BC847BQB-Q [NEXPERIA]
45 V, 100 mA NPN general-purpose transistorProduction;
| 型号： | BC847BQB-Q |
| 厂家： | 
Nexperia |
| 描述： | 45 V, 100 mA NPN general-purpose transistorProduction |
| 文件： | 总13页 (文件大小：236K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC847xQB-Q series
45 V, 100 mA NPN general-purpose transistor
Rev. 3 — 8 September 2021
Product data sheet
1. General description
NPN general-purpose transistor in an ultra small DFN1110D-3 (SOT8015) leadless Surface-
Mounted Device (SMD) plastic package with side-wettable flanks.
Table 1. Product overview
Type number
Package
Nexperia
SOT8015
PNP complement:
JEDEC
BC847AQB-Q
BC847BQB-Q
BC847CQB-Q
MO-340BA
BC857AQB-Q
BC857BQB-Q
BC857CQB-Q
2. Features and benefits
•
•
•
•
•
High power dissipation capability
Suitable for Automatic Optical Inspection (AOI) of solder joint
Smaller footprint compared to conventional leaded SMD packages
Low package height of 0.5 mm
Qualified according to AEC-Q101 and recommended for use in automotive applications
3. Applications
•
•
General-purpose switching and amplification
Space restricted applications
4. Quick reference data
Table 2. Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol
VCEO
IC
Parameter
Conditions
Min
Typ
Max
45
Unit
V
collector-emitter voltage
collector current
peak collector current
DC current gain
BC847AQB
open base
-
-
-
-
-
-
100
200
mA
mA
ICM
single pulse; tp ≤ 1 ms
VCE = 5 V; IC = 2 mA
hFE
110
200
420
-
-
-
220
450
800
BC847BQB
BC847CQB
Nexperia
BC847xQB-Q series
45 V, 100 mA NPN general-purpose transistor
5. Pinning information
Table 3. Pinning
Pin
1
Symbol
Description
base
Simplified outline
Graphic symbol
C
B
E
C
2
emitter
3
B
3
collector
E
1
2
sym021
Transparent top view
6. Ordering information
Table 4. Ordering information
Type number
Package
Name
Description
Version
BC847AQB-Q
BC847BQB-Q
BC847CQB-Q
DFN1110D-3
plastic leadless extremely thin small outline package with
side-wettable flanks (SWF); 3 terminals; 0.65 mm pitch;
body: 1.1 x 1.0 x 0.48 mm
SOT8015
7. Marking
Table 5. Marking
Type number
Marking code
BC847AQB-Q
BC847BQB-Q
BC847CQB-Q
A2
A3
A4
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BC847XQB-Q_SER
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Nexperia B.V. 2021. All rights reserved
Product data sheet
Rev. 3 — 8 September 2021
2 / 13
Nexperia
BC847xQB-Q series
45 V, 100 mA NPN general-purpose transistor
8. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Tamb = 25 °C unless otherwise specified.
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
open emitter
open base
Min
Max
50
Unit
V
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
-
-
45
V
open collector
-
6
V
-
100
200
100
340
420
150
150
150
mA
mA
mA
mW
mW
°C
ICM
peak collector current
peak base current
total power dissipation
single pulse; tp ≤ 1 ms
single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C
-
IBM
-
Ptot
[1]
[2]
-
-
Tj
junction temperature
ambient temperature
storage temperature
-
Tamb
Tstg
-55
-65
°C
°C
[1] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided 35 µm copper; tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB; single-sided 70 µm copper; tin-plated and standard footprint.
aaa-030584
500
P
tot
(mW)
(1)
(2)
400
300
200
100
0
-75
-25
25
75
125
175
(°C)
T
amb
(1) FR4 PCB; single-sided 70 µm copper, standard footprint
(2) FR4 PCB; single-sided 35 µm copper, standard footprint
Fig. 1. Power derating curves DFN1110D-3 (SOT8015)
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BC847XQB-Q_SER
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Nexperia B.V. 2021. All rights reserved
Product data sheet
Rev. 3 — 8 September 2021
3 / 13
Nexperia
BC847xQB-Q series
45 V, 100 mA NPN general-purpose transistor
9. Thermal characteristics
Table 7. Thermal characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
368
298
Unit
K/W
K/W
Rth(j-a)
thermal resistance from junction to ambient
in free air
[1]
[2]
-
-
-
-
[1] Device mounted on an FR4 PCB; single-sided 35 µm copper; tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB; single-sided 70 µm copper; tin-plated and standard footprint.
aaa-030582
3
10
duty cycle =
Z
th(j-a)
(K/W)
1
0.75
0.33
0.50
2
10
0.20
0.05
0.10
0.02
10
0.01
0
1
-5
10
-4
-3
-2
10
-1
2
3
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB; single-sided 35 µm copper, standard footprint
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-030583
3
10
duty cycle =
Z
th(j-a)
(K/W)
1
0.75
0.33
0.50
2
10
0.20
0.05
0.10
0.02
10
0.01
0
1
-5
10
-4
-3
-2
10
-1
2
3
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB; single-sided 70 µm copper, standard footprint
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
BC847XQB-Q_SER
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Nexperia B.V. 2021. All rights reserved
Product data sheet
Rev. 3 — 8 September 2021
4 / 13
Nexperia
BC847xQB-Q series
45 V, 100 mA NPN general-purpose transistor
10. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max Unit
V(BR)CBO
collector-base
breakdown voltage
IC = 100 µA; IE = 0 A
50
-
-
-
-
V
V
V
V(BR)CES
V(BR)EBO
ICBO
collector-emitter peak
voltage
IC = 2 mA; IE = 0 A
45
6
-
-
emitter-base
breakdown voltage
IE = 100 µA; IC = 0 A
collector-base cut-off
current
VCB = 30 V; IE = 0 A
-
-
-
-
-
-
15
5
nA
μA
nA
VCB = 30 V; IE = 0 A; Tj = 150 °C
VEB = 5 V; IC = 0 A
IEBO
hFE
emitter-base cut-off
current
100
DC current gain
BC847AQB-Q
BC847BQB-Q
BC847CQB-Q
VCE = 5 V; IC = 2 mA
110
200
420
-
-
220
450
800
200
400
700
770
-
-
-
VCEsat
collector-emitter
saturation voltage
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA
VCE = 5 V ; IC = 2 mA
VCE = 5 V ; IC = 10 mA
-
mV
mV
mV
mV
mV
mV
MHz
pF
[1]
-
-
VBE
base-emitter voltage
[2] 580
-
[2]
-
-
VBEsat
base-emitter saturation IC = 10 mA ; IB = 0.5 mA
voltage
-
760
IC = 100 mA ; IB = 5 mA
[1]
-
900
-
fT
transition frequency
collector capacitance
emitter capacitance
noise figure
VCE = 5 V; IC = 10 mA; f = 100 MHz
100
-
-
Cc
Ce
NF
VCB = 10 V; IE = ie = 0 A; f = 1 MHz
VEB = 0.5 V; IE = ie = 0 A; f = 1 MHz
-
-
-
-
1.5
-
11
-
pF
VCE = 5 V; IC = 200µA; RS = 2 kΩ; f = 1 kHz; B
= 200 Hz
10
dB
[1] pulsed; tp ≤ 300 μs; δ ≤ 0.02
[2] VBE decreases by about 2 mV/K with increasing temperature.
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BC847XQB-Q_SER
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Nexperia B.V. 2021. All rights reserved
Product data sheet
Rev. 3 — 8 September 2021
5 / 13
Nexperia
BC847xQB-Q series
45 V, 100 mA NPN general-purpose transistor
mgt723
mgt724
400
1200
V
BE
(mV)
1000
h
FE
(1)
300
(1)
(2)
800
600
400
200
0
(2)
(3)
200
100
0
(3)
- 1
2
3
- 1
10
2
3
10
1
10
10
10
1
10
10
10
I
(mA)
I (mA)
C
C
VCE = 5 V
VCE = 5 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig. 4. BC847AQB-Q: DC current gain as a function of Fig. 5. BC847AQB-Q: Base-emitter voltage as a
collector current; typical values
function of collector current; typical values
mgt725
mgt726
3
10
1200
V
BEsat
(mV)
1000
V
(mV)
CEsat
(1)
(2)
800
600
400
200
0
2
10
(1)
(2)
(3)
(3)
10
10
- 1
2
3
- 1
2
3
10
1
10
10
10
1
10
10
10
I
(mA)
I
(mA)
C
C
IC/ IB= 10
IC/ IB= 20
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig. 7. BC847AQB-Q: Base-emitter saturation voltage
as a function of collector current; typical values
Fig. 6. BC847AQB-Q: Collector-emitter saturation
voltage as a function of collector current;
typical values
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BC847XQB-Q_SER
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Nexperia B.V. 2021. All rights reserved
Product data sheet
Rev. 3 — 8 September 2021
6 / 13
Nexperia
BC847xQB-Q series
45 V, 100 mA NPN general-purpose transistor
mgt727
mgt728
600
1200
V
BE
(mV)
1000
h
FE
500
(1)
(2)
400
300
200
100
0
800
600
400
200
0
(1)
(2)
(3)
(3)
-1
10
2
3
- 2
- 1
2
3
1
10
10
10
10
10
1
10
10
10
I
(mA)
I
(mA)
C
C
VCE = 5 V
VCE = 5 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig. 8. BC847BQB-Q: DC current gain as a function of
collector current; typical values
Fig. 9. BC847BQB-Q: Base-emitter voltage as a
function of collector current; typical values
mgt729
mgt730
4
10
1200
V
BEsat
(mV)
1000
V
CEsat
(mV)
(1)
(2)
3
2
800
600
400
200
0
10
(3)
10
(1)
(3) (2)
10
10
- 1
2
3
- 1
2
3
10
1
10
10
10
1
10
10
10
I
(mA)
I
(mA)
C
C
IC/ IB= 10
IC/ IB= 20
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig. 11. BC847BQB-Q: Base-emitter saturation voltage
as a function of collector current; typical values
Fig. 10. BC847BQB-Q: Collector-emitter saturation
voltage as a function of collector current;
typical values
©
BC847XQB-Q_SER
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Nexperia B.V. 2021. All rights reserved
Product data sheet
Rev. 3 — 8 September 2021
7 / 13
Nexperia
BC847xQB-Q series
45 V, 100 mA NPN general-purpose transistor
mgt731
mgt732
1200
1200
V
BE
h
FE
(mV)
1000
1000
800
600
400
200
0
(1)
(1)
(2)
800
600
400
200
0
(2)
(3)
(3)
- 2
- 1
2
3
- 1
2
3
10
10
1
10
10
10
10
1
10
10
10
I
(mA)
I
(mA)
C
C
VCE = 5 V
VCE = 5 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig. 12. BC847CQB-Q: DC current gain as a function of
collector current; typical values
Fig. 13. BC847CQB-Q: Base-emitter voltage as a
function of collector current; typical values
mgt733
mgt734
4
10
1200
V
BEsat
(mV)
1000
V
CEsat
(mV)
(1)
(2)
3
2
800
600
400
200
0
10
(3)
10
(1)
(3) (2)
10
10
- 1
10
2
3
- 1
2
3
1
10
10
10
1
10
10
10
I
(mA)
I
(mA)
C
C
IC/ IB= 10
IC/ IB= 20
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig. 15. BC847CQB-Q: Base-emitter saturation voltage
as a function of collector current; typical values
Fig. 14. BC847CQB-Q: Collector-emitter saturation
voltage as a function of collector current;
typical values
11. Test information
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
©
BC847XQB-Q_SER
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Nexperia B.V. 2021. All rights reserved
Product data sheet
Rev. 3 — 8 September 2021
8 / 13
Nexperia
BC847xQB-Q series
45 V, 100 mA NPN general-purpose transistor
12. Package outline
1.1
0.50
0.44
0.04
max
0.65
0.30
0.22
0.27
0.20
1
2
0.20
1.0
0.48
0.40
3
0.95
0.87
0.22
0.10
Dimensions in mm
21-06-29
Fig. 16. Package outline DFN1110D-3 (SOT8015)
©
BC847XQB-Q_SER
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Nexperia B.V. 2021. All rights reserved
Product data sheet
Rev. 3 — 8 September 2021
9 / 13
Nexperia
BC847xQB-Q series
45 V, 100 mA NPN general-purpose transistor
13. Soldering
Footprint information for reflow soldering of DFN1110D-3 package
SOT8015
1.4
0.2
0.3
0.45
0.35
0.25
0.65
0.6
0.5
0.4
0.12 0.22
0.34 0.44
1.8
0.88 0.78 0.68
0.34
0.34
0.2
0.3
0.4
0.8
0.9
1.0
occupied area
solder resist
solder lands
solder paste
recommended stencil thickness: 0.1 mm
Dimensions in mm
19-11-27
Issue date
sot8015_fr
Fig. 17. Reflow soldering footprint for DFN1110D-3 (SOT8015)
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BC847XQB-Q_SER
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Nexperia B.V. 2021. All rights reserved
Product data sheet
Rev. 3 — 8 September 2021
10 / 13
Nexperia
BC847xQB-Q series
45 V, 100 mA NPN general-purpose transistor
14. Revision history
Table 9. Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
BC847XQB-Q_SER v.3 20210908
Product data sheet
-
BC847XQB-Q_SER v.2
Modifications:
•
•
Characteristics: Conditions corrected at Ce
Package outline: Drawing changed to minimized version
BC847XQB-Q_SER v.2 20210512
BC847XQB-Q_SER v.1 20210304
Product data sheet
Product data sheet
-
-
BC847XQB-Q_SER v.1
-
©
BC847XQB-Q_SER
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Product data sheet
Rev. 3 — 8 September 2021
11 / 13
Nexperia
BC847xQB-Q series
45 V, 100 mA NPN general-purpose transistor
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
15. Legal information
Data sheet status
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Document status Product
Definition
[1][2]
status [3]
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
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and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
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Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
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has been qualified for use in automotive applications. Unless otherwise
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Product data sheet
Rev. 3 — 8 September 2021
12 / 13
Nexperia
BC847xQB-Q series
45 V, 100 mA NPN general-purpose transistor
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 4
10. Characteristics............................................................5
11. Test information..........................................................8
12. Package outline.......................................................... 9
13. Soldering................................................................... 10
14. Revision history........................................................11
15. Legal information......................................................12
© Nexperia B.V. 2021. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 8 September 2021
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BC847XQB-Q_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
Rev. 3 — 8 September 2021
13 / 13
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