BUK7Y1R7-40H [NEXPERIA]
N-channel 40 V, 1.7 mΩ standard level MOSFET in LFPAK56Production;型号: | BUK7Y1R7-40H |
厂家: | Nexperia |
描述: | N-channel 40 V, 1.7 mΩ standard level MOSFET in LFPAK56Production |
文件: | 总13页 (文件大小:262K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BUK7Y1R7-40H
N-channel 40 V, 1.7 mΩ standard level MOSFET in LFPAK56
9 May 2018
Product data sheet
1. General description
Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction
technology, housed in a robust LFPAK56 package. This product has been fully designed and
qualified to meet AEC-Q101 requirements delivering high performance and endurance.
2. Features and benefits
•
Fully automotive qualified to AEC-Q101:
175 °C rating suitable for thermally demanding environments
Trench 9 Superjunction technology:
•
•
•
Reduced cell pitch enables enhanced power density and efficiency with lower RDSon in
same footprint
•
•
Improved SOA and avalanche capability compared to standard TrenchMOS
Tight VGS(th) limits enable easy paralleling of MOSFETs
•
LFPAK Gull Wing leads:
•
High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike
traditional QFN packages
•
•
Visual (AOI) soldering inspection, no need for expensive x-ray equipment
Easy solder wetting for good mechanical solder joint
•
LFPAK copper clip technology:
•
•
Improved reliability, with reduced Rth and RDSon
Increases maximum current capability and improved current spreading
3. Applications
•
•
•
•
•
12 V automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching
Nexperia
BUK7Y1R7-40H
N-channel 40 V, 1.7 mΩ standard level MOSFET in LFPAK56
4. Quick reference data
Table 1. Quick reference data
Symbol
VDS
Parameter
Conditions
Min
Typ
Max
40
Unit
V
drain-source voltage
drain current
25 °C ≤ Tj ≤ 175 °C
VGS = 10 V; Tmb = 25 °C
-
-
-
-
-
-
ID
120
294
A
Ptot
total power dissipation Tmb = 25 °C; Fig. 1
W
Static characteristics
RDSon drain-source on-state
resistance
Dynamic characteristics
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 10
0.95
-
1.35
10
1.7
25
mΩ
nC
nC
QGD
gate-drain charge
ID = 25 A; VDS = 32 V; VGS = 10 V;
Fig. 12; Fig. 13
Source-drain diode
Qr
recovered charge
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V; Fig. 16
-
-
25
-
-
S
softness factor
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V; Tj = 25 °C; Fig. 16
0.8
©
BUK7Y1R7-40H
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
9 May 2018
2 / 13
Nexperia
BUK7Y1R7-40H
N-channel 40 V, 1.7 mΩ standard level MOSFET in LFPAK56
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
S
S
S
G
D
source
source
source
gate
mb
D
S
2
G
3
4
mbb076
1
2 3 4
mb
mounting base; connected to
drain
LFPAK56; Power-
SO8 (SOT669)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
BUK7Y1R7-40H
LFPAK56;
plastic, single-ended surface-mounted package; 4 terminals
SOT669
Power-SO8
7. Marking
Table 4. Marking codes
Type number
Marking code
BUK7Y1R7-40H
71H740
©
BUK7Y1R7-40H
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
9 May 2018
3 / 13
Nexperia
BUK7Y1R7-40H
N-channel 40 V, 1.7 mΩ standard level MOSFET in LFPAK56
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGS
Ptot
Parameter
Conditions
Min
-
Max
40
Unit
V
drain-source voltage
gate-source voltage
total power dissipation
drain current
25 °C ≤ Tj ≤ 175 °C
DC; Tj ≤ 175 °C
-10
-
20
V
Tmb = 25 °C; Fig. 1
294
120
600
175
175
W
A
ID
VGS = 10 V; Tmb = 25 °C
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 2
-
IDM
peak drain current
storage temperature
junction temperature
-
A
Tstg
Tj
-55
-55
°C
°C
Source-drain diode
IS
source current
peak source current
Tmb = 25 °C
[1]
-
-
120
600
A
A
ISM
pulsed; tp ≤ 10 µs; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S non-repetitive drain-
ID = 120 A; Vsup ≤ 40 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped;
Fig. 3
[2] [3]
-
158
mJ
source avalanche
energy
[1] 120A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,
thermal design and operating temperature
[2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[3] Refer to application note AN10273 for further information.
03na19
120
P
der
(%)
80
40
0
0
50
100
150
200
T
(°C)
mb
Fig. 1. Normalized total power dissipation as a function of mounting base temperature
©
BUK7Y1R7-40H
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
9 May 2018
4 / 13
Nexperia
BUK7Y1R7-40H
N-channel 40 V, 1.7 mΩ standard level MOSFET in LFPAK56
aaa-018445
3
10
I
D
Limit R
= V / I
DS D
(A)
DSon
t
p
= 10 us
2
10
100 us
DC
10
1 ms
10 ms
1
100 ms
-1
10
-1
2
10
1
10
10
V
DS
(V)
Tmb = 25°C; IDM is a single pulse
Fig. 2. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
aaa-026222
3
10
I
AL
(A)
2
10
(1)
10
(2)
(3)
1
-1
10
-3
-2
-1
10
10
10
1
AL
10
t
(ms)
(1) Tj (init) = 25 °C; (2) Tj (init) = 150 °C; (3) Repetitive Avalanche
Fig. 3. Avalanche rating; avalanche current as a function of avalanche time
©
BUK7Y1R7-40H
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
9 May 2018
5 / 13
Nexperia
BUK7Y1R7-40H
N-channel 40 V, 1.7 mΩ standard level MOSFET in LFPAK56
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
Fig. 4
-
0.39
0.51
K/W
aaa-018446
1
Z
th(j-mb)
(K/W)
δ = 0.5
-1
-2
-3
0.2
10
0.1
0.05
t
p
0.02
P
10
10
δ =
single shot
T
t
t
p
T
-6
-5
-4
-3
-2
-1
10
10
10
10
10
10
1
t
p
(s)
Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
©
BUK7Y1R7-40H
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Nexperia B.V. 2018. All rights reserved
Product data sheet
9 May 2018
6 / 13
Nexperia
BUK7Y1R7-40H
N-channel 40 V, 1.7 mΩ standard level MOSFET in LFPAK56
10. Characteristics
Table 7. Characteristics
Symbol
Static characteristics
V(BR)DSS drain-source
breakdown voltage
Parameter
Conditions
Min
Typ
Max
Unit
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -40 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
40
-
43
40.5
40
3
-
V
V
V
V
-
36
2.4
-
VGS(th)
gate-source threshold ID = 1 mA; VDS=VGS; Tj = 25 °C; Fig. 8;
3.6
voltage
Fig. 9
ID = 1 mA; VDS=VGS; Tj = -55 °C; Fig. 8
ID = 1 mA; VDS=VGS; Tj = 175 °C; Fig. 8
VDS = 40 V; VGS = 0 V; Tj = 25 °C
VDS = 16 V; VGS = 0 V; Tj = 125 °C
VDS = 40 V; VGS = 0 V; Tj = 175 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
-
-
4.3
-
V
1
-
V
IDSS
drain leakage current
gate leakage current
-
0.2
1.8
200
2
1
µA
µA
µA
nA
nA
mΩ
-
10
500
100
100
1.7
-
IGSS
-
-
2
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 10
0.95
1.35
VGS = 10 V; ID = 25 A; Tj = 105 °C;
Fig. 11
1.34
1.48
1.86
0.4
2.05
2.24
2.78
1.02
2.7
3
mΩ
mΩ
mΩ
Ω
VGS = 10 V; ID = 25 A; Tj = 125 °C;
Fig. 11
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 11
3.7
2.5
RG
gate resistance
f = 1 MHz; Tj = 25 °C
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
ID = 25 A; VDS = 32 V; VGS = 10 V;
Fig. 12; Fig. 13
-
-
-
-
-
-
56
16
10
96
24
25
nC
nC
nC
gate-source charge
gate-drain charge
input capacitance
output capacitance
VDS = 25 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 14
4095 6142 pF
1083 1516 pF
Coss
Crss
reverse transfer
capacitance
178
393
pF
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 30 V; RL = 1.2 Ω; VGS = 10 V;
RG(ext) = 5 Ω
-
-
-
-
14.6
12.6
35.2
16.6
-
-
-
-
ns
ns
ns
ns
turn-off delay time
fall time
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 15
-
0.8
1.2
V
©
BUK7Y1R7-40H
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
9 May 2018
7 / 13
Nexperia
BUK7Y1R7-40H
N-channel 40 V, 1.7 mΩ standard level MOSFET in LFPAK56
Symbol
Parameter
Conditions
Min
Typ
32
Max
Unit
ns
trr
Qr
S
reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
-
-
-
-
-
-
VDS = 20 V; Fig. 16
recovered charge
25
nC
softness factor
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V; Tj = 25 °C; Fig. 16
0.8
IS = 25 A; dIS/dt = -500 A/µs; VGS = 0 V;
VDS = 20 V; Tj = 25 °C; Fig. 16
-
0.7
-
aaa-018447
aaa-018448
300
6
20 V
V
GS
= 5.5 V
I
D
R
DSon
(A)
(mΩ)
6 V
5
4
3
2
1
0
240
180
120
60
5 V
10 V
4.5 V
4 V
0
0
0.5
1
1.5
2
2.5
3
DS
3.5
(V)
4
0
4
8
12
16
V (V)
GS
20
V
Tj = 25 °C
Tj = 25 °C; ID = 25 A;
Fig. 5. Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig. 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values
aaa-018449
aaa-018139
300
5
I
V
GS(th)
(V)
D
(A)
250
200
150
100
50
4
3
2
1
0
Max
Typ
Min
25°C
175°C
3
T = -55°C
j
0
0
1
2
4
5
(V)
6
-60 -30
0
30
60
90 120 150 180
T (°C)
V
GS
j
VDS = 8 V
ID = 1 mA ; VDS = VGS
Fig. 7. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
Fig. 8. Gate-source threshold voltage as a function of
junction temperature
©
BUK7Y1R7-40H
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
9 May 2018
8 / 13
Nexperia
BUK7Y1R7-40H
N-channel 40 V, 1.7 mΩ standard level MOSFET in LFPAK56
aaa-018138
aaa-018450
-1
10
10
I
R
(mΩ)
D
DSon
4.5 V
5 V
(A)
-2
-3
-4
-5
-6
10
8
6
4
2
0
Min
Typ
Max
10
10
10
10
5.5 V
6 V
20 V
V
= 10 V
GS
0
1
2
3
4
5
0
50
100
150
200
250 300
V
(V)
I (A)
D
GS
Tj = 25 °C; VDS = 5V
Tj = 25 °C
Fig. 9. Sub-threshold drain current as a function of
gate-source voltage
Fig. 10. Drain-source on-state resistance as a function
of drain current; typical values
aaa-026897
aaa-018452
2.4
10
a
V
GS
(V)
2
8
6
4
2
0
1.6
1.2
0.8
0.4
0
V
DS
= 14 V
32 V
-60 -30
0
30
60
90 120 150 180
T (°C)
0
10
20
30
40
50
(nC)
60
Q
G
j
Tj = 25 °C; ID = 25 A
Fig. 12. Gate-source voltage as a function of gate
charge; typical values
Fig. 11. Normalized drain-source on-state resistance
factor as a function of junction temperature
©
BUK7Y1R7-40H
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
9 May 2018
9 / 13
Nexperia
BUK7Y1R7-40H
N-channel 40 V, 1.7 mΩ standard level MOSFET in LFPAK56
aaa-018453
4
10
V
C
DS
(pF)
C
iss
I
D
3
2
10
10
C
V
V
oss
GS(pl)
GS(th)
C
rss
V
GS
Q
GS2
Q
GS1
Q
GS
Q
GD
G(tot)
Q
003aaa508
10
10
Fig. 13. Gate charge waveform definitions
-1
2
1
10
10
V
DS
(V)
VGS = 0 V; f = 1 MHz
Fig. 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
003aaf444
aaa-018454
120
100
80
60
40
20
0
I
S
I
D
(A)
(A)
t
rr
t
t
b
a
0
0.25 I
RM
t
t
I
b
a
RM
S =
175°C
0.4
T = 25°C
j
0
0.2
0.6
0.8
1
(V)
1.2
t (s)
V
SD
VGS = 0 V
Fig. 15. Source-drain (diode forward) current as a
function of source-drain (diode forward)
voltage; typical values
Fig. 16. Reverse recovery waveform definitions
©
BUK7Y1R7-40H
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Nexperia B.V. 2018. All rights reserved
Product data sheet
9 May 2018
10 / 13
Nexperia
BUK7Y1R7-40H
N-channel 40 V, 1.7 mΩ standard level MOSFET in LFPAK56
11. Package outline
Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads
SOT669
A
2
E
A
C
c
E
b
2
1
2
b
3
L
1
mounting
base
b
4
D
1
D
H
L
2
1
2
3
4
X
e
w
A
c
b
1/2 e
A
(A )
3
C
A
1
q
L
detail X
y
C
θ
8
0
0
5 mm
°
°
scale
Dimensions (mm are the original dimensions)
(1)
(1)
(1)
(1)
(1)
Unit
A
A
A
A
b
b
b
b
4
c
c
2
D
D
1
E
E
e
H
L
L
L
2
w
y
1
2
3
2
3
1
1
max 1.20 0.15 1.10
nom
min 1.01 0.00 0.95
0.50 4.41 2.2 0.9 0.25 0.30 4.10 4.20 5.0 3.3
6.2 0.85 1.3 1.3
5.8 0.40 0.8 0.8
0.1
0.25
1.27
0.25
mm
0.35 3.62 2.0 0.7 0.19 0.24 3.80
4.8 3.1
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
sot669_po
Issue date
11-03-25
References
Outline
version
European
projection
IEC
JEDEC
JEITA
SOT669
MO-235
13-02-27
Fig. 17. Package outline LFPAK56; Power-SO8 (SOT669)
©
BUK7Y1R7-40H
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
9 May 2018
11 / 13
Nexperia
BUK7Y1R7-40H
N-channel 40 V, 1.7 mΩ standard level MOSFET in LFPAK56
Suitability for use in automotive applications — This Nexperia product
has been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted to
be suitable for use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
12. Legal information
Data sheet status
Document status Product
Definition
[1][2]
status [3]
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Product [short]
data sheet
This document contains the product
specification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Nexperia product is suitable
and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
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customer’s applications and products using Nexperia products in order to
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Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
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©
BUK7Y1R7-40H
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Nexperia B.V. 2018. All rights reserved
Product data sheet
9 May 2018
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Nexperia
BUK7Y1R7-40H
N-channel 40 V, 1.7 mΩ standard level MOSFET in LFPAK56
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................2
5. Pinning information......................................................3
6. Ordering information....................................................3
7. Marking..........................................................................3
8. Limiting values............................................................. 4
9. Thermal characteristics............................................... 6
10. Characteristics............................................................7
11. Package outline........................................................ 11
12. Legal information.......................................................12
© Nexperia B.V. 2018. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 9 May 2018
©
BUK7Y1R7-40H
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
9 May 2018
13 / 13
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