BUK7S2R5-40H [NEXPERIA]
N-channel 40 V, 2.5 mOhm standard level MOSFET in LFPAK88Production;
| 型号： | BUK7S2R5-40H |
| 厂家： | 
Nexperia |
| 描述： | N-channel 40 V, 2.5 mOhm standard level MOSFET in LFPAK88Production |
| 文件： | 总13页 (文件大小：335K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUK7S2R5-40H
N-channel 40 V, 2.5 mOhm standard level MOSFET in
LFPAK88
6 April 2021
Product data sheet
1. General description
Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction
technology, housed in a copper-clip LFPAK88 package. This product has been fully designed and
qualified to meet beyond AEC-Q101 requirements delivering high performance and reliability.
2. Features and benefits
•
Fully automotive qualified to beyond AEC-Q101:
-55 °C to +175 °C rating suitable for thermally demanding environments
LFPAK88 package:
•
•
•
Designed for smaller footprint and improved power density over older wire bond packages
such as D²PAK for today’s space constrained high power automotive applications
•
Thin package and copper clip enables LFPAK88 to be highly efficient thermally
•
LFPAK copper clip technology enabling improvements over wire bond packages by:
•
•
•
•
Increased maximum current capability and excellent current spreading
Improved RDSon
Low source inductance
Low thermal resistance Rth
•
•
LFPAK Gull Wing leads:
•
Flexible leads enabling high Board Level Reliability absorbing mechanical and thermal
cycling stress, unlike traditional QFN packages
•
•
Visual (AOI) soldering inspection, no need for expensive x-ray equipment
Easy solder wetting for good mechanical solder joint
Unique 40 V Trench 9 superjunction technology:
•
•
•
Reduced cell pitch and superjunction platform enables lower RDSon in the same footprint
Improved SOA and avalanche capability compared to standard TrenchMOS
Tight VGS(th) limits enable easy paralleling of MOSFETs
3. Applications
•
•
•
•
•
12 V automotive systems
48 V DC/DC systems (on 12 V secondary side)
Higher power motors, lamps and solenoid control
Reverse polarity protection
Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
VDS
Parameter
Conditions
Min
Typ
Max
40
Unit
V
drain-source voltage
drain current
25 °C ≤ Tj ≤ 175 °C
VGS = 10 V; Tmb = 25 °C; Fig. 2
-
-
-
-
-
-
ID
[1]
140
135
A
Ptot
total power dissipation Tmb = 25 °C; Fig. 1
W
Nexperia
BUK7S2R5-40H
N-channel 40 V, 2.5 mOhm standard level MOSFET in LFPAK88
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
RDSon drain-source on-state
resistance
Dynamic characteristics
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 11
1.51
2.16
2.51
mΩ
QGD
gate-drain charge
ID = 25 A; VDS = 32 V; VGS = 10 V;
Fig. 13; Fig. 14
-
7
14
nC
nC
Source-drain diode
Qr
S
recovered charge
softness factor
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; [2]
VDS = 20 V; Tj = 25 °C; Fig. 17
-
-
19.1
0.89
-
-
[1] 140A continuous current has been successfully demonstrated during application. Practically the current will be limited by PCB, thermal
design and operating temperature
[2] includes capacitive recovery
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
Description
gate
Simplified outline
Graphic symbol
G
S
S
S
D
D
S
2
Source
Source
Source
G
3
4
mbb076
mb
mounting base; connected
to drain
1
2
3
4
LFPAK88 (SOT1235)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
plastic, single-ended surface-mounted package
Version
BUK7S2R5-40H
LFPAK88
SOT1235
(LFPAK88); 4 leads; 2 mm pitch; 8 mm x 8 mm x 1.6 mm
body
7. Marking
Table 4. Marking codes
Type number
Marking code
7S2R540H
BUK7S2R5-40H
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
40
Unit
VDS
drain-source voltage
25 °C ≤ Tj ≤ 175 °C
-
V
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BUK7S2R5-40H
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Nexperia B.V. 2021. All rights reserved
Product data sheet
6 April 2021
2 / 13
Nexperia
BUK7S2R5-40H
N-channel 40 V, 2.5 mOhm standard level MOSFET in LFPAK88
Symbol
VGS
Ptot
ID
Parameter
Conditions
Min
-10
-
Max
20
Unit
V
gate-source voltage
total power dissipation
drain current
DC; Tj = 175 °C
Tmb = 25 °C; Fig. 1
135
140
629
175
175
W
A
VGS = 10 V; Tmb = 25 °C; Fig. 2
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
[1]
[2]
-
IDM
peak drain current
storage temperature
junction temperature
-
A
Tstg
Tj
-55
-55
°C
°C
Source-drain diode
IS
source current
peak source current
Tmb = 25 °C
-
-
135
629
A
A
ISM
pulsed; tp ≤ 10 µs; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-
ID = 96 A; Vsup ≤ 40 V; RGS = 50 Ω;
source avalanche energy VGS = 10 V; Tj(init) = 25 °C; unclamped;
Fig. 4
[3] [4]
[5]
-
-
80
96
mJ
A
IAS
non-repetitive avalanche Vsup = 40 V; VGS = 10 V; Tj(init) = 25 °C;
current
RGS = 50 Ω
[1] 140A continuous current has been successfully demonstrated during application. Practically the current will be limited by PCB, thermal
design and operating temperature
[2] 135A continuous current has been successfully demonstrated during application. Practically the current will be limited by PCB, thermal
design and operating temperature
[3] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[4] Refer to application note AN10273 for further information.
