BUK764R0-55B [NEXPERIA]
N-channel TrenchMOS standard level FETProduction;
| 型号： | BUK764R0-55B |
| 厂家： | 
Nexperia |
| 描述： | N-channel TrenchMOS standard level FETProduction 开关 脉冲 晶体管 |
| 文件： | 总14页 (文件大小：846K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUK764R0-55B
N-channel TrenchMOS standard level FET
Rev. 5 — 22 April 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC standard for use
in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for standard level gate drive
sources
Low conduction losses due to low
on-state resistance
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
VDS
Quick reference data
Parameter
Conditions
Min Typ Max Unit
drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
-
-
-
-
55
75
V
A
[1]
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1; see Figure 4
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 2
-
-
-
300
4
W
Static characteristics
RDSon drain-source on-state VGS = 10 V; ID = 25 A;
3.4
mΩ
resistance
Tj = 25 °C; see Figure 7;
see Figure 12
BUK764R0-55B
Nexperia
N-channel TrenchMOS standard level FET
Table 1.
Symbol
Quick reference data …continued
Parameter Conditions
Min Typ Max Unit
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
ID = 75 A; Vsup ≤ 55 V;
RGS = 50 Ω; VGS = 10 V;
Tj(init) = 25 °C; unclamped
-
-
1.2
J
Dynamic characteristics
QGD gate-drain charge
VGS = 10 V; ID = 25 A;
-
25
-
nC
VDS = 44 V; Tj = 25 °C;
see Figure 13
[1] Continuous current is limited by package.
2. Pinning information
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
G
D
S
D
gate
drain[1]
mb
D
S
2
3
source
G
mb
mounting base;
connected to drain
mbb076
2
1
3
SOT404 (D2PAK)
[1] It is not possible to make a connection to pin 2.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BUK764R0-55B
D2PAK
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
BUK764R0-55B
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 5 — 22 April 2011
2 of 14
BUK764R0-55B
Nexperia
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
55
Unit
V
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
RGS = 20 kΩ
-
VDGR
VGS
-
55
V
-20
20
V
[1]
[2][3]
[1]
ID
Tmb = 25 °C; VGS = 10 V; see Figure 1;
see Figure 4
-
-
-
-
75
A
193
75
A
Tmb = 100 °C; VGS = 10 V; see Figure 1
A
IDM
peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs;
774
A
see Figure 4
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tmb = 25 °C; see Figure 2
-
300
175
175
W
-55
-55
°C
°C
Source-drain diode
[2][1]
[1]
IS
source current
Tmb = 25 °C
-
-
-
193
75
A
A
A
ISM
peak source current
pulsed; tp ≤ 10 µs; Tmb = 25 °C
774
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
ID = 75 A; Vsup ≤ 55 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped
-
-
1.2
-
J
J
avalanche energy
[4][5][6][
7]
EDS(AL)R
repetitive drain-source
avalanche energy
see Figure 3
[1] Continuous current is limited by package.
[2] Current is limited by power dissipation chip rating.
[3] Refer to document 9397 750 12572 for further information.
[4] Maximum value not quoted. Repetitive rating defined in avalanche rating figure.
[5] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[6] Repetitive avalanche rating limited by an average junction temperature of 170 °C.
[7] Refer to application note AN10273 for further information.
BUK764R0-55B
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 5 — 22 April 2011
3 of 14
BUK764R0-55B
Nexperia
N-channel TrenchMOS standard level FET
001aaf871
03na19
200
120
I
D
P
(%)
der
(A)
150
80
100
50
0
(1)
40
0
0
50
100
150
200
25
75
125
175
T
mb
(°C)
T
mb
(°C)
(1) Capped at 75 A due to package.
Fig 1. Continuous drain current as a function of
mounting base temperature.
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aab677
102
IAL
(1)
(A)
10
1
(2)
(3)
10-1
10-3
10-2
10-1
1
10
tAL (ms)
(1) Single-pulse; Tj = 25 °C.
(2) Single-pulse; Tj = 150 °C.
(3) Repetitive
Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time.
BUK764R0-55B
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 5 — 22 April 2011
4 of 14
BUK764R0-55B
Nexperia
N-channel TrenchMOS standard level FET
03ng55
103
tp = 10 μs
ID
Limit RDSon = VDS / ID
(A)
102
100 μs
(1)
1 ms
DC
10 ms
10
100 ms
1
10-1
1
10
102
VDS (V)
(1) Capped at 75 A due to package.
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from junction to see Figure 5
mounting base
-
-
0.5
K/W
Rth(j-a)
thermal resistance from junction to mounted on a printed-circuit
-
50
-
K/W
ambient
board; minimum footprint
03ng56
1
Zth(j-mb)
(K/W)
δ
= 0.5
0.2
0.1
10-1
10-2
10-3
0.05
tp
P
δ =
T
0.02
single shot
t
tp
T
10-6
10-5
10-4
10-3
10-2
10-1
1
tp (s)
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK764R0-55B
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 5 — 22 April 2011
5 of 14
BUK764R0-55B
Nexperia
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
55
50
2
-
-
V
V
V
-
-
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
3
4
voltage
see Figure 11
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 11
-
-
-
4.4
-
V
V
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 11
1
IDSS
drain leakage current
gate leakage current
VDS = 55 V; VGS = 0 V; Tj = 175 °C
VDS = 55 V; VGS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
-
-
-
-
-
500
1
µA
µA
nA
nA
mΩ
0.02
IGSS
2
2
-
100
100
8
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 175 °C;
see Figure 7; see Figure 12
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 7; see Figure 12
-
3.4
4
mΩ
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
ID = 25 A; VDS = 44 V; VGS = 10 V;
Tj = 25 °C; see Figure 13
-
-
-
-
-
-
86
18
25
-
-
-
nC
nC
nC
gate-source charge
gate-drain charge
input capacitance
output capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 14
5082 6776 pF
1054 1265 pF
Coss
Crss
reverse transfer
capacitance
450
617
pF
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 30 V; RL = 1.2 Ω; VGS = 10 V;
RG(ext) = 10 Ω; Tj = 25 °C
-
-
-
-
-
23
51
71
41
2.5
-
-
-
-
-
ns
ns
ns
ns
nH
turn-off delay time
fall time
LD
internal drain
inductance
from upper edge of drain mounting base
to centre of die; Tj = 25 °C
from drain lead 6 mm from package to
centre of die; Tj = 25 °C
-
-
4.5
7.5
-
-
nH
nH
LS
internal source
inductance
from source lead to source bond pad;
Tj = 25 °C
Source-drain diode
VSD
source-drain voltage
IS = 40 A; VGS = 0 V; Tj = 25 °C;
see Figure 15
-
0.85
1.2
V
trr
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs;
-
-
95
-
-
ns
VGS = -10 V; VDS = 30 V; Tj = 25 °C
Qr
recovered charge
251
nC
BUK764R0-55B
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 5 — 22 April 2011
6 of 14
BUK764R0-55B
Nexperia
N-channel TrenchMOS standard level FET
03nh22
03nh21
300
7
6
5
4
3
7
ID
20
10
6.5
RDSon
(mΩ)
(A)
250
6
5.5
200
150
100
50
5
4.5
VGS (V) = 4
0
0
2
4
6
8
10
5
10
15
20
VGS (V)
VDS (V)
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
03aa35
03nh19
−1
10
120
gfs
I
D
(S)
100
(A)
min
typ
max
−2
−3
−4
−5
−6
10
80
60
40
20
0
10
10
10
10
0
20
40
60
0
2
4
6
I
D (A)
V
GS
(V)
Fig 8. Sub-threshold drain current as a function of
gate-source voltage
Fig 9. Forward transconductance as a function of
drain current; typical values
BUK764R0-55B
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 5 — 22 April 2011
7 of 14
BUK764R0-55B
Nexperia
N-channel TrenchMOS standard level FET
03aa32
03nh20
5
100
ID
V
GS(th)
(V)
(A)
4
3
2
1
0
80
60
40
20
max
typ
min
Tj = 175 °C
Tj = 25 °C
0
0
2
4
6
−60
0
60
120
180
V
GS (V)
T (°C)
j
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 11. Gate-source threshold voltage as a function of
junction temperature
03ne89
03nh18
2
10
VGS
(V)
8
a
1.5
6
VDS (V) = 14
VDS (V) = 44
1
0.5
0
4
2
0
0
20
40
60
80
100
-60
0
60
120
180
T ( C)
°
QG (nC)
j
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 13. Gate-source voltage as a function of turn-on
gate charge; typical values
BUK764R0-55B
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 5 — 22 April 2011
8 of 14
BUK764R0-55B
Nexperia
N-channel TrenchMOS standard level FET
03nh17
03nh24
7000
C
100
ID
(A)
(pF)
6000
Ciss
80
60
40
20
0
5000
4000
3000
2000
1000
Coss
Tj = 175 °C
Tj = 25 °C
Crss
0
10-1
1
10
102
0.0
0.2
0.4
0.6
0.8
1.0
SD (V)
VDS (V)
V
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 15. Reverse diode current as a function of reverse
diode voltage; typical values
BUK764R0-55B
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 5 — 22 April 2011
9 of 14
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Nexperia
N-channel TrenchMOS standard level FET
7. Package outline
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)
SOT404
A
A
E
1
mounting
base
D
1
D
H
D
2
L
p
1
3
c
b
e
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
D
E
A
A
b
UNIT
c
D
e
L
H
Q
1
1
p
D
max.
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
1.60
1.20
10.30
9.70
2.90 15.80 2.60
2.10 14.80 2.20
mm
11
2.54
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
05-02-11
06-03-16
SOT404
Fig 16. Package outline SOT404 (D2PAK)
BUK764R0-55B
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 5 — 22 April 2011
10 of 14
BUK764R0-55B
Nexperia
N-channel TrenchMOS standard level FET
8. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BUK764R0-55B v.5
Modifications:
20110422
Product data sheet
-
BUK75_764R0-55B_4
• The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Type number BUK764R0-55B separated from data sheet BUK75_764R0-55B_4.
BUK75_764R0-55B_4 20071004
Product data sheet
-
BUK75_764R0-55B_3
BUK764R0-55B
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 5 — 22 April 2011
11 of 14
BUK764R0-55B
Nexperia
N-channel TrenchMOS standard level FET
9. Legal information
9.1 Data sheet status
Document status [1] [2]
Product status [3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nexperia.com.
Right to make changes — Nexperia reserves the right to make
9.2 Definitions
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Suitability for use in automotive applications — This Nexperia
product has been qualified for use in automotive
applications. The product is not designed, authorized or warranted to be
suitable for use in medical, military, aircraft, space or life support equipment,
nor in applications where failure or malfunction of a Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia accepts no
liability for inclusion and/or use of Nexperia products in such
equipment or applications and therefore such inclusion and/or use is at the
customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the Nexperia
product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
9.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications and
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
BUK764R0-55B
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 5 — 22 April 2011
12 of 14
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Nexperia
N-channel TrenchMOS standard level FET
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
Terms and conditions of commercial sale — Nexperia
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nexperia.com/profile/terms, unless
otherwise agreed in a valid written individual agreement. In case an
individual agreement is concluded only the terms and conditions of the
respective agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
10. Contact information
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
BUK764R0-55B
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 5 — 22 April 2011
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Nexperia
N-channel TrenchMOS standard level FET
11. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . .12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
9.1
9.2
9.3
9.4
10
Contact information. . . . . . . . . . . . . . . . . . . . . .13
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 22 April 2011
相关型号：
BUK7656-30
TRANSISTOR 24 A, 30 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
NXP
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