2PD2150 [NEXPERIA]
20 V, 3 A NPN low VCEsat (BISS) transistorProduction;
| 型号： | 2PD2150 |
| 厂家： | 
Nexperia |
| 描述： | 20 V, 3 A NPN low VCEsat (BISS) transistorProduction |
| 文件： | 总13页 (文件大小：745K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2PD2150
20 V, 3 A NPN low VCEsat (BISS) transistor
Rev. 02 — 2 January 2007
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power
SOT89 (SC-62/TO-243) flat lead Surface-Mounted Device (SMD) plastic package.
PNP complement: 2PB1424.
1.2 Features
I Low collector-emitter saturation voltage VCEsat
I High collector current capability IC and ICM
I High collector current gain (hFE) at high IC
I High efficiency due to less heat generation
I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I DC-to-DC conversion
I MOSFET gate driving
I Motor control
I Charging circuits
I Power switches (e.g. motors, fans)
I Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1.
Symbol Parameter
VCEO collector-emitter voltage
IC
Quick reference data
Conditions
Min
Typ
Max
20
3
Unit
V
open base
-
-
-
-
-
-
collector current
A
ICM
peak collector current
single pulse;
5
A
tp ≤ 1 ms
[1]
VCEsat
collector-emitter
IC = 2 A; IB = 0.1 A
-
0.2
0.5
V
saturation voltage
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2PD2150
Nexperia
20 V, 3 A NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pinning
Pin
1
Description
emitter
Simplified outline
Symbol
2
1
2
collector
base
3
3
3
2
1
sym042
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
2PD2150
SC-62
plastic surface-mounted package; collector pad for
good heat transfer; 3 leads
SOT89
4. Marking
Table 4.
Marking codes
Type number
Marking code
2PD2150
M2
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
open emitter
open base
Min
Max
40
20
6
Unit
V
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
-
-
-
-
-
V
open collector
V
3
A
ICM
peak collector current
single pulse;
5
A
tp ≤ 1 ms
[1]
[2]
Ptot
total power dissipation
Tamb ≤ 25 °C
-
0.5
W
-
2
W
Tj
junction temperature
ambient temperature
storage temperature
-
150
+150
+150
°C
°C
°C
Tamb
Tstg
−65
−65
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on a ceramic PCB, Al2O3, standard footprint.
2PD2150
© Nexperia B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 2 January 2007
2 of 13
2PD2150
Nexperia
20 V, 3 A NPN low VCEsat (BISS) transistor
006aaa943
2.4
(1)
P
tot
(W)
1.6
0.8
(2)
0
−75
−25
0
25
75
125
175
(°C)
T
amb
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, standard footprint
Fig 1. Power derating curves
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol Parameter
Conditions
Min
Typ
Max
250
62
Unit
K/W
K/W
[1]
Rth(j-a)
thermal resistance from
junction to ambient
in free air
-
-
-
-
[2]
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on a ceramic PCB, Al2O3, standard footprint.
2PD2150
© Nexperia B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 2 January 2007
3 of 13
2PD2150
Nexperia
20 V, 3 A NPN low VCEsat (BISS) transistor
006aaa944
3
10
duty cycle =
Z
th(j-a)
1
(K/W)
0.75
0.33
2
0.5
0.2
10
0.1
0.05
10
0.02
0.01
1
0
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aaa945
2
10
duty cycle =
1
Z
th(j-a)
0.75
(K/W)
0.5
0.2
0.33
10
0.1
0.05
0.02
0.01
1
0
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
Ceramic PCB, Al2O3, standard footprint
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
2PD2150
© Nexperia B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 2 January 2007
4 of 13
2PD2150
Nexperia
20 V, 3 A NPN low VCEsat (BISS) transistor
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions
ICBO collector-base cut-off
Min
Typ
Max
Unit
VCB = 30 V; IE = 0 A
VEB = 5 V; IC = 0 A
-
-
0.1
µA
current
IEBO
emitter-base cut-off
current
-
-
0.1
µA
hFE
DC current gain
VCE = 2 V; IC = 0.1 A
IC = 2 A; IB = 0.1 A
180
-
-
390
0.5
[1]
VCEsat
collector-emitter
0.2
V
saturation voltage
fT
transition frequency
VCE = 2 V; IE = −0.5 A;
f = 100 MHz
-
-
-
220
180
20
-
-
-
MHz
pF
pF
Cib
Cob
common-base input
capacitance
VEB = 5 V; IE = ie = 0 A;
f = 1 MHz
common-base output
capacitance
VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2PD2150
© Nexperia B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 2 January 2007
5 of 13
2PD2150
Nexperia
20 V, 3 A NPN low VCEsat (BISS) transistor
006aaa956
006aaa957
4
10
2.0
8
6
I
(mA) = 20
B
10
I
C
(A)
I
C
(mA)
18
16
14
12
1.6
3
2
10
1.2
0.8
0.4
0
4
2
(1) (2) (3)
10
10
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
(V)
0
0.2
0.4
0.6
0.8
1.0
(V)
V
V
BE
CE
VCE = 2 V
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 4. Collector current as a function of base-emitter
voltage; typical values
Fig 5. Collector current as a function of
collector-emitter voltage; typical values
006aaa958
006aaa959
3
5
10
30
25
50
45
40
35
(3)
(1) (2)
I
C
(A)
h
FE
4
3
2
1
0
20
15
2
10
10
10
I
(mA) = 5
B
1
2
3
4
0
1
2
3
4
5
1
10
10
10
10
V
(V)
I (mA)
C
CE
Tamb = 25 °C
VCE = 2 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 6. Collector current as a function of
collector-emitter voltage; typical values
Fig 7. DC current gain as a function of collector
current; typical values
2PD2150
© Nexperia B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 2 January 2007
6 of 13
2PD2150
Nexperia
20 V, 3 A NPN low VCEsat (BISS) transistor
006aaa960
006aaa961
1
1
V
V
CEsat
(V)
CEsat
(V)
−1
−1
−2
−3
10
10
(1)
(2)
(3)
(1)
(2)
(3)
−2
10
10
10
−3
10
2
3
4
2
3
4
1
10
10
10
10
1
10
10
10
10
I
(mA)
I (mA)
C
C
IC/IB = 10
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 8. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa962
006aaa963
3
1
10
V
f
T
(MHz)
CEsat
(V)
(1)
(2)
(3)
−1
2
10
10
−2
10
10
−3
10
1
2
3
4
2
3
1
10
10
10
10
−1
−10
−10
−10
I
(mA)
I (mA)
E
C
IC/IB = 50
Tamb = 25 °C; VCE = 2 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 11. Transition frequency as a function of emitter
current; typical values
2PD2150
© Nexperia B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 2 January 2007
7 of 13
2PD2150
Nexperia
20 V, 3 A NPN low VCEsat (BISS) transistor
006aaa964
006aaa965
3
3
10
10
C
ib
C
ob
(pF)
(pF)
2
2
10
10
10
10
10
10
−1
2
−1
2
1
10
10
1
10
10
V
(V)
V
(V)
CB
EB
Tamb = 25 °C; f = 1 MHz; IE = ie = 0 A
Tamb = 25 °C; f = 1 MHz; IE = ie = 0 A
Fig 12. Common-base input capacitance as a function
of emitter-base voltage; typical values
Fig 13. Common-base output capacitance as a
function of collector-base voltage; typical
values
2PD2150
© Nexperia B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 2 January 2007
8 of 13
2PD2150
Nexperia
20 V, 3 A NPN low VCEsat (BISS) transistor
8. Package outline
4.6
4.4
1.8
1.4
1.6
1.4
2.6
2.4
4.25
3.75
1.2
0.8
1
2
3
0.53
0.40
0.48
0.35
0.44
0.23
1.5
3
Dimensions in mm
06-08-29
Fig 14. Package outline SOT89 (SC-62/TO-243)
9. Packing information
Please refer to packing information on www.nexperia.com.
2PD2150
© Nexperia B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 2 January 2007
9 of 13
2PD2150
Nexperia
20 V, 3 A NPN low VCEsat (BISS) transistor
10. Soldering
4.75
2.25
2.00
1.90
1.20
solder lands
solder resist
0.85
0.20
1.20
1.20
occupied area
1.70
solder paste
4.60
4.85
Dimensions in mm
0.50
1.20
1.00
(3x)
3
2
1
msa442
0.60 (3x)
0.70 (3x)
3.70
3.95
SOT89 standard mounting conditions for reflow soldering
Fig 15. Reflow soldering footprint SOT89 (SC-62/TO-243)
6.60
2.40
3.50
2
solder lands
solder resist
7.60
0.50
1.20
3
1
occupied area
3.00
Dimensions in mm
preferred transport direction during soldering
msa423
1.50
0.70
5.30
Not recommended for wave soldering
Fig 16. Wave soldering footprint SOT89 (SC-62/TO-243)
2PD2150
© Nexperia B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 2 January 2007
10 of 13
2PD2150
Nexperia
20 V, 3 A NPN low VCEsat (BISS) transistor
11. Revision history
Table 9.
Revision history
Document ID
2PD2150_2
Release date
Data sheet status
Change notice
Supersedes
20070102
Product data sheet
-
2PD2150_1
Modifications:
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Table 1 “Quick reference data”: IC collector current added
• Table 1 “Quick reference data”: ICM peak collector current maximum value adapted
• Table 1 “Quick reference data”: VCEsat collector-emitter saturation voltage added
• Table 5 “Limiting values”: VCEO collector-emitter voltage maximum value adapted
• Table 5 “Limiting values”: IC collector current maximum value adapted
• Table 5 “Limiting values”: ICM peak collector current maximum value adapted
• Table 5 “Limiting values”: Ptot total power dissipation for ceramic PCB condition added
• Figure 1 “Power derating curves”: adapted
• Table 6 “Thermal characteristics”: adapted
• Table 6 “Thermal characteristics”: Rth(j-a) thermal resistance from junction to ambient for
ceramic PCB condition added
• Figure 2: tp pulse time redefined to pulse duration
• Figure 3: added
• Table 7 “Characteristics”: VCEsat collector-emitter saturation voltage typical value added
• Table 7 “Characteristics”: fT transition frequency conditions slightly changed
• Table 7 “Characteristics”: Cib common-base input capacitance added
• Table 7 “Characteristics”: Cob common-base output capacitance added
• Figure 4, 6, 10, 11, 12, 13 and 16: added
• Figure 5, 7, 8 and 9: adapted
• Section 12 “Legal information”: updated
2PD2150_1
20050422
Product data sheet
-
-
2PD2150
© Nexperia B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 2 January 2007
11 of 13
2PD2150
Nexperia
20 V, 3 A NPN low VCEsat (BISS) transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nexperia.com.
malfunction of a Nexperia product can reasonably be expected to result in
12.2 Definitions
personal injury, death or severe property or environmental damage. Nexperia
accepts no liability for inclusion and/or use of Nexperia products in such
equipment or applications and therefore such inclusion and/or use is at the
customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local Nexperia
sales office. In case of any inconsistency or conflict with the short data sheet,
the full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — Nexperia products are sold subject to the
general terms and conditions of commercial sale, as published at http://
www.nexperia.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by Nexperia. In case of any
inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, Nexperia does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness of such information
and shall have no liability for the consequences of use of such information.
Right to make changes — Nexperia reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Suitability for use — Nexperia products are not designed, authorized or
warranted to be suitable for use in medical, military, aircraft, space or life
support equipment, nor in applications where failure or
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
2PD2150
© Nexperia B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 2 January 2007
12 of 13
2PD2150
Nexperia
20 V, 3 A NPN low VCEsat (BISS) transistor
13. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packing information. . . . . . . . . . . . . . . . . . . . . . 9
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
3
4
5
6
7
8
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
12.1
12.2
12.3
12.4
13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Nexperia B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to:
salesaddresses@nexperia.com
Date of release: 2 January 2007
Document identifier: 2PD2150
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