[5] Protected by 100% test.
03aa16
aaa-032635
120
160
120
80
40
0
I
D
(A)
P
der
(%)
(1)
80
40
0
0
50
100
150
200
0
25
50
75 100 125 150 175 200
T
mb
(°C)
T
(°C)
mb
VGS ≥ 10 V
(1) 140A continuous current has been successfully
demonstrated during application tests. Practically
the current will be limited by PCB, thermal design
and operating temperature.
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
Fig. 2. Continuous drain current as a function of
mounting base temperature
©
BUK7S2R5-40H
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Nexperia B.V. 2021. All rights reserved
Product data sheet
6 April 2021
3 / 13
Nexperia
BUK7S2R5-40H
N-channel 40 V, 2.5 mOhm standard level MOSFET in LFPAK88
aaa-032637
3
10
I
D
Limit R
= V / I
DS D
DSon
(A)
2
10
t
p
= 10 µs
100 µs
DC
10
1 ms
10 ms
100 ms
1
-1
10
-1
2
10
1
10
10
V
DS
(V)
Tmb = 25 °C; IDM is a single pulse
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
aaa-032636
2
10
I
AL
(A)
(1)
10
(2)
(3)
1
-1
10
-3
-2
-1
10
10
10
1
AL
10
t
(ms)
(1) Tj (init) = 25 °C; (2) Tj (init) = 150 °C; (3) Repetitive Avalanche
Fig. 4. Avalanche rating; avalanche current as a function of avalanche time
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
1.11
Unit
Rth(j-mb)
thermal resistance from Fig. 5
junction to mounting
base
-
0.97
K/W
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BUK7S2R5-40H
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Nexperia B.V. 2021. All rights reserved
Product data sheet
6 April 2021
4 / 13
Nexperia
BUK7S2R5-40H
N-channel 40 V, 2.5 mOhm standard level MOSFET in LFPAK88
aaa-032638
10
Z
th(j-mb)
(K/W)
1
δ = 0.5
0.2
0.1
-1
10
10
10
0.05
single shot
t
0.02
p
P
δ =
T
-2
-3
t
t
p
T
-6
-5
-4
-3
-2
-1
10
10
10
10
10
10
1
t
p
(s)
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7. Characteristics
Symbol
Static characteristics
V(BR)DSS drain-source
breakdown voltage
Parameter
Conditions
Min
Typ
Max
Unit
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -40 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
40
-
43
40.5
40
3
-
V
V
V
V
-
36
2.4
-
VGS(th)
gate-source threshold ID = 1 mA; VDS=VGS; Tj = 25 °C; Fig. 9;
3.6
voltage
Fig. 10
ID = 1 mA; VDS=VGS; Tj = -55 °C; Fig. 10
-
-
-
4.3
-
V
V
ID = 1 mA; VDS=VGS; Tj = 175 °C;
Fig. 10
1
IDSS
drain leakage current
gate leakage current
VDS = 40 V; VGS = 0 V; Tj = 25 °C
VDS = 16 V; VGS = 0 V; Tj = 125 °C
VDS = 40 V; VGS = 0 V; Tj = 175 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
-
0.027
0.7
82
1
µA
µA
µA
nA
nA
mΩ
-
10
-
500
100
100
2.51
IGSS
-
2
-
2
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 11
1.51
2.16
VGS = 10 V; ID = 25 A; Tj = 105 °C;
Fig. 12
2.14
2.37
2.97
0.31
3.32
3.64
4.52
0.76
3.99
4.39
5.47
1.91
mΩ
mΩ
mΩ
Ω
VGS = 10 V; ID = 25 A; Tj = 125 °C;
Fig. 12
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 12
RG
gate resistance
f = 1 MHz; Tj = 25 °C
Dynamic characteristics
QG(tot)
QGS
total gate charge
ID = 25 A; VDS = 32 V; VGS = 10 V;
Fig. 13; Fig. 14
-
-
-
38
11
7
54
16
14
nC
nC
nC
gate-source charge
gate-drain charge
QGD
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BUK7S2R5-40H
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Nexperia B.V. 2021. All rights reserved
Product data sheet
6 April 2021
5 / 13
Nexperia
BUK7S2R5-40H
N-channel 40 V, 2.5 mOhm standard level MOSFET in LFPAK88
Symbol
Ciss
Parameter
