PBSM5240PF_技术文档

PBSM5240PF

40 V, 2 A PNP low V_CEsat(BISS) transistor with N-channel

Trench MOSFET

Rev. 2 — 20 April 2011

Product data sheet

1. Product profile

1.1 General description

Combination of PNP low V_CEsatBreakthrough In Small Signal (BISS) transistor and

N-channel Trench MOSFET. The device is housed in a leadless medium power SOT1118

Surface-Mounted Device (SMD) plastic package.

1.2 Features and benefits

Very low collector-emitter saturation voltage V_CEsat

High collector current capability I_Cand I_CM

High collector current gain (h_FE) at high I_C

High energy efficiency due to less heat generation

Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications

Loadswitch

Battery-driven devices

Charging circuits

Power management

Power switches (e.g. motors, fans)

1.4 Quick reference data

Table 1.

Quick reference data

Symbol Parameter

Conditions

Min

Typ

Max Unit

PNP low V_CEsat(BISS) transistor

V_CEO

I_C

collector-emitter voltage open base

collector current

-

−40

−1.8

−2

V

A

[1]

[1][5]

I_CRM

repetitive peak collector

current

[1]

[2]

I_CM

peak collector current

single pulse; t_p≤ 1 ms

-

−3

A

R_CEsat

collector-emitter

saturation resistance

I_C= −500 mA;

I_B= −50 mA

240

340

mΩ

PBSM5240PF

Nexperia

40 V, 2 A PNP BISS/Trench MOSFET module

Table 1.

Quick reference data …continued

Symbol Parameter

Conditions

Min

Typ

Max Unit

N-channel Trench MOSFET

V_DS

V_GS

I_D

drain-source voltage

gate-source voltage

drain current

T_amb= 25 °C

-

30

V

A

±8

[3]

[4]

T_amb= 25 °C;

V_GS= 10 V

0.66

R_DSon

drain-source on-state

resistance

T_j= 25 °C; V_GS= 4.5 V;

I_D= 0.2 A

-

370

580

mΩ

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm².

[2] Pulse test: t_p≤ 300 μs; δ ≤ 0.02.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm².

[4] Pulse test: t_p≤ 300 μs; δ ≤ 0.01.

[5] Pulse test: t_p≤ 20 ms; δ ≤ 0.10.

2. Pinning information

Table 2.

Pinning

1

Description

emitter

base

Simplified outline

Graphic symbol

6, 7

5

4

6

5

4

2

3

drain

7

8

4

source

gate

5

1

2

3

1

2

3, 8

6

collector

drain

Transparent top view

017aaa079

7

8

3. Ordering information

Table 3.

Ordering information

Type number

Package

Name

Description

Version

PBSM5240PF

HUSON6 plastic thermal enhanced ultra thin small outline

SOT1118

package; no leads; 6 terminals; body 2 × 2 × 0.65 mm

4. Marking

Table 4.

Marking codes

Type number

PBSM5240PF

Marking code

1G

PBSM5240PF

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©

Product data sheet

Rev. 2 — 20 April 2011

2 of 20

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40 V, 2 A PNP BISS/Trench MOSFET module

5. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

PNP low V_CEsat(BISS) transistor

V_CBO

V_CEO

V_EBO

I_C

collector-base voltage

open emitter

-

−40

−5

V

A

collector-emitter voltage open base

emitter-base voltage

collector current

open collector

[1]

−1.8

−2

[1][4]

I_CRM

repetitive peak collector

current

[1]

I_CM

peak collector current

single pulse;

-

−3

A

t_p≤ 1 ms

[1]

I_B

base current

-

−300

−1

mA

A

I_BM

peak base current

single pulse;

t_p≤ 1 ms

[1]

[2]

P_tot

total power dissipation

T_amb≤ 25 °C

-

1.1

W

1.25

N-channel Trench MOSFET

V_DS

V_DG

drain-source voltage

T_amb= 25 °C

-

30

V

drain-gate voltage

T_amb= 25 °C;

R_GS= 20 kΩ

V_GS

I_D

gate-source voltage

drain current

T_amb= 25 °C

V_GS= 10 V

-

±8

V

[3]

T_amb= 25 °C

T_amb= 100 °C

-

660

420

3.56

mA

A

I_DM

peak drain current

T_amb= 25 °C;

single pulse;

t_p≤ 10 μs

[3]

P_tot

total power dissipation

T_amb= 25 °C

-

760

660

mW

mA

Source-drain diode

I_S

source current

T_amb= 25 °C

Per device

T_j

junction temperature

ambient temperature

storage temperature

-

150

°C

T_amb

T_stg

−55

−65

+150

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm².

[2] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm²

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm².

[4] Pulse test: t_p≤ 20 ms; δ ≤ 0.10.

PBSM5240PF

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©

Product data sheet

Rev. 2 — 20 April 2011

3 of 20

PBSM5240PF

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40 V, 2 A PNP BISS/Trench MOSFET module

006aac608

1.4

P

tot

(1)

(2)

(W)

1.2

1.0

0.8

0.6

0.4

0.2

0.0

(3)

(4)

–75

–25

25

75

125

175

(°C)

T

amb

(1) FR4 PCB, 4-layer copper, mounting pad for collector 1 cm²

(2) FR4 PCB, single-sided copper, mounting pad for collector 6 cm²

(3) FR4 PCB, single-sided copper, mounting pad for collector 1 cm²

(4) FR4 PCB, single-sided copper, standard footprint

Fig 1. BISS transistor: Power derating curves

03aa17

03aa25

120

P

der

I

der

(%)

80

40

0

50

100

150

200

0

50

100

150

200

T

sp

(°C)

T

sp

(°C)

P_tot

-----------------------

I_D

-------------------

P_der

=

× 100 %

I_der

=

× 100 %

P_tot(25°C)

I_D(25°C)

Fig 2. MOSFET: Normalized total power dissipation

as a function of solder point temperature

Fig 3. MOSFET: Normalized continuous drain current

as a function of solder point temperature

PBSM5240PF

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©

Product data sheet

Rev. 2 — 20 April 2011

4 of 20

PBSM5240PF

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40 V, 2 A PNP BISS/Trench MOSFET module

006aac609

10

I

D

Limit R

= V /I

DS D

(A)

DSon

1

(1)

(2)

(3)

–1

10

(4)

(5)

–2

10

–1

2

1

10

V

(V)

DS

I_DM= single pulse

(1) t_p= 1 ms

(2) DC; T_sp= 25 °C

(3) t_p= 10 ms

(4) t_p= 100 ms

(5) DC; T_amb= 25 °C; drain mounting pad 1 cm²

Fig 4. MOSFET: Safe operating area; junction to ambient; continuous and peak drain currents as a function of

drain-source voltage

PBSM5240PF

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Product data sheet

Rev. 2 — 20 April 2011

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PBSM5240PF

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40 V, 2 A PNP BISS/Trench MOSFET module

6. Thermal characteristics

Table 6.

Thermal characteristics

Symbol Parameter

PNP low V_CEsat(BISS) transistor

Conditions

Min

Typ

Max

Unit

[1]

[2]

R_th(j-a)

thermal resistance from

junction to ambient

in free air

-

115

100

K/W

N-channel Trench MOSFET

[3]

R_th(j-a)

thermal resistance from

junction to ambient

in free air

-

165

K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm².

[2] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm²

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm².

006aac610

3

10

Z

th(j-a)

duty cycle = 1

(K/W)

0.75

0.5

0.33

2

10

0.2

0.1

0.05

10

0.02

0.01

0

1

–5

–4

–3

–2

–1

2

3

10

1

10

t

p

(s)

FR4 PCB, single-sided copper, standard footprint

Fig 5. PNP transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;

typical values

PBSM5240PF

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©

Product data sheet

Rev. 2 — 20 April 2011

6 of 20

PBSM5240PF

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40 V, 2 A PNP BISS/Trench MOSFET module

006aac611

3

10

Z

th(j-a)

(K/W)

duty cycle = 1

2

0.75

0.5

10

0.33

0.2

0.1

10

0.05

0.02

0.01

0

1

–5

–4

–3

–2

–1

2

3

10

1

10

t

p

(s)

FR4 PCB, single-sided copper, mounting pad for collector 1 cm²

Fig 6. PNP transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;

typical values

006aac612

3

10

Z

th(j-a)

(K/W)

duty cycle = 1

2

10

0.75

0.5

0.33

0.2

0.1

10

0.05

0.02

0.01

0

1

–5

–4

–3

–2

–1

2

3

10

1

10

t

p

(s)

FR4 PCB, single-sided copper, mounting pad for collector 6 cm²

Fig 7. PNP transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;

typical values

PBSM5240PF

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©

Product data sheet

Rev. 2 — 20 April 2011

7 of 20

PBSM5240PF

Nexperia

40 V, 2 A PNP BISS/Trench MOSFET module

006aac613

3

10

Z

th(j-a)

(K/W)

2

duty cycle = 1

10

0.75

0.5

0.33

0.2

10 0.1

0.05

0.01

0.02

0

1

–5

–4

–3

–2

–1

2

3

10

1

10

t

p

(s)

FR4 PCB, 4-layer copper, mounting pad for collector 1 cm²

Fig 8. PNP transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;

typical values

006aac614

3

10

Z

th(j-a)

(K/W)

duty cycle = 1

0.75

2

10

0.5

0.33

0.1

0.25

0.2

10

0

0.05

0.02

0.01

1

–3

–2

–1

2

3

10

1

10

t

p

(s)

FR4 PCB, single-sided copper, mounting pad for drain 1 cm²

Fig 9. MOSFET: Transient thermal impedance from junction to ambient as a function of pulse duration; typical

values

PBSM5240PF

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©

Product data sheet

Rev. 2 — 20 April 2011

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40 V, 2 A PNP BISS/Trench MOSFET module

7. Characteristics

Table 7.

Characteristics for PNP low V_CEsattransistor

T_amb= 25 °C unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max Unit

I_CBO

collector-base

cut-off current

V_CB= −40 V; I_E= 0 A

-

−100 nA

V_CB= −40 V; I_E= 0 A;

T_j= 150 °C

−50

μA

I_CEO

I_EBO

h_FE

collector-emitter cut-off V_CE= −30 V; I_B= 0 A

current

-

−100 nA

emitter-base cut-off

current

V_EB= −5 V; I_C= 0 A

[1]

DC current gain

V_CE= −5 V

I_C= −1 mA

300

-

I_C= −100 mA

300

-

800

I_C= −500 mA

200

-

I_C= −1 A

140

-

[1]

V_CEsat

collector-emitter

saturation voltage

I_C= −100 mA; I_B= −1 mA

I_C= −500 mA; I_B= −50 mA

I_C= −1 A; I_B= −100 mA

I_C= −500 mA; I_B= −50 mA

-

−85

−140 mV

−120 −170 mV

−200 −310 mV

R_CEsat

V_BEsat

V_BEon

f_T

collector-emitter

saturation resistance

240

340

−1.1

−1

mΩ

[1]

base-emitter saturation I_C= −1 A; I_B= −100 mA

voltage

-

V

base-emitter turn-on

voltage

V_CE= −5 V; I_C= −1 A

-

V

transition frequency

V_CE= −10 V; I_C= −50 mA;

f = 100 MHz

150

-

MHz

pF

C_c

collector capacitance

V_CB= −10 V; I_E= i_e= 0 A;

12

f = 1 MHz

[1] Pulse test: t_p≤ 300 μs; δ ≤ 0.02.

PBSM5240PF

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©

Product data sheet

Rev. 2 — 20 April 2011

9 of 20

PBSM5240PF

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40 V, 2 A PNP BISS/Trench MOSFET module

006aaa465

006aaa469

1200

−2.4

I

(mA) = −24

I

B

h

C

FE

−21.6

(A)

−19.2

−16.8

−14.4

−12

800

400

0

−1.6

(1)

(2)

−9.6

−7.2

−4.8

−2.4

−0.8

(3)

0

−1

2

3

4

−10

−1

−10

(mA)

0

−1

−2

−3

−4

−5

(V)

I

V

C

CE

V_CEsat= −5 V

T_amb= 25 °C

(1) T_amb= 100 °C

(2)

T_amb= 25 °C

(3) T_amb= −55 °C

Fig 10. PNP transistor: DC current gain as a function

of collector current; typical values

Fig 11. PNP transistor: Collector current as a function

of collector-emitter voltage; typical values

006aac615

006aaa468

–1.6

−1.3

V

BE

V

(V)

BEsat

(V)

–1.2

−0.9

(1)

(2)

(3)

–0.8

–0.4

–0.0

(2)

−0.5

(3)

−0.1

–1

2

3

I

4

−1

2

3

I

4

–10

–1

–10

(mA)

−10

−1

−10

(mA)

C

V_CEsat= −5 V

I_C/I_B= 20

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(3)

T_amb= 100 °C

(3) T_amb= 100 °C

Fig 12. PNP transistor: Base-emitter voltage as a

function of collector current; typical values

Fig 13. PNP transistor: Base-emitter saturation

voltage as a function of collector current;

typical values

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Product data sheet

Rev. 2 — 20 April 2011

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PBSM5240PF

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40 V, 2 A PNP BISS/Trench MOSFET module

006aaa466

006aaa471

−1

−10

V

CEsat

(V)

V

CEsat

−1

(V)

−1

−2

−10

(1)

(2)

(1)

(2)

(3)

−2

−3

−10

−1

2

3

4

−1

2

3

4

−10

−1

−10

−1

−10

I (mA)

C

I

(mA)

C

I_C/I_B= 20

T_amb= 25 °C

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(1) I_C/I_B= 100

(2) I_C/I_B= 50

(3) I_C/I_B= 10

(3)

T_amb= −55 °C

Fig 14. PNP transistor: Collector-emitter saturation

voltage as a function of collector current;

typical values

Fig 15. PNP transistor: Collector-emitter saturation

voltage as a function of collector current;

typical values

006aaa470

006aaa472

3

10

R

CEsat

R

CEsat

(Ω)

2

10

(1)

(2)

(3)

10

(1)

(2)

1

(3)

−1

−10

−1

−10

10

−1

2

3

4

−1

2

3

4

−1

−10

(mA)

−1

−10

I (mA)

C

I

C

I_C/I_B= 20

T_amb= 25 °C

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(1) I_C/I_B= 100

(2) I_C/I_B= 50

(3) I_C/I_B= 10

(3)

T_amb= −55 °C

Fig 16. PNP transistor: Collector-emitter saturation

resistance as a function of collector current;

typical values

Fig 17. PNP transistor: Collector-emitter saturation

resistance as a function of collector current;

typical values

PBSM5240PF

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Product data sheet

Rev. 2 — 20 April 2011

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PBSM5240PF

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40 V, 2 A PNP BISS/Trench MOSFET module

Table 8.

Characteristics for N-channel Trench MOSFET

T_j= 25 °C unless otherwise specified.

Symbol Parameter

Static characteristics

Conditions

Min

Typ

Max Unit

V_(BR)DSS

drain-source breakdown I_D= 10 μA; V_GS= 0 V

voltage

T_j= 25 °C

30

27

-

V

T_j= −55 °C

V_GS(th)

gate-source threshold

voltage

I_D= 250 μA; V_DS= V_GS

T_j= 25 °C

0.45 0.7

0.95

-

V

T_j= 150 °C

0.25

-

T_j= −55 °C

1.15

I_DSS

drain leakage current

gate leakage current

V_DS= 30 V; V_GS= 0 V

T_j= 25 °C

-

1

μA

T_j= 150 °C

-

100

I_GSS

V_GS= ±8 V; V_DS= 0 V

V_GS= 4.5 V; I_D= 0.2 A

T_j= 25 °C

10

±100 nA

[1]

R_DSon

drain-source on-state

resistance

-

370

663

440

540

580

985

690

920

mΩ

T_j= 150 °C

V_GS= 2.5 V; I_D= 0.1 A

V_GS= 1.8 V; I_D= 75 mA

Dynamic characteristics

Q_G(tot)

Q_GS

Q_GD

C_iss

total gate charge

gate-source charge

gate-drain charge

input capacitance

output capacitance

I_D= 1 A; V_DS= 15 V;

V_GS= 4.5 V

-

0.89

0.1

0.2

43

-

nC

pF

V_GS= 0 V; V_DS= 25 V;

f = 1 MHz

C_oss

C_rss

7.7

4.8

reverse transfer

capacitance

t_d(on)

t_r

t_d(off)

t_f

turn-on delay time

rise time

V_DS= 15 V; R_L= 15 Ω;

V_GS= 10 V; R_G= 6 Ω

-

4.0

7.5

18

-

ns

turn-off delay time

fall time

4.5

Source-drain diode

V_SD

source-drain voltage

I_S= 0.3 A; V_GS= 0 V

-

0.76 1.2

V

[1] Pulse test: t_p≤ 300 μs; δ ≤ 0.01.

PBSM5240PF

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©

Product data sheet

Rev. 2 — 20 April 2011

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PBSM5240PF

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40 V, 2 A PNP BISS/Trench MOSFET module

03an94

03am43

−3

10

2.5

I_D

4.5

3

2.5

(A)

I

D

(A)

2

1.5

1

2

−4

−5

−6

10

min

typ

max

1.8

V_GS(V) = 1.5

0.5

0

0.5

1

1.5

2

0

0.4

0.8

1.2

V

_DS(V)

V

GS

(V)

T_j= 25 °C

T_j= 25 °C; V_DS= 5 V

Fig 18. MOSFET: Output characteristics: drain current

as a function of drain-source voltage;

typical values

Fig 19. MOSFET: Sub-threshold drain current as a

function of gate-source voltage

006aac616

03an96

1.0

2.5

R

I_D

(A)

2

DSon

(Ω)

0.8

0.6

0.4

0.2

0.0

(1)

(2)

T_j= 150 °C

25 °C

1.5

1

(3)

(4)

(5)

0.5

0

0.0

0.5

1.0

1.5

2.0

2.5

0

1

2

3

4

V

_GS(V)

I

D

(A)

T_j= 25 °C

V_DS> I_D× R_DSon

(1) V_GS= 1.8 V

(2) V_GS= 2.0 V

(3)

V_GS= 2.5 V

(4) V_GS= 3.0 V

(5) V_GS= 4.5 V

Fig 20. MOSFET: Drain-source on-state resistance as

a function of drain current; typical values

Fig 21. MOSFET: Transfer characteristics: drain

current as a function of gate-source voltage;

typical values

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Product data sheet

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40 V, 2 A PNP BISS/Trench MOSFET module

03aj65

006aac618

1.2

1.8

a

V

GS(th)

(V)

0.9

0.6

0.3

0

max

typ

1.2

min

0.6

0.0

−60

0

60

120

180

–60

0

60

120

180

T (°C)

j

T (°C)

j

I_D= 1 mA; V_DS= V_GS

R_DSon

a =

-----------------------------

R_DSon(25°C)

Fig 22. MOSFET: Normalized drain-source on-state

resistance as a function of junction

temperature; typical values

Fig 23. MOSFET: Gate-source threshold voltage as a

function of junction temperature

03an98

03an99

10²

5

I_D= 1 A

V_GS

(V)

T_j= 25 °C

V_DS= 15 V

C

(pF)

C_iss

4

3

2

1

0

10

C_oss

C_rss

1

10^-1

1

10

10²

0

0.2

0.4

0.6

0.8

1

V_DS(V)

Q_G(nC)

f = 1 MHz; V_GS= 0 V

Fig 24. MOSFET: Input, output and reverse transfer

capacitances as a function of drain-source

voltage; typical values

Fig 25. MOSFET: Gate-source voltage as a function of

gate charge; typical values

PBSM5240PF

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Product data sheet

Rev. 2 — 20 April 2011

14 of 20

PBSM5240PF

Nexperia

40 V, 2 A PNP BISS/Trench MOSFET module

03an97

1

V

GS

= 0 V

I

S

(A)

0.8

0.6

0.4

0.2

0

V

DS

I

D

V

GS(pl)

V

GS(th)

V

GS

150 °C

Q

T = 25 °C

GS1

GS2

j

Q

GD

GS

Q

G(tot)

0

0.2

0.4

0.6

0.8

1

V

SD

(V)

017aaa137

Fig 26. MOSFET: Gate charge waveform definitions

Fig 27. MOSFET: Source current as a function of

source-drain voltage; typical values

8. Package outline

2.1

1.9

0.65

max

1.1

0.9

0.04

max

0.77

0.57

(2×)

3

4

6

0.65

(4×)

2.1

0.54

1.9

0.35

0.25

(6×)

0.44

1

(2×)

0.3

0.2

Dimensions in mm

10-05-31

Fig 28. Package outline SOT1118

9. Packing information

Table 9.

Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.^[1]

Type number Package

Description

Packing quantity

3000

PBSM5240PF SOT1118

4 mm pitch, 8 mm tape and reel

-115

[1] For further information and the availability of packing methods, see Section 13.

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Product data sheet

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PBSM5240PF

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40 V, 2 A PNP BISS/Trench MOSFET module

10. Soldering

2.1

0.65

0.49

0.65

0.49

0.3 0.4

(6×) (6×)

solder lands

0.875

solder paste

1.05 1.15

2.25

(2×) (2×)

solder resist

occupied area

Dimensions in mm

0.35

0.72

(6×)

(2×)

0.45

0.82

(6×)

(2×)

sot1118_fr

Reflow soldering is the only recommended soldering method.

Fig 29. Reflow soldering footprint SOT1118

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Product data sheet

Rev. 2 — 20 April 2011

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PBSM5240PF

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40 V, 2 A PNP BISS/Trench MOSFET module

11. Revision history

Table 10. Revision history

Document ID

PBSM5240PF v.2

Modifications:

Release date

20110420

Data sheet status

Change notice

Supersedes

Product data sheet

-

PBSM5240PF v.1

• Section 1.1 “General description”: updated.

• Section 2 “Pinning information”: updated.

• Table 1, 5, 6, 7 and 8: updated according to the last measurements.

• Figure 1 to 27: added.

• Section 12 “Legal information”: updated.

PBSM5240PF v.1

20100825

Preliminary data sheet

-

PBSM5240PF

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Product data sheet

Rev. 2 — 20 April 2011

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PBSM5240PF

Nexperia

40 V, 2 A PNP BISS/Trench MOSFET module

12. Legal information

12.1 Data sheet status

Document status^[1][2]

Product status^[3]

Development

Definition

Objective [short] data sheet

This document contains data from the objective specification for product development.

This document contains data from the preliminary specification.

This document contains the product specification.

Preliminary [short] data sheet Qualification

Product [short] data sheet Production

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term ‘short data sheet’ is explained in section “Definitions”.

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nexperia.com.

malfunction of a Nexperia product can reasonably be expected

12.2 Definitions

to result in personal injury, death or severe property or environmental

damage. Nexperia accepts no liability for inclusion and/or use of

Nexperia products in such equipment or applications and

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. Nexperia does not give any

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local Nexperia sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall prevail.

Customers are responsible for the design and operation of their applications

and products using Nexperia products, and Nexperia

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the Nexperia

product is suitable and fit for the customer’s applications and

products planned, as well as for the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

Nexperia and its customer, unless Nexperia and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the Nexperia product is

deemed to offer functions and qualities beyond those described in the

Product data sheet.

Nexperia does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessary

testing for the customer’s applications and products using Nexperia

products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). Nexperia does not accept any liability in this respect.

12.3 Disclaimers

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, Nexperia does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall Nexperia be liable for any indirect, incidental,

punitive, special or consequential damages (including - without limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Terms and conditions of commercial sale — Nexperia

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nexperia.com/profile/terms, unless otherwise

agreed in a valid written individual agreement. In case an individual

agreement is concluded only the terms and conditions of the respective

agreement shall apply. Nexperia hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of Nexperia products by customer.

Notwithstanding any damages that customer might incur for any reason

whatsoever, Nexperia’s aggregate and cumulative liability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of Nexperia.

Right to make changes — Nexperia reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

No offer to sell or license — Nothing in this document may be interpreted or

construed as an offer to sell products that is open for acceptance or the grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from national authorities.

Suitability for use — Nexperia products are not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

PBSM5240PF

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©

Product data sheet

Rev. 2 — 20 April 2011

18 of 20

PBSM5240PF

Nexperia

40 V, 2 A PNP BISS/Trench MOSFET module

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

Nexperia’s specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies Nexperia for any

liability, damages or failed product claims resulting from customer design and

use of the product for automotive applications beyond Nexperia’s

standard warranty and Nexperia’s product specifications.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific Nexperia product is automotive qualified,

the product is not suitable for automotive use. It is neither qualified nor tested

in accordance with automotive testing or application requirements. Nexperia

accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equipment or applications.

12.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and standards, customer

(a) shall use the product without Nexperia’s warranty of the

13. Contact information

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

PBSM5240PF

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©

Product data sheet

Rev. 2 — 20 April 2011

19 of 20

PBSM5240PF

Nexperia

40 V, 2 A PNP BISS/Trench MOSFET module

14. Contents

1

Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1

1.2

1.3

1.4

General description . . . . . . . . . . . . . . . . . . . . . 1

Features and benefits. . . . . . . . . . . . . . . . . . . . 1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2

Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

Ordering information. . . . . . . . . . . . . . . . . . . . . 2

Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . 6

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 9

Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15

Packing information . . . . . . . . . . . . . . . . . . . . 15

Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Revision history. . . . . . . . . . . . . . . . . . . . . . . . 17

3

4

5

6

7

8

9

10

11

12

Legal information. . . . . . . . . . . . . . . . . . . . . . . 18

Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18

Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 19

12.1

12.2

12.3

12.4

13

14

Contact information. . . . . . . . . . . . . . . . . . . . . 19

Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 20 April 2011


型号：	PBSM5240PF
厂家：	Nexperia
描述：	40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFETProduction 开关光电二极管晶体管
文件：	总20页 (文件大小：1391K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PBSM5240PF [NEXPERIA]

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