NX138BKS [NEXPERIA]
60 V, dual N-channel Trench MOSFETProduction;型号: | NX138BKS |
厂家: | Nexperia |
描述: | 60 V, dual N-channel Trench MOSFETProduction |
文件: | 总15页 (文件大小:754K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NX138BKS
60 V, dual N-channel Trench MOSFET
15 June 2016
Product data sheet
1. General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
•
Low threshold voltage
•
•
•
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
•
•
•
•
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
VDS
VGS
ID
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
60
V
-20
-
20
V
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; ID = 200 mA; Tj = 25 °C
[1]
210
mA
Static characteristics (per transistor)
RDSon
drain-source on-state
resistance
-
2.1
3.5
Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm2.
Nexperia
NX138BKS
60 V, dual N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
D2
D1
S1
G1
D2
S2
G2
D1
source TR1
gate TR1
6
5
4
3
2
3
drain TR2
source TR2
gate TR2
G1
G2
1
2
4
TSSOP6 (SOT363)
5
S1
S2
6
drain TR1
017aaa256
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
SOT363
NX138BKS
TSSOP6
plastic surface-mounted package; 6 leads
©
NX138BKS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
15 June 2016
2 / 15
Nexperia
NX138BKS
60 V, dual N-channel Trench MOSFET
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor
VDS
VGS
ID
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
60
V
-20
20
V
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; Tamb = 100 °C
VGS = 10 V; Tsp = 25 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
[1]
[1]
-
-
-
-
-
-
-
210
135
330
855
285
320
860
mA
mA
mA
mA
mW
mW
mW
IDM
Ptot
peak drain current
total power dissipation
[2]
[1]
Tsp = 25 °C
Per device
Tj
junction temperature
ambient temperature
storage temperature
-55
-55
-65
150
150
150
°C
°C
°C
Tamb
Tstg
Source-drain diode
IS source current
Tamb = 25 °C
[1]
-
170
mA
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
017aaa123
017aaa124
120
120
P
I
der
der
(%)
(%)
80
80
40
40
0
- 75
0
- 75
- 25
25
75
125
175
- 25
25
75
125
175
T (°C)
j
T (°C)
j
Fig. 1. MOSFET transistor: Normalized total power
dissipation as a function of junction temperature
Fig. 2. MOSFET transistor: Normalized continuous drain
current as a function of junction temperature
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NX138BKS
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Nexperia B.V. 2017. All rights reserved
Product data sheet
15 June 2016
3 / 15
Nexperia
NX138BKS
60 V, dual N-channel Trench MOSFET
aaa-023329
1
t
=
p
10 µs
I
D
(A)
Limit R
= V /I
DS
DSon
D
100 µs
-1
-2
-3
10
1 ms
DC; T = 25 °C
sp
10 ms
DC; T
= 25 °C;
100 ms
amb
drain mounting pad 1 cm
2
10
10
-1
2
10
1
10
10
V
(V)
DS
IDM = single pulse
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
[2]
-
-
380
340
440
390
K/W
K/W
Rth(j-sp)
thermal resistance
from junction to solder
point
-
125
145
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
©
NX138BKS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
15 June 2016
4 / 15
Nexperia
NX138BKS
60 V, dual N-channel Trench MOSFET
aaa-023330
3
10
duty cycle = 1
Z
th(j-a)
(K/W)
0.75
0.50
0.25
0.33
0.20
2
10
0.10
0.05
0.02
0.01
0
10
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-023331
3
10
duty cycle = 1
Z
th(j-a)
(K/W)
0.75
0.50
0.33
0.25
0.20
2
10
0.10
0.05
0.02
0.01
0
10
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 1 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
NX138BKS
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Nexperia B.V. 2017. All rights reserved
Product data sheet
15 June 2016
5 / 15
Nexperia
NX138BKS
60 V, dual N-channel Trench MOSFET
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics (per transistor)
V(BR)DSS
VGSth
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
60
-
-
V
V
gate-source threshold ID = 250 µA; VDS=VGS; Tj = 25 °C
voltage
0.5
1
1.5
IDSS
IGSS
drain leakage current
gate leakage current
VDS = 60 V; VGS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
VGS = 5 V; VDS = 0 V; Tj = 25 °C
VGS = -5 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 200 mA; Tj = 25 °C
VGS = 10 V; ID = 200 mA; Tj = 150 °C
VGS = 5 V; ID = 170 mA; Tj = 25 °C
VGS = 2.5 V; ID = 75 mA; Tj = 25 °C
VDS = 10 V; ID = 200 mA; Tj = 25 °C
-
-
-
-
-
-
-
-
-
-
-
-
-
1
µA
µA
µA
µA
µA
µA
µA
Ω
-
10
-10
1
-
-
-
-1
-
0.3
-0.3
3.5
7.2
3.8
5
-
RDSon
drain-source on-state
resistance
2.1
4.3
2.2
2.6
0.7
Ω
Ω
Ω
gfs
forward
-
S
transconductance
Dynamic characteristics (per transistor)
QG(tot)
QGS
QGD
Ciss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
VDS = 30 V; ID = 200 mA; VGS = 10 V;
Tj = 25 °C
-
-
-
-
-
-
0.5
0.12
0.12
20
0.7
nC
nC
nC
pF
pF
pF
-
-
-
-
-
VDS = 30 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
Coss
Crss
3.1
2
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 30 V; ID = 200 mA; VGS = 10 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
8
-
-
-
-
ns
ns
ns
ns
8
turn-off delay time
fall time
13
5
Source-drain diode (per transistor)
VSD
source-drain voltage
IS = 200 mA; VGS = 0 V; Tj = 25 °C
-
0.9
1.2
V
©
NX138BKS
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Nexperia B.V. 2017. All rights reserved
Product data sheet
15 June 2016
6 / 15
Nexperia
NX138BKS
60 V, dual N-channel Trench MOSFET
aaa-023332
aaa-023333
-3
-4
-5
-6
0.8
10
D
V
= 10 V
3.5 V
4.5 V
GS
I
D
(A)
2.5 V
I
(A)
0.6
min
typ
max
10
2.2 V
0.4
0.2
0
2.0 V
1.8 V
10
10
0
1
2
3
4
5
0
0.5
1
1.5
2
V
(V)
V
(V)
DS
GS
Tj = 25 °C
VDS = 5 V
Tj = 25 °C
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig. 7. Sub-threshold drain current as a function of gate-
source voltage
aaa-023334
aaa-023335
8
8
R
1.8 V
2.0 V
2.2 V
2.5 V
DSon
(Ω)
R
DSon
(Ω)
7
6
6
5
4
3
2
1
0
T = 150 °C
j
4
2
0
T = 25 °C
j
3 V
4.5 V
= 10 V
V
GS
0
0.2
0.4
0.6
0.8
0
5
10
I
(A)
V
(V)
GS
D
Tj = 25 °C
ID = 0.2 A
Fig. 8. Drain-source on-state resistance as a function of Fig. 9. Drain-source on-state resistance as a function of
drain current; typical values
gate-source voltage; typical values
©
NX138BKS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
15 June 2016
7 / 15
Nexperia
NX138BKS
60 V, dual N-channel Trench MOSFET
aaa-023336
aaa-023337
0.6
2.5
2
a
I
D
(A)
0.4
1.5
1
0.2
T
T
j = 25 °C
j = 150 °C
0.5
0
0
-60
0
1
2
3
4
0
60
120
180
V
(V)
T (°C)
j
GS
VDS > ID x RDSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig. 11. Normalized drain-source on-state resistance as
a function of junction temperature; typical values
aaa-023338
aaa-023339
2
2
10
V
GS(th)
(V)
C
(pF)
max
typ
1.5
1
C
iss
10
min
C
0.5
0
oss
C
rss
1
-1
10
2
-60
0
60
120
180
1
10
10
T (°C)
j
V
(V)
DS
ID = 250 μA; VDS = VGS
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical values
©
NX138BKS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
15 June 2016
8 / 15
Nexperia
NX138BKS
60 V, dual N-channel Trench MOSFET
aaa-023340
10
V
DS
V
GS
(V)
I
D
8
6
4
2
0
V
V
GS(pl)
GS(th)
V
GS
Q
GS2
Q
GS1
Q
Q
GD
G(tot)
GS
Q
003aaa508
Fig. 15. MOSFET transistor: Gate charge waveform
definitions
0
0.2
0.4
0.6
0.8
Q
1
(nC)
G
VDS = 30 V; ID = 0.2 A
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
aaa-023341
0.2
I
S
(A)
0.1
T = 150 ºC
j
T = 25 ºC
j
0
0
0.4
0.8
1.2
V
(V)
SD
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
10. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 17. Duty cycle definition
©
NX138BKS
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Nexperia B.V. 2017. All rights reserved
Product data sheet
15 June 2016
9 / 15
Nexperia
NX138BKS
60 V, dual N-channel Trench MOSFET
11. Package outline
Plastic surface-mounted package; 6 leads
SOT363
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
1
2
3
c
e
1
b
L
w
M B
p
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
b
p
c
D
e
e
H
L
Q
v
w
y
E
p
1
E
max
0.30
0.20
1.1
0.8
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.25
0.15
mm
0.1
1.3
0.65
0.2
0.2
0.1
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
04-11-08
06-03-16
SOT363
SC-88
Fig. 18. Package outline TSSOP6 (SOT363)
©
NX138BKS
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Nexperia B.V. 2017. All rights reserved
Product data sheet
15 June 2016
10 / 15
Nexperia
NX138BKS
60 V, dual N-channel Trench MOSFET
12. Soldering
2.65
solder lands
solder resist
0.4 (2×)
1.5
2.35
0.6
(4×)
0.5
(4×)
solder paste
0.5
(4×)
0.6
(2×)
occupied area
0.6
(4×)
Dimensions in mm
1.8
sot363_fr
Fig. 19. Reflow soldering footprint for TSSOP6 (SOT363)
1.5
solder lands
solder resist
2.5
0.3
4.5
occupied area
1.5
Dimensions in mm
preferred transport
direction during soldering
1.3
1.3
2.45
5.3
sot363_fw
Fig. 20. Wave soldering footprint for TSSOP6 (SOT363)
©
NX138BKS
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Nexperia B.V. 2017. All rights reserved
Product data sheet
15 June 2016
11 / 15
Nexperia
NX138BKS
60 V, dual N-channel Trench MOSFET
13. Revision history
Table 7. Revision history
Data sheet ID
Release date
20160615
Data sheet status
Change notice
Supersedes
NX138BKS v.1
Product data sheet
-
-
©
NX138BKS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
15 June 2016
12 / 15
Nexperia
NX138BKS
60 V, dual N-channel Trench MOSFET
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
14. Legal information
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make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Data sheet status
Document
Product
Definition
status [1][2] status [3]
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authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
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Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
[1] Please consult the most recently issued document before initiating or
completing a design.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes
no representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
[2] The term 'short data sheet' is explained in section "Definitions".
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Nexperia does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
short data sheet, the full data sheet shall prevail.
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automotive qualified products in automotive equipment or applications.
©
NX138BKS
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Nexperia B.V. 2017. All rights reserved
Product data sheet
15 June 2016
13 / 15
Nexperia
NX138BKS
60 V, dual N-channel Trench MOSFET
In the event that customer uses the product for design-in and use in
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customer (a) shall use the product without Nexperia’s warranty
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©
NX138BKS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
15 June 2016
14 / 15
Nexperia
NX138BKS
60 V, dual N-channel Trench MOSFET
15. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Limiting values............................................................. 3
8. Thermal characteristics............................................... 4
9. Characteristics..............................................................6
10. Test information......................................................... 9
11. Package outline........................................................ 10
12. Soldering................................................................... 11
13. Revision history........................................................12
14. Legal information..................................................... 13
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 15 June 2016
©
NX138BKS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
15 June 2016
15 / 15
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