Conditions
Min
Typ
Max
Unit
input capacitance
output capacitance
VDS = 25 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 15
-
-
-
2709 3793 pF
Coss
729
127
1021 pF
Crss
reverse transfer
capacitance
279
pF
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 30 V; RL = 1.2 Ω; VGS = 10 V;
RG(ext) = 5 Ω
-
-
-
-
10
8.5
22
11
-
-
-
-
ns
ns
ns
ns
turn-off delay time
fall time
Source-drain diode
VSD
trr
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 16
-
-
-
-
-
0.79
30.1
19.1
0.89
0.67
1
-
V
reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
ns
nC
VDS = 20 V; Tj = 25 °C; Fig. 17
Qr
S
recovered charge
[1]
-
softness factor
-
IS = 25 A; dIS/dt = -500 A/µs; VGS = 0 V;
VDS = 20 V; Tj = 25 °C; Fig. 17
-
[1] includes capacitive recovery
320
aaa-032639
aaa-032640
8
6
4
2
0
I
R
DSon
(mΩ)
D
7 V
10 V
6 V
(A)
240
160
80
V
= 5.5 V
8 V
GS
5 V
4.5 V
4 V
0
0
1
2
3
V
4
0
4
8
12
16
V (V)
GS
20
(V)
DS
Tj = 25 °C
Tj = 25 °C; ID = 25A
Fig. 6. Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig. 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
©
BUK7S2R5-40H
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Nexperia B.V. 2021. All rights reserved
Product data sheet
6 April 2021
6 / 13
Nexperia
BUK7S2R5-40H
N-channel 40 V, 2.5 mOhm standard level MOSFET in LFPAK88
aaa-032641
aaa-018138
-1
-2
-3
-4
-5
-6
350
10
I
D
I
D
(A)
(A)
10
280
210
140
70
Min
Typ
Max
10
10
10
10
175°C
4
25°C
T = -55°C
j
0
0
1
2
3
5
6
V
7
(V)
8
0
1
2
3
4
GS
5
V
(V)
GS
VDS = 8 V
Tj = 25 °C; VDS = 5 V
Fig. 8. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
Fig. 9. Sub-threshold drain current as a function of
gate-source voltage
aaa-018139
aaa-032642
5
10
V
GS(th)
(V)
R
(mΩ)
DSon
4.5 V
5 V
5.5 V
4
3
2
1
0
8
6
4
2
0
Max
Typ
6 V
Min
V
= 10 V
GS
7 V 8 V
-60 -30
0
30
60
90 120 150 180
T (°C)
0
40
80 120 160 200 240 280 320
(A)
I
j
D
ID = 1 mA ; VDS = VGS
Tj = 25 °C
Fig. 10. Gate-source threshold voltage as a function of Fig. 11. Drain-source on-state resistance as a function
junction temperature
of drain current; typical values
©
BUK7S2R5-40H
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Nexperia B.V. 2021. All rights reserved
Product data sheet
6 April 2021
7 / 13
Nexperia
BUK7S2R5-40H
N-channel 40 V, 2.5 mOhm standard level MOSFET in LFPAK88
aaa-026897
aaa-032644
2.4
a
10
8
V
(V)
GS
2
1.6
1.2
0.8
0.4
0
6
32 V
= 14 V
4
V
DS
2
0
-60 -30
0
30
60
90 120 150 180
T (°C)
0
10
20
30
40
(nC)
G
50
Q
j
Tj = 25 °C; ID = 25 A
Fig. 13. Gate-source voltage as a function of gate
charge; typical values
Fig. 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
aaa-032645
4
10
C
(pF)
V
DS
C
C
iss
I
D
3
2
10
10
oss
V
V
GS(pl)
GS(th)
C
rss
V
GS
Q
GS2
Q
GS1
10
10
Q
Q
-1
2
GS
GD
1
10
10
V
DS
(V)
Q
G(tot)
003aaa508
VGS = 0 V; f = 1 MHz
Fig. 14. Gate charge waveform definitions
Fig. 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
©
BUK7S2R5-40H
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
6 April 2021
8 / 13
Nexperia
BUK7S2R5-40H
N-channel 40 V, 2.5 mOhm standard level MOSFET in LFPAK88
003aal160
aaa-032646
400
I
S
I
D
(A)
(A)
320
240
160
80
t
rr
t
t
b
a
0
175°C
0.25 I
RM
I
RM
T = 25°C
j
-55°C
0
t (s)
0
0.2
0.4
0.6
0.8
1
(V)
1.2
V
SD
Fig. 17. Reverse recovery timing definition
VGS = 0 V
Fig. 16. Source-drain (diode forward) current as a
function of source-drain (diode forward)
voltage; typical values
