BZV49-C15 [NEXPERIA]
Voltage regulator diodesProduction;型号: | BZV49-C15 |
厂家: | Nexperia |
描述: | Voltage regulator diodesProduction 测试 二极管 |
文件: | 总11页 (文件大小:484K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BZV49 series
Voltage regulator diodes
Product data sheet
2005 Feb 03
Supersedes data of 1999 May 11
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZV49 series
FEATURES
PINNING
• Total power dissipation: max. 1 W
PIN
1
DESCRIPTION
• Tolerance series: approx. ±5%
anode
cathode
anode
• Working voltage range: nom. 2.4 to 75 V (E24 range)
2
• Non-repetitive peak reverse power dissipation:
max. 40 W.
3
APPLICATIONS
• General regulation functions.
1
3
DESCRIPTION
Medium-power voltage regulator diodes in a SOT89
plastic SMD package.
2
3
2
1
sym096
The diodes are available in the normalized E24 approx.
±5% tolerance range. The series consists of 37 types with
nominal working voltages from 2.4 to 75 V (BZV49-C2V4
to BZV49-C75).
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
PACKAGE
DESCRIPTION
TYPE NUMBER
NAME
VERSION
BZV49-C2V4 to
BZV49-C75
note 1
SC-62
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
SOT89
Note
1. The series consists of 37 types with nominal working voltages from 2.4 to 75 V (E24 range).
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BZV49-C2V4
BZV49-C2V7
BZV49-C3V0
BZV49-C3Y3
BZV49-C3V6
BZV49-C3V9
BZV49-C4V3
BZV49-C4V7
BZV49-C5V1
BZV49-C5V6
2Y4
2Y7
3Y0
3Y3
3Y6
3Y9
4Y3
4Y7
5Y1
5Y6
BZV49-C6V2
BZV49-C6V8
BZV49-C7V5
BZV49-C8V2
BZV49-C9V1
BZV49-C10
BZV49-C11
BZV49-C12
BZV49-C13
BZV49-C15
6Y2
6Y8
7Y5
8Y2
9Y1
10Y
11Y
12Y
13Y
15Y
BZV49-C16
BZV49-C18
BZV49-C20
BZV49-C22
BZV49-C24
BZV49-C27
BZV49-C30
BZV49-C33
BZV49-C36
BZV49-C39
16Y
18Y
20Y
22Y
24Y
27Y
30Y
33Y
36Y
39Y
BZV49-C43
BZV49-C47
BZV49-C51
BZV49-C56
BZV49-C62
BZV49-C68
BZV49-C75
−
43Y
47Y
51Y
56Y
62Y
68Y
75Y
−
−
−
−
−
2005 Feb 03
2
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZV49 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
IF
PARAMETER
CONDITIONS
MIN.
MAX.
250
UNIT
mA
continuous forward current
−
IZSM
non-repetitive peak reverse current tp = 100 μs; square wave;
Tj = 25 °C prior to surge
see Table
“Per type”
Ptot
total power dissipation
Tamb = 25 °C; note 1
−
−
1
W
W
PZSM
non-repetitive peak reverse power tp = 100 μs; square wave;
40
dissipation
Tj = 25 °C prior to surge; see Fig.2
Tstg
Tj
storage temperature
junction temperature
−65
+150
150
°C
°C
−
Note
1. Device mounted on a ceramic substrate; area = 2.5 cm2; thickness = 0.7 mm.
ELECTRICAL CHARACTERISTICS
Total series
Tamb = 25 °C unless otherwise specified.
SYMBOL
VF
PARAMETER
forward voltage
CONDITIONS
MAX.
UNIT
IF = 50 mA; see Fig.3
1
V
2005 Feb 03
3
Per type
Tj = 25 °C unless otherwise specified.
WORKING
VOLTAGE
VZ (V)
DIFFERENTIAL
RESISTANCE
TEMP. COEFF.
SZ (mV/K)
at IZtest
see Figs 4 and 5
TEST
CURRENT
IZtest (mA) at f = 1 MHz;
at VR = 0 V
DIODE CAP.
Cd (pF)
REVERSE
CURRENT at
REVERSE
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A)
rdif (Ω)
at IZtest
BZV49-
CXXX
at IZtest
VOLTAGE
at tp = 100 μs;
T
amb = 25 °C
IR (μA)
VR
(V)
MIN. MAX.
TYP.
MAX.
MIN. TYP. MAX.
MAX.
MAX.
MAX.
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
2.2
2.5
2.6
2.9
70
75
80
85
85
85
80
50
40
15
6
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
−3.5 −1.6
−3.5 −2.0
−3.5 −2.1
−3.5 −2.4
−3.5 −2.4
−3.5 −2.5
−3.5 −2.5
0
0
0
0
0
0
0
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
450
450
450
450
450
450
450
300
300
300
200
200
150
150
150
90
50
20
10
5
1.0
1.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
1.25
1.25
2.8
3.2
1.0
3.1
3.5
1.0
3.4
3.8
5
1.0
3.7
4.1
3
1.0
4.0
4.6
3
1.0
4.4
5.0
−3.5 −1.4 +0.2
−2.7 −0.8 +1.2
−2.0 +1.2 +2.5
3
2.0
4.8
5.4
2
2.0
5.2
6.0
1
2.0
5.8
6.6
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
2.3
3.0
4.0
4.6
5.5
6.4
7.4
3.7
4.5
5.3
6.2
7.0
8.0
9.0
3
4.0
6.4
7.2
6
2
4.0
7.0
7.9
6
1
5.0
7.7
8.7
6
0.7
5.0
8.5
9.6
6
0.5
6.0
9.4
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
8
0.2
7.0
11
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
10
10
10
10
10
10
15
20
25
85
0.1
8.0
12
8.4 10.0
9.4 11.0
85
0.1
8.0
13
80
0.1
8.0
15
9.2 11.4 13.0
10.4 12.4 14.0
12.4 14.4 16.0
14.4 16.4 18.0
16.4 18.4 20.0
18.4 20.4 22.0
75
0.05
0.05
0.05
0.05
0.05
0.05
10.5
11.2
12.6
14.0
15.4
16.8
16
75
18
70
20
60
22
60
24
55
WORKING
VOLTAGE
VZ (V)
DIFFERENTIAL
RESISTANCE
rdif (Ω)
TEMP. COEFF.
SZ (mV/K)
at IZtest
see Figs 4 and 5
TEST
CURRENT
Ztest (mA) at f = 1 MHz;
DIODE CAP.
Cd (pF)
REVERSE
CURRENT at
REVERSE
NON-REPETITIVE PEAK
REVERSE CURRENT
I
I
ZSM (A)
BZV49-
CXXX
at IZtest
at IZtest
at VR = 0 V
VOLTAGE
at tp = 100 μs;
T
amb = 25 °C
IR (μA)
VR
(V)
MIN. MAX.
TYP.
MAX.
MIN. TYP. MAX.
MAX.
MAX.
MAX.
27
30
33
36
39
43
47
51
56
62
68
75
25.1
28.0
31.0
34.0
37.0
40.0
44.0
48.0
52.0
58.0
64.0
70.0
28.9
32.0
35.0
38.0
41.0
46.0
50.0
54.0
60.0
66.0
72.0
79.0
25
30
35
35
40
45
50
60
70
80
90
95
80
80
21.4 23.4 25.3
24.4 26.6 29.4
27.4 29.7 33.4
30.4 33.0 37.4
33.4 36.4 41.2
37.6 41.2 46.6
42.0 46.1 51.8
46.6 51.0 57.2
52.2 57.0 63.8
58.8 64.4 71.6
65.6 71.7 79.8
73.4 80.2 88.6
2
2
2
2
2
2
2
2
2
2
2
2
50
50
45
45
45
40
40
40
40
35
35
35
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
18.9
21.0
23.1
25.2
27.3
30.1
32.9
35.7
39.2
43.4
47.6
52.5
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.3
0.25
0.2
80
90
130
150
170
180
200
215
240
255
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZV49 series
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-tp)
PARAMETER
CONDITIONS
VALUE
15
UNIT
K/W
K/W
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
Rth(j-a)
note 1
125
Note
1. Device mounted on a ceramic substrate; area = 2.5 cm2; thickness = 0.7 mm.
GRAPHICAL DATA
MBG801
MBG781
3
10
300
handbook, halfpage
handbook, halfpage
I
P
F
ZSM
(mA)
(W)
2
200
10
(1)
(2)
10
100
0
0.6
1
10
0.8
1
−1
1
duration (ms)
10
V
(V)
F
(1) Tj = 25 °C (prior to surge).
(2) Tj = 150 °C (prior to surge).
Tj = 25 °C.
Fig.2 Maximum permissible non-repetitive peak
reverse power dissipation versus duration.
Fig.3 Forward current as a function of forward
voltage; typical values.
2005 Feb 03
6
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZV49 series
MBG927
1
4V3
S
Z
(mV/K)
3V9
3V6
3V3
3V0
0
−1
−2
−3
2V7
2V4
-3
-2
-1
10
10
10
1
I
(A)
Z
BZV49-C2V4 to C4V3.
Tj = 25 to 150 °C.
Fig.4 Temperature coefficient as a function of working current; typical values.
MBG924
10
handbook, halfpage
S
Z
(mV/K)
10
9V1
5
8V2
7V5
6V8
6V2
5V6
5V1
0
4V7
−5
0
4
8
12
16
20
I
(mA)
Z
BZV49-C4V7 to C10.
Tj = 25 to 150 °C.
Fig.5 Temperature coefficient as a function of
working current; typical values.
2005 Feb 03
7
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZV49 series
PACKAGE OUTLINE
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
A
D
b
p3
E
H
E
L
p
1
2
3
c
b
p2
w
M
b
p1
e
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b
b
c
D
E
e
e
H
E
L
p
w
p1
p2
p3
1
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.23
4.6
4.4
2.6
2.4
4.25
3.75
1.2
0.8
mm
3.0
1.5
0.13
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
04-08-03
06-03-16
SOT89
TO-243
SC-62
2005 Feb 03
8
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZV49 series
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
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Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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use in medical, military, aircraft, space or life support
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of an NXP Semiconductors product can reasonably be
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property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
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Export control ⎯ This document as well as the item(s)
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regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2005 Feb 03
9
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R76/04/pp10
Date of release: 2005 Feb 03
Document order number: 9397 750 13926
相关型号:
BZV49-C15T/R
DIODE 15 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-243AA, PLASTIC, SC-62, TO-243, 3 PIN, Voltage Regulator Diode
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