BUK4D110-20P [NEXPERIA]
20 V, P-channel Trench MOSFETProduction;型号: | BUK4D110-20P |
厂家: | Nexperia |
描述: | 20 V, P-channel Trench MOSFETProduction |
文件: | 总15页 (文件大小:294K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BUK4D110-20P
20 V, P-channel Trench MOSFET
7 July 2020
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6
(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
•
Extended temperature range Tj = 175 °C
•
•
•
•
•
Trench MOSFET technology
Very fast switching
Side wettable flanks for optical solder inspection
ElectroStatic Discharge (ESD) protection > 1 kV HBM (class H1C)
AEC-Q101 qualified
3. Applications
•
•
•
•
DC to DC conversion
High-speed line driver
High-side load switch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
VDS
VGS
ID
Parameter
Conditions
Min
Typ
Max
-20
12
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
-
-12
V
VGS = -4.5 V; Tsp = 25 °C
-
-
-6.7
7.5
A
Ptot
total power dissipation Tsp = 25 °C
W
Static characteristics
RDSon drain-source on-state
resistance
VGS = -4.5 V; ID = -3.4 A; Tj = 25 °C
-
88
110
mΩ
Nexperia
BUK4D110-20P
20 V, P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
Description
drain
Simplified outline
Graphic symbol
D
D
D
G
S
D
D
D
S
1
6
5
4
2
drain
7
2
3
Transparent top view
3
gate
G
4
source
drain
8
5
6
drain
DFN2020MD‑6 (SOT1220)
S
017aaa259
7
drain
8
source
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
BUK4D110-20P
DFN2020MD‑6 plastic, leadless thermal enhanced ultra thin small outline
package with side-wettable flanks (SWF); 6 terminals; 0.65 mm
pitch; 2 mm x 2 mm x 0.65 mm body
SOT1220
7. Marking
Table 4. Marking codes
Type number
Marking code
BUK4D110-20P
6N
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BUK4D110-20P
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Nexperia B.V. 2020. All rights reserved
Product data sheet
7 July 2020
2 / 15
Nexperia
BUK4D110-20P
20 V, P-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
-20
12
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
VGS
-12
V
ID
VGS = -4.5 V; Tsp = 25 °C
VGS = -4.5 V; Tsp = 100 °C
VGS = -4.5 V; Tamb = 25 °C
Tsp = 25 °C; single pulse; tp ≤ 10 µs
Tsp = 25 °C
-
-6.7
-4.2
-3.4
-27
7.5
2
A
-
A
[1]
[1]
-
A
IDM
Ptot
peak drain current
-
A
total power dissipation
-
W
W
°C
°C
°C
Tamb = 25 °C
-
Tj
junction temperature
ambient temperature
storage temperature
-55
-55
-65
175
175
175
Tamb
Tstg
Source-drain diode
IS
source current
Tsp = 25 °C
-
-
-
-6.7
-1.9
-27
A
A
A
Tamb = 25 °C
[1]
[2]
ISM
peak source current
single pulse; tp ≤ 10 µs; Tsp = 25 °C
ESD maximum rating
VESD electrostatic discharge
voltage
Avalanche ruggedness
EDS(AL)S non-repetitive drain-
HBM
-
-
1000
5
V
Tj(init) = 25 °C; ID = -0.5 A; DUT in
mJ
source avalanche energy avalanche (unclamped)
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2.
[2] Measured between all pins.
aaa-030123
aaa-030124
120
120
P
der
(%)
I
der
(%)
80
80
40
40
0
-75
0
-75
25
125
225
25
125
225
T
sp
(°C)
T
sp
(°C)
Fig. 1. Normalized total power dissipation as a
function of solder point temperature
Fig. 2. Normalized continuous drain current as a
function of solder point temperature
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BUK4D110-20P
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Nexperia B.V. 2020. All rights reserved
Product data sheet
7 July 2020
3 / 15
Nexperia
BUK4D110-20P
20 V, P-channel Trench MOSFET
aaa-031728
2
-10
I
D
(A)
t
= 10 µs
Limit R
DSon
= V /I
DS
p
D
-10
100 µs
1 ms
-1
-1
DC; T = 25 °C
sp
10 ms
-10
DC; T
= 25 °C;
amb
drain mounting pad 6 cm
2
100 ms
-2
-10
-10
-3
-1
-10
2
-1
-10
-10
V
(V)
DS
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
©
BUK4D110-20P
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Nexperia B.V. 2020. All rights reserved
Product data sheet
7 July 2020
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Nexperia
BUK4D110-20P
20 V, P-channel Trench MOSFET
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1]
-
66
76
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
-
15
20
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2.
aaa-029462
2
10
Z
th(j-sp)
(K/W)
duty cycle = 1
0.75
10
0.50
0.33
0.20
0.25
0.10
0.05
0.01
1
0.02
0
-1
10
-5
-4
-3
10
-2
10
10
10
t
p
(s)
Fig. 4. Transient thermal impedance from junction to solder point as a function of pulse duration; typical values
aaa-029463
2
10
duty cycle = 1
0.75
0.50
0.25
0.10
Z
th(j-a)
(K/W)
0.33
0.20
0.05
10
0.02
0.01
0
1
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 6 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
BUK4D110-20P
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Nexperia B.V. 2020. All rights reserved
Product data sheet
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Nexperia
BUK4D110-20P
20 V, P-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Static characteristics
V(BR)DSS drain-source
breakdown voltage
Parameter
Conditions
Min
Typ
Max
Unit
ID = -250 µA; VGS = 0 V; Tj = 25 °C
-20
-
-
V
V
VGSth
gate-source threshold ID = -250 µA; VDS=VGS; Tj = 25 °C
voltage
-0.6
-0.95 -1.3
IDSS
drain leakage current
VDS = -20 V; VGS = 0 V; Tj = 25 °C
VDS = -20 V; VGS = 0 V; Tj = 125 °C
VGS = -12 V; VDS = 0 V; Tj = 25 °C
VGS = 12 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C
VGS = -8 V; ID = -3.4 A; Tj = 25 °C
VGS = -8 V; ID = -3.4 A; Tj = 175 °C
VGS = -4.5 V; ID = -3.4 A; Tj = 25 °C
VGS = -2.5 V; ID = -1 A; Tj = 25 °C
VDS = -10 V; ID = -3.4 A; Tj = 25 °C
-
-
-
-
-
-
-
-
-
-
-
-
-1
µA
µA
µA
µA
µA
µA
mΩ
mΩ
mΩ
mΩ
S
-
-20
-10
10
-2
IGSS
gate leakage current
-
-
-
-
2
RDSon
drain-source on-state
resistance
75
116
88
138
6
96
148
110
189
-
gfs
forward
transconductance
RG
gate resistance
f = 1 MHz
-
36
-
Ω
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
VDS = -10 V; ID = -3.2 A; VGS = -4.5 V;
Tj = 25 °C
-
-
-
-
-
-
3.6
0.8
1.2
365
49
5
-
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
-
VDS = -10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
-
Coss
Crss
-
reverse transfer
capacitance
39
-
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = -10 V; ID = -3.2 A; VGS = -4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
4
7
9
7
-
-
-
-
ns
ns
ns
ns
turn-off delay time
fall time
Source-drain diode
VSD
trr
source-drain voltage
IS = -2 A; VGS = 0 V; Tj = 25 °C
-
-
-
-0.9
9
-1.2
V
reverse recovery time IS = -2 A; dIS/dt = 100 A/µs; VGS = 0 V;
-
-
ns
nC
VDS = -10 V; Tj = 25 °C
Qr
recovered charge
2
©
BUK4D110-20P
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Nexperia B.V. 2020. All rights reserved
Product data sheet
7 July 2020
6 / 15
Nexperia
BUK4D110-20P
20 V, P-channel Trench MOSFET
aaa-031729
aaa-031718
-3
-4
-5
-6
-16
-10
I
D
(A)
I
D
V
= -8.0 V
GS
-4.5 V
(A)
-12
min
typ
max
-3.0 V
-10
-8
-4
0
-2.4 V
-10
-10
-2.0 V
-1.6 V
0
-1
-2
-3
-4
0
-0.5
-1.0
-1.5
-2.0
V
(V)
V
(V)
GS
DS
Tj = 25 °C
Tj = 25 °C; VDS = -5 V
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
aaa-031730
aaa-031731
400
400
-2.0 V
R
DSon
R
DSon
-2.4 V
-2.6 V
320
320
-3.0 V
240
160
80
240
160
80
T = 175 °C
j
-4.5 V
= -8.0 V
V
T = 25 °C
j
GS
0
0
0
-4
-8
-12
-16
0
-4
-8
-12
I
D
(A)
V
(V)
GS
Tj = 25 °C
ID = -3.4 A
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values
of gate-source voltage; typical values
©
BUK4D110-20P
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Nexperia B.V. 2020. All rights reserved
Product data sheet
7 July 2020
7 / 15
Nexperia
BUK4D110-20P
20 V, P-channel Trench MOSFET
aaa-031732
aaa-031722
-15
2.0
1.5
1.0
0.5
0
a
I
D
(A)
T = 175 °C
j
-10
T = 25 °C
j
-5
0
0
-1
-2
-3
-4
-60
0
60
120
180
V
(V)
T (°C)
j
GS
VDS = -5 V
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
aaa-031723
aaa-031724
3
-2.0
10
V
GSth
(V)
C
(pF)
C
iss
-1.5
-1.0
-0.5
0
max
typ
2
10
C
C
oss
rss
min
10
-1
-10
2
-60
0
60
120
180
-1
-10
-10
T (°C)
j
V
(V)
DS
ID = -250 µA; VDS = VGS
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances
junction temperature
as a function of drain-source voltage; typical
values
©
BUK4D110-20P
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Nexperia B.V. 2020. All rights reserved
Product data sheet
7 July 2020
8 / 15
Nexperia
BUK4D110-20P
20 V, P-channel Trench MOSFET
aaa-031725
-5
V
(V)
V
GS
DS
-4
I
D
-3
-2
-1
V
V
GS(pl)
GS(th)
V
GS
Q
GS2
Q
GS1
0
0
Q
Q
GS
GD
1
2
3
4
Q
G
(nC)
Q
G(tot)
003aaa508
ID = -3.2 A; VDS = -10 V; Tj = 25 °C
Fig. 15. Gate charge waveform definitions
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
aaa-031733
-8
I
S
(A)
-6
-4
-2
0
T = 175 °C
j
T = 25 °C
j
0
-0.4
-0.8
-1.2
V
(V)
SD
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
©
BUK4D110-20P
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
7 July 2020
9 / 15
Nexperia
BUK4D110-20P
20 V, P-channel Trench MOSFET
11. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 17. Duty cycle definition
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
©
BUK4D110-20P
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Nexperia B.V. 2020. All rights reserved
Product data sheet
7 July 2020
10 / 15
Nexperia
BUK4D110-20P
20 V, P-channel Trench MOSFET
12. Package outline
DFN2020MD-6: plastic thermal enhanced ultra thin small outline package; no leads;
6 terminals; body 2 x 2 x 0.65 mm
SOT1220
(8×)
pin 1
index area
B
A
D
E
A
T (6×)
A
y
1
1
detail X
solderable lead
end protrusion
max. 0.02 mm (6×)
C
L
p
y
E
2
C
D
2
4
5
3
2
J
1
e
J
bp (6×)
D
1
e
v
A B
1
6
pin 1
index area
X
E
1
0
2 mm
scale
e
Dimensions (mm are the original dimensions)
Unit bp
min 0.25 1.9 1.0
0.65 0.04 0.35 2.1 1.2
A
A
D
D
1
D
E
E
E
J
J
1
L
T
v
y
y
1
1
2
1
2
p
0.2 1.9 1.1 0.51
0.3 2.1 1.3 0.61
0.2 0.10
0.16 0.1 0.05 0.1
0.3 0.22
nom
max
mm
0.65 0.27 0.64
Note
1. Dimension A is including plating thickness.
sot1220_po
References
Outline
version
IEC
European
projection
Issue date
JEDEC
JEITA
18-05-30
18-06-07
SOT1220
Fig. 18. Package outline DFN2020MD‑6 (SOT1220)
©
BUK4D110-20P
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Nexperia B.V. 2020. All rights reserved
Product data sheet
7 July 2020
11 / 15
Nexperia
BUK4D110-20P
20 V, P-channel Trench MOSFET
13. Soldering
Footprint information for reflow soldering of DFN2020MD-6 package
SOT1220
0.33 (6×)
0.43 (6×)
0.53 (6×)
0.76
0.66
0.56
0.25 0.35 0.45
0.775
0.285
0.65
2.06
1.25
0.35 (6×)
0.65
1.35
1.05
0.25 (6×)
0.45 (6×)
0.9
1.1
1.2
0.935
0.935
2.5
solder land
solder land plus solder paste
solder paste deposit
occupied area
solder resist
Dimensions in mm
sot1220_fr
Fig. 19. Reflow soldering footprint for DFN2020MD‑6 (SOT1220)
©
BUK4D110-20P
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Product data sheet
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Nexperia
BUK4D110-20P
20 V, P-channel Trench MOSFET
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
20200707
Data sheet status
Change notice
Supersedes
BUK4D110-20P v.1
Product data sheet
-
-
©
BUK4D110-20P
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Product data sheet
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13 / 15
Nexperia
BUK4D110-20P
20 V, P-channel Trench MOSFET
equipment, nor in applications where failure or malfunction of an Nexperia
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severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
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15. Legal information
Data sheet status
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Document status Product
Definition
[1][2]
status [3]
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
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Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
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©
BUK4D110-20P
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
7 July 2020
14 / 15
Nexperia
BUK4D110-20P
20 V, P-channel Trench MOSFET
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 5
10. Characteristics............................................................6
11. Test information........................................................10
12. Package outline........................................................ 11
13. Soldering................................................................... 12
14. Revision history........................................................13
15. Legal information......................................................14
© Nexperia B.V. 2020. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 7 July 2020
©
BUK4D110-20P
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
7 July 2020
15 / 15
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