©
BUK7S2R5-40H
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Nexperia B.V. 2021. All rights reserved
Product data sheet
6 April 2021
9 / 13
Nexperia
BUK7S2R5-40H
N-channel 40 V, 2.5 mOhm standard level MOSFET in LFPAK88
11. Package outline
Plastic single-ended surface-mounted package (LFPAK88); 4 leads
SOT1235
b
2
E
1
D
1
A
C
1
A
3
θ
L
y
C
detail X
A
2
A
E
c
2
mounting
base
D
H
L
2
1
2
3
4
X
e
e
e
c
b
w
A
(4x)
0
4
8 mm
scale
Dimensions (mm are the original dimensions)
(1)
(1)
(1)
(1)
(1)
Unit
A
A
A
b
b
2
c
c
2
D
D
1
E
E
e
H
L
L
2
w
y
θ
1
2
3
1
°
max 0.15 1.7
nom
1.1
7.3 0.24 0.55 6.3
7.1 0.18 0.45 6.1
5.1
4.9
8.1
7.9
6.9
6.7
8.1
7.8
0.8
1.3
0.9
8
0
mm
0.25
2.0
0.25 0.10
°
0.00 1.5
0.9
0.6
min
Note
1. Plastic or metal protrusions of 0.2 mm maximum per side are not included.
sot1235_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
17-08-02
17-08-07
SOT1235
Fig. 18. Package outline LFPAK88 (SOT1235)
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BUK7S2R5-40H
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Nexperia B.V. 2021. All rights reserved
Product data sheet
6 April 2021
10 / 13
Nexperia
BUK7S2R5-40H
N-channel 40 V, 2.5 mOhm standard level MOSFET in LFPAK88
12. Soldering
Footprint information for reflow soldering of LFPAK88 package
SOT1235
9.2
8.8
8.6
0.3
0.2
1.85
2.05
1.7
2.1
0.2
1.2
0.7
0.7
0.1
0.2
1.25
1.76
4.275
2.925
5.7
1.15
7.8
3.74
9.4
0.2
1.225
1.9
1.6 1.4 1.3
1.6
6.55
6.8
7
1.2
1.4
1.1
2
7.8
recommended stencil thickness: 0.125 mm
solder resist
occupied area
solder land
solder paste
Dimensions in mm
18-12-12
18-12-13
Issue date
sot1235_fr
Fig. 19. Reflow soldering footprint for LFPAK88 (SOT1235)
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Product data sheet
6 April 2021
11 / 13
Nexperia
BUK7S2R5-40H
N-channel 40 V, 2.5 mOhm standard level MOSFET in LFPAK88
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
13. Legal information
Data sheet status
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Document status Product
Definition
[1][2]
status [3]
Applications — Applications that are described herein for any of these
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Nexperia product is suitable
and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Nexperia products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Nexperia does not accept any
liability in this respect.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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©
BUK7S2R5-40H
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
6 April 2021
12 / 13
Nexperia
BUK7S2R5-40H
N-channel 40 V, 2.5 mOhm standard level MOSFET in LFPAK88
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 2
9. Thermal characteristics............................................... 4
10. Characteristics............................................................5
11. Package outline........................................................ 10
12. Soldering................................................................... 11
13. Legal information......................................................12
© Nexperia B.V. 2021. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 6 April 2021
©
BUK7S2R5-40H
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
6 April 2021
13 / 13
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