BC857BV [NEXPERIA]
45 V, 100 mA PNP general purpose double transistorProduction;型号: | BC857BV |
厂家: | Nexperia |
描述: | 45 V, 100 mA PNP general purpose double transistorProduction 光电二极管 晶体管 |
文件: | 总8页 (文件大小:185K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BC857BV
45 V, 100 mA PNP general purpose double transistor
27 December 2022
Product data sheet
1. General description
PNP double transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic
package.
NPN complement: BC847BV
2. Features and benefits
•
300 mW total power dissipation
•
•
Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin package
Reduces number of components as replacement of two SC-75/SC-89 packaged BISS
transistors
•
•
Reduces required board space
Reduces pick and place costs
3. Applications
•
General purpose switching and amplification
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
VCEO
collector-emitter
voltage
open base
-
-
-45
V
IC
collector current
DC current gain
-
-
-
-100
450
mA
hFE
VCE = -5 V; IC = -2 mA; Tamb = 25 °C
200
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
E1
Description
emitter TR1
base TR1
Simplified outline
Graphic symbol
C1 B2
E2
6
5
4
2
B1
TR2
3
C2
collector TR2
emitter TR2
base TR2
TR1
4
E2
5
B2
E1
B1 C2
1
2
3
SOT666
6
C1
collector TR1
sym138
Nexperia
BC857BV
45 V, 100 mA PNP general purpose double transistor
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
BC857BV
SOT666
plastic, surface-mounted package; 6 leads; 0.5 mm pitch; SOT666
1.6 mm x 1.2 mm x 0.55 mm body
7. Marking
Table 4. Marking codes
Type number
Marking code
3F
BC857BV
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor
VCBO
VCEO
VEBO
IC
collector-base voltage
open emitter
-
-
-
-
-
-
-
-50
V
collector-emitter voltage open base
-45
V
emitter-base voltage
collector current
open collector
-5
V
-100
-200
-200
200
mA
mA
mA
mW
ICM
peak collector current
peak base current
total power dissipation
single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C
IBM
Ptot
[1]
[1]
Per device
Ptot
total power dissipation
junction temperature
ambient temperature
storage temperature
Tamb ≤ 25 °C
-
300
150
150
150
mW
°C
Tj
-
Tamb
Tstg
-65
-65
°C
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided, 35 µm copper, tin-plated and standard footprint.
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1] [2]
-
-
416
K/W
[1] Device mounted on an FR4 PCB, single-sided, 35 µm copper, tin-plated and standard footprint.
[2] The only recommended soldering method is reflow soldering.
©
BC857BV
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
27 December 2022
2 / 8
Nexperia
BC857BV
45 V, 100 mA PNP general purpose double transistor
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
ICBO
collector-base cut-off
current
VCB = -30 V; IE = 0 A; Tamb = 25 °C
VCB = -30 V; IE = 0 A; Tj = 150 °C
VEB = -5 V; IC = 0 A; Tamb = 25 °C
-
-
-
-
-
-
-15
-5
nA
µA
nA
IEBO
emitter-base cut-off
current
-100
hFE
DC current gain
VCE = -5 V; IC = -2 mA; Tamb = 25 °C
IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C
200
-
-
-
450
VCEsat
collector-emitter
saturation voltage
-
-
-100
-400
mV
mV
IC = -100 mA; IB = -5 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
VBEsat
base-emitter saturation IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C [1]
voltage
-
-755
-
mV
VBE
Cc
base-emitter voltage
collector capacitance
VCE = -5 V; IC = -2 mA; Tamb = 25 °C
-600
-
-655
-
-750
2.2
mV
pF
VCB = -10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
Ce
fT
emitter capacitance
transition frequency
VEB = -500 mV; IC = 0 A; ic = 0 A;
f = 1 MHz; Tamb = 25 °C
-
10
-
-
-
pF
VCE = -5 V; IC = -10 mA; f = 100 MHz;
Tamb = 25 °C
100
MHz
[1] VBEsat decreases by about 1.7 mV/K with increasing temperature.
mhb975
mhb976
1000
- 1200
V
(mV)
BE
h
FE
- 1000
800
(1)
(2)
- 800
- 600
- 400
600
400
200
0
(1)
(2)
(3)
(3)
- 200
0
- 2
- 1
2
I
3
- 2
- 1
2
I
3
- 10
- 10
1
10
10
10
- 10
- 10
- 1
- 10
- 10
- 10
(mA)
(mA)
C
C
VCE = -5 V
VCE = -5 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig. 1. DC current gain as a function of collector
current; typical values
Fig. 2. Base-emitter voltage as a function of collector
current; typical value
©
BC857BV
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
27 December 2022
3 / 8
Nexperia
BC857BV
45 V, 100 mA PNP general purpose double transistor
mhb977
mhb978
4
- 10
- 1200
BEsat
(mV)
V
V
CEsat
(mV)
- 1000
(1)
(2)
3
- 10
- 800
- 600
- 400
- 200
0
(3)
2
- 10
(1)
(2)
(3)
- 10
- 10
- 1
2
3
- 1
2
3
- 1
- 10
- 10
- 10
- 10
- 1
- 10
- 10
- 10
I
(mA)
C
I
(mA)
C
IC/IB = 20
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig. 3. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig. 4. Base-emitter saturation voltage as a function of
collector current; typical values
11. Package outline
1.7
1.5
0.6
0.5
6
5
4
0.3
0.1
1.7 1.3
1.5 1.1
pin 1 index
1
2
3
0.18
0.08
0.27
0.17
0.5
1
Dimensions in mm
04-11-08
Fig. 5. Package outline SOT666
©
BC857BV
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
27 December 2022
4 / 8
Nexperia
BC857BV
45 V, 100 mA PNP general purpose double transistor
12. Soldering
2.75
2.45
2.1
1.6
solder lands
0.4
(6×)
0.3
(2×)
0.25
(2×)
placement area
0.538
0.55
(2×)
1.075
1.7
2
solder paste
occupied area
0.325 0.375
(4×) (4×)
Dimensions in mm
1.7
0.45
(4×)
0.6
(2×)
0.5
(4×)
0.65
(2×)
sot666_fr
Fig. 6. Reflow soldering footprint for SOT666
©
BC857BV
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
27 December 2022
5 / 8
Nexperia
BC857BV
45 V, 100 mA PNP general purpose double transistor
13. Revision history
Table 8. Revision history
Data sheet ID
BC857BV v.3
Modifications:
Release date
20221227
Data sheet status
Change notice
Supersedes
Product data sheet
-
BC857BV v.2
•
The format of this data sheet has been redesigned to comply with the identity guidelines of
Nexperia.
•
•
Legal texts have been adapted to the new company name where appropriate.
Product(s) changed to non-automotive qualification.
BC857BV v.2
BC857BV v.1
20011107
20010810
Product data sheet
Product data sheet
-
-
BC857BV v.1
-
©
BC857BV
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
27 December 2022
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Nexperia
BC857BV
45 V, 100 mA PNP general purpose double transistor
injury, death or severe property or environmental damage. Nexperia and its
suppliers accept no liability for inclusion and/or use of Nexperia products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
14. Legal information
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Data sheet status
Document status Product
Definition
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
[1][2]
status [3]
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
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and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
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avoid a default of the applications and the products or of the application or
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liability in this respect.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
Definitions
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Draft — The document is a draft version only. The content is still under
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Limited warranty and liability — Information in this document is believed
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In the event that customer uses the product for design-in and use in
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customer (a) shall use the product without Nexperia’s warranty of the
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©
BC857BV
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
27 December 2022
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Nexperia
BC857BV
45 V, 100 mA PNP general purpose double transistor
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................1
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 2
9. Thermal characteristics............................................... 2
10. Characteristics............................................................3
11. Package outline.......................................................... 4
12. Soldering..................................................................... 5
13. Revision history..........................................................6
14. Legal information........................................................7
© Nexperia B.V. 2022. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 27 December 2022
©
BC857BV
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
27 December 2022
8 / 8
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