPN): DC current gain as a function of

collector current; typical values

Fig. 2. TR1 (NPN): Base-emitter voltage as a function

of collector current; typical values

PBSS2515YPN-Q

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Product data sheet

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PBSS2515YPN-Q

15 V low VCEsat NPN/PNP transistor

mld691

mld690

1200

BEsat

(mV)

CEsat

(mV)

1000

(1)

(2)

800

600

(1)

(3)

(2)

(3)

400

200

- 1

(mA)

I_C/I_B= 20

(1) T_amb= 150 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

(1) T_amb= 150 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

Fig. 3. TR1 (NPN): Collector-emitter saturation voltage Fig. 4. TR1 (NPN): Base-emitter saturation voltage as a

as a function of collector current; typical values

function of collector current; typical values

mld692

mld688

1200

(3)

(2)

(4)

(1)

CEsat

(mA)

(

)

(5)

(6)

800

(1)

(3)

(7)

(8)

(2)

400

(9)

(10)

-1

(mA)

(V)

I_C/I_B= 20

T_amb= 25 °C

(1) T_amb= 150 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

(1) I_B= 4.6 mA

(2) I_B= 4.14 mA

(3) I_B= 3.68 mA

(4) I_B= 3.22 mA

(5) I_B= 2.76 mA

(6) I_B= 2.3 mA

(7) I_B= 1.84 mA

(8) I_B= 1.38 mA

(9) I_B= 0.92 mA

Fig. 5. TR1 (NPN): Equivalent on-resistance as a

function of collector current; typical values

(10) I_B= 0.46 mA

Fig. 6. TR1 (NPN): Collector current as a function of

collector-emitter voltage; typical values

PBSS2515YPN-Q

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Product data sheet

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PBSS2515YPN-Q

15 V low VCEsat NPN/PNP transistor

mld693

mld695

600

- 1200

(mV)

(1)

- 1000

(1)

(2)

400

200

- 800

- 600

(2)

(3)

- 400

- 200

- 1

- 10

- 1

- 10

- 1

- 10

(mA)

V_CE= −2 V

(1) T_amb= 150 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(3) T_amb= 150 °C

Fig. 7. TR2 (PNP): DC current gain as a function of

collector current; typical values

Fig. 8. TR2 (PNP): Base-emitter voltage as a function

of collector current; typical values

mld697

mld696

- 10

- 1200

BEsat

(mV)

CEsat

(mV)

- 1000

(1)

(2)

- 10

- 800

- 600

(1)

(2)

(3)

- 10

- 400

- 200

- 1

- 10

- 1

- 10

- 1

- 10

(mA)

I_C/I_B= 20

(1) T_amb= 150 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

(1) T_amb= 150 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

Fig. 9. TR2 (PNP): Collector-emitter saturation voltage Fig. 10. TR2 (PNP): Base-emitter saturation voltage as a

as a function of collector current; typical values

function of collector current; typical values

PBSS2515YPN-Q

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PBSS2515YPN-Q

15 V low VCEsat NPN/PNP transistor

mld698

mld694

- 1200

CEsat

(3)

(2)

(4)

(1)

(

)

(mA)

(5)

(6)

- 800

(7)

(8)

(9)

- 400

(1)

(3)

(10)

(2)

-1

-10

-1

-10

- 2

- 4

- 6

- 8

- 10

(V)

(mA)

I_C/I_B= 20

T_amb= 25 °C

(1) T_amb= 150 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

(1) I_B= −7 mA

(2) I_B= −6.3 mA

(3) I_B= −5.6 mA

(4) I_B= −4.9 mA

(5) I_B= −4.2 mA

(6) I_B= −3.5 mA

(7) I_B= −2.8 mA

(8) I_B= −2.1 mA

(9) I_B= −1.4 mA

Fig. 11. TR2 (PNP): Equivalent on-resistance as a

function of collector current; typical values

(10) I_B= −0.7 mA

Fig. 12. TR2 (PNP): Collector current as a function of

collector-emitter voltage; typical values

11. Test information

Quality information

This product has been qualified in accordance with the Automotive Electronics Council (AEC)

standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in

automotive applications.

12. Package outline

2.2

1.8

1.1

0.8

0.45

0.15

2.2 1.35

2.0 1.15

pin 1

index

0.25

0.10

0.3

0.2

0.65

1.3

Dimensions in mm

14-10-03

Fig. 13. Package outline TSSOP6 (SOT363)

PBSS2515YPN-Q

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PBSS2515YPN-Q

15 V low VCEsat NPN/PNP transistor

13. Soldering

2.65

solder lands

solder resist

0.4 (2×)

1.5

2.35

0.6

(4×)

0.5

(4×)

solder paste

0.5

(4×)

0.6

(2×)

occupied area

0.6

(4×)

Dimensions in mm

1.8

sot363_fr

Fig. 14. Reflow soldering footprint for TSSOP6 (SOT363)

1.5

solder lands

solder resist

2.5

0.3

4.5

occupied area

1.5

Dimensions in mm

preferred transport

direction during soldering

1.3

2.45

5.3

sot363_fw

Fig. 15. Wave soldering footprint for TSSOP6 (SOT363)

PBSS2515YPN-Q

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PBSS2515YPN-Q

15 V low VCEsat NPN/PNP transistor

14. Revision history

Table 8. Revision history

Data sheet ID

Release date

Data sheet status

Change notice

Supersedes

PBSS2515YPN-Q v.1 20220217

Product data sheet

PBSS2515YPN-Q

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Product data sheet

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PBSS2515YPN-Q

15 V low VCEsat NPN/PNP transistor

equipment, nor in applications where failure or malfunction of an Nexperia

product can reasonably be expected to result in personal injury, death or

severe property or environmental damage. Nexperia and its suppliers accept

no liability for inclusion and/or use of Nexperia products in such equipment or

applications and therefore such inclusion and/or use is at the customer's own

risk.

15. Legal information

Data sheet status

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Document status Product

Definition

[1][2]

status [3]

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no representation

or warranty that such applications will be suitable for the specified use

without further testing or modification.

Objective [short]

data sheet

Development

This document contains data from

the objective specification for

product development.

Preliminary [short]

data sheet

Qualification

Production

This document contains data from

the preliminary specification.

Customers are responsible for the design and operation of their applications

and products using Nexperia products, and Nexperia accepts no liability for

any assistance with applications or customer product design. It is customer’s

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and fit for the customer’s applications and products planned, as well as

for the planned application and use of customer’s third party customer(s).

Customers should provide appropriate design and operating safeguards to

minimize the risks associated with their applications and products.

Product [short]

data sheet

This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the internet at https://www.nexperia.com.

Nexperia does not accept any liability related to any default, damage, costs

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and shall have no liability for the consequences of use of such information.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

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given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

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Short data sheet — A short data sheet is an extract from a full data sheet

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PBSS2515YPN-Q

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Product data sheet

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PBSS2515YPN-Q

15 V low VCEsat NPN/PNP transistor

Contents

1. General description......................................................1

2. Features and benefits.................................................. 1

3. Applications.................................................................. 1

4. Quick reference data....................................................1

5. Pinning information......................................................2

6. Ordering information....................................................2

7. Marking..........................................................................2

8. Limiting values............................................................. 2

9. Thermal characteristics............................................... 3

10. Characteristics............................................................3

11. Test information..........................................................7

12. Package outline.......................................................... 7

13. Soldering..................................................................... 8

14. Revision history..........................................................9

15. Legal information......................................................10

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 17 February 2022

PBSS2515YPN-Q

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Product data sheet

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PBSS2515YPN-Q [NEXPERIA